Renesas RJK60S3DPP-E0#T2

Overview

RJK60S3DPP-E0#T2 from Renesas Electronics is a 600 V, 12 A superjunction MOSFET in TO-220FP package, optimized for high-speed power switching in offline SMPS and PFC stages. It delivers R_DS(on) = 0.35 Ω (typ.) at V_GS = 10 V, t_f = 18 ns (typ.), and avalanche energy E_AR = 0.49 mJ - enabling compact, efficient 300–500 W AC/DC adapters and industrial power supplies.

For engineers reviewing the RJK60S3DPP-E0#T2 datasheet, RJK60S3DPP-E0#T2 pinout, RJK60S3DPP-E0#T2 application, or RJK60S3DPP-E0#T2 equivalent, key selection criteria include its 600 V V_DSS, 12 A continuous drain current at T_c = 25°C, low gate charge (Q_g = 13.6 nC), body diode reverse recovery performance (t_rr = 320 ns), and thermal resistance θ_ch-c = 4.5°C/W - all critical for hard-switched flyback and boost converters.

Technical Context

This superjunction MOSFET employs charge-compensation cell structure to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 4.76 Ω·nC. Its gate threshold voltage V_GS(off) ranges from 3 V to 5 V, ensuring robust noise immunity in high-dV/dt environments typical of bridge-leg and PFC applications.

The integrated body diode exhibits controlled reverse recovery with Q_rr = 3.7 μC and I_rr = 20 A, supporting ZVS-capable topologies. Thermal design is anchored by a channel-to-case thermal impedance of 4.5°C/W and maximum channel temperature rating of 150°C - validated under pulsed and DC conditions per JEDEC JESD51-14.

Key Specifications

Pinout & Package

Package: TO-220FP (RENESAS code PRSS0003AG-A), insulated tab, vertical mounting, 15.87 mm × 12.98 mm footprint, 1.9 g mass. Designed for through-hole PCB assembly with heatsink contact on drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW60N60DM2 and IXTH12N60L2, the RJK60S3DPP-E0#T2 offers optimal balance of low conduction loss, fast switching, and TO-220FP form factor - making it ideal for space-constrained 300–500 W industrial and lighting power supplies where thermal management and board area are critical.

Availability

RJK60S3DPP-E0#T2 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, LED streetlight drivers, server rectifiers, and EV onboard charger stages requiring stable component supply and long-term lifecycle support.

Supply support for RJK60S3DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK60S3DPP-E0#T2 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and commercial equipment.

FAQ

What is the maximum continuous drain current rating for RJK60S3DPP-E0#T2 at case temperature of 100°C?

The RJK60S3DPP-E0#T2 supports 7.6 A continuous drain current at T_c = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the 150°C maximum channel temperature. Designers must verify heatsink sizing using θ_ch-c = 4.5°C/W and actual power dissipation of the RJK60S3DPP-E0#T2 under worst-case load conditions.

Does RJK60S3DPP-E0#T2 have an integrated body diode, and what are its key reverse recovery parameters?

Yes, the RJK60S3DPP-E0#T2 includes an integrated body-drain diode with V_DF = 1.0 V (typ.) at I_F = 12 A and reverse recovery time t_rr = 320 ns (typ.). Its Q_rr = 3.7 μC and I_rr = 20 A are measured at di/dt = 100 A/μs and V_GS = 0, making it suitable for hard-switched PFC and flyback converters where diode recovery behavior directly impacts EMI and efficiency.

What gate drive voltage is required to fully enhance RJK60S3DPP-E0#T2, and what is its gate threshold range?

The RJK60S3DPP-E0#T2 has a gate-to-source cutoff voltage V_GS(off) ranging from 3 V to 5 V, and achieves R_DS(on) = 0.35 Ω (typ.) at V_GS = 10 V. A minimum gate drive of +10 V is recommended for full enhancement and minimal conduction loss; operation below 8 V increases R_DS(on) significantly and is not advised for high-efficiency designs using the RJK60S3DPP-E0#T2.

Is RJK60S3DPP-E0#T2 avalanche-rated, and what are the test conditions for its avalanche specifications?

Yes, the RJK60S3DPP-E0#T2 is avalanche-rated with I_AP = 3 A and E_AR = 0.49 mJ. These values are measured under single-pulse conditions with T_ch = 25°C and T_ch ≤ 150°C, using the standardized avalanche test circuit shown on page 6 of the datasheet. This rating applies to the RJK60S3DPP-E0#T2 itself and supports robustness against inductive switching transients in PFC and flyback applications.

What is the thermal resistance from channel to case (θ_ch-c) for RJK60S3DPP-E0#T2, and how does it impact heatsink selection?

The RJK60S3DPP-E0#T2 has a channel-to-case thermal impedance θ_ch-c of 4.5°C/W, measured per JEDEC JESD51-14. This value enables precise junction temperature estimation when paired with a known heatsink thermal resistance and total power dissipation. For example, at 27.7 W channel dissipation and a 1.5°C/W heatsink, the RJK60S3DPP-E0#T2 junction temperature reaches ~125°C - well within its 150°C limit and confirming suitability for thermally constrained industrial enclosures.