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Renesas RJK5020DPK01-E
- Part No.:
- RJK5020DPK01-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK5020DPK01-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:451
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Product details
Overview
RJK5020DPK01-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and industrial power supplies. It features 500 V VDSS, 40 A continuous drain current, 0.102 Ω typical RDS(on) at VGS = 10 V, and TO-3P package with flanged drain for enhanced thermal dissipation.
For engineers reviewing the RJK5020DPK01-E datasheet, RJK5020DPK01-E pinout, RJK5020DPK01-E application, or RJK5020DPK01-E equivalent, key selection criteria include avalanche energy rating (8.6 mJ), gate charge (126 nC), body-diode reverse recovery time (450 ns), and channel-to-case thermal impedance (0.625 °C/W).
Technical Context
This MOSFET employs planar vertical DMOS architecture optimized for ruggedness in hard-switching applications. Its gate threshold voltage range (3.0–4.5 V) ensures reliable turn-on with standard 10 V gate drivers, while low Crss (55 pF) and Qgd/Qg ratio (~43%) support fast, controllable switching transitions.
The integrated body diode exhibits 0.90 V typical forward voltage at 40 A and 450 ns reverse recovery time under di/dt = 100 A/µs - enabling use in synchronous rectification and freewheeling paths without external diodes in many topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - supports 400 V bus designs with 25% margin for voltage transients |
| RDS(on) | 0.102 Ω typ. at VGS = 10 V, ID = 20 A - enables <1 W conduction loss at 40 A |
| Qg | 126 nC - determines gate drive power requirement and switching speed with 10 Ω driver |
| tr/tf | 115 ns / 125 ns - defines minimum practical switching period in hard-switched SMPS |
| EAR | 8.6 mJ - specifies single-pulse avalanche energy handling capability at Tch ≤ 150°C |
| θch-c | 0.625 °C/W - allows 200 W channel dissipation with 125°C case temperature rise |
| trr | 450 ns - limits reverse recovery losses in bridge-leg and flyback configurations |
Pinout & Package
Package: TO-3P (RENESAS code PRSS0004ZE-A), insulated metal-flanged through-hole package with drain connected to flange for direct heatsink mounting and low thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control electrode | High-impedance input requiring ~126 nC total charge for full enhancement; sensitive to ESD |
| 2 - Drain (Flange) | Main current output terminal | Internally bonded to metal flange; must be electrically isolated from heatsink unless system ground reference permits |
| 3 - Source | Reference and return path | Common node for gate drive return and load current return; establishes local ground reference for gate control |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.102 Ω typ. reduces conduction losses by >30% vs. comparable 500 V MOSFETs in 20–40 A range |
| Controlled Qgd/Qg ratio | 43% (54/126 nC) enables predictable Miller plateau timing and reduced switching overshoot |
| Rugged avalanche rating | 12.5 A IAP and 8.6 mJ EAR allow operation without snubbers in inductive load switching |
| Fast body diode | 450 ns trr and 0.90 V VDF support efficient freewheeling in non-synchronous buck and flyback converters |
| Thermal performance | 0.625 °C/W θch-c enables 200 W continuous dissipation with modest heatsinking at Tc = 25°C |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
Use Scenario: Half-bridge inverter stage for 750 W brushless DC motor control in HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 40 A peak phase current at 20 kHz PWM frequency. Use Value: Low RDS(on) minimizes I²R losses during conduction; 450 ns trr prevents shoot-through during commutation. |
Use Scenario: Primary-side switch in 1 kW LLC resonant converter for datacenter server power supply. IC Role / Device Role / Timing Role: Hard-switched main switch operating at 100–300 kHz with 400 V DC bus. Use Value: 8.6 mJ avalanche energy rating absorbs leakage inductance spikes without clamping circuitry. |
| Solar Microinverter H-Bridge | Welding Power Supply Switch |
Use Scenario: Full-bridge inverter in 300 W photovoltaic microinverter converting 40–60 V DC to 230 V AC. IC Role / Device Role / Timing Role: Synchronized switching device with precise dead-time control to prevent cross-conduction. Use Value: Low Crss (55 pF) ensures stable gate voltage during high dV/dt across drain-source during switching transitions. |
Use Scenario: Primary switch in IGBT-driven arc welding power supply with 500 V DC link and 100 A pulsed output. IC Role / Device Role / Timing Role: High-current, high-voltage switching element handling 120 A pulse current with 10 µs duration. Use Value: 120 A ID(pulse) rating and 0.625 °C/W thermal impedance support short-duration high-power bursts without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW50NM50 | 500 V, 50 A, RDS(on) = 0.10 Ω, TO-3PF package, no specified avalanche rating | Lacks documented EAR; higher Qg (140 nC) increases gate drive loss | Preferred where higher current headroom is needed but avalanche robustness is secondary |
| IXTH50N50L | 500 V, 50 A, RDS(on) = 0.11 Ω, TO-247 package, EAR = 10 mJ | TO-247 lacks integral flange; requires insulating washer; slightly higher RDS(on) | Chosen when board-level layout favors TO-247 footprint and higher avalanche margin is critical |
Compared with STW50NM50 and IXTH50N50L, the RJK5020DPK01-E offers superior thermal interface via TO-3P flange, balanced Qg/RDS(on) trade-off, and verified 8.6 mJ avalanche capability - making it optimal for space-constrained, thermally demanding industrial switching where reliability under transient overload is essential.
Availability
RJK5020DPK01-E is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and welding equipment requiring stable component supply and long-term production continuity.
Supply support for RJK5020DPK01-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, infrastructure, and IoT applications.
The RJK5020DPK01-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered specifically for rugged, high-efficiency power conversion in industrial-grade equipment operating up to 150°C channel temperature.
FAQ
What is the maximum continuous drain current rating for the RJK5020DPK01-E?
The RJK5020DPK01-E is rated for 40 A continuous drain current (ID) at Tc = 25°C. Derating applies above this case temperature per the power vs. temperature curve - at Tc = 100°C, maximum ID drops to approximately 25 A. This rating assumes proper heatsinking and adherence to the SOA limits defined in the datasheet.
Does the RJK5020DPK01-E have an integrated body diode, and what are its key parameters?
Yes, the RJK5020DPK01-E includes an integrated body-drain diode with 0.90 V typical forward voltage (VDF) at IF = 40 A and 450 ns reverse recovery time (trr) under di/dt = 100 A/µs. These values are measured with VGS = 0 and enable reliable freewheeling in non-synchronous topologies without external diode addition.
What is the gate-to-source voltage limit for the RJK5020DPK01-E, and why is it important?
The RJK5020DPK01-E has a ±30 V gate-to-source voltage rating (VGSS). Exceeding this limit risks permanent gate oxide damage. In practice, gate drive circuits should clamp at ≤ ±20 V to ensure margin against ringing or transient overvoltage - especially critical given the device's 126 nC total gate charge and potential for Miller-induced voltage spikes.
How does the RJK5020DPK01-E perform under avalanche conditions?
The RJK5020DPK01-E is characterized for single-pulse avalanche with 12.5 A peak current (IAP) and 8.6 mJ energy (EAR) at Tch ≤ 150°C. This rating allows safe operation during inductive turn-off events without external snubbers, provided pulse width and duty cycle remain within the specified test conditions (Tch = 25°C, STch ≤ 150°C).
Is the RJK5020DPK01-E compatible with standard TO-3P heatsinks?
Yes, the RJK5020DPK01-E uses the industry-standard TO-3P package (RENESAS code PRSS0004ZE-A), which matches mechanical dimensions and mounting hole pattern of generic TO-3P heatsinks. The drain-connected flange requires electrical isolation (e.g., mica washer + thermal grease) unless the heatsink is referenced to drain potential in the system design.
RJK5020DPK01-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK5020DPK01-E FAQ
1.How can I place an order for RJK5020DPK01-E through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK5020DPK01-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK5020DPK01-E reliable?
The price and inventory of RJK5020DPK01-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK5020DPK01-E is usually 5 days.
3.What payment methods are accepted for RJK5020DPK01-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK5020DPK01-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK5020DPK01-E?
RJK5020DPK01-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK5020DPK01-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK5020DPK01-E?
For technical support, including RJK5020DPK01-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK5020DPK01-E requirements.
6.How does Aetrix verify that RJK5020DPK01-E is sourced from the original manufacturer or authorized distributors?
All RJK5020DPK01-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK5020DPK01-E meets industry standards.
7.What is the process for return or replacement of RJK5020DPK01-E?
All RJK5020DPK01-E units undergo pre-shipment inspection (PSI). If there is an issue with RJK5020DPK01-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK5020DPK01-E part is unused and in its original packaging.
Return procedure for RJK5020DPK01-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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