Renesas RJK6025DPD-00#J2
- Part No.:
- RJK6025DPD-00#J2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
RJK6025DPD-00#J2.pdf
- Description:
- MOSFET N-CH 600V 1A MP3A
- Quantity:
- Payment:

- Shipping:

Inventory:7,890
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJK6025DPD-00#J2 from Renesas Electronics is a 600 V, 1 A N-channel high-voltage power MOSFET in MP-3A (SC-63) package, optimized for high-speed switching in offline AC-DC converters and LED drivers. It delivers RDS(on) = 13.5 Ω (typ.) at VGS = 10 V, td(off) = 48 ns, and features integrated body diode with trr = 230 ns.
For engineers reviewing the RJK6025DPD-00#J2 datasheet, RJK6025DPD-00#J2 pinout, RJK6025DPD-00#J2 application, or RJK6025DPD-00#J2 equivalent, key selection criteria include high-voltage blocking capability, low gate charge (Qg = 5.0 nC), thermal resistance (θch-c = 4.2 °C/W), and suitability for flyback and PFC stages requiring robust 600 V operation.
Technical Context
This MOSFET employs a planar high-voltage silicon process to achieve stable 600 V VDSS with low RDS(on) and fast switching. Its gate threshold voltage (VGS(off) = 3–5 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining low IDSS (<1 μA at 600 V).
The device integrates a body diode rated for 1 A continuous reverse current and exhibits controlled reverse recovery (trr = 230 ns, diF/dt = 100 A/μs), enabling use in discontinuous conduction mode (DCM) flyback topologies without external snubbing in many cases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies |
| RDS(on) | 13.5 Ω typ. at ID = 0.5 A, VGS = 10 V - enables low conduction loss in <1 W output adapters |
| Qg | 5.0 nC - reduces gate drive power and allows use with low-current controllers like iW1700-series |
| td(off) | 48 ns - supports switching frequencies up to 100 kHz with minimal dead-time overhead |
| θch-c | 4.2 °C/W - permits 29.7 W channel dissipation at Tc = 25 °C, suitable for TO-220 footprint-equivalent heatsinking |
| trr | 230 ns - limits diode recovery loss in DCM flyback, reducing EMI and stress on clamp components |
| VGS(off) | 3–5 V - ensures clean turn-off margin against noise in high-dv/dt environments |
Pinout & Package
Package: MP-3A (JEITA SC-63), surface-mount, 4-terminal configuration with dual drain leads for enhanced current handling and thermal path. Outline code PRSS0004ZG-A; mass 0.32 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±30 V rating and low-impedance drive due to Qg = 5.0 nC |
| 2 (D) | Drain | Main high-voltage power terminal; electrically connected to tab; must be isolated from heatsink unless insulated |
| 3 (S) | Source | Reference node for gate drive and current sensing; tied to primary ground in flyback converters |
| 4 (D) | Drain | Second drain connection - paralleled internally with Pin 2 to reduce package inductance and improve thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at high VDSS | 13.5 Ω typ. enables >85% efficiency in 5–12 W AC-DC adapters without active cooling |
| Dual drain terminals | Reduces effective package inductance and improves thermal coupling to PCB copper pour |
| Controlled body diode recovery | trr = 230 ns minimizes voltage overshoot during turn-on in quasi-resonant flyback designs |
| High gate threshold margin | VGS(off) min = 3 V prevents spurious turn-on from dv/dt-induced gate coupling in high-side configurations |
| Low input capacitance | Ciss = 37.5 pF reduces Miller effect and eases gate driver stability in high-frequency operation |
Applications
| LED Driver – Non-isolated Buck | Offline Flyback Adapter |
|---|---|
Use Scenario: Constant-current LED driver for commercial signage operating directly from 230 VAC mains. IC Role / Device Role / Timing Role: Primary-side high-side switch regulating LED current via primary-side sensing and valley switching. Use Value: 600 V rating eliminates need for voltage divider networks; 13.5 Ω RDS(on) keeps thermal rise below 40 °C on 2-layer FR4 with 2 cm² copper pour. | Use Scenario: 10 W universal-input (85–265 VAC) wall adapter powering IoT sensors. IC Role / Device Role / Timing Role: Main power switch in DCM flyback converter with integrated PWM controller. Use Value: 48 ns td(off) and 5.0 nC Qg allow stable 66 kHz operation with minimal gate drive loss and no external gate resistor needed. |
| PFC Pre-regulator – Passive | Industrial Control Input Stage |
Use Scenario: Two-stage AC-DC supply where passive PFC (valley-fill) precedes regulated DC output. IC Role / Device Role / Timing Role: Switching element in high-voltage boost stage handling rectified 325 VDC peak. Use Value: 600 V VDSS provides 100 V design margin over peak line voltage; low Coss = 7.5 pF reduces capacitive turn-on loss. | Use Scenario: Isolated digital input module accepting 24–240 VAC signals in PLC backplanes. IC Role / Device Role / Timing Role: AC line interface switch enabling zero-cross detection and surge protection coordination. Use Value: Body diode forward voltage VDF = 0.85 V (typ.) ensures low conduction drop during half-wave rectification; ±30 V VGS rating withstands transient coupling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 0.9 A, RDS(on) = 14.5 Ω, TO-220FP package, td(off) = 55 ns, Qg = 6.5 nC | Through-hole mounting; higher gate charge increases driver loss at >50 kHz | Preferred for cost-sensitive, lower-frequency (<30 kHz), non-space-constrained designs |
| IXTP1R1N60P | 600 V, 1.1 A, RDS(on) = 11.5 Ω, TO-220 package, td(off) = 42 ns, Qg = 4.8 nC | Larger thermal resistance (θJA ≈ 62 °C/W); no dual drain; higher leakage (IDSS ≤ 5 μA) | Better RDS(on) and speed, but requires larger heatsink and lacks surface-mount compatibility |
Compared with STP6NK60ZFP and IXTP1R1N60P, the RJK6025DPD-00#J2 offers superior surface-mount integration, lower thermal resistance to case (4.2 °C/W), and balanced trade-offs between RDS(on), Qg, and trr for compact, high-efficiency flyback and buck LED drivers.
Availability
RJK6025DPD-00#J2 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial AC input modules, and non-isolated LED drivers requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.
Supply support for RJK6025DPD-00#J2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise systems.
The RJK6025DPD-00#J2 belongs to Renesas' high-voltage discrete MOSFET product line, designed specifically for energy-efficient, space-constrained offline power conversion in consumer and industrial equipment.
FAQ
What is the maximum continuous drain current rating for RJK6025DPD-00#J2?
The RJK6025DPD-00#J2 has a continuous drain current (ID) rating of 1 A at Ta = 25 °C. This rating assumes proper PCB layout with adequate copper area for heat dissipation. At higher ambient temperatures or with limited copper, derating applies per the SOA curve on page 3 of the datasheet. The RJK6025DPD-00#J2 also supports 2 A pulsed drain current under specified conditions (PW ≤ 10 μs, duty cycle ≤ 1%).
Does RJK6025DPD-00#J2 include an integrated body diode, and what are its key parameters?
Yes, the RJK6025DPD-00#J2 integrates a body-drain diode rated for 1 A continuous reverse current (IDR) and 2 A pulsed current. Key parameters include forward voltage VDF = 0.85 V (typ.) at IF = 1.0 A and reverse recovery time trr = 230 ns (typ.) under IF = 0.4 A, diF/dt = 100 A/μs, and VGS = 0. These values are confirmed in the Electrical Characteristics table on page 2 of the RJK6025DPD-00#J2 datasheet.
What is the gate-to-source voltage limit for RJK6025DPD-00#J2, and why is it critical?
The RJK6025DPD-00#J2 specifies a gate-to-source voltage limit (VGS) of ±30 V. Exceeding this rating risks permanent gate oxide damage. This limit is especially critical in high-dv/dt environments such as flyback primary switches, where parasitic coupling can induce gate spikes. The RJK6025DPD-00#J2's VGS(off) range (3–5 V) provides margin against false turn-on, but external clamping (e.g., Zener diode) is recommended in noisy layouts.
Can RJK6025DPD-00#J2 be used in place of a through-hole MOSFET like STP6NK60ZFP?
The RJK6025DPD-00#J2 is not a pin-compatible replacement for STP6NK60ZFP due to differing packages (MP-3A vs. TO-220FP), terminal count (4 vs. 3), and thermal path design. While both are 600 V MOSFETs, the RJK6025DPD-00#J2 requires re-layout for surface-mount assembly and leverages dual drain terminals for lower inductance. Direct substitution is not feasible without PCB redesign and thermal validation.
What is the typical total gate charge (Qg) of RJK6025DPD-00#J2, and how does it affect driver selection?
The RJK6025DPD-00#J2 has a typical total gate charge (Qg) of 5.0 nC at VDD = 480 V, VGS = 10 V, and ID = 1.0 A. This value determines gate driver current requirements: for 100 kHz switching, average gate current ≈ Qg × fsw = 0.5 mA. The RJK6025DPD-00#J2 thus pairs well with low-power controllers such as the ON Semiconductor NCP1015 or MPS MP1584, eliminating need for external driver stages in most sub-12 W designs.
RJK6025DPD-00#J2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 17.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 5 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 37.5 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 29.7W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MP-3A
RJK6025DPD-00#J2 FAQ
1.How can I place an order for RJK6025DPD-00#J2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK6025DPD-00#J2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK6025DPD-00#J2 reliable?
The price and inventory of RJK6025DPD-00#J2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK6025DPD-00#J2 is usually 5 days.
3.What payment methods are accepted for RJK6025DPD-00#J2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK6025DPD-00#J2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK6025DPD-00#J2?
RJK6025DPD-00#J2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK6025DPD-00#J2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK6025DPD-00#J2?
For technical support, including RJK6025DPD-00#J2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK6025DPD-00#J2 requirements.
6.How does Aetrix verify that RJK6025DPD-00#J2 is sourced from the original manufacturer or authorized distributors?
All RJK6025DPD-00#J2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK6025DPD-00#J2 meets industry standards.
7.What is the process for return or replacement of RJK6025DPD-00#J2?
All RJK6025DPD-00#J2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK6025DPD-00#J2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK6025DPD-00#J2 part is unused and in its original packaging.
Return procedure for RJK6025DPD-00#J2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK6025DPD-00#J2 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

