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Renesas RJK4018DPK-00#T0
- Part No.:
- RJK4018DPK-00#T0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
RJK4018DPK-00#T0.pdf
- Description:
- MOSFET N-CH 400V 43A TO3P
- Quantity:
- Payment:
- Shipping:
Inventory:7,624
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Product details
Overview
RJK4018DPK-00#T0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drives. It delivers 43 A continuous drain current, 400 V drain-source breakdown voltage, and a typical on-resistance of 0.085 Ω at VGS = 10 V and ID = 21.5 A, enabling efficient high-power operation in industrial power supplies.
For engineers reviewing the RJK4018DPK-00#T0 datasheet, RJK4018DPK-00#T0 pinout, RJK4018DPK-00#T0 application, or RJK4018DPK-00#T0 equivalent, key selection criteria include its TO-3P package thermal performance (θch-c = 0.625 °C/W), fast switching times (td(on) = 50 ns, tf = 96 ns), and body-diode reverse recovery time (trr = 360 ns) in hard-switched topologies.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching behavior. Its gate charge profile (Qg = 99 nC, Qgd = 43 nC) supports stable operation under high dV/dt conditions while maintaining Miller plateau control during turn-on/turn-off transitions.
The device integrates a robust body diode with VDF = 0.93 V (typ.) at IF = 43 A and trr = 360 ns under diF/dt = 100 A/μs, making it suitable for freewheeling paths in synchronous rectification and flyback converters where diode recovery stress must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 400 V - Withstands up to 400 V drain-to-source blocking voltage before avalanche onset, suitable for 380 VAC input-derived 500 V bus designs. |
| RDS(on) | 0.085 Ω (typ.) - Enables <1.9 W conduction loss at 43 A, reducing heatsink requirements in high-current switch-mode power supplies. |
| ID | 43 A (continuous) - Supports high-output-current DC-DC stages without parallel devices in industrial 48 V systems. |
| trr | 360 ns - Limits diode reverse recovery energy and EMI generation in non-synchronous buck/flyback converters. |
| θch-c | 0.625 °C/W - Allows 200 W channel dissipation at Tc = 25 °C, supporting compact thermal design with direct-mount heatsinking. |
| Qg | 99 nC - Determines gate drive power requirement (~1 mW per MHz at 10 V drive); compatible with standard 1–2 A peak gate drivers. |
| Ciss | 4100 pF - Influences high-frequency input impedance and gate drive loop stability in >100 kHz switching applications. |
Pinout & Package
Package: TO-3P (RENESAS code PRSS0004ZE-A), metal-flanged through-hole package with isolated drain tab for direct heatsink mounting and mechanical robustness in high-vibration environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V gate-source bias and low-impedance drive to minimize switching losses. |
| 2 (Drain, Flange) | Main power output node | Electrically connected to metal flange; must be thermally and electrically bonded to heatsink; carries full load current and high dv/dt transients. |
| 3 (Source) | Reference and return path | Serves as common reference for gate drive and current sensing; connects to low-side return path; critical for noise immunity in high-di/dt circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.085 Ω typ. reduces conduction loss by >30% vs. comparable 400 V MOSFETs, directly improving efficiency in 1–5 kW power stages. |
| Fast switching | 50 ns turn-on delay + 96 ns fall time enables >200 kHz operation with minimal overlap loss, supporting high-density SMPS designs. |
| Robust body diode | 360 ns trr and 0.93 V VDF allow reliable freewheeling in non-synchronous topologies without external Schottky supplementation. |
| High avalanche rating | 14 A IAP and 11.2 mJ EAR provide single-pulse ruggedness against inductive switching surges in motor drive H-bridges. |
| Thermal performance | 0.625 °C/W channel-to-case impedance allows full 200 W dissipation with modest heatsinking, simplifying thermal management in enclosed enclosures. |
Applications
| Industrial Motor Drives | Server Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 750 W brushless DC motor control in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 43 A peak phase current at 20 kHz PWM frequency. Use Value: Low RDS(on) minimizes I²R heating during continuous torque delivery; fast tf ensures clean zero-crossing commutation. |
Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for AI accelerator rack power distribution. IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with ZVS-assisted turn-on to reduce switching loss. Use Value: Controlled Qgd/Qgs ratio enables predictable Miller plateau timing for reliable ZVS window establishment. |
| Uninterruptible Power Systems | Renewable Energy Inverters |
Use Scenario: Bidirectional DC-DC stage in 3 kVA online UPS transferring energy between 48 V battery bank and 380 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch managing bidirectional 43 A current flow. Use Value: Symmetrical ±30 V VGSS rating and low leakage (<0.1 µA) ensure stable gate bias during reverse conduction phases. |
Use Scenario: Boost switch in 5 kW solar microinverter front-end converting 60–150 V PV array output to 400 V DC link. IC Role / Device Role / Timing Role: Hard-switched boost transistor subjected to repetitive 400 V blocking and 43 A conduction cycles. Use Value: 400 V VDSS margin accommodates line surge transients; 129 A ID(pulse) handles MPPT-induced current spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW45NM50FD | 500 V VDSS, 0.105 Ω RDS(on), D2PAK package, higher Ciss (4800 pF) | Higher voltage margin but lower thermal conductivity (θjc ≈ 1.2 °C/W) limits continuous power in space-constrained layouts. | Prefer when system-level overvoltage protection exceeds 450 V and PCB layout permits larger footprint. |
| IXFH42N40P | 400 V VDSS, 0.095 Ω RDS(on), TO-247 package, slower tr (220 ns), no specified trr | Lacks documented body-diode recovery data; unsuitable for freewheeling roles requiring controlled reverse recovery. | Select only for purely unidirectional switching where external diode is used for return path. |
Compared with STW45NM50FD and IXFH42N40P, the RJK4018DPK-00#T0 offers superior thermal resistance and verified body-diode trr, making it optimal for compact, high-efficiency, self-commutated power stages where heatsink mass and EMI control are critical.
Availability
RJK4018DPK-00#T0 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.
Supply support for RJK4018DPK-00#T0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The RJK4018DPK-00#T0 belongs to Renesas' high-voltage power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion systems demanding ruggedness and thermal stability.
FAQ
What is the maximum continuous drain current rating for the RJK4018DPK-00#T0?
The RJK4018DPK-00#T0 is rated for 43 A continuous drain current (ID) at case temperature Tc = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C and accounts for derating above 25 °C per the normalized transient thermal impedance curve in the datasheet.
Does the RJK4018DPK-00#T0 have a specified body-diode reverse recovery time?
Yes, the RJK4018DPK-00#T0 specifies a typical body-diode reverse recovery time (trr) of 360 ns under test conditions of IF = 43 A, diF/dt = 100 A/μs, and VGS = 0 V. This value is measured and guaranteed per the preliminary datasheet R07DS0215EJ0200 Rev2.00.
What package type does the RJK4018DPK-00#T0 use, and is the drain electrically connected to the flange?
The RJK4018DPK-00#T0 uses the TO-3P package (RENESAS code PRSS0004ZE-A), and yes-the drain is electrically connected to the metal flange (Pin 2). This configuration requires electrical isolation between the flange and heatsink unless the heatsink is referenced to drain potential.
Can the RJK4018DPK-00#T0 be used in avalanche mode, and what are its rated avalanche parameters?
Yes, the RJK4018DPK-00#T0 is rated for single-pulse avalanche operation with IAP = 14 A and EAR = 11.2 mJ at Tch ≤ 150 °C. These values are defined under standardized test conditions (STch = 25 °C) and apply only to non-repetitive surge events-not continuous operation.
What is the gate threshold voltage range for the RJK4018DPK-00#T0, and how does it affect drive circuit design?
The RJK4018DPK-00#T0 has a gate-to-source cutoff voltage (VGS(off)) range of 3.0 V to 4.5 V at ID = 1 mA and VDS = 10 V. This relatively high threshold supports noise immunity in noisy industrial environments but requires ≥10 V gate drive to achieve full RDS(on) specification.
RJK4018DPK-00#T0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 21.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 99 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P
RJK4018DPK-00#T0 FAQ
1.How can I place an order for RJK4018DPK-00#T0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK4018DPK-00#T0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK4018DPK-00#T0 reliable?
The price and inventory of RJK4018DPK-00#T0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK4018DPK-00#T0 is usually 5 days.
3.What payment methods are accepted for RJK4018DPK-00#T0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK4018DPK-00#T0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK4018DPK-00#T0?
RJK4018DPK-00#T0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK4018DPK-00#T0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK4018DPK-00#T0?
For technical support, including RJK4018DPK-00#T0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK4018DPK-00#T0 requirements.
6.How does Aetrix verify that RJK4018DPK-00#T0 is sourced from the original manufacturer or authorized distributors?
All RJK4018DPK-00#T0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK4018DPK-00#T0 meets industry standards.
7.What is the process for return or replacement of RJK4018DPK-00#T0?
All RJK4018DPK-00#T0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK4018DPK-00#T0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK4018DPK-00#T0 part is unused and in its original packaging.
Return procedure for RJK4018DPK-00#T0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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