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Renesas RJK6012DPP-E0#T2
- Part No.:
- RJK6012DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
RJK6012DPP-E0#T2.pdf
- Description:
- RJK6012DPP - N CHANNEL MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,960
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Product details
Overview
RJK6012DPP-E0#T2 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in offline AC-DC converters and motor control inverters. It features 600 V VDSS, 0.77 Ω RDS(on) at 10 V VGS, 10 A continuous drain current, and TO-220FN package with isolated heatsink tab.
For engineers reviewing the RJK6012DPP-E0#T2 datasheet, RJK6012DPP-E0#T2 pinout, RJK6012DPP-E0#T2 application, or RJK6012DPP-E0#T2 equivalent, key selection criteria include avalanche energy rating (0.49 mJ), gate charge (30 nC), body diode reverse recovery time (350 ns), and thermal impedance (4.17 °C/W).
Technical Context
This MOSFET employs planar vertical DMOS architecture optimized for hard-switched flyback and forward converters. Its gate threshold voltage range (3.0–4.5 V) ensures robust noise immunity while enabling direct drive from standard 10 V gate drivers.
Designed for unidirectional high-voltage switching, it integrates a fast-recovery body diode with 0.88 V forward voltage at 10 A, supporting synchronous rectification in secondary-side configurations without external diode replacement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports 400 V AC mains input with ≥50% safety margin in universal-input SMPS |
| RDS(on) | 0.77 Ω typ. - enables ≤7.7 W conduction loss at 10 A, suitable for 100–200 W power stages |
| Qg | 30 nC - determines gate driver power requirement and switching transition time in hard-switched topologies |
| tr/tf | 22 ns / 17 ns - minimizes overlap loss during turn-on/turn-off in 50–100 kHz converters |
| EAR | 0.49 mJ - specifies single-pulse avalanche capability for handling inductive load transients |
| θch-c | 4.17 °C/W - defines heatsink interface thermal resistance for case temperature control at 30 W Pch |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), featuring isolated metal tab for direct heatsink mounting without insulator, 2.0 g mass, and JEITA-compliant footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level signal to modulate channel conductivity; requires <30 nC total charge for full enhancement |
| 2 (Drain) | High-side power terminal | Connects to primary winding or DC bus; rated for 600 V blocking and 20 A pulsed current |
| 3 (Source) | Reference node | Serves as return path for 10 A continuous current; ties to ground or low-side switch source in half-bridge |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.77 Ω typ. reduces conduction losses in high-current, medium-voltage switching applications |
| Fast body diode | 350 ns trr enables efficient freewheeling in discontinuous conduction mode (DCM) flyback converters |
| Avalanche-rated | 0.49 mJ single-pulse energy withstand allows operation without snubber in inductive load circuits |
| Thermally enhanced package | TO-220FN's isolated tab delivers 4.17 °C/W θch-c, enabling higher power density than standard TO-220 |
Applications
| AC-DC Power Adapters | Industrial Motor Drives |
|---|---|
Use Scenario: 100–150 W universal-input offline adapter with active clamp flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer. Use Value: 0.77 Ω RDS(on) and 30 nC Qg enable >88% efficiency at full load while maintaining thermal headroom on compact heatsinks. | Use Scenario: 3-phase inverter stage for 0.5–1 kW BLDC motor control in HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge configuration. Use Value: 350 ns body diode trr minimizes cross-conduction loss during PWM dead-time, improving thermal stability. |
| LED Street Lighting Drivers | UPS Inverter Stages |
Use Scenario: Constant-current buck-boost LED driver operating from 277 V AC line. IC Role / Device Role / Timing Role: Main switching transistor regulating output current via peak-current-mode control. Use Value: 600 V VDSS provides margin against line surges up to 3 kV, meeting IEC 61000-4-5 Level 3 requirements. | Use Scenario: DC-AC H-bridge in 1 kVA online UPS with battery backup. IC Role / Device Role / Timing Role: High-side switch in push-pull output stage delivering 230 V RMS sine-wave output. Use Value: 0.49 mJ avalanche energy rating absorbs inductive kickback during grid-synchronization transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 0.7 Ω RDS(on), 25 nC Qg, TO-220FP package (non-isolated tab) | Lacks isolated heatsink tab; requires insulating pad for chassis-grounded heatsinks | Select when lower gate charge prioritized and mechanical isolation not required |
| IXTH12N60L2 | 600 V, 0.65 Ω RDS(on), 42 nC Qg, TO-247 package with higher thermal mass | Higher Qg increases driver loss; TO-247 offers better thermal performance but larger footprint | Select for higher-power designs (>250 W) where layout space permits larger package |
Compared with STP6NK60ZFP and IXTH12N60L2, the RJK6012DPP-E0#T2 uniquely combines isolated TO-220FN packaging, 30 nC gate charge, and 0.49 mJ avalanche rating-making it optimal for space-constrained, thermally demanding 100–200 W industrial power supplies requiring chassis-grounded heatsinking.
Availability
RJK6012DPP-E0#T2 is available at Aetrix Electronics and suitable for AC-DC adapters, motor drives, LED lighting drivers, and UPS inverters requiring stable component supply across production lifecycles.
Supply support for RJK6012DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The RJK6012DPP-E0#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered for reliability in offline switching power supplies and motor control systems operating up to 600 V.
FAQ
What is the maximum continuous drain current rating for RJK6012DPP-E0#T2?
The RJK6012DPP-E0#T2 has a maximum continuous drain current (ID) of 10 A at Tc = 25°C, limited by its safe operating area. Derating is required above 25°C case temperature per the SOA curve on page 3 of the datasheet, with 30 W channel dissipation defining the upper thermal boundary for sustained operation.
Does RJK6012DPP-E0#T2 have an integrated body diode, and what are its key parameters?
Yes, the RJK6012DPP-E0#T2 includes an integrated body-drain diode with typical forward voltage (VDF) of 0.88 V at 10 A and reverse recovery time (trr) of 350 ns under specified test conditions (IF = 10 A, diF/dt = 100 A/μs). This diode supports freewheeling in flyback and resonant topologies without external components.
What is the gate-to-source voltage limit for RJK6012DPP-E0#T2, and why is it critical?
The RJK6012DPP-E0#T2 specifies ±30 V gate-to-source voltage (VGS) as its absolute maximum rating. Exceeding this can cause irreversible gate oxide breakdown. Its typical VGS(off) of 3.0–4.5 V ensures reliable turn-off with standard 5 V logic margins, while 10 V drive achieves full enhancement with minimal RDS(on).
How does the TO-220FN package of RJK6012DPP-E0#T2 differ from standard TO-220?
The TO-220FN package used by RJK6012DPP-E0#T2 features an electrically isolated metal tab, allowing direct mounting to a grounded heatsink without thermal insulators. Unlike standard TO-220, this eliminates parasitic capacitance and thermal resistance from mica pads, improving both thermal performance (θch-c = 4.17 °C/W) and EMI behavior in high-frequency switching.
Can RJK6012DPP-E0#T2 be used in avalanche mode, and what is its rated energy?
Yes, the RJK6012DPP-E0#T2 is fully rated for single-pulse avalanche operation with an energy limit of 0.49 mJ at Tch ≤ 150°C. This capability allows it to safely absorb inductive energy spikes in relay drivers, solenoid controls, and transformer-coupled circuits without external clamping components.
RJK6012DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 920mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
RJK6012DPP-E0#T2 FAQ
1.How can I place an order for RJK6012DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK6012DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK6012DPP-E0#T2 reliable?
The price and inventory of RJK6012DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK6012DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK6012DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK6012DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK6012DPP-E0#T2?
RJK6012DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK6012DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK6012DPP-E0#T2?
For technical support, including RJK6012DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK6012DPP-E0#T2 requirements.
6.How does Aetrix verify that RJK6012DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK6012DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK6012DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK6012DPP-E0#T2?
All RJK6012DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK6012DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK6012DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJK6012DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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