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Renesas RJK6026DPP-E0#T2
- Part No.:
- RJK6026DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
RJK6026DPP-E0#T2.pdf
- Description:
- MOSFET N-CH 600V 5A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:40,100
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Product details
Overview
RJK6026DPP-E0#T2 from Renesas Electronics is a 600 V, 5 A N-channel power MOSFET in TO-220FP package, optimized for high-speed switching in offline AC-DC converters and motor control inverters. It delivers RDS(on) = 2.0 Ω (typ.) at VGS = 10 V, td(off) = 53 ns, and Qg = 14 nC, enabling efficient hard-switching operation up to 100 kHz.
For engineers reviewing the RJK6026DPP-E0#T2 datasheet, RJK6026DPP-E0#T2 pinout, RJK6026DPP-E0#T2 application, or RJK6026DPP-E0#T2 equivalent, key selection criteria include its 600 V VDSS, low gate charge for fast turn-off, body diode trr = 250 ns, and thermal resistance θch-c = 4.38 °C/W - all critical for flyback snubberless designs and half-bridge PFC stages.
Technical Context
This MOSFET employs a planar silicon process with optimized cell layout to achieve low RDS(on) while maintaining rugged avalanche capability (EAR = 0.87 mJ). Its gate threshold voltage VGS(off) ranges from 3.0 to 4.5 V, ensuring stable turn-on under 10 V drive without unintended conduction.
The device integrates a fast-recovery body diode (trr = 250 ns, diF/dt = 100 A/μs) and exhibits Ciss = 440 pF, Coss = 45 pF, and Crss = 6 pF at VDS = 25 V - parameters directly supporting ZVS/ZCS soft-switching topologies and minimizing EMI in high-frequency SMPS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports universal-input offline SMPS without derating in 230 VAC mains applications |
| RDS(on) | 2.0 Ω typ. at ID = 2.5 A, VGS = 10 V - enables <1.25 W conduction loss at 2.5 A continuous drain current |
| Qg | 14 nC - reduces gate driver power requirement and allows use of low-cost bipolar drivers in 50–100 kHz converters |
| td(off) | 53 ns - limits switching transition time to minimize overlap loss in hard-switched half-bridges |
| trr | 250 ns - suppresses reverse recovery spikes in synchronous rectification and freewheeling paths |
| θch-c | 4.38 °C/W - permits 28.5 W channel dissipation at Tc = 25 °C, supporting heatsink-limited thermal design |
| ID | 5 A DC - defines maximum continuous output current in non-pulsed motor gate drive or DC-DC primary switches |
Pinout & Package
Package: TO-220FP (RENESAS code PRSS0003AG-A), insulated tab, vertical mounting, 1.9 g mass, 15.87 mm × 12.98 mm × 10.16 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level drive; requires 14 nC total charge for full enhancement; sensitive to ESD (±30 V max) |
| 2 (Drain) | High-side power node | Connected to 600 V rail; carries switched current and avalanche energy; electrically isolated from tab |
| 3 (Source) | Power return / reference | Serves as local ground for gate drive; ties to PCB ground plane; carries full load current and body diode reverse recovery charge |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high VDSS | 2.0 Ω @ 600 V enables higher efficiency than 650 V superjunction FETs with >2.5 Ω RDS(on) in <5 A applications |
| Fast body diode recovery | 250 ns trr reduces voltage overshoot and ringing during commutation in LLC resonant and quasi-resonant converters |
| Rugged avalanche rating | 4 A IAP / 0.87 mJ EAR allows reliable operation under inductive load switching without external clamping |
| Thermally optimized package | TO-220FP's 4.38 °C/W θch-c supports 28.5 W dissipation with minimal heatsink area in space-constrained industrial drives |
| Low Crss/Ciss ratio | 6 pF / 440 pF = 0.014 Miller ratio minimizes gate drive instability and improves dv/dt immunity in high-noise environments |
Applications
| AC-DC Flyback Converter | Brushless DC Motor Inverter |
|---|---|
Use Scenario: 36 W universal-input offline adapter with primary-side regulation and no optocoupler. IC Role / Device Role / Timing Role: Primary switch handling 600 V DC link, switching at 65 kHz with 50% duty cycle. Use Value: RDS(on) = 2.0 Ω limits conduction loss to 125 mW at 250 mA RMS, while td(off) = 53 ns ensures clean zero-voltage switching transitions. | Use Scenario: 200 W BLDC inverter for HVAC fan, using 3-phase 6-step commutation. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, conducting 5 A peak motor current with 10 μs dead-time. Use Value: Body diode trr = 250 ns prevents shoot-through during freewheeling, and Qg = 14 nC allows direct MCU GPIO drive via 10 Ω series resistor. |
| Industrial PFC Boost Stage | LED Driver Half-Bridge |
Use Scenario: Active boost PFC front-end for 120 W LED streetlight, operating in CCM at 65 kHz. IC Role / Device Role / Timing Role: Main switching element in boost converter, handling 5 A average inductor current. Use Value: Coss = 45 pF minimizes capacitive turn-on loss, and θch-c = 4.38 °C/W enables thermal design with 15 cm² aluminum heatsink. | Use Scenario: Resonant half-bridge LED driver for 150 W horticultural lighting, driving 48 V string at 100 kHz. IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge, subjected to 480 V VDD stress. Use Value: VDSS = 600 V provides 25% margin over 480 V bus, and avalanche rating absorbs leakage inductance spikes without snubber. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK60ZFP | RDS(on) = 1.8 Ω (lower), but trr = 350 ns (slower); Ciss = 520 pF (higher) | Higher conduction efficiency but increased switching loss and EMI in >60 kHz designs | Prefer when thermal budget dominates over switching frequency; avoid in ZVS topologies requiring fast diode recovery |
| IXTP5N60P | RDS(on) = 2.2 Ω (higher); Qg = 18 nC (higher); td(off) = 75 ns (slower) | Lower switching speed increases overlap loss; less suitable for compact high-frequency SMPS | Select only if legacy design compatibility or lower cost outweighs 12% higher total losses at 100 kHz |
Compared with STP5NK60ZFP and IXTP5N60P, the RJK6026DPP-E0#T2 offers optimal balance of low RDS(on), fast trr, and moderate Qg - making it preferred for space-constrained, high-frequency industrial power supplies where both conduction and switching losses must be minimized simultaneously.
Availability
RJK6026DPP-E0#T2 is available at Aetrix Electronics and suitable for AC-DC adapters, BLDC motor drives, industrial PFC modules, and LED driver half-bridges requiring stable component supply across multi-year production cycles.
Supply support for RJK6026DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK6026DPP-E0#T2 belongs to Renesas' high-voltage power MOSFET product line, designed specifically for rugged, high-efficiency switching in offline power conversion systems up to 200 W.
FAQ
What is the maximum continuous drain current rating for RJK6026DPP-E0#T2?
The RJK6026DPP-E0#T2 has a rated continuous drain current ID of 5 A at Tc = 25 °C. This rating is limited by the maximum safe operating area (SOA), not just thermal limits - meaning actual usable current drops significantly at higher VDS or elevated case temperatures. For example, at VDS = 400 V and Tc = 75 °C, the safe DC current falls to approximately 2.1 A per the SOA curve on page 3 of the datasheet.
Does RJK6026DPP-E0#T2 have avalanche capability, and how is it specified?
Yes, the RJK6026DPP-E0#T2 is fully rated for repetitive avalanche operation. Its absolute maximum ratings specify IAP = 4 A and EAR = 0.87 mJ under conditions of Tch ≤ 150 °C and single-pulse testing at Tch = 25 °C. This capability allows the RJK6026DPP-E0#T2 to safely absorb inductive energy during switching transients without external clamping in properly designed circuits.
What is the gate threshold voltage range for RJK6026DPP-E0#T2, and why does it matter?
The gate threshold voltage VGS(off) for RJK6026DPP-E0#T2 is specified from 3.0 V to 4.5 V at ID = 1 mA and VDS = 10 V. This relatively narrow and well-controlled range ensures consistent turn-on behavior across temperature and unit variation, reducing risk of partial enhancement or shoot-through in half-bridge configurations - a key reliability factor for the RJK6026DPP-E0#T2 in motor drive applications.
Can RJK6026DPP-E0#T2 be driven directly by a 3.3 V microcontroller GPIO?
No, the RJK6026DPP-E0#T2 cannot be reliably enhanced using only 3.3 V gate drive. Its minimum VGS(off) is 3.0 V, but full enhancement requires ≥10 V to achieve the specified RDS(on) = 2.0 Ω. Driving with 3.3 V would result in RDS(on) > 10 Ω and excessive conduction loss. The RJK6026DPP-E0#T2 requires a dedicated gate driver or level-shifting circuit to deliver 10–15 V to the gate terminal.
What is the thermal resistance from channel to case (θch-c) for RJK6026DPP-E0#T2, and how is it used in thermal design?
The RJK6026DPP-E0#T2 has a channel-to-case thermal resistance θch-c of 4.38 °C/W, measured at Tc = 25 °C. This value is used to calculate junction temperature rise above case temperature: ΔTj-c = Pdiss × θch-c. For example, at 28.5 W dissipation (its Pch rating), ΔTj-c = 125 °C - confirming that Tj reaches 150 °C when Tc = 25 °C, matching the absolute maximum Tch rating.
RJK6026DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 440 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 28.5W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
RJK6026DPP-E0#T2 FAQ
1.How can I place an order for RJK6026DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK6026DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK6026DPP-E0#T2 reliable?
The price and inventory of RJK6026DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK6026DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK6026DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK6026DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK6026DPP-E0#T2?
RJK6026DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK6026DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK6026DPP-E0#T2?
For technical support, including RJK6026DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK6026DPP-E0#T2 requirements.
6.How does Aetrix verify that RJK6026DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK6026DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK6026DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK6026DPP-E0#T2?
All RJK6026DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK6026DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK6026DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJK6026DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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