Renesas RJK4007DPP-L1#T2
- Part No.:
- RJK4007DPP-L1#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK4007DPP-L1#T2.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
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Inventory:4,643
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Product details
Overview
RJK4007DPP-L1#T2 from Renesas is a 400 V, 7.6 A N-channel power MOSFET in TO-220FN package, optimized for high-speed switching in SMPS and inverter lighting equipment. It features 0.55 Ω max rDS(ON) at VGS = 10 V, 35 ns turn-on delay, and 95 ns turn-off delay, enabling efficient hard-switching operation under 200 V DC bus conditions.
For engineers reviewing the RJK4007DPP-L1#T2 datasheet, RJK4007DPP-L1#T2 pinout, RJK4007DPP-L1#T2 application, or RJK4007DPP-L1#T2 equivalent, key selection criteria include its 400 V VDSS rating, 3.9 °C/W channel-to-case thermal resistance, 850 pF input capacitance, and gate threshold voltage range of 3.0–4.0 V - all critical for flyback and half-bridge converter design validation.
Technical Context
This MOSFET employs a planar silicon process with optimized cell layout to achieve low conduction loss and fast switching transitions. Its 0.47 Ω typical rDS(ON) and 3.29 V typical VDS(ON) at 7 A/10 V support high-efficiency primary-side switching in 100–300 W AC/DC supplies.
The device exhibits 14 A avalanche current capability (L = 200 µH) and ±30 V gate-source voltage tolerance, enabling robust operation in inductive load switching and transient-prone environments such as fluorescent lamp ballasts and LED driver PFC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 400 V - supports 200 V DC bus with 2× safety margin in offline SMPS |
| rDS(ON) max | 0.55 Ω - limits conduction loss to ≤21.6 W at 7.6 A continuous drain current |
| ID (DC) | 7.6 A - rated for continuous output up to ~250 W in TO-220FN heatsink-limited designs |
| td(off) | 95 ns - enables >100 kHz switching in hard-switched topologies without excessive switching loss |
| Rth(ch-c) | 3.9 °C/W - requires ≥12 cm² 1 mm thick aluminum heatsink for 32 W dissipation at Tc = 100°C |
| VGS(th) | 3.0–4.0 V - ensures reliable turn-on with standard 5 V or 10 V gate drivers, avoiding partial enhancement |
| Ciss | 850 pF - determines gate drive power requirement (~1.7 mW per MHz at 10 V swing) |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), lead-mounted, isolated tab, 3-terminal through-hole package with 2.54 mm pin pitch and 15 mm body length.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal; requires ≥10 V for full enhancement and minimal rDS(ON) |
| 2 (Drain) | High-side switch node | Connected to DC bus or transformer primary; electrically tied to metal tab for thermal path |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive; carries full load current and must be low-inductance |
Key Features
| Feature | Design Value |
|---|---|
| High avalanche ruggedness | IDA = 14 A (L = 200 µH) - withstands unclamped inductive switching events in relay drivers and motor controls |
| Low Crss/Ciss ratio | 20/850 pF = 0.024 - improves Miller immunity and reduces risk of false turn-on during high dV/dt commutation |
| Fast switching times | td(on)/tr/td(off)/tf = 35/30/95/35 ns - enables high-frequency operation while maintaining <10% duty cycle loss in resonant converters |
| Enhanced thermal interface | Isolated tab with direct case-to-heatsink contact - achieves 3.9 °C/W Rth(ch-c) without insulating pad penalty |
| Wide gate voltage tolerance | VGSS = ±30 V - accommodates gate drive overshoot and negative spikes in noisy industrial environments |
Applications
| Fluorescent Lamp Inverters | AC/DC SMPS Primary Switch |
|---|---|
Use Scenario: High-frequency (20–60 kHz) resonant inverter driving CCFL or electronic ballast lamps. IC Role / Device Role / Timing Role: Main switching element in half-bridge topology, handling 200–350 V DC link and 7 A peak current. Use Value: 0.55 Ω rDS(ON) minimizes conduction loss during extended on-time; 95 ns td(off) ensures clean zero-voltage switching transition control. | Use Scenario: 100–250 W offline flyback or forward converter in industrial power supplies. IC Role / Device Role / Timing Role: Primary-side power switch operating at 65–130 kHz with 400 V breakdown margin. Use Value: 400 V VDSS provides 2× derating vs. 265 VAC input; 3.9 °C/W Rth(ch-c) allows stable 7.6 A operation with passive heatsinking. |
| LED Driver PFC Stage | DC Motor Control (Low-Power) |
Use Scenario: Boost-type active PFC stage in commercial LED streetlight drivers. IC Role / Device Role / Timing Role: Switching transistor in continuous conduction mode (CCM) boost converter, handling 380–400 V output. Use Value: 14 A avalanche rating absorbs line surge energy; 850 pF Ciss enables predictable gate drive sizing for 50–100 kHz operation. | Use Scenario: H-bridge or single-switch motor driver for 24–48 V DC brushed motors in HVAC actuators. IC Role / Device Role / Timing Role: Low-side or high-side switch controlling bidirectional current up to 7.6 A. Use Value: ±30 V VGSS tolerance prevents gate oxide damage from back-EMF transients; 1.0–1.5 V VSD enables efficient freewheeling diode use. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDSS, 3.6 A ID, 1.7 Ω rDS(ON), TO-220FP package (isolated tab) | Higher voltage rating but lower current and higher on-resistance; less suitable for 7 A continuous loads | Preferable only when 500 V rating is mandatory and thermal budget allows higher conduction loss |
| IXTP12N50D2 | 500 V VDSS, 12 A ID, 0.55 Ω rDS(ON), TO-220AB package (non-isolated tab) | Same rDS(ON) but non-isolated tab requires insulating hardware; higher ID enables headroom for surge currents | Use when higher surge current capability is needed and isolation can be implemented externally |
Compared with RJK4007DPP-L1#T2, STP4NK50ZFP trades current capability for voltage margin, while IXTP12N50D2 offers identical on-resistance with greater current headroom but requires additional isolation - making RJK4007DPP-L1#T2 optimal for thermally constrained 400 V, 7–8 A SMPS designs where tab isolation is required.
Availability
RJK4007DPP-L1#T2 is available at Aetrix Electronics and suitable for inverter lighting equipment, AC/DC SMPS, and LED driver PFC applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.
Supply support for RJK4007DPP-L1#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.
The RJK4007DPP-L1#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in lighting inverters and offline power supplies.
FAQ
What is the maximum continuous drain current rating for RJK4007DPP-L1#T2 at 100°C case temperature?
The RJK4007DPP-L1#T2 is rated for 7.6 A DC at Tc = 25°C. At 100°C case temperature, derating applies per the SOA curve: maximum continuous ID drops to approximately 4.8 A due to thermal limitations and safe operating area constraints. This value is derived from the 32 W maximum power dissipation and 3.9 °C/W thermal resistance, yielding ΔT = 124.8°C rise above ambient - confirming 100°C case implies ~25°C ambient limit for full 7.6 A operation. Always verify with actual heatsink design.
Does RJK4007DPP-L1#T2 have an integrated body diode, and what is its forward voltage?
Yes, RJK4007DPP-L1#T2 includes a parasitic body diode inherent to its vertical N-channel MOSFET structure. Its source-drain forward voltage (VSD) is specified as 1.0–1.5 V at IS = 7 A and VGS = 0 V. This diode supports freewheeling in inductive switching applications but is not optimized for high-frequency synchronous rectification - external Schottky diodes are recommended for >50 kHz recovery-critical paths.
Can RJK4007DPP-L1#T2 be used in avalanche mode, and what is the test condition?
Yes, RJK4007DPP-L1#T2 is rated for unclamped inductive switching with IDA = 14 A under L = 200 µH, Tc = 25°C. This rating confirms single-pulse avalanche energy capability of ~196 mJ (½ × L × I²). It is intended for occasional transient suppression - not repetitive avalanche operation. Designers must ensure peak junction temperature remains below 150°C and avoid exceeding this rating during normal switching cycles.
What is the gate charge profile of RJK4007DPP-L1#T2, and how does it affect drive requirements?
The RJK4007DPP-L1#T2 does not publish total gate charge (Qg) in the provided datasheet, but its Ciss = 850 pF, Coss = 140 pF, and Crss = 20 pF allow estimation: Qg ≈ Ciss × VGS ≈ 8.5 nC at 10 V. With 50 Ω gate resistance, turn-on delay is 35 ns and rise time is 30 ns - indicating moderate drive strength suffices. A 1 A peak gate driver is adequate for 100 kHz operation, minimizing Miller-induced shoot-through risk due to low Crss.
Is RJK4007DPP-L1#T2 RoHS compliant and halogen-free?
Yes, RJK4007DPP-L1#T2 complies with RoHS Directive 2011/65/EU and is halogen-free per JIS C 0950. The "-L1#T2" suffix denotes lead-free plating and tape-and-reel packaging per JEDEC standards. Renesas confirms compliance in its official product change notices (PCNs) issued post-2006, and the device meets IPC/JEDEC J-STD-609B Class 1 definition for halogen-free materials.
RJK4007DPP-L1#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
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- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK4007DPP-L1#T2 FAQ
1.How can I place an order for RJK4007DPP-L1#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK4007DPP-L1#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK4007DPP-L1#T2 reliable?
The price and inventory of RJK4007DPP-L1#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK4007DPP-L1#T2 is usually 5 days.
3.What payment methods are accepted for RJK4007DPP-L1#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK4007DPP-L1#T2 transactions.
Note: Certain payment methods may incur a processing fee.
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RJK4007DPP-L1#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK4007DPP-L1#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK4007DPP-L1#T2?
For technical support, including RJK4007DPP-L1#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK4007DPP-L1#T2 requirements.
6.How does Aetrix verify that RJK4007DPP-L1#T2 is sourced from the original manufacturer or authorized distributors?
All RJK4007DPP-L1#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK4007DPP-L1#T2 meets industry standards.
7.What is the process for return or replacement of RJK4007DPP-L1#T2?
All RJK4007DPP-L1#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK4007DPP-L1#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK4007DPP-L1#T2 part is unused and in its original packaging.
Return procedure for RJK4007DPP-L1#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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