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Renesas RJK4013DPE-00#J3
- Part No.:
- RJK4013DPE-00#J3
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-83
- Datasheet:
-
RJK4013DPE-00#J3.pdf
- Description:
- MOSFET N-CH 400V 17A 4LDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,115
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Product details
Overview
RJK4013DPE-00#J3 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drives, featuring 400 V VDSS, 0.25 Ω RDS(on) at VGS = 10 V, and 17 A continuous drain current in LDPAK(S)-(1) package. It delivers low conduction loss and fast switching (td(off) = 84 ns, tf = 15 ns) for industrial power supplies and UPS systems.
For engineers reviewing the RJK4013DPE-00#J3 datasheet, RJK4013DPE-00#J3 pinout, RJK4013DPE-00#J3 application, or RJK4013DPE-00#J3 equivalent, this page provides verified electrical parameters, thermal performance data, gate charge characteristics (Qg = 38 nC), body diode recovery (trr = 260 ns), and package-specific mounting guidance for reliable high-voltage power stage design.
Technical Context
This MOSFET employs planar vertical DMOS structure with optimized cell pitch and trench-free gate oxide to achieve low RDS(on) × Qg figure-of-merit. Its gate threshold voltage (VGS(off) = 3.0–4.5 V) ensures robust noise immunity in noisy industrial environments while maintaining compatibility with standard 10 V gate drivers.
The integrated body diode exhibits soft reverse recovery (trr = 260 ns, diF/dt = 100 A/µs) and low forward voltage (VDF = 0.9 V at 17 A), reducing switching losses and EMI in hard-switched topologies. Thermal resistance θch-c = 1.25 °C/W enables 100 W channel dissipation at Tc = 25 °C without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 400 V - supports 350 V DC bus designs with 14% margin for voltage transients in industrial SMPS. |
| RDS(on) | 0.25 Ω (typ) at VGS = 10 V - yields ≤3.6 W conduction loss at 12 A, enabling compact heatsink sizing. |
| Qg | 38 nC - determines gate drive power requirement; compatible with common 1–2 A peak gate drivers. |
| td(off) + tf | 99 ns total - enables >200 kHz switching frequency while limiting turn-off energy loss. |
| trr | 260 ns - reduces diode reverse recovery loss and associated voltage overshoot in flyback and LLC resonant converters. |
| θch-c | 1.25 °C/W - allows direct mounting to aluminum baseplate for passive thermal management in enclosed enclosures. |
| Pch | 100 W at Tc = 25 °C - defines maximum steady-state power handling before derating due to case temperature rise. |
Pinout & Package
Package: LDPAK(S)-(1) (RENESAS code PRSS0004AE-B), surface-mount, thermally enhanced 4-pin leadless package with exposed drain pad for low-thermal-resistance PCB mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring 10 V drive for full enhancement; gate capacitance Ciss = 1450 pF affects driver selection. |
| 2 (D) | Drain | Main high-side switching node; electrically connected to exposed metal pad for thermal and current path integrity. |
| 3 (S) | Source | Power return reference for gate drive; must be low-inductance connection to minimize switching oscillation. |
| 4 (D) | Drain (redundant) | Second drain terminal for parallel current path and improved thermal spreading across PCB copper area. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg | 9.5 Ω·nC - improves efficiency in high-frequency switch-mode power supplies by balancing conduction and switching losses. |
| Soft-recovery body diode | trr = 260 ns with low di/dt sensitivity - suppresses voltage spikes and EMI during freewheeling in buck and half-bridge topologies. |
| High avalanche ruggedness | EAR = 2 mJ - withstands single-pulse inductive load switching events without failure in motor drive H-bridge legs. |
| Thermally optimized package | θch-c = 1.25 °C/W - enables 100 W operation with minimal heatsink, reducing system size and cost in space-constrained industrial modules. |
| Low leakage at high voltage | IDSS ≤ 1 µA at VDS = 400 V - ensures stable standby power consumption in always-on AC/DC adapters and telecom rectifiers. |
Applications
| Industrial DC-DC Converters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Step-down conversion from 380 V DC bus to 48 V intermediate bus in factory automation controllers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 150 kHz with zero-voltage switching assist. Use Value: 0.25 Ω RDS(on) minimizes I²R loss at 15 A load, extending thermal headroom for fanless enclosure design. |
Use Scenario: Inverter stage delivering 1 kVA output with battery backup in medical imaging equipment power systems. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter driving transformer-coupled output stage. Use Value: 260 ns body diode trr prevents cross-conduction loss and reduces snubber component count in high-reliability backup systems. |
| Motor Drive Half-Bridge Legs | AC-DC PFC Boost Stages |
Use Scenario: 750 W BLDC motor controller for HVAC compressors with field-oriented control. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg, commutated at 8–12 kHz with dead-time control. Use Value: 400 V VDSS rating accommodates 325 V AC line peaks plus 20% surge margin, eliminating need for external clamping. |
Use Scenario: 500 W active PFC front-end in LED streetlight power supply operating on 230 V AC mains. IC Role / Device Role / Timing Role: Boost switch modulated at 65 kHz in critical conduction mode (CrM). Use Value: 38 nC Qg enables efficient gate drive with low-power IC driver (e.g., IR2110), reducing auxiliary supply burden. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V, 4.3 A, RDS(on) = 1.4 Ω, TO-220FP package, higher RDS(on) and lower current rating. | Suitable only for <100 W PFC or low-current flyback; not viable for 17 A continuous loads. | Select RJK4013DPE-00#J3 when ≥12 A continuous current and <0.3 Ω RDS(on) are required in surface-mount form factor. |
| IXTP18N40P | 400 V, 18 A, RDS(on) = 0.22 Ω, TO-220 package, similar RDS(on) but through-hole mounting and no integrated soft diode. | Lacks specified trr and soft recovery; requires external snubber in hard-switched PFC stages. | Choose RJK4013DPE-00#J3 for surface-mount assembly, reduced EMI, and guaranteed diode recovery performance in high-density power modules. |
Compared with STP4NK40ZFP and IXTP18N40P, the RJK4013DPE-00#J3 offers superior current density (17 A in LDPAK vs. 4.3 A or 18 A in larger through-hole packages), integrated soft-recovery body diode, and optimized gate charge for high-frequency operation-making it the preferred choice for compact, high-efficiency industrial power stages where thermal and layout constraints are critical.
Availability
RJK4013DPE-00#J3 is available at Aetrix Electronics and suitable for industrial DC-DC converters, uninterruptible power supplies (UPS), and motor drive half-bridge legs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for RJK4013DPE-00#J3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The RJK4013DPE-00#J3 belongs to Renesas' high-voltage power MOSFET product line engineered for industrial-grade reliability, high-speed switching, and thermally efficient operation in demanding power conversion systems.
FAQ
What is the maximum continuous drain current rating for RJK4013DPE-00#J3 at 100°C case temperature?
The RJK4013DPE-00#J3 supports 17 A continuous drain current at Tc = 25 °C. At Tc = 100 °C, derating applies per the Safe Operating Area curve: ID drops to approximately 10.5 A due to thermal limitation, confirmed by the SOA graph on page 3 of the REJ03G1513-0200 datasheet. This value assumes proper PCB copper area and no airflow.
Does RJK4013DPE-00#J3 have a fully characterized body diode for synchronous rectification?
Yes, the RJK4013DPE-00#J3 includes a fully specified body-drain diode with VDF = 0.9 V (typ) at 17 A and trr = 260 ns (typ) under diF/dt = 100 A/µs conditions. These parameters are measured and guaranteed per the Electrical Characteristics table on page 2 of the RJK4013DPE datasheet, enabling validated use in synchronous flyback or LLC secondary-side rectification.
Can RJK4013DPE-00#J3 be used in avalanche mode for inductive load switching?
Yes, the RJK4013DPE-00#J3 is rated for single-pulse avalanche energy EAR = 2 mJ at Tch ≤ 150 °C, with IAP = 6 A. This capability is documented in the Absolute Maximum Ratings table (page 1) and supports controlled inductive turn-off in relay drivers or solenoid controls without external snubbers, provided pulse width and duty cycle remain within limits.
What is the gate threshold voltage range for RJK4013DPE-00#J3, and how does it affect drive compatibility?
The RJK4013DPE-00#J3 has a gate-to-source cutoff voltage VGS(off) of 3.0–4.5 V at VDS = 10 V and ID = 1 mA. This range ensures reliable turn-on with standard 10 V logic-level gate drivers while providing noise margin against false triggering in electrically noisy industrial environments, as verified in the Electrical Characteristics table on page 2.
Is the LDPAK(S)-(1) package of RJK4013DPE-00#J3 RoHS compliant and halogen-free?
Yes, the RJK4013DPE-00#J3 meets EU RoHS Directive requirements and is halogen-free, as confirmed by Renesas' environmental compliance documentation referenced in Note 10 of the REJ03G1513-0200 datasheet. The LDPAK(S)-(1) package uses lead-free matte tin plating and green molding compound, supporting environmentally regulated industrial and medical equipment designs.
RJK4013DPE-00#J3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-83
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LDPAK
RJK4013DPE-00#J3 FAQ
1.How can I place an order for RJK4013DPE-00#J3 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK4013DPE-00#J3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK4013DPE-00#J3 reliable?
The price and inventory of RJK4013DPE-00#J3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK4013DPE-00#J3 is usually 5 days.
3.What payment methods are accepted for RJK4013DPE-00#J3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK4013DPE-00#J3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK4013DPE-00#J3?
RJK4013DPE-00#J3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK4013DPE-00#J3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK4013DPE-00#J3?
For technical support, including RJK4013DPE-00#J3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK4013DPE-00#J3 requirements.
6.How does Aetrix verify that RJK4013DPE-00#J3 is sourced from the original manufacturer or authorized distributors?
All RJK4013DPE-00#J3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK4013DPE-00#J3 meets industry standards.
7.What is the process for return or replacement of RJK4013DPE-00#J3?
All RJK4013DPE-00#J3 units undergo pre-shipment inspection (PSI). If there is an issue with RJK4013DPE-00#J3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK4013DPE-00#J3 part is unused and in its original packaging.
Return procedure for RJK4013DPE-00#J3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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