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Renesas RJK2017DPP-B1#T2F

Part No.:
RJK2017DPP-B1#T2F
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixRJK2017DPP-B1#T2F.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:8,000

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Product details

Overview

RJK2017DPP-B1#T2F from Renesas is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drive half-bridges. It features 200 V VDSS, 45 A continuous drain current (ID), 0.036 Ω typical RDS(on) at VGS = 10 V, and TO-220FN package with isolated heatsink tab - enabling efficient thermal management in industrial power supplies.

For engineers reviewing the RJK2017DPP-B1#T2F datasheet, RJK2017DPP-B1#T2F pinout, RJK2017DPP-B1#T2F application, or RJK2017DPP-B1#T2F equivalent, key selection criteria include avalanche energy rating (9.6 mJ), gate charge (66 nC), body diode reverse recovery time (150 ns), and thermal impedance (4.17 °C/W) for hard-switching and synchronous rectification use cases.

Technical Context

This MOSFET employs planar vertical DMOS structure optimized for low conduction loss and fast switching transients. Its 0.036 Ω RDS(on) minimizes I²R losses at 45 A, while 66 nC total gate charge enables efficient gate driver sizing for 100–500 kHz operation.

The integrated body diode exhibits 0.88 V forward voltage at 45 A and 150 ns reverse recovery time under di/dt = 100 A/μs - supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS200 V - supports 160 V bus designs with 25% safety margin against transients
ID (continuous)45 A - delivers up to 30 W channel dissipation at Tc = 25°C
RDS(on) (typ)0.036 Ω - reduces conduction loss to ≤36.5 W at 45 A, enabling compact heatsinking
Qg66 nC - determines gate driver peak current requirement (~6.6 A @ 10 ns rise)
tr/tf40 ns / 40 ns - enables <500 kHz hard-switching with controlled EMI generation
EAR9.6 mJ - withstands single-pulse inductive turn-off events up to 12 A × 200 V
θch-c4.17 °C/W - allows 150°C channel temperature with 125°C case temperature rise

Pinout & Package

Package: TO-220FN (RENESAS code PRSS0003AB-A), thermally enhanced variant with electrically isolated metal tab for direct heatsink mounting and improved thermal reliability.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives 10 V logic-level drive to fully enhance channel; ±30 V absolute max rating prevents ESD damage
2 (Drain)High-side power terminalConnected to positive rail or inductive load; rated for 200 V blocking and 135 A pulsed current
3 (Source)Reference node / return pathServes as common reference for gate drive and current sensing; tied to power ground in low-side switch configuration

Key Features

FeatureDesign Value
Low RDS(on)0.036 Ω typ at VGS = 10 V enables ≥95% efficiency in 48 V/20 A DC-DC stages
Fast switching50 ns td(on), 95 ns td(off) support high-frequency PWM control with minimal dead-time penalty
Robust body diode150 ns trr and 45 A IDR rating allow reliable freewheeling in motor H-bridge and SMPS output stages
Avalanche-rated9.6 mJ single-pulse energy rating permits safe operation under inductive load switching without snubber

Applications

Industrial Motor DriveServer PSU Half-Bridge

Use Scenario: 24–48 V brushed DC motor control in CNC feed axes and automated valves.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutating 30 A peak load current at 20 kHz PWM.

Use Value: 0.036 Ω RDS(on) limits conduction loss to 32.4 W, reducing heatsink volume by 40% vs. 0.06 Ω alternatives.

Use Scenario: High-efficiency 80 PLUS Titanium server power supply primary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode in LLC resonant converter output stage.

Use Value: Body diode trr = 150 ns and VDF = 0.88 V enable >0.5% full-load efficiency gain over 45 V Schottky alternatives.

Uninterruptible Power SupplyEV Onboard Charger

Use Scenario: Bidirectional DC-DC stage in 48 V UPS battery backup systems with regenerative braking capability.

IC Role / Device Role / Timing Role: High-side switch in active clamp flyback topology, handling 200 V input transients and 45 A charge/discharge cycles.

Use Value: 200 V VDSS and 9.6 mJ avalanche energy ensure robustness during grid fault-induced voltage spikes.

Use Scenario: Isolated DC-DC converter in 3.3 kW OBC for Level 2 AC charging of EVs.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 66 nC Qg and 4.17 °C/W θch-c support 97.2% peak efficiency with air-cooled magnetics and PCB heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXFH40N20X3200 V, 40 A, RDS(on) = 0.042 Ω, Qg = 52 nC, TO-247 packageHigher RDS(on) but lower gate charge; requires larger footprint and different mounting hardwarePreferred where gate drive strength is limited and board space allows TO-247 layout
STP45NF20200 V, 45 A, RDS(on) = 0.044 Ω, Qg = 72 nC, TO-220FP package (non-isolated tab)Same outline but non-isolated tab demands insulating washer; slightly higher conduction lossAcceptable where heatsink isolation is handled externally and cost sensitivity outweighs thermal margin

Compared with IXFH40N20X3 and STP45NF20, the RJK2017DPP-B1#T2F offers the lowest RDS(on) in TO-220FN form factor, combined with electrically isolated tab and superior avalanche ruggedness - making it optimal for space-constrained, thermally demanding industrial power stages requiring no insulator hardware.

Availability

RJK2017DPP-B1#T2F is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for RJK2017DPP-B1#T2F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, infrastructure, and IoT applications.

The RJK2017DPP-B1#T2F belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for RJK2017DPP-B1#T2F?

The RJK2017DPP-B1#T2F is rated for 45 A continuous drain current (ID) at Tc = 25°C. This rating assumes proper heatsinking per its 4.17 °C/W channel-to-case thermal impedance. At elevated case temperatures, derating applies - e.g., ~32 A at Tc = 80°C - as defined in the Safe Operating Area (SOA) curve of the RJK2017DPP-B1#T2F datasheet.

Does RJK2017DPP-B1#T2F have an isolated heatsink tab?

Yes, the RJK2017DPP-B1#T2F uses the TO-220FN package (RENESAS code PRSS0003AB-A), which features an electrically isolated metal tab. This eliminates the need for insulating washers when mounting directly to grounded heatsinks - simplifying thermal design and improving long-term reliability in industrial power modules.

What is the typical gate threshold voltage range for RJK2017DPP-B1#T2F?

The RJK2017DPP-B1#T2F has a gate-to-source cutoff voltage (VGS(off)) range of 2.0 V to 4.0 V at VDS = 10 V and ID = 1 mA. This ensures reliable enhancement with standard 10 V gate drive while maintaining low leakage (<1 μA) at VGS = 0 V - critical for zero-power standby modes in RJK2017DPP-B1#T2F-based power sequencers.

Can RJK2017DPP-B1#T2F be used in avalanche mode?

Yes, the RJK2017DPP-B1#T2F is fully rated for single-pulse avalanche operation with 9.6 mJ energy (EAR) at Tch ≤ 150°C. This capability enables robustness in inductive switching applications like motor drives and relay drivers without external clamping circuits - a verified characteristic documented in the RJK2017DPP-B1#T2F Absolute Maximum Ratings table.

What is the body diode forward voltage of RJK2017DPP-B1#T2F at rated current?

The body-drain diode forward voltage (VDF) of the RJK2017DPP-B1#T2F is 0.88 V typical at IF = 45 A and VGS = 0 V. This low VDF - combined with 150 ns reverse recovery time - makes the RJK2017DPP-B1#T2F suitable for synchronous rectification and freewheeling paths where Schottky replacement is desired.

RJK2017DPP-B1#T2F Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RJK2017DPP-B1#T2F FAQ

1.How can I place an order for RJK2017DPP-B1#T2F through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK2017DPP-B1#T2F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK2017DPP-B1#T2F reliable?

The price and inventory of RJK2017DPP-B1#T2F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK2017DPP-B1#T2F is usually 5 days.

3.What payment methods are accepted for RJK2017DPP-B1#T2F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK2017DPP-B1#T2F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK2017DPP-B1#T2F?

RJK2017DPP-B1#T2F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK2017DPP-B1#T2F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK2017DPP-B1#T2F?

For technical support, including RJK2017DPP-B1#T2F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK2017DPP-B1#T2F requirements.

6.How does Aetrix verify that RJK2017DPP-B1#T2F is sourced from the original manufacturer or authorized distributors?

All RJK2017DPP-B1#T2F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK2017DPP-B1#T2F meets industry standards.

7.What is the process for return or replacement of RJK2017DPP-B1#T2F?

All RJK2017DPP-B1#T2F units undergo pre-shipment inspection (PSI). If there is an issue with RJK2017DPP-B1#T2F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK2017DPP-B1#T2F part is unused and in its original packaging.

Return procedure for RJK2017DPP-B1#T2F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK2017DPP-B1#T2F Tags

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