Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas RJK5002DPD-00#J2

Part No.:
RJK5002DPD-00#J2
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixRJK5002DPD-00#J2.pdf
Description:
MOSFET N-CH 500V 2.4A MP3A
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

RJK5002DPD-00#J2 from Renesas Electronics is a 500 V, 2.4 A N-channel power MOSFET in MP-3A (SC-63) package, optimized for high-speed switching in offline AC-DC converters and LED drivers. It delivers RDS(on) = 3.83 Ω (typ.) at VGS = 10 V, td(off) = 22 ns, and features integrated body diode with trr = 235 ns.

For engineers reviewing the RJK5002DPD-00#J2 datasheet, RJK5002DPD-00#J2 pinout, RJK5002DPD-00#J2 application, or RJK5002DPD-00#J2 equivalent, key selection criteria include VDSS rating, RDS(on) vs. temperature stability, safe operating area (SOA) limits, and gate charge (Qg = 6.7 nC) for driver compatibility.

Technical Context

This MOSFET employs a high-voltage planar silicon process enabling 500 V blocking capability while maintaining low conduction loss. Its SOA is defined up to 100 μs pulse width with Tc = 25 °C, and thermal resistance θch-c = 4.17 °C/W supports 30 W channel dissipation under case-cooled conditions.

The device integrates a fast-recovery body diode (VDF = 0.9 V typ. at IF = 2.4 A) with controlled reverse recovery (trr = 235 ns), making it suitable for quasi-resonant and hard-switched topologies where diode commutation stress must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - Supports universal-input offline SMPS designs up to 380 V DC bus with margin.
RDS(on)3.83 Ω typ. at ID = 1.2 A, VGS = 10 V - Enables low conduction loss in <2.4 A continuous drain current applications.
Qg6.7 nC - Low gate charge reduces driver power loss and enables efficient operation with standard gate drivers.
td(off)/tf22 ns / 22 ns - Fast turn-off and fall time support high-frequency switching (>100 kHz) with reduced switching loss.
trr235 ns - Controlled body diode recovery minimizes voltage overshoot and EMI in flyback/LLC secondary-side switching.
θch-c4.17 °C/W - Enables 30 W power handling with modest heatsinking when mounted on PCB copper area ≥ 10 cm².
VGS(off)3.5–4.5 V - Ensures reliable turn-off margin against noise in industrial environments with ±30 V gate rating.

Pinout & Package

Package: MP-3A (JEITA SC-63, Renesas PRSS0004ZG-A), surface-mount, 4-terminal configuration with dual-drain leads for enhanced current handling and thermal path.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; requires 10 V drive for full enhancement; ±30 V absolute max rating prevents ESD damage.
2 (D)DrainMain high-voltage output node; electrically connected to tab; must maintain clearance >2.5 mm to other conductors at 500 V.
3 (S)SourcePower return reference; ties to driver ground; low-inductance layout critical for stable switching.
4 (D)DrainSecond drain terminal paralleled internally with Pin 2; doubles current-carrying capacity and improves thermal spreading to PCB.

Key Features

FeatureDesign Value
Low RDS(on) with high VDSS3.83 Ω @ 500 V enables compact, efficient 20–40 W offline adapters without active cooling.
Fast switching with low Qg6.7 nC total gate charge allows clean 100–200 kHz operation using low-cost SOT-23 drivers (e.g., TC4420).
Controlled body diode recovery235 ns trr reduces snubber losses and EMI in discontinuous conduction mode (DCM) flyback converters.
Dual-drain thermal designTwo drain terminals lower package inductance and improve heat transfer to PCB copper, supporting 30 W continuous dissipation.

Applications

LED Driver Power SwitchAC-DC Adapter Primary Switch

Use Scenario: Constant-current LED driver for commercial lighting operating from 85–265 V AC input.

IC Role / Device Role / Timing Role: High-side primary-side switch in flyback topology, switching at 65 kHz with DCM control.

Use Value: RDS(on) = 3.83 Ω ensures <1.2 W conduction loss at 2.4 A peak, while trr = 235 ns suppresses voltage spikes during diode commutation.

Use Scenario: 36 W universal-input AC-DC adapter for consumer electronics with no-load power <300 mW.

IC Role / Device Role / Timing Role: Main power switch in QR flyback controller IC (e.g., ICE2QS03) with valley-switching detection.

Use Value: 500 V VDSS provides 25% margin over 400 V rectified line, and Qg = 6.7 nC enables low-driver-loss operation at 100 kHz.

Industrial Sensor Power SupplySmart Home Appliance PSU

Use Scenario: Isolated 12 V/500 mA auxiliary supply in PLC I/O module with wide ambient range (−25 to +75 °C).

IC Role / Device Role / Timing Role: Primary-side switch in fixed-frequency 65 kHz flyback, thermally managed via 2-layer PCB copper pour.

Use Value: RDS(on) drift <15% from −25 to +125 °C ensures stable efficiency across temperature; θch-c = 4.17 °C/W permits passive cooling.

Use Scenario: Compact 24 W power supply in Wi-Fi-enabled thermostat with space-constrained TO-220 footprint replacement requirement.

IC Role / Device Role / Timing Role: Surface-mount alternative to through-hole MOSFETs in legacy designs, mounted on FR4 with thermal vias.

Use Value: MP-3A package (10.4 × 6.6 mm) fits same PCB area as TO-220AB but eliminates mounting hardware and improves assembly yield.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP5NK50ZFP500 V, 4.5 A, RDS(on) = 1.4 Ω, TO-220FP package, trr = 350 nsHigher current rating but slower diode recovery; requires heatsink for >15 WPrefer when higher ID headroom is needed and board space allows TO-220 footprint.
IXTP2N50D2500 V, 2 A, RDS(on) = 4.5 Ω, TO-220 package, trr = 180 nsSlightly higher RDS(on), faster trr, but no dual-drain thermal pathChoose when ultra-low reverse recovery is prioritized over thermal performance in low-power (<15 W) designs.

Compared with STP5NK50ZFP and IXTP2N50D2, the RJK5002DPD-00#J2 uniquely balances low RDS(on), fast trr, and dual-drain thermal design in a surface-mount MP-3A package-enabling compact, self-cooled 20–30 W power supplies without mechanical heatsinks or layout compromises.

Availability

RJK5002DPD-00#J2 is available at Aetrix Electronics and suitable for offline AC-DC adapters, LED lighting drivers, and industrial auxiliary power supplies requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for RJK5002DPD-00#J2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The RJK5002DPD-00#J2 belongs to Renesas' high-voltage power MOSFET product line, engineered for energy-efficient, space-constrained offline power conversion in consumer and industrial equipment.

FAQ

What is the maximum continuous drain current rating for RJK5002DPD-00#J2?

The RJK5002DPD-00#J2 has a continuous drain current (ID) rating of 2.4 A at Ta = 25 °C, limited by channel temperature (Tch ≤ 150 °C). At elevated case temperatures, derating applies per the RDS(on) vs. Tc curve-e.g., ID drops to ~1.8 A at Tc = 100 °C. The RJK5002DPD-00#J2 must be used within its SOA boundaries, especially under pulsed conditions.

Does RJK5002DPD-00#J2 have avalanche capability, and how is it rated?

Yes, the RJK5002DPD-00#J2 is rated for single-pulse avalanche energy with IAP = 2.4 A (note 3 in Absolute Maximum Ratings). This rating assumes Tch ≤ 150 °C and defines the maximum current sustainable during unclamped inductive switching events. Designers must verify layout parasitics and ensure gate drive remains stable during avalanche to avoid cumulative degradation of the RJK5002DPD-00#J2.

What is the gate threshold voltage range for RJK5002DPD-00#J2, and how does it affect drive design?

The RJK5002DPD-00#J2 has a gate-to-source cutoff voltage (VGS(off)) of 3.5–4.5 V at ID = 1 mA, indicating strong noise immunity and reliable turn-off. To ensure full enhancement, VGS ≥ 10 V is required-verified by RDS(on) = 3.83 Ω typ. at that condition. Drive circuits for the RJK5002DPD-00#J2 must deliver ≥10 V with sufficient peak current to charge Qg = 6.7 nC rapidly.

Can RJK5002DPD-00#J2 replace through-hole MOSFETs like STP5NK50ZFP in existing designs?

The RJK5002DPD-00#J2 is not a pin-compatible drop-in replacement for STP5NK50ZFP due to different package (MP-3A vs. TO-220FP), pinout, and thermal interface. While both are 500 V devices, the RJK5002DPD-00#J2 requires re-layout for surface-mount assembly, revised thermal vias, and gate drive tuning for its lower Qg. Direct substitution is not recommended without validation of SOA, EMI, and thermal performance in the RJK5002DPD-00#J2 implementation.

Is RJK5002DPD-00#J2 suitable for automotive applications?

No-the RJK5002DPD-00#J2 is classified as a "Standard" quality grade device per Renesas documentation, intended for office equipment, consumer electronics, and industrial robots-not safety-critical automotive systems. It lacks AEC-Q101 qualification, extended temperature screening, or automotive-specific reliability testing. For automotive use, Renesas offers qualified alternatives such as the RV1C002UNT2L; the RJK5002DPD-00#J2 must not be deployed in vehicle powertrain or ADAS functions.

RJK5002DPD-00#J2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
6.7 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
165 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
30W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
MP-3A

RJK5002DPD-00#J2 FAQ

1.How can I place an order for RJK5002DPD-00#J2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK5002DPD-00#J2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK5002DPD-00#J2 reliable?

The price and inventory of RJK5002DPD-00#J2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK5002DPD-00#J2 is usually 5 days.

3.What payment methods are accepted for RJK5002DPD-00#J2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK5002DPD-00#J2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK5002DPD-00#J2?

RJK5002DPD-00#J2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK5002DPD-00#J2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK5002DPD-00#J2?

For technical support, including RJK5002DPD-00#J2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK5002DPD-00#J2 requirements.

6.How does Aetrix verify that RJK5002DPD-00#J2 is sourced from the original manufacturer or authorized distributors?

All RJK5002DPD-00#J2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK5002DPD-00#J2 meets industry standards.

7.What is the process for return or replacement of RJK5002DPD-00#J2?

All RJK5002DPD-00#J2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK5002DPD-00#J2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK5002DPD-00#J2 part is unused and in its original packaging.

Return procedure for RJK5002DPD-00#J2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK5002DPD-00#J2 Tags

  • RJK5002DPD-00#J2
  • RJK5002DPD-00#J2 PDF
  • RJK5002DPD-00#J2 Datasheet
  • RJK5002DPD-00#J2 Specifications
  • RJK5002DPD-00#J2 Images
  • Renesas
  • Renesas RJK5002DPD-00#J2
  • Buy RJK5002DPD-00#J2
  • RJK5002DPD-00#J2 Price
  • RJK5002DPD-00#J2 Distributor
  • RJK5002DPD-00#J2 Supplier
  • RJK5002DPD-00#J2 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER