Renesas RJK60S4DPE-WS#J3

Overview

RJK60S4DPE-WS#J3 from Renesas Electronics is a 600 V, 16 A superjunction MOSFET optimized for high-speed power switching in offline SMPS, PFC stages, and industrial inverters. It delivers R_DS(on) = 0.23 Ω (typ.) at V_GS = 10 V, t_f = 17 ns (typ.), and features integrated body diode with t_rr = 363 ns - enabling efficient hard-switching operation up to 100 kHz.

For engineers reviewing the RJK60S4DPE-WS#J3 datasheet, RJK60S4DPE-WS#J3 pinout, RJK60S4DPE-WS#J3 application, or RJK60S4DPE-WS#J3 equivalent, key selection criteria include its 600 V V_DSS, 104.1 W channel dissipation at T_c = 25°C, 1.2 °C/W θ_ch-c, LDPAK(S)-(1) package thermal performance, and avalanche energy rating of 0.87 mJ.

Technical Context

This device implements a planar superjunction architecture with charge compensation pillars, enabling low R_DS(on) × Q_g trade-off (0.23 Ω × 18 nC). Its gate threshold voltage V_GS(off) ranges 3–5 V, supporting standard 10 V gate drivers while maintaining noise immunity.

Dynamic characteristics are defined under pulsed conditions: C_iss = 988 pF, C_oss = 1415 pF, and Crss = 5.1 pF at V_DS = 25 V; Q_gd/Q_gs ratio of ~0.86 supports controlled dV/dt during turn-off and reduces cross-conduction risk in bridge configurations.

Key Specifications

Pinout & Package

Package: LDPAK(S)-(1) (RENESAS code PRSS0004AE-B), surface-mount, 4-terminal thermally enhanced variant with dual drain leads for reduced source inductance and improved thermal path to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N60M2 and IPP60R190C7, the RJK60S4DPE-WS#J3 offers superior thermal resistance (1.2 °C/W vs. ≥2.5 °C/W) and faster switching (t_f = 17 ns), making it optimal for compact, high-frequency, air-cooled power systems where PCB space and thermal management are constrained.

Availability

RJK60S4DPE-WS#J3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, photovoltaic inverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for RJK60S4DPE-WS#J3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The RJK60S4DPE-WS#J3 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for RJK60S4DPE-WS#J3 at 100°C case temperature?

The RJK60S4DPE-WS#J3 supports ID = 10.1 A continuously at Tc = 100°C, as specified in the Absolute Maximum Ratings table. This derating from the 16 A rating at Tc = 25°C reflects thermal limitations of the LDPAK(S)-(1) package and ensures safe operation within the 150°C channel temperature limit. Designers must verify PCB copper area and airflow to sustain this current in real-world conditions.

Does RJK60S4DPE-WS#J3 have an integrated body diode, and what are its key parameters?

Yes, the RJK60S4DPE-WS#J3 includes a monolithic body-drain diode with VDF = 1.0 V (typ.) at IF = 16 A and trr = 363 ns (typ.) under diF/dt = 100 A/μs. Its Qrr = 4.9 μC and softness factor support efficient commutation in bridge topologies. Unlike discrete diode solutions, this integrated diode shares the same thermal path as the MOSFET channel, simplifying thermal design.

Can RJK60S4DPE-WS#J3 be used in avalanche mode, and what are the validated limits?

Yes, the RJK60S4DPE-WS#J3 is fully characterized for single-pulse unclamped inductive switching: IAP = 4 A and EAR = 0.87 mJ at Tch ≤ 150°C. These values are measured per Note 2 in the datasheet using the standardized avalanche test circuit on page 6. Repeated avalanche operation is not recommended; designers should implement proper snubbing or clamp circuits for repetitive stress.

What is the gate-to-source threshold voltage range for RJK60S4DPE-WS#J3, and how does it affect drive design?

The RJK60S4DPE-WS#J3 has VGS(off) = 3–5 V (min–max) at ID = 1 mA, confirming logic-level compatibility with 5 V microcontrollers only in saturated switching, but optimal enhancement requires VGS ≥ 10 V. Its typical RDS(on) of 0.23 Ω is guaranteed at VGS = 10 V, so gate drivers must deliver ≥10 V with ≥1 A peak current to ensure fast turn-on and minimal Miller plateau duration.

How does the LDPAK(S)-(1) package of RJK60S4DPE-WS#J3 improve thermal performance versus TO-220FP?

The LDPAK(S)-(1) package of RJK60S4DPE-WS#J3 achieves θch-c = 1.2 °C/W - 40% lower than typical TO-220FP (≈2.0 °C/W) - via dual drain terminals bonded directly to thick copper pads and reduced die-to-case interfacial resistance. This allows 104.1 W channel dissipation at Tc = 25°C, enabling smaller heatsinks or higher power density in space-constrained industrial power supplies.