Renesas RJK2017DPP-90#T2F

Overview

RJK2017DPP-90#T2F from Renesas is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drive half-bridges, featuring 200 V V_DSS, 45 A continuous drain current (I_D), 0.036 Ω typical R_DS(on) at V_GS = 10 V, and TO-220FN package with isolated heatsink tab.

For engineers reviewing the RJK2017DPP-90#T2F datasheet, RJK2017DPP-90#T2F pinout, RJK2017DPP-90#T2F application, or RJK2017DPP-90#T2F equivalent, key selection criteria include avalanche energy rating (9.6 mJ), body-diode reverse recovery time (150 ns), gate charge profile (Q_g = 66 nC), and thermal impedance (θ_ch-c = 4.17 °C/W).

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for low conduction loss and fast switching transients. Its gate threshold voltage range (2–4 V) enables reliable enhancement-mode operation with standard 10 V gate drive, while the integrated body diode supports freewheeling in inductive loads without external components.

The device's 4.17 °C/W channel-to-case thermal resistance and 150 °C maximum channel temperature support sustained 30 W channel dissipation at T_c = 25 °C. Its 90 pF Crss and 4800 pF Ciss values define Miller effect behavior and gate driver sizing requirements for hard-switched topologies.

Key Specifications

Pinout & Package

Package: TO-220FN (RENESAS code PRSS0003AB-A), thermally enhanced variant with electrically isolated metal tab for direct heatsink mounting and improved thermal reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXFH40N20X3 and STP45NF20, the RJK2017DPP-90#T2F offers superior thermal performance (4.17 °C/W vs. ~0.5 °C/W higher for alternatives) and guaranteed avalanche ruggedness-critical for motor drives and UPS inverters where load transients cannot be fully predicted or clamped.

Availability

RJK2017DPP-90#T2F is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC power supplies, and uninterruptible power supply (UPS) inverters requiring stable component supply and long-term production continuity.

Supply support for RJK2017DPP-90#T2F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK2017DPP-90#T2F belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding high avalanche energy, low thermal resistance, and reliable gate drive compatibility.

FAQ

What is the maximum continuous drain current rating for RJK2017DPP-90#T2F?

The RJK2017DPP-90#T2F is rated for 45 A continuous drain current (I_D) at case temperature T_c = 25 °C. This rating is limited by the device's safe operating area-not just thermal limits-and derates linearly above 25 °C per the published thermal resistance curve. At T_c = 100 °C, the practical I_D drops to approximately 22 A. Always verify layout thermal performance using the 4.17 °C/W θ_ch-c value in system-level simulations.

Does RJK2017DPP-90#T2F have an avalanche energy rating, and how is it specified?

Yes, the RJK2017DPP-90#T2F has a single-pulse avalanche energy rating of 9.6 mJ under test conditions of T_ch = 25 °C and channel temperature ≤ 150 °C. This value is measured per JEDEC JESD24-11 and reflects the device's ability to absorb inductive energy without failure during unclamped inductive switching events. The RJK2017DPP-90#T2F datasheet explicitly lists E_AR = 9.6 mJ and I_AP = 12 A, confirming its suitability for motor drive and relay-driving applications where voltage spikes occur.

What is the gate threshold voltage range for RJK2017DPP-90#T2F, and why does it matter?

The RJK2017DPP-90#T2F has a gate threshold voltage (V_GS(off)) range of 2–4 V at I_D = 1 mA and V_DS = 10 V. This defines the minimum gate voltage required to begin channel conduction. A well-bounded threshold ensures consistent turn-on behavior across temperature and process variation, and confirms compatibility with standard 10 V gate drivers. It also indicates strong noise immunity-signals below 2 V will not inadvertently activate the RJK2017DPP-90#T2F, reducing risk of shoot-through in bridge configurations.

Can RJK2017DPP-90#T2F be used in synchronous rectification topologies?

The RJK2017DPP-90#T2F is not optimized for synchronous rectification due to its relatively high body-diode reverse recovery time (t_rr = 150 ns) and forward voltage (V_DF = 0.88 V typ). While it can function as a low-side switch in buck converters, dedicated synchronous rectifier MOSFETs offer faster t_rr (<50 ns) and lower V_F. For best efficiency, use the RJK2017DPP-90#T2F as the primary switching FET and pair it with a Schottky or optimized SR FET for the freewheeling path.

What is the thermal resistance from channel to case (θ_ch-c) for RJK2017DPP-90#T2F, and how should it be applied in thermal design?

The RJK2017DPP-90#T2F has a channel-to-case thermal resistance (θ_ch-c) of 4.17 °C/W, measured under JEDEC JESD51-14 conditions. This value applies only when the device is mounted to a flat, bare copper heatsink with proper torque (0.5–0.7 N·m) on the mounting screw. To calculate junction temperature, add heatsink-to-ambient resistance (θ_sa) and interface resistance (e.g., thermal pad): T_j = T_a + P_diss × (θ_ch-c + θ_cs + θ_sa). For the RJK2017DPP-90#T2F, maintaining T_j ≤ 150 °C requires careful heatsink sizing-especially at >20 W dissipation.