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Renesas RJK4512DPP-00#T2

Part No.:
RJK4512DPP-00#T2
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixRJK4512DPP-00#T2.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:107

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Product details

Overview

RJK4512DPP-00#T2 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drives, featuring 450 V VDSS, 14 A continuous drain current (ID), 0.43 Ω typical RDS(on) at VGS = 10 V, and 25 ns rise time - enabling efficient 400 V industrial power supplies.

For engineers reviewing the RJK4512DPP-00#T2 datasheet, RJK4512DPP-00#T2 pinout, RJK4512DPP-00#T2 application, or RJK4512DPP-00#T2 equivalent, key selection criteria include avalanche energy rating (0.5 mJ), body-diode reverse recovery time (280 ns), gate charge (29 nC), and TO-220FN package thermal resistance (θch-c = 4.17 °C/W).

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for fast switching with low conduction loss. Its gate threshold voltage range (3.0–4.5 V) ensures reliable turn-on under standard 10 V gate drive while maintaining noise immunity.

The integrated body diode supports freewheeling in inductive loads, with specified VDF = 0.89 V (typ.) at 14 A and trr = 280 ns under di/dt = 100 A/µs - critical for synchronous rectification and flyback snubberless designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS450 V - supports 400 V DC bus applications with 12.5% margin against transient overvoltage
ID (continuous)14 A at Tc = 25°C - enables 200 W+ power stages with forced-air cooling
RDS(on)0.43 Ω (typ.) at VGS = 10 V - yields ≤ 85 W conduction loss at full load in 14 A switch mode
Qg29 nC - determines gate driver power requirement and switching loss trade-off at 100 kHz+
tr/tf25 ns / 17 ns - allows <500 ns total switching transition, minimizing overlap loss in hard-switched topologies
θch-c4.17 °C/W - enables 30 W channel dissipation with ≤125°C case temperature rise above ambient

Pinout & Package

Package: TO-220FN (RENESAS code PRSS0003AB-A), insulated tab, 3-pin through-hole, 2.0 g mass, 15 mm × 14 mm footprint, 6.5 mm height - compatible with standard TO-220 heatsinks and manual soldering.

Pin/Terminal Circuit Role Design Meaning
1 (Gate)Control electrodeReceives 10 V logic-level drive to fully enhance channel; 5.5 nC Qgs ensures fast Miller plateau exit
2 (Drain)High-side power terminalConnected to DC bus or inductive load return; rated for 450 V and 42 A pulsed current
3 (Source)Power return & referenceServes as common return path for load current and gate drive reference; bonded directly to tab for thermal conduction

Key Features

Feature Design Value
Low RDS(on)0.43 Ω typ. reduces I²R conduction loss by >30% vs. legacy 0.6 Ω 450 V MOSFETs in 12 A applications
Fast switching78 ns td(off) + 17 ns tf enables >200 kHz operation without excessive switching loss penalty
Avalanche ruggedness0.5 mJ single-pulse avalanche energy supports unclamped inductive switching in relay drivers and solenoid controls
Low leakage≤1 µA IDSS at 450 V ensures minimal standby power loss in always-on industrial controllers

Applications

Industrial Motor Drives AC-DC Power Supplies

Use Scenario: Half-bridge inverter stage for 300–400 V brushless DC motor control in HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side power switch with synchronized PWM gating; body diode handles freewheeling during low-side conduction.

Use Value: 280 ns trr and 0.89 V VDF minimize diode conduction loss and reverse recovery spikes, improving efficiency by 1.2% at 10 kHz switching.

Use Scenario: Primary-side switch in 300 W offline flyback converter for industrial PLC power modules.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz; withstands reflected output voltage plus leakage spike.

Use Value: 450 V VDSS and 0.51 Ω max RDS(on) ensure safe operation across universal AC input (85–265 VAC) with margin for line surges.

DC-DC Converters Lighting Ballasts

Use Scenario: Synchronous rectifier in isolated 48 V–12 V buck converter for telecom shelf power distribution.

IC Role / Device Role / Timing Role: Low-side switch with gate driven by transformer-coupled signal; body diode conducts during dead time.

Use Value: 14 A ID rating and 4.17 °C/W θch-c allow 100% duty cycle operation at 12 A with ≤60°C case rise on 50 cm² heatsink.

Use Scenario: Resonant half-bridge switch in electronic HID lamp ballast for street lighting.

IC Role / Device Role / Timing Role: Hard-switched resonant inverter element; must sustain repetitive avalanche during zero-voltage switching transitions.

Use Value: 3 A IAP and 0.5 mJ EAR support 10⁶-cycle reliability under 250 V bus with 10 A peak resonant current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP14NK45ZFP450 V, 14 A, RDS(on) = 0.42 Ω (typ.), but higher Qg = 45 nC and slower tr = 45 nsHigher gate drive loss and reduced max frequency capability in high-efficiency SMPSPrefer RJK4512DPP-00#T2 where gate drive power budget is constrained or >150 kHz operation required
IXTH12N45P450 V, 12 A, RDS(on) = 0.55 Ω (typ.), lower Ciss = 850 pF, but no specified trr or avalanche ratingLacks body-diode recovery spec and avalanche ruggedness - unsuitable for inductive freewheeling or unclamped switchingSelect RJK4512DPP-00#T2 for designs requiring guaranteed diode recovery performance or repetitive avalanche stress handling

Compared with STP14NK45ZFP and IXTH12N45P, the RJK4512DPP-00#T2 delivers superior switching speed (25 ns rise), lower gate charge (29 nC), and documented avalanche energy (0.5 mJ), making it optimal for high-frequency, high-reliability 400 V industrial power conversion where diode recovery and thermal margin are critical.

Availability

RJK4512DPP-00#T2 is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, and DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.

Supply support for RJK4512DPP-00#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK4512DPP-00#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for robust 400 V industrial power conversion with emphasis on avalanche tolerance, fast switching, and thermal reliability in TO-220FN packaging.

FAQ

What is the maximum continuous drain current rating for RJK4512DPP-00#T2?

The RJK4512DPP-00#T2 has a maximum continuous drain current (ID) of 14 A at case temperature Tc = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature - at 100°C case temperature, the usable ID drops to approximately 7.5 A per the Safe Operating Area curve in the official datasheet.

Does RJK4512DPP-00#T2 have an integrated body diode, and what are its key parameters?

Yes, the RJK4512DPP-00#T2 includes an integrated body-drain diode with forward voltage VDF = 0.89 V (typ.) at 14 A and reverse recovery time trr = 280 ns under di/dt = 100 A/µs. These values are measured with VGS = 0 and are critical for designing snubberless flyback or freewheeling paths in inductive switching circuits.

What is the gate threshold voltage range for RJK4512DPP-00#T2, and how does it affect drive requirements?

The RJK4512DPP-00#T2 has a gate-to-source cutoff voltage (VGS(off)) range of 3.0–4.5 V at ID = 1 mA. This ensures full enhancement with standard 10 V gate drive while providing noise margin against spurious turn-on - unlike logic-level MOSFETs, it is not intended for direct 3.3 V or 5 V MCU GPIO drive without level shifting.

Is RJK4512DPP-00#T2 suitable for avalanche-rated applications, and what is its rated avalanche energy?

Yes, the RJK4512DPP-00#T2 is characterized for single-pulse avalanche operation with an energy rating EAR = 0.5 mJ at Tch ≤ 150°C. This makes it suitable for unclamped inductive switching in relay drivers or solenoid controls, provided pulse conditions meet the datasheet's STch = 25°C test condition and current limits.

What package type does RJK4512DPP-00#T2 use, and what are its thermal characteristics?

The RJK4512DPP-00#T2 uses the TO-220FN package (RENESAS code PRSS0003AB-A), featuring an insulated tab and 4.17 °C/W channel-to-case thermal impedance. This allows 30 W channel dissipation with ≤125°C temperature rise from case to channel - essential for sustained high-current operation in compact industrial power modules.

RJK4512DPP-00#T2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RJK4512DPP-00#T2 FAQ

1.How can I place an order for RJK4512DPP-00#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK4512DPP-00#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK4512DPP-00#T2 reliable?

The price and inventory of RJK4512DPP-00#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK4512DPP-00#T2 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK4512DPP-00#T2 transactions.

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RJK4512DPP-00#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK4512DPP-00#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK4512DPP-00#T2?

For technical support, including RJK4512DPP-00#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK4512DPP-00#T2 requirements.

6.How does Aetrix verify that RJK4512DPP-00#T2 is sourced from the original manufacturer or authorized distributors?

All RJK4512DPP-00#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK4512DPP-00#T2 meets industry standards.

7.What is the process for return or replacement of RJK4512DPP-00#T2?

All RJK4512DPP-00#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK4512DPP-00#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK4512DPP-00#T2 part is unused and in its original packaging.

Return procedure for RJK4512DPP-00#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK4512DPP-00#T2 Tags

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