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Renesas RJK6026DPP-00#T2
- Part No.:
- RJK6026DPP-00#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK6026DPP-00#T2.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:25,529
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Product details
Overview
RJK6026DPP-00#T2 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in offline AC-DC converters and motor drive inverters. It features 600 V VDSS, 2.0 Ω typical RDS(on) at VGS = 10 V, 5 A continuous drain current, and fast switching with td(on) = 26 ns and td(off) = 53 ns - enabling efficient operation in 50–100 kHz SMPS topologies.
For engineers reviewing the RJK6026DPP-00#T2 datasheet, RJK6026DPP-00#T2 pinout, RJK6026DPP-00#T2 application, or RJK6026DPP-00#T2 equivalent, key selection criteria include avalanche ruggedness (EAR = 0.87 mJ), low gate charge (Qg = 14 nC), body-diode reverse recovery time (trr = 250 ns), and TO-220FN package thermal performance (θch-c = 4.38 °C/W).
Technical Context
This MOSFET employs planar V-groove trench-enhanced structure to achieve balanced conduction loss and switching speed. Its gate threshold voltage range (VGS(off) = 3.0–4.5 V) ensures robust noise immunity in high-dv/dt environments, while the low Ciss/Coss ratio (440 pF / 45 pF) supports stable gate drive in hard-switched flyback and forward converters.
The integrated body diode exhibits controlled reverse recovery (trr = 250 ns, diF/dt = 100 A/µs) and low forward voltage (VDF = 0.9 V typ. at IF = 5 A), making it suitable for freewheeling paths in half-bridge configurations without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Supports universal-input (85–265 VAC) offline SMPS with ≥2× safety margin against line transients. |
| RDS(on) | 2.0 Ω typ. at VGS = 10 V - Enables <1.25 W conduction loss at 5 A DC, reducing heatsink requirements in compact adapters. |
| Qg | 14 nC - Low gate charge allows efficient driving with standard 1-A peak gate drivers (e.g., IR2110, UCC27531) at 100 kHz. |
| td(off) | 53 ns - Fast turn-off minimizes overlap loss in synchronous rectification and PFC boost stages. |
| EAR | 0.87 mJ - Rated avalanche energy permits reliable unclamped inductive switching in relay drivers and solenoid controls. |
| θch-c | 4.38 °C/W - Enables 28.5 W channel dissipation at Tc = 25°C, supporting 15–20 W output in TO-220FN-mounted designs. |
| trr | 250 ns - Predictable body-diode recovery enables accurate dead-time setting in bridge-leg applications without shoot-through risk. |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), surface-mount compatible with isolated heatsink mounting via tab; 2.0 g mass; 15 mm × 14 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; input capacitance Ciss = 440 pF requires low-impedance gate driver path to minimize switching loss. |
| 2 (Drain) | High-side power terminal | Connected to primary-side high-voltage rail (up to 600 V); electrically tied to metal tab - requires full creepage/clearance isolation. |
| 3 (Source) | Reference node | Serves as return path for ID and gate drive return; low-inductance layout critical to suppress VGS ringing during fast dV/dt transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high VDSS | 2.0 Ω @ 600 V enables higher efficiency than 650 V Si-MOSFETs with >2.5 Ω RDS(on) in same package. |
| Controlled body-diode recovery | trr = 250 ns with soft recovery waveform reduces EMI generation in bridge-leg freewheeling paths. |
| Avalanche-rated operation | Specified single-pulse EAR = 0.87 mJ allows safe operation under inductive load switching without external snubbers. |
| Thermally optimized package | TO-220FN's 4.38 °C/W θch-c delivers 2× thermal performance vs. standard TO-220AB in PCB-constrained layouts. |
| Low leakage at high voltage | IDSS ≤ 1 µA @ VDS = 600 V ensures minimal standby power loss in energy-efficient EPS designs. |
Applications
| AC-DC Adapter Power Stage | PFC Boost Switch |
|---|---|
|
Use Scenario: Primary-side switch in 15–25 W universal-input flyback converters for laptop adapters and IoT power supplies. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with zero-voltage switching assist. Use Value: 2.0 Ω RDS(on) and 14 nC Qg reduce total switching + conduction losses below 1.8 W, meeting DOE VI efficiency targets. |
Use Scenario: Active switch in continuous-conduction-mode (CCM) boost PFC stage for industrial LED drivers (40–60 W). IC Role / Device Role / Timing Role: Hard-switched boost transistor handling 400 V DC link with 5 A peak current. Use Value: 600 V rating and 0.87 mJ avalanche energy prevent failure during line surges and load transients without derating. |
| Brushless DC Motor Inverter | Industrial Relay/Solenoid Driver |
|
Use Scenario: Low-side switch in 3-phase inverter for 24 V BLDC fans and pumps in HVAC systems. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled phase leg switch at 15–30 kHz. Use Value: 250 ns trr and soft-recovery body diode eliminate need for external anti-parallel diodes, simplifying BOM. |
Use Scenario: High-side driver for 24 V DC solenoids and contactors in PLC I/O modules and factory automation panels. IC Role / Device Role / Timing Role: Inductive load switch with built-in avalanche energy absorption during turn-off. Use Value: Rated 4 A avalanche current (IAP) and 0.87 mJ EAR withstand 100× rated coil energy without external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 5.5 A, RDS(on) = 1.2 Ω, Qg = 16 nC, TO-220FP package (non-isolated tab) | Lower RDS(on) but higher Qg; no avalanche rating specified - requires external TVS for inductive loads. | Preferred where lower conduction loss dominates and board-level isolation is implemented; not drop-in due to non-isolated tab. |
| IXTP50N10D2 | 100 V, 50 A, RDS(on) = 0.022 Ω, Qg = 65 nC, TO-220 package | Lower voltage rating limits use to ≤48 V systems; unsuitable for offline AC-DC or PFC. | Only viable in low-voltage motor drives where 600 V capability is unnecessary; incompatible for primary-side switching. |
Compared with STP6NK60ZFP and IXTP50N10D2, the RJK6026DPP-00#T2 uniquely balances 600 V rating, avalanche ruggedness, and thermally efficient TO-220FN packaging - making it the only option among the three qualified for unclamped inductive switching in universal-input power supplies.
Availability
RJK6026DPP-00#T2 is available at Aetrix Electronics and suitable for AC-DC adapter power stages, PFC boost switches, and industrial relay/solenoid drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for RJK6026DPP-00#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The RJK6026DPP-00#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for energy-efficient, space-constrained offline power conversion and industrial actuator control.
FAQ
What is the maximum continuous drain current rating for RJK6026DPP-00#T2 at 25°C case temperature?
The RJK6026DPP-00#T2 has a continuous drain current (ID) rating of 5 A at Tc = 25°C, limited by its maximum channel dissipation of 28.5 W and thermal impedance of 4.38 °C/W. At elevated case temperatures, derating applies per the SOA curve - e.g., 3.5 A at Tc = 100°C. The RJK6026DPP-00#T2 must be mounted on an adequately sized heatsink to sustain rated current.
Does RJK6026DPP-00#T2 have avalanche capability, and how is it specified?
Yes, the RJK6026DPP-00#T2 is fully rated for single-pulse avalanche operation with IAP = 4 A and EAR = 0.87 mJ at Tch ≤ 150°C. This is measured under standardized conditions (Tch = 25°C, VDD = 480 V) and enables reliable switching of inductive loads without external protection. The RJK6026DPP-00#T2 datasheet provides SOA and avalanche waveforms for design validation.
What is the gate threshold voltage range for RJK6026DPP-00#T2, and why does it matter?
The RJK6026DPP-00#T2 has a gate-to-source cutoff voltage (VGS(off)) range of 3.0–4.5 V at VDS = 10 V and ID = 1 mA. This relatively high and tightly controlled threshold improves noise immunity in high-dv/dt environments like SMPS primary sides, preventing unintended turn-on from coupling transients. The RJK6026DPP-00#T2 requires ≥10 V gate drive for full enhancement and low RDS(on).
Can RJK6026DPP-00#T2 be used as a direct replacement for older NEC or Renesas 600 V MOSFETs like RJK6025DPP?
No - the RJK6026DPP-00#T2 is not a pin-compatible or electrical drop-in replacement for RJK6025DPP. While both share TO-220FN packaging and 600 V rating, the RJK6026DPP-00#T2 has higher RDS(on) (2.0 Ω vs. 1.6 Ω typ.), different gate charge (14 nC vs. 12 nC), and distinct SOA boundaries. System-level validation is required before substituting the RJK6026DPP-00#T2 into legacy RJK6025DPP designs.
What is the body-diode forward voltage and reverse recovery behavior of RJK6026DPP-00#T2?
The RJK6026DPP-00#T2 body diode has a forward voltage (VDF) of 0.9 V typical at IF = 5 A and VGS = 0, with reverse recovery time (trr) of 250 ns under diF/dt = 100 A/µs. Its soft recovery characteristic minimizes voltage overshoot and EMI during commutation - a key advantage over standard MOSFETs in half-bridge and synchronous rectifier applications. The RJK6026DPP-00#T2 datasheet includes trr waveforms and di/dt dependency curves.
RJK6026DPP-00#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK6026DPP-00#T2 FAQ
1.How can I place an order for RJK6026DPP-00#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK6026DPP-00#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK6026DPP-00#T2 reliable?
The price and inventory of RJK6026DPP-00#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK6026DPP-00#T2 is usually 5 days.
3.What payment methods are accepted for RJK6026DPP-00#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK6026DPP-00#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK6026DPP-00#T2?
RJK6026DPP-00#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK6026DPP-00#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK6026DPP-00#T2?
For technical support, including RJK6026DPP-00#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK6026DPP-00#T2 requirements.
6.How does Aetrix verify that RJK6026DPP-00#T2 is sourced from the original manufacturer or authorized distributors?
All RJK6026DPP-00#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK6026DPP-00#T2 meets industry standards.
7.What is the process for return or replacement of RJK6026DPP-00#T2?
All RJK6026DPP-00#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK6026DPP-00#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK6026DPP-00#T2 part is unused and in its original packaging.
Return procedure for RJK6026DPP-00#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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