Renesas RJK4512DPP-00#T2
- Part No.:
- RJK4512DPP-00#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK4512DPP-00#T2.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:107
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Product details
Overview
RJK4512DPP-00#T2 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drives, featuring 450 V VDSS, 14 A continuous drain current (ID), 0.43 Ω typical RDS(on) at VGS = 10 V, and 25 ns rise time - enabling efficient 400 V industrial power supplies.
For engineers reviewing the RJK4512DPP-00#T2 datasheet, RJK4512DPP-00#T2 pinout, RJK4512DPP-00#T2 application, or RJK4512DPP-00#T2 equivalent, key selection criteria include avalanche energy rating (0.5 mJ), body-diode reverse recovery time (280 ns), gate charge (29 nC), and TO-220FN package thermal resistance (θch-c = 4.17 °C/W).
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for fast switching with low conduction loss. Its gate threshold voltage range (3.0–4.5 V) ensures reliable turn-on under standard 10 V gate drive while maintaining noise immunity.
The integrated body diode supports freewheeling in inductive loads, with specified VDF = 0.89 V (typ.) at 14 A and trr = 280 ns under di/dt = 100 A/µs - critical for synchronous rectification and flyback snubberless designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - supports 400 V DC bus applications with 12.5% margin against transient overvoltage |
| ID (continuous) | 14 A at Tc = 25°C - enables 200 W+ power stages with forced-air cooling |
| RDS(on) | 0.43 Ω (typ.) at VGS = 10 V - yields ≤ 85 W conduction loss at full load in 14 A switch mode |
| Qg | 29 nC - determines gate driver power requirement and switching loss trade-off at 100 kHz+ |
| tr/tf | 25 ns / 17 ns - allows <500 ns total switching transition, minimizing overlap loss in hard-switched topologies |
| θch-c | 4.17 °C/W - enables 30 W channel dissipation with ≤125°C case temperature rise above ambient |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), insulated tab, 3-pin through-hole, 2.0 g mass, 15 mm × 14 mm footprint, 6.5 mm height - compatible with standard TO-220 heatsinks and manual soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive to fully enhance channel; 5.5 nC Qgs ensures fast Miller plateau exit |
| 2 (Drain) | High-side power terminal | Connected to DC bus or inductive load return; rated for 450 V and 42 A pulsed current |
| 3 (Source) | Power return & reference | Serves as common return path for load current and gate drive reference; bonded directly to tab for thermal conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.43 Ω typ. reduces I²R conduction loss by >30% vs. legacy 0.6 Ω 450 V MOSFETs in 12 A applications |
| Fast switching | 78 ns td(off) + 17 ns tf enables >200 kHz operation without excessive switching loss penalty |
| Avalanche ruggedness | 0.5 mJ single-pulse avalanche energy supports unclamped inductive switching in relay drivers and solenoid controls |
| Low leakage | ≤1 µA IDSS at 450 V ensures minimal standby power loss in always-on industrial controllers |
Applications
| Industrial Motor Drives | AC-DC Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 300–400 V brushless DC motor control in HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: High-side power switch with synchronized PWM gating; body diode handles freewheeling during low-side conduction. Use Value: 280 ns trr and 0.89 V VDF minimize diode conduction loss and reverse recovery spikes, improving efficiency by 1.2% at 10 kHz switching. |
Use Scenario: Primary-side switch in 300 W offline flyback converter for industrial PLC power modules. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz; withstands reflected output voltage plus leakage spike. Use Value: 450 V VDSS and 0.51 Ω max RDS(on) ensure safe operation across universal AC input (85–265 VAC) with margin for line surges. |
| DC-DC Converters | Lighting Ballasts |
Use Scenario: Synchronous rectifier in isolated 48 V–12 V buck converter for telecom shelf power distribution. IC Role / Device Role / Timing Role: Low-side switch with gate driven by transformer-coupled signal; body diode conducts during dead time. Use Value: 14 A ID rating and 4.17 °C/W θch-c allow 100% duty cycle operation at 12 A with ≤60°C case rise on 50 cm² heatsink. |
Use Scenario: Resonant half-bridge switch in electronic HID lamp ballast for street lighting. IC Role / Device Role / Timing Role: Hard-switched resonant inverter element; must sustain repetitive avalanche during zero-voltage switching transitions. Use Value: 3 A IAP and 0.5 mJ EAR support 10⁶-cycle reliability under 250 V bus with 10 A peak resonant current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK45ZFP | 450 V, 14 A, RDS(on) = 0.42 Ω (typ.), but higher Qg = 45 nC and slower tr = 45 ns | Higher gate drive loss and reduced max frequency capability in high-efficiency SMPS | Prefer RJK4512DPP-00#T2 where gate drive power budget is constrained or >150 kHz operation required |
| IXTH12N45P | 450 V, 12 A, RDS(on) = 0.55 Ω (typ.), lower Ciss = 850 pF, but no specified trr or avalanche rating | Lacks body-diode recovery spec and avalanche ruggedness - unsuitable for inductive freewheeling or unclamped switching | Select RJK4512DPP-00#T2 for designs requiring guaranteed diode recovery performance or repetitive avalanche stress handling |
Compared with STP14NK45ZFP and IXTH12N45P, the RJK4512DPP-00#T2 delivers superior switching speed (25 ns rise), lower gate charge (29 nC), and documented avalanche energy (0.5 mJ), making it optimal for high-frequency, high-reliability 400 V industrial power conversion where diode recovery and thermal margin are critical.
Availability
RJK4512DPP-00#T2 is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, and DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.
Supply support for RJK4512DPP-00#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK4512DPP-00#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for robust 400 V industrial power conversion with emphasis on avalanche tolerance, fast switching, and thermal reliability in TO-220FN packaging.
FAQ
What is the maximum continuous drain current rating for RJK4512DPP-00#T2?
The RJK4512DPP-00#T2 has a maximum continuous drain current (ID) of 14 A at case temperature Tc = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature - at 100°C case temperature, the usable ID drops to approximately 7.5 A per the Safe Operating Area curve in the official datasheet.
Does RJK4512DPP-00#T2 have an integrated body diode, and what are its key parameters?
Yes, the RJK4512DPP-00#T2 includes an integrated body-drain diode with forward voltage VDF = 0.89 V (typ.) at 14 A and reverse recovery time trr = 280 ns under di/dt = 100 A/µs. These values are measured with VGS = 0 and are critical for designing snubberless flyback or freewheeling paths in inductive switching circuits.
What is the gate threshold voltage range for RJK4512DPP-00#T2, and how does it affect drive requirements?
The RJK4512DPP-00#T2 has a gate-to-source cutoff voltage (VGS(off)) range of 3.0–4.5 V at ID = 1 mA. This ensures full enhancement with standard 10 V gate drive while providing noise margin against spurious turn-on - unlike logic-level MOSFETs, it is not intended for direct 3.3 V or 5 V MCU GPIO drive without level shifting.
Is RJK4512DPP-00#T2 suitable for avalanche-rated applications, and what is its rated avalanche energy?
Yes, the RJK4512DPP-00#T2 is characterized for single-pulse avalanche operation with an energy rating EAR = 0.5 mJ at Tch ≤ 150°C. This makes it suitable for unclamped inductive switching in relay drivers or solenoid controls, provided pulse conditions meet the datasheet's STch = 25°C test condition and current limits.
What package type does RJK4512DPP-00#T2 use, and what are its thermal characteristics?
The RJK4512DPP-00#T2 uses the TO-220FN package (RENESAS code PRSS0003AB-A), featuring an insulated tab and 4.17 °C/W channel-to-case thermal impedance. This allows 30 W channel dissipation with ≤125°C temperature rise from case to channel - essential for sustained high-current operation in compact industrial power modules.
RJK4512DPP-00#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK4512DPP-00#T2 FAQ
1.How can I place an order for RJK4512DPP-00#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK4512DPP-00#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK4512DPP-00#T2 reliable?
The price and inventory of RJK4512DPP-00#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK4512DPP-00#T2 is usually 5 days.
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Once your RJK4512DPP-00#T2 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for RJK4512DPP-00#T2?
For technical support, including RJK4512DPP-00#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK4512DPP-00#T2 requirements.
6.How does Aetrix verify that RJK4512DPP-00#T2 is sourced from the original manufacturer or authorized distributors?
All RJK4512DPP-00#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK4512DPP-00#T2 meets industry standards.
7.What is the process for return or replacement of RJK4512DPP-00#T2?
All RJK4512DPP-00#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK4512DPP-00#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK4512DPP-00#T2 part is unused and in its original packaging.
Return procedure for RJK4512DPP-00#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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