My Inquiry
My Account
Renesas RJK4007DPP-00#T2
- Part No.:
- RJK4007DPP-00#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK4007DPP-00#T2.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:393
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJK4007DPP-00#T2 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and AC/DC SMPS. It delivers 400 V VDSS, 7.6 A continuous drain current, and 0.47 Ω typical RDS(on) at VGS = 10 V, enabling efficient high-voltage power control in industrial and consumer power supplies.
For engineers reviewing the RJK4007DPP-00#T2 datasheet, RJK4007DPP-00#T2 pinout, RJK4007DPP-00#T2 application, or RJK4007DPP-00#T2 equivalent, key selection criteria include avalanche energy rating (26.1 mJ), gate charge (24.5 nC), body-diode reverse recovery time (230 ns), and TO-220FN package thermal performance (θch-c = 3.9 °C/W).
Technical Context
This MOSFET employs a planar vertical structure optimized for ruggedness and fast switching. Its 400 V breakdown voltage supports universal-input offline applications, while low output capacitance (Coss = 140 pF) and reverse transfer capacitance (Crss = 20 pF) reduce switching losses in hard-switched topologies.
The device features a built-in body diode with 14 A peak reverse recovery current and 230 ns trr under standardized test conditions (diF/dt = 100 A/µs). Gate threshold voltage (VGS(off) = 3.0–4.0 V) ensures stable turn-on behavior with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 400 V - Supports 380 VAC rectified input with margin for surge and ringing in offline SMPS. |
| RDS(on) (typ) | 0.47 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 7 A, reducing heatsink requirements. |
| Qg | 24.5 nC - Determines gate drive power and switching speed in 100–500 kHz converters. |
| tr/tf | 30 ns / 35 ns - Supports high-frequency operation with controlled EMI in compact power stages. |
| EAR | 26.1 mJ - Withstands single-pulse inductive energy without failure in motor or relay drive circuits. |
| θch-c | 3.9 °C/W - Enables 32 W channel dissipation at Tc = 25 °C, critical for thermally constrained designs. |
| trr | 230 ns - Limits body-diode conduction loss and shoot-through risk in synchronous rectification. |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), surface-mount compatible with isolated tab, 3.9 °C/W thermal resistance, 2.0 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level signal to fully enhance channel; requires ≤25 Ω series resistance to damp ringing. |
| 2 (Drain) | High-side power node | Connected to primary-side high-voltage rail (e.g., 400 V bus); electrically tied to metal tab for thermal path. |
| 3 (Source) | Power return reference | Serves as local ground for gate driver; must be low-inductance path to minimize switching noise coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.47 Ω typ at 10 V gate drive reduces I²R loss by >30% vs. comparable 400 V MOSFETs in 7 A applications. |
| High avalanche capability | 14 A IAP and 26.1 mJ EAR allow reliable operation in inductive load switching without external snubbers. |
| Fast body diode | 230 ns trr enables use in quasi-resonant and LLC topologies where body-diode conduction occurs during dead-time. |
| Low gate charge | 24.5 nC Qg permits efficient driving with low-power gate drivers (e.g., TC4420) at 300 kHz+ frequencies. |
| TO-220FN isolation | Insulated tab eliminates need for mounting insulator, simplifying thermal design and reducing BOM cost in PCB-mounted power stages. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
Use Scenario: Half-bridge switching in 200–500 W brushless DC motor controllers for HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side power switch controlling 400 V DC bus to motor phase windings with 30 ns rise/fall times. Use Value: 0.47 Ω RDS(on) minimizes conduction loss at 7 A RMS, while 26.1 mJ avalanche rating absorbs inductive kickback during commutation. |
Use Scenario: Primary-side switching transistor in 80 PLUS Titanium-certified 1 kW server power supply. IC Role / Device Role / Timing Role: Hard-switched PWM transistor operating at 250 kHz with 10 V gate drive and 320 V VDD. Use Value: 24.5 nC Qg and 20 pF Crss reduce switching loss and EMI generation, supporting high efficiency at full load. |
| AC/DC Adapter Output Rectification | UPS Inverter Stage |
Use Scenario: Synchronous rectifier replacement for Schottky diodes in 65 W laptop adapters with universal AC input. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal, leveraging body diode for zero-voltage turn-on. Use Value: 230 ns trr and 0.9 V VDF reduce forward and reverse recovery losses, improving efficiency by 1.2% over 100 V Schottky solutions. |
Use Scenario: Full-bridge inverter switch in 3 kVA line-interactive UPS handling 230 VAC output with battery backup. IC Role / Device Role / Timing Role: 400 V-rated switching element handling bidirectional current during battery-to-AC inversion and grid synchronization. Use Value: 7.6 A ID and 32 W Pch support 12 A peak output with forced-air cooling, while ±30 V VGSS withstands gate transients in noisy environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V VDSS, 4.3 A ID, 1.2 Ω RDS(on), TO-220FP package (non-isolated tab) | Lower current rating and higher on-resistance limit use to ≤3 A loads; non-isolated tab requires insulator. | Select when lower cost is prioritized over thermal performance and current capacity. |
| IXTP4N40P | 400 V VDSS, 4.0 A ID, 1.3 Ω RDS(on), TO-220 package (isolated tab) | Higher RDS(on) increases conduction loss; slower switching (tr = 45 ns) limits frequency range. | Choose for legacy designs requiring identical footprint but accepting 2× conduction loss at 7 A. |
Compared with STP4NK40ZFP and IXTP4N40P, the RJK4007DPP-00#T2 provides 7.6 A current capability, 0.47 Ω RDS(on), and TO-220FN isolation-enabling higher power density, lower thermal resistance, and simplified mounting in new 400 V power stage designs.
Availability
RJK4007DPP-00#T2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply and long-term manufacturability.
Supply support for RJK4007DPP-00#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, and enterprise applications.
The RJK4007DPP-00#T2 belongs to Renesas' high-voltage discrete MOSFET product line, engineered for rugged, high-efficiency power conversion in industrial-grade SMPS, motor controls, and UPS systems.
FAQ
What is the maximum continuous drain current rating for RJK4007DPP-00#T2?
The RJK4007DPP-00#T2 has a maximum continuous drain current (ID) of 7.6 A at Tc = 25 °C. This rating assumes proper heatsinking and derates linearly with increasing case temperature-dropping to approximately 4.5 A at Tc = 100 °C per the normalized thermal impedance curve in the datasheet. The RJK4007DPP-00#T2 must not exceed its 150 °C channel temperature limit under any operating condition.
Does RJK4007DPP-00#T2 have an insulated tab, and why does it matter?
Yes, the RJK4007DPP-00#T2 uses the TO-220FN package with an electrically insulated metal tab. This eliminates the need for a thermal pad insulator or silicone washer during PCB mounting, reducing assembly steps and thermal interface resistance. The insulation also prevents short circuits when the drain (connected to the tab) is at high voltage-critical in primary-side SMPS layouts where the RJK4007DPP-00#T2 drain connects directly to the 400 V bus.
What is the gate threshold voltage range for RJK4007DPP-00#T2, and how does it affect drive requirements?
The RJK4007DPP-00#T2 has a gate-to-source cutoff voltage (VGS(off)) of 3.0–4.0 V at ID = 1 mA. This means the device begins conducting significantly above ~3.5 V and achieves full enhancement near 10 V. To ensure low RDS(on) and minimal conduction loss, the RJK4007DPP-00#T2 must be driven with ≥10 V gate voltage-making it incompatible with 3.3 V or 5 V logic without level-shifting circuitry.
Can RJK4007DPP-00#T2 be used in avalanche mode, and what are the limits?
Yes, the RJK4007DPP-00#T2 is rated for single-pulse avalanche operation with IAP = 14 A and EAR = 26.1 mJ at Tch ≤ 150 °C. This allows safe energy absorption during inductive switching events-such as relay coil de-energization or motor phase commutation-without external clamping. However, repetitive avalanche is not guaranteed, and the RJK4007DPP-00#T2 must remain within its SOA limits during all transient conditions.
How does the body diode performance of RJK4007DPP-00#T2 compare to discrete Schottky diodes?
The RJK4007DPP-00#T2 body diode has a forward voltage (VDF) of 0.9–1.5 V at 14 A and reverse recovery time (trr) of 230 ns-slower and higher-VF than most Schottky diodes. However, its integrated nature eliminates layout parasitics and enables synchronous rectification control. For RJK4007DPP-00#T2 applications requiring lowest loss, external Schottky or SiC diodes remain preferable; the body diode is best suited for dead-time conduction or fault protection.
RJK4007DPP-00#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK4007DPP-00#T2 FAQ
1.How can I place an order for RJK4007DPP-00#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK4007DPP-00#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK4007DPP-00#T2 reliable?
The price and inventory of RJK4007DPP-00#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK4007DPP-00#T2 is usually 5 days.
3.What payment methods are accepted for RJK4007DPP-00#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK4007DPP-00#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK4007DPP-00#T2?
RJK4007DPP-00#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK4007DPP-00#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK4007DPP-00#T2?
For technical support, including RJK4007DPP-00#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK4007DPP-00#T2 requirements.
6.How does Aetrix verify that RJK4007DPP-00#T2 is sourced from the original manufacturer or authorized distributors?
All RJK4007DPP-00#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK4007DPP-00#T2 meets industry standards.
7.What is the process for return or replacement of RJK4007DPP-00#T2?
All RJK4007DPP-00#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK4007DPP-00#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK4007DPP-00#T2 part is unused and in its original packaging.
Return procedure for RJK4007DPP-00#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK4007DPP-00#T2 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
