My Inquiry
My Account
Renesas RJK6024DPD-00#J2
- Part No.:
- RJK6024DPD-00#J2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
RJK6024DPD-00#J2.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJK6024DPD-00#J2 from Renesas Electronics is a 600 V, 0.4 A high-voltage N-channel power MOSFET in MP-3A (SC-63) package, optimized for high-speed switching in offline AC/DC converters and auxiliary power supplies. It features 28 Ω typical RDS(on) at VGS = 10 V, 4.3 nC total gate charge, and 230 ns body-diode reverse recovery time - enabling efficient low-power flyback and ZVS resonant topologies.
For engineers reviewing the RJK6024DPD-00#J2 datasheet, RJK6024DPD-00#J2 pinout, RJK6024DPD-00#J2 application, or RJK6024DPD-00#J2 equivalent, this device is selected for compact, high-voltage auxiliary rails where low drive current, thermal robustness (θch-c = 4.58 °C/W), and integrated body diode performance are critical design constraints.
Technical Context
This MOSFET employs a high-voltage planar DMOS structure with optimized gate oxide and channel design to achieve stable 600 V VDSS rating and low RDS(on) while maintaining ±30 V gate tolerance. Its 7.5 pF Coss and 0.9 pF Crss support fast switching with minimal capacitive losses.
The device integrates a monolithic body-drain diode with 0.85 V typical forward voltage and 230 ns trr under 100 A/μs di/dt - enabling reliable self-commutated operation in quasi-resonant and active-clamp flyback circuits without external diode addition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full rectified 400 VAC mains input with safety margin for surge transients. |
| RDS(on) typ. | 28 Ω at ID = 0.2 A, VGS = 10 V - Enables <100 mW conduction loss in 5–12 V auxiliary supplies at 0.2 A load. |
| Qg | 4.3 nC - Reduces gate driver power requirement and enables use of low-cost SOT-23 drivers. |
| tr/tf | 14.5 ns / 77 ns - Supports >500 kHz switching in QR flyback designs with controlled EMI profile. |
| trr | 230 ns - Limits reverse recovery energy loss and prevents secondary-side diode oscillation in flyback snubberless designs. |
| θch-c | 4.58 °C/W - Allows 27.2 W channel dissipation at Tc = 25 °C, supporting thermally constrained PCB layouts. |
Pinout & Package
Package: MP-3A (JEITA SC-63), surface-mount, 4-terminal configuration with dual drain leads for enhanced current handling and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; ±30 V absolute max rating protects against transient coupling. |
| 2 (D) | Drain | Main high-side switching node; connected to primary winding or bulk capacitor in flyback/forward topologies. |
| 3 (S) | Source | Power return path and reference for gate drive; tied to primary ground or current-sense resistor. |
| 4 (D) | Drain (redundant) | Second drain terminal electrically identical to Pin 2; improves thermal conduction and reduces lead inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at high VDSS | 28 Ω typ. at 600 V rating - delivers higher efficiency than comparable 600 V MOSFETs with >40 Ω RDS(on). |
| Integrated body diode with fast trr | 230 ns trr at di/dt = 100 A/μs - eliminates need for external ultrafast diode in clamp or synchronous rectification assist roles. |
| Low gate charge | 4.3 nC Qg - reduces switching losses and eases gate driver selection for cost-sensitive low-power SMPS. |
| High-density MP-3A package | SC-63 footprint with dual drain leads - provides 2× thermal interface area vs. standard TO-220FP, improving board-level thermal management. |
Applications
| AC/DC Auxiliary Power Supply | Flyback Converter Primary Switch |
|---|---|
Use Scenario: Standby and control power generation from rectified AC mains in industrial PLCs and smart meters. IC Role / Device Role / Timing Role: High-side switching element in discontinuous conduction mode (DCM) flyback converter operating at 65–130 kHz. Use Value: 28 Ω RDS(on) and 4.3 nC Qg minimize no-load and light-load losses, meeting Energy Star Level VI standby requirements. |
Use Scenario: Primary-side switch in isolated 5–12 V, 0.3 A auxiliary rail for gate drivers and bias supplies in motor drives. IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback topology with ZVS turn-on enabled by 230 ns trr body diode. Use Value: Fast body diode recovery ensures clean zero-voltage switching across line and load range, reducing EMI and improving efficiency by ~2% over standard diodes. |
| LED Driver Auxiliary Circuit | Isolated Sensor Interface Supply |
Use Scenario: Compact 12 V/0.2 A isolated supply powering LED string controllers and dimming ICs in commercial lighting fixtures. IC Role / Device Role / Timing Role: Primary switch in low-component-count flyback with integrated transformer and minimal external parts. Use Value: Dual drain terminals and 4.58 °C/W θch-c allow full 0.4 A rating on 1-layer FR4 without heatsink - reducing BOM and assembly cost. |
Use Scenario: Galvanically isolated 5 V supply for analog sensor front-ends in HVAC and building automation systems. IC Role / Device Role / Timing Role: High-voltage switch in low-noise, low-EMI flyback delivering <10 mVpp ripple at 50 mA load. Use Value: 7.5 pF Coss and 0.9 pF Crss suppress common-mode noise injection into sensitive analog signal paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 0.6 A, RDS(on) = 2.2 Ω, TO-220FP package, 12 nC Qg | Higher current rating but 4.3× higher gate charge and larger footprint - requires stronger gate driver and more PCB area. | Prefer RJK6024DPD-00#J2 when space-constrained and gate drive capability is limited; prefer STP6NK60ZFP only if >0.4 A peak current is required. |
| IXTP01N60P | 600 V, 0.1 A, RDS(on) = 42 Ω, TO-220 package, 3.5 nC Qg | Lower current rating and higher RDS(on), but slightly lower gate charge and same voltage rating. | RJK6024DPD-00#J2 delivers 2.5× higher continuous current and 33% lower conduction loss - select only if system load is strictly ≤0.1 A and layout allows TO-220 mounting. |
Compared with STP6NK60ZFP and IXTP01N60P, RJK6024DPD-00#J2 uniquely balances 0.4 A current capability, ultra-low gate charge, and SC-63 compactness - making it optimal for space-limited auxiliary supplies where thermal density and driver simplicity are prioritized over raw current headroom.
Availability
RJK6024DPD-00#J2 is available at Aetrix Electronics and suitable for AC/DC auxiliary power supplies, flyback converter primary switches, and isolated sensor interface supplies requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for RJK6024DPD-00#J2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
RJK6024DPD-00#J2 belongs to Renesas' high-voltage power MOSFET product line designed specifically for compact, high-efficiency offline switch-mode power supplies operating up to 600 V.
FAQ
What is the maximum continuous drain current rating for RJK6024DPD-00#J2?
The RJK6024DPD-00#J2 has a rated continuous drain current (ID) of 0.4 A at Ta = 25°C. This rating assumes proper PCB copper area and ambient conditions; derating applies above 25°C ambient per the thermal resistance curve in the datasheet. The RJK6024DPD-00#J2 supports up to 0.6 A in pulsed operation (PW ≤ 10 μs, duty cycle ≤ 1%).
Does RJK6024DPD-00#J2 include an integrated body diode, and what are its key parameters?
Yes, the RJK6024DPD-00#J2 integrates a monolithic body-drain diode with 0.85 V typical forward voltage (VDF) at IF = 0.4 A and 230 ns typical reverse recovery time (trr) under di/dt = 100 A/μs. These values are measured with VGS = 0 and enable reliable self-commutation in flyback and active-clamp topologies without external diode addition. The RJK6024DPD-00#J2 body diode is not rated for continuous forward conduction beyond its specified IDR limits.
What is the gate threshold voltage range for RJK6024DPD-00#J2, and how does it affect drive requirements?
The RJK6024DPD-00#J2 has a gate-to-source cutoff voltage (VGS(off)) of 3–5 V, meaning it begins conducting significantly above 3 V and is fully enhanced near 10 V. This threshold range confirms it is a logic-level compatible device requiring only 10 V gate drive for low RDS(on). The RJK6024DPD-00#J2 is not a true 5 V-only MOSFET - operation below 8 V increases RDS(on) substantially and should be avoided in production designs.
Can RJK6024DPD-00#J2 be used in hard-switched PFC boost stages?
No, the RJK6024DPD-00#J2 is not recommended for hard-switched boost PFC due to its 0.4 A continuous current rating and relatively high RDS(on) of 28 Ω - insufficient for typical PFC output currents (>1 A). Its optimized parameters (low Qg, fast trr, compact package) target auxiliary and low-power primary-side switching, not main power conversion. For PFC, higher-current 600 V MOSFETs like RJK0610DPD or industry-standard alternatives should be selected instead of RJK6024DPD-00#J2.
What is the thermal resistance from channel to case (θch-c) for RJK6024DPD-00#J2, and how is it measured?
The RJK6024DPD-00#J2 has a channel-to-case thermal impedance (θch-c) of 4.58 °C/W, measured at Tc = 25°C with the device mounted on a standard test fixture per JESD51-1. This value reflects heat transfer from the silicon die to the exposed drain paddle - critical for estimating junction temperature rise when using direct thermal pads or metal-core PCBs. The RJK6024DPD-00#J2's dual drain terminals enhance this thermal path versus single-drain equivalents.
RJK6024DPD-00#J2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 4.3 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 37.5 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27.2W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MP-3A
RJK6024DPD-00#J2 FAQ
1.How can I place an order for RJK6024DPD-00#J2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK6024DPD-00#J2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK6024DPD-00#J2 reliable?
The price and inventory of RJK6024DPD-00#J2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK6024DPD-00#J2 is usually 5 days.
3.What payment methods are accepted for RJK6024DPD-00#J2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK6024DPD-00#J2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK6024DPD-00#J2?
RJK6024DPD-00#J2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK6024DPD-00#J2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK6024DPD-00#J2?
For technical support, including RJK6024DPD-00#J2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK6024DPD-00#J2 requirements.
6.How does Aetrix verify that RJK6024DPD-00#J2 is sourced from the original manufacturer or authorized distributors?
All RJK6024DPD-00#J2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK6024DPD-00#J2 meets industry standards.
7.What is the process for return or replacement of RJK6024DPD-00#J2?
All RJK6024DPD-00#J2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK6024DPD-00#J2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK6024DPD-00#J2 part is unused and in its original packaging.
Return procedure for RJK6024DPD-00#J2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK6024DPD-00#J2 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
