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Renesas RJK2055DPA-00#J0

Part No.:
RJK2055DPA-00#J0
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-PowerWDFN
Datasheet:
AetrixRJK2055DPA-00#J0.pdf
Description:
MOSFET N-CH 200V 20A 8WPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,730

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Product details

Overview

RJK2055DPA-00#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drivers, featuring 200 V VDSS, 20 A continuous drain current, and 0.054 Ω typical RDS(on) at VGS = 10 V - enabling efficient 48 V industrial power supplies and brushless DC motor control stages.

For engineers reviewing the RJK2055DPA-00#J0 datasheet, RJK2055DPA-00#J0 pinout, RJK2055DPA-00#J0 application, or RJK2055DPA-00#J0 equivalent, key selection criteria include avalanche energy rating (5.4 mJ), gate charge (38 nC), body-diode reverse recovery time (145 ns), and WPAK package thermal impedance (4.17 °C/W) for thermally constrained board layouts.

Technical Context

This MOSFET employs a planar vertical structure optimized for low conduction loss and fast switching transients. Its gate threshold voltage range (2.5–4.5 V) supports TTL- and CMOS-level drive compatibility, while the 2400 pF input capacitance and 55 pF reverse transfer capacitance enable predictable turn-on/turn-off timing under 10 Ω gate resistance.

The integrated body diode exhibits 0.91 V forward voltage at 20 A and 145 ns reverse recovery time under di/dt = 100 A/µs - critical for synchronous rectification and freewheeling paths in hard-switched topologies without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS200 V - supports 48 V bus designs with ≥2× voltage margin against transients
RDS(on) (typ)0.054 Ω @ VGS = 10 V - yields ≤10.8 W conduction loss at 20 A, reducing heatsink requirements
Qg38 nC - determines gate driver power demand and switching loss trade-off in 100–500 kHz operation
tr/tf50 ns / 37 ns - enables clean edge control in hard-switched SMPS with minimal EMI generation
θch-c4.17 °C/W - allows 30 W channel dissipation at ΔT = 125°C case-to-ambient gradient
trr145 ns - limits diode commutation loss and voltage overshoot during inductive turn-off
EAR5.4 mJ - provides single-pulse avalanche ruggedness for overvoltage fault handling without failure

Pinout & Package

Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad; dimensions 6.1 × 5.1 mm, 1.27 mm pitch, 0.7 mm height.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceCommon source connection for internal parallel FET cells; low-inductance return path for load current
4GateControl terminal requiring <±30 V rating; 38 nC total charge dictates driver strength requirement
5, 6, 7, 8DrainHigh-current drain terminals tied to exposed thermal pad; must be soldered to large copper area for θch-c = 4.17 °C/W

Key Features

FeatureDesign Value
Low RDS(on)0.054 Ω typ reduces I²R losses by >35% vs. comparable 200 V MOSFETs, improving efficiency in 12–48 V systems
Fast switching30 ns td(on) and 54 ns td(off) support >300 kHz PWM frequencies with minimal dead-time penalty
Avalanche-rated9 A IAP and 5.4 mJ EAR allow safe operation during inductive load interruption without snubber circuits
Optimized body diode145 ns trr and 0.91 V VDF reduce freewheeling loss and voltage spikes in half-bridge configurations

Applications

Industrial Motor DrivesServer PSU Primary Switch

Use Scenario: Brushless DC motor phase-leg switching in CNC spindles and automated conveyors operating from 48 V DC bus.

IC Role / Device Role / Timing Role: High-side/low-side power switch controlling motor winding current direction and magnitude via PWM.

Use Value: 0.054 Ω RDS(on) minimizes heat generation at 20 A peak, while 145 ns trr prevents shoot-through during complementary switching.

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server power supplies using LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch handling 200 V DC link voltage and high-frequency AC current in resonant tank circuits.

Use Value: 5.4 mJ avalanche energy absorbs leakage inductance spikes during zero-voltage switching transitions, eliminating need for clamping diodes.

Solar MicroinvertersEV Onboard Charger Stages

Use Scenario: DC-AC H-bridge switching stage in single-phase microinverters converting 30–60 V PV panel output.

IC Role / Device Role / Timing Role: Synchronous rectifier and bidirectional switch in full-bridge inverter leg with unidirectional current flow.

Use Value: 245 pF Coss and 55 pF Crss ensure stable ZVS behavior across 50–100 kHz switching, reducing switching loss by 22% vs. legacy devices.

Use Scenario: Isolation-stage switching in 6.6 kW EV onboard chargers converting AC grid to 400 V battery bus.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch in dual-active-bridge (DAB) topology managing galvanic isolation and power transfer.

Use Value: 4.17 °C/W θch-c enables direct thermal coupling to aluminum baseplate, sustaining 20 A continuous current without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXFH20N20X3Higher RDS(on) (0.075 Ω), lower Qg (29 nC), TO-247 packageRequires larger PCB footprint and higher thermal resistance mountingPreferred where gate drive power is constrained but board space permits discrete heatsinking
STP20NM20Same VDSS/ID, higher RDS(on) (0.085 Ω), D2PAK packageLower thermal performance (θjc = 3.5 °C/W) limits sustained 20 A operationSuitable for cost-sensitive designs with moderate duty cycles and ambient <60°C

Compared with IXFH20N20X3 and STP20NM20, RJK2055DPA-00#J0 delivers superior thermal efficiency in compact layouts due to its WPAK package's 4.17 °C/W θch-c and lowest RDS(on), making it optimal for high-density 48 V industrial power modules where conduction loss dominates total loss budget.

Availability

RJK2055DPA-00#J0 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard charger stages requiring stable component supply and long-term production continuity.

Supply support for RJK2055DPA-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

RJK2055DPA-00#J0 belongs to Renesas' high-voltage power MOSFET product line engineered for high-efficiency, high-reliability switching in industrial-grade power conversion systems up to 200 V.

FAQ

What is the maximum continuous drain current rating for RJK2055DPA-00#J0 at 25°C case temperature?

RJK2055DPA-00#J0 is rated for 20 A continuous drain current (ID) at Tc = 25°C per the Absolute Maximum Ratings table. Derating applies above 25°C - at 100°C case temperature, the usable current drops to approximately 12 A based on its 30 W channel dissipation limit and 4.17 °C/W thermal impedance.

Does RJK2055DPA-00#J0 include an integrated body diode, and what are its key parameters?

Yes, RJK2055DPA-00#J0 integrates a body-drain diode with 0.91 V forward voltage (VDF) at 20 A and 145 ns reverse recovery time (trr) under di/dt = 100 A/µs. These values are measured with VGS = 0 and are critical for freewheeling path design in half-bridge and synchronous rectifier applications.

What is the gate-to-source voltage range supported by RJK2055DPA-00#J0, and how does it affect drive circuit design?

RJK2055DPA-00#J0 supports ±30 V gate-to-source voltage (VGS), with a gate threshold voltage (VGS(off)) of 2.5–4.5 V. This wide VGS range allows robust drive with 10 V logic-level signals while tolerating transient overshoot; however, gate drive must deliver 38 nC total charge to achieve full enhancement within specified switching times.

Is RJK2055DPA-00#J0 avalanche-rated, and what does that mean for circuit reliability?

Yes, RJK2055DPA-00#J0 is fully avalanche-rated with 9 A single-pulse avalanche current (IAP) and 5.4 mJ avalanche energy (EAR). This means it can safely absorb inductive energy during overvoltage events - such as transformer leakage spikes or motor back-EMF - without catastrophic failure, enhancing system robustness in unclamped inductive switching applications.

What package type does RJK2055DPA-00#J0 use, and why is its thermal performance significant?

RJK2055DPA-00#J0 uses the WPAK package (RENESAS code PWSN0008DA-A), a surface-mount thermally enhanced leadframe with exposed drain pad. Its 4.17 °C/W channel-to-case thermal impedance enables 30 W power dissipation with only 125°C temperature rise - significantly outperforming standard D2PAK or TO-252 packages and allowing compact, fanless industrial power designs.

RJK2055DPA-00#J0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
30W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WPAK (3)

RJK2055DPA-00#J0 FAQ

1.How can I place an order for RJK2055DPA-00#J0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK2055DPA-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK2055DPA-00#J0 reliable?

The price and inventory of RJK2055DPA-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK2055DPA-00#J0 is usually 5 days.

3.What payment methods are accepted for RJK2055DPA-00#J0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK2055DPA-00#J0 transactions.

Note: Certain payment methods may incur a processing fee.

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RJK2055DPA-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK2055DPA-00#J0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK2055DPA-00#J0?

For technical support, including RJK2055DPA-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK2055DPA-00#J0 requirements.

6.How does Aetrix verify that RJK2055DPA-00#J0 is sourced from the original manufacturer or authorized distributors?

All RJK2055DPA-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK2055DPA-00#J0 meets industry standards.

7.What is the process for return or replacement of RJK2055DPA-00#J0?

All RJK2055DPA-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK2055DPA-00#J0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK2055DPA-00#J0 part is unused and in its original packaging.

Return procedure for RJK2055DPA-00#J0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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