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Renesas RJK4532DPD-00#J2
- Part No.:
- RJK4532DPD-00#J2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
RJK4532DPD-00#J2.pdf
- Description:
- MOSFET N-CH 450V 4A MP3A
- Quantity:
- Payment:
- Shipping:
Inventory:7,497
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Product details
Overview
RJK4532DPD-00#J2 from Renesas Electronics is a 450 V, 4 A N-channel power MOSFET in MP-3A (SC-63) package, optimized for high-speed switching in offline AC-DC converters and motor control inverters. It delivers RDS(on) = 1.9 Ω (typ.) at VGS = 10 V, td(off) = 20 ns, and Qg = 9.0 nC - enabling efficient hard-switching up to 100 kHz in flyback and half-bridge topologies.
For engineers reviewing the RJK4532DPD-00#J2 datasheet, RJK4532DPD-00#J2 pinout, RJK4532DPD-00#J2 application, or RJK4532DPD-00#J2 equivalent, key selection criteria include its 450 V VDSS, low gate charge for reduced drive loss, body diode trr = 215 ns for snubberless operation, and thermal resistance θch-c = 3.1 °C/W for high-power density designs.
Technical Context
This MOSFET employs a planar high-voltage silicon process with optimized cell pitch and trench-free structure to achieve stable RDS(on) vs. temperature performance and robust avalanche capability (IAP = 3 A, EAR = 0.5 mJ). Its gate threshold voltage VGS(off) = 3.5–4.5 V ensures reliable turn-off under noisy gate-drive conditions.
The device integrates a fast-recovery body diode (trr = 215 ns, dIF/dt = 100 A/μs) and exhibits low Crss = 4 pF, minimizing Miller-induced shoot-through risk in synchronous rectification and bridge configurations. Ciss = 280 pF and Qgs/Qgd ratio of 2.0/4.5 nC supports predictable gate-drive timing in PWM controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - supports universal-input (85–265 VAC) offline SMPS without derating |
| ID | 4 A continuous - enables 60–80 W output in compact flyback or 100 W in LLC resonant converters |
| RDS(on) | 1.9 Ω typ. at VGS = 10 V - reduces conduction loss to ≤15 W at full load in 4 A DC path |
| td(off) | 20 ns - allows clean dead-time control in half-bridge drivers operating above 50 kHz |
| Qg | 9.0 nC - compatible with standard 1 A peak gate drivers (e.g., IR2110, UCC27531) |
| trr | 215 ns - enables zero-voltage switching (ZVS) in quasi-resonant topologies without external diode |
| θch-c | 3.1 °C/W - permits 40.3 W channel dissipation at Tc = 25 °C with minimal heatsink |
Pinout & Package
Package: MP-3A (JEITA SC-63), surface-mount, 4-pin single-drain configuration with dual drain terminals for enhanced current handling and thermal spreading. Mass: 0.32 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; ±30 V absolute max rating |
| 2 (D) | Drain | Main high-side switching node; connected internally to both drain pins (2 & 4) |
| 3 (S) | Source | Power return and reference for gate drive; tied to PCB ground plane for low-inductance layout |
| 4 (D) | Drain | Second drain terminal - paralleled with Pin 2 to reduce package inductance and improve thermal path |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high VDSS | 1.9 Ω @ 450 V enables higher efficiency than 500 V MOSFETs with >2.5 Ω RDS(on) in same package |
| Fast body diode recovery | trr = 215 ns minimizes reverse recovery loss in discontinuous conduction mode (DCM) flybacks |
| Low Crss / Ciss ratio | Crss = 4 pF, Ciss = 280 pF → 1.4% feedback capacitance improves noise immunity and reduces gate oscillation risk |
| Avalanche-rated operation | Rated for single-pulse IAP = 3 A and EAR = 0.5 mJ - supports unclamped inductive switching in relay drivers |
| Thermally optimized package | θch-c = 3.1 °C/W allows 40 W dissipation with 1-in² 2-oz copper pad - no external heatsink required below 60 W |
Applications
| AC-DC Adapter | Industrial Motor Drive |
|---|---|
Use Scenario: 65 W universal-input adapter with active clamp flyback topology. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer during 65–100 kHz PWM cycles. Use Value: Low Qg (9.0 nC) reduces gate driver power loss; 450 V rating eliminates need for voltage clamping in 265 VAC surge conditions. |
Use Scenario: 1/4 HP BLDC inverter stage in HVAC fan control module. IC Role / Device Role / Timing Role: Low-side switching element in three-phase half-bridge leg, commutated at 16 kHz. Use Value: Fast tf = 5.0 ns and low Coss = 36 pF minimize switching loss during PWM transitions; body diode trr ensures clean freewheeling. |
| LED Streetlight Driver | UPS Inverter Stage |
Use Scenario: Constant-current 150 W LED driver using asymmetric half-bridge topology. IC Role / Device Role / Timing Role: High-side switch in resonant tank circuit operating at 120 kHz ZVS condition. Use Value: Low Crss (4 pF) prevents false turn-on during high dv/dt; RDS(on) stability over temperature maintains consistent LED current regulation. |
Use Scenario: 1 kVA online UPS DC-AC inverter with 50/60 Hz fundamental and 3 kHz carrier. IC Role / Device Role / Timing Role: Output bridge switch handling bidirectional current in sinusoidal PWM modulation. Use Value: Dual drain terminals (Pins 2 & 4) lower package inductance to <15 nH, reducing voltage overshoot during 100 A/μs di/dt transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDSS, RDS(on) = 2.4 Ω, Qg = 11 nC, TO-220FP package | Higher voltage margin but 26% higher conduction loss and 22% higher gate charge; larger footprint | Choose when 500 V rating is mandatory and board space allows TO-220FP mounting |
| IXTP4N50D2 | 500 V VDSS, RDS(on) = 2.2 Ω, td(off) = 25 ns, TO-220AB package | Slower turn-off and no integrated fast body diode (trr unspecified); requires external anti-parallel diode | Choose only if external diode integration is acceptable and 500 V margin outweighs switching speed penalty |
Compared with STP4NK50ZFP and IXTP4N50D2, the RJK4532DPD-00#J2 offers superior switching efficiency (lower Qg, faster td(off)) and integrated fast-recovery body diode in a compact surface-mount package - making it optimal for space-constrained, high-frequency SMPS where thermal management and layout simplicity are critical.
Availability
RJK4532DPD-00#J2 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor drives, and LED streetlight drivers requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.
Supply support for RJK4532DPD-00#J2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and enterprise applications.
The RJK4532DPD-00#J2 belongs to Renesas' high-voltage discrete MOSFET product line, engineered specifically for energy-efficient, high-reliability offline power conversion in consumer and industrial equipment.
FAQ
What is the maximum continuous drain current rating for RJK4532DPD-00#J2?
The RJK4532DPD-00#J2 has a continuous drain current rating of 4 A at Tc = 25 °C. This rating assumes proper PCB copper area (≥1 in² 2-oz copper) and ambient conditions per the datasheet's safe operating area (SOA) curve. At elevated case temperatures, derating applies - e.g., 2.5 A at Tc = 100 °C - as defined in the Absolute Maximum Ratings table on page 1 of R07DS0682EJ0100.
Does RJK4532DPD-00#J2 include an integrated body diode, and what are its key parameters?
Yes, the RJK4532DPD-00#J2 integrates a body-drain diode rated for 4 A continuous reverse current (IDR) and 16 A pulsed (IDR(pulse)). Its forward voltage is VDF = 0.9 V (typ.) at IF = 4 A, and reverse recovery time is trr = 215 ns (typ.) under IF = 4 A and dIF/dt = 100 A/μs - confirmed in the Electrical Characteristics table on page 2 of R07DS0682EJ0100.
What is the gate-to-source threshold voltage range for RJK4532DPD-00#J2?
The gate-to-source cutoff voltage (VGS(off)) for RJK4532DPD-00#J2 is specified as 3.5–4.5 V at VDS = 10 V and ID = 1 mA. This range ensures reliable turn-off with standard 5 V logic-level gate drivers while maintaining noise immunity in electrically noisy environments - verified in the Electrical Characteristics section of the preliminary datasheet R07DS0682EJ0100.
Can RJK4532DPD-00#J2 be used in avalanche-mode operation, and what are its limits?
Yes, the RJK4532DPD-00#J2 is rated for single-pulse avalanche operation with IAP = 3 A and EAR = 0.5 mJ at Tch ≤ 150 °C and Tst = 25 °C. These values are defined in the Absolute Maximum Ratings table (page 1) and validated per Note 3 of R07DS0682EJ0100. Repeated avalanche stress is not recommended without thermal derating and pulse-width limitation.
What is the thermal resistance from channel to case (θch-c) for RJK4532DPD-00#J2, and how is it measured?
The channel-to-case thermal resistance (θch-c) of RJK4532DPD-00#J2 is 3.1 °C/W, measured at Tc = 25 °C with the device mounted on a standard test fixture per JESD51-1. This value reflects heat flow from the silicon die through the MP-3A package's internal copper leadframe to the case surface - enabling accurate junction temperature estimation in real-world PCB layouts with adequate copper thermal pads.
RJK4532DPD-00#J2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 450 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 280 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40.3W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MP-3A
RJK4532DPD-00#J2 FAQ
1.How can I place an order for RJK4532DPD-00#J2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK4532DPD-00#J2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK4532DPD-00#J2 reliable?
The price and inventory of RJK4532DPD-00#J2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK4532DPD-00#J2 is usually 5 days.
3.What payment methods are accepted for RJK4532DPD-00#J2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK4532DPD-00#J2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK4532DPD-00#J2?
RJK4532DPD-00#J2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK4532DPD-00#J2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK4532DPD-00#J2?
For technical support, including RJK4532DPD-00#J2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK4532DPD-00#J2 requirements.
6.How does Aetrix verify that RJK4532DPD-00#J2 is sourced from the original manufacturer or authorized distributors?
All RJK4532DPD-00#J2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK4532DPD-00#J2 meets industry standards.
7.What is the process for return or replacement of RJK4532DPD-00#J2?
All RJK4532DPD-00#J2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK4532DPD-00#J2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK4532DPD-00#J2 part is unused and in its original packaging.
Return procedure for RJK4532DPD-00#J2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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