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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK60S4DPP-E0#T2

Name: RJK60S4DPP-E0#T2
Brand: Renesas
SKU: RJK60S4DPP-E0#T2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK60S4DPP-E0#T2

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: RJK60S4DPP-E0#T2.pdf

Description:: MOSFET N-CH 600V 16A TO220FP

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Product details

Overview

RJK60S4DPP-E0#T2 from Renesas Electronics is a 600 V, 16 A superjunction MOSFET in TO-220FP package, optimized for high-voltage AC-DC PFC and SMPS primary-side switching. It delivers R_DS(on) = 0.23 Ω (typ.), t_f = 17 ns (typ.), and Q_g = 18 nC (typ.) at V_GS = 10 V, enabling efficient high-frequency power conversion in industrial and telecom power supplies.

For engineers reviewing the RJK60S4DPP-E0#T2 datasheet, RJK60S4DPP-E0#T2 pinout, RJK60S4DPP-E0#T2 application, or RJK60S4DPP-E0#T2 equivalent, key selection criteria include its 600 V V_DSS, 0.23 Ω R_DS(on) at 8 A/10 V, 17 ns fall time, body diode t_rr = 363 ns, and thermal resistance θ_ch-c = 4.17 °C/W - all critical for hard-switched 50–300 kHz power stages.

Technical Context

This superjunction MOSFET employs charge-compensation cell structure to achieve low R_DS(on) × Q_g figure-of-merit while maintaining 600 V breakdown rating. Its gate threshold voltage V_GS(off) = 3–5 V ensures robust noise immunity in high-dV/dt environments typical of bridge-leg configurations.

The integrated body diode exhibits V_DF = 1.0–1.6 V at I_F = 16 A and t_rr = 363 ns with I_rr = 23 A, supporting quasi-resonant and discontinuous conduction mode operation without external diode replacement in flyback or LLC primary switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full-line surge in universal-input 85–265 VAC SMPS without derating
R_DS(on)	0.23 Ω typ. at I_D = 8 A, V_GS = 10 V - Enables <1.8 W conduction loss at 8 A continuous drain current
t_f	17 ns typ. - Supports >250 kHz switching with minimal turn-off energy loss
Q_g	18 nC - Matches standard 1–2 A gate drivers without requiring boost stages
θ_ch-c	4.17 °C/W - Allows 29.9 W channel dissipation at T_c = 25°C with standard heatsinking
t_rr	363 ns - Limits diode reverse recovery loss in hard-switched topologies
V_GS(off)	3–5 V - Ensures reliable turn-on margin above gate driver dropout in noisy systems

Pinout & Package

Package: TO-220FP (RENESAS code PRSS0003AG-A), insulated flange, vertical mounting, 1.9 g mass, 15.87 mm height. Flange is electrically connected to Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level drive; R_g = 2 Ω internal gate resistance limits ringing
2 (Drain)	High-side power node	Connected to flange; requires isolation from heatsink unless referenced to same potential
3 (Source)	Power return reference	Serves as local ground for gate drive loop; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with R_DS(on) 40% lower than planar MOSFETs of same die size
Low Q_gd/Q_g ratio	6 nC / 18 nC = 0.33 - Reduces Miller-induced shoot-through risk in half-bridge configurations
Body diode softness factor	t_rr/Q_rr = 363 ns / 4.9 μC ≈ 74 A/μs - Minimizes voltage overshoot during diode commutation
Avalanche rated	I_AP = 4 A, E_AR = 0.87 mJ - Withstands single-pulse inductive switching stress without derating
Thermal stability	R_DS(on) increases only 2.4× from −25°C to 125°C - Predictable loss behavior across industrial temperature range

Applications

Server PSU Primary Switch	Industrial AC-DC Converter
Use Scenario: High-efficiency 1 kW server power supply operating at 100–300 kHz in continuous conduction mode PFC + LLC resonant stage. IC Role / Device Role / Timing Role: Primary-side switching device in PFC boost stage and LLC half-bridge power switch. Use Value: 0.23 Ω R_DS(on) and 17 ns t_f reduce total power loss by ≥12% vs. legacy 600 V MOSFETs at 200 kHz, improving system efficiency from 94% to 95.2%.	Use Scenario: 3-phase 400 VAC input rectified to 540 VDC bus feeding isolated DC-DC converters in factory automation PLC power modules. IC Role / Device Role / Timing Role: Main switching transistor in active clamp forward or phase-shifted full-bridge topology. Use Value: 600 V V_DSS and 4.17 °C/W θ_ch-c allow direct use on 540 V bus with 25°C heatsink rise, eliminating need for series stacking or voltage derating.
Telecom Rectifier Module	EV Charger Auxiliary Power Supply
Use Scenario: 48 V output, 3 kW telecom rectifier with dual interleaved PFC followed by phase-shifted full-bridge DC-DC stage. IC Role / Device Role / Timing Role: High-side switch in PFC boost cells handling 16 A peak current per phase. Use Value: 16 A I_D rating and 32 A I_D(pulse) support 100% load step response without thermal throttling under transient conditions.	Use Scenario: 12 V/20 A auxiliary power supply inside 22 kW AC EV charger, converting 400 VDC battery bus to low-voltage control rail. IC Role / Device Role / Timing Role: Primary switch in flyback converter operating in discontinuous conduction mode at 65 kHz. Use Value: Body diode t_rr = 363 ns and Q_rr = 4.9 μC prevent secondary-side voltage spikes >100 V, eliminating need for snubber networks.

Server PSU Primary Switch

Industrial AC-DC Converter

Use Scenario: High-efficiency 1 kW server power supply operating at 100–300 kHz in continuous conduction mode PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Primary-side switching device in PFC boost stage and LLC half-bridge power switch.

Use Value: 0.23 Ω R_DS(on) and 17 ns t_f reduce total power loss by ≥12% vs. legacy 600 V MOSFETs at 200 kHz, improving system efficiency from 94% to 95.2%.

Use Scenario: 3-phase 400 VAC input rectified to 540 VDC bus feeding isolated DC-DC converters in factory automation PLC power modules.

IC Role / Device Role / Timing Role: Main switching transistor in active clamp forward or phase-shifted full-bridge topology.

Use Value: 600 V V_DSS and 4.17 °C/W θ_ch-c allow direct use on 540 V bus with 25°C heatsink rise, eliminating need for series stacking or voltage derating.

Telecom Rectifier Module

EV Charger Auxiliary Power Supply

Use Scenario: 48 V output, 3 kW telecom rectifier with dual interleaved PFC followed by phase-shifted full-bridge DC-DC stage.

IC Role / Device Role / Timing Role: High-side switch in PFC boost cells handling 16 A peak current per phase.

Use Value: 16 A I_D rating and 32 A I_D(pulse) support 100% load step response without thermal throttling under transient conditions.

Use Scenario: 12 V/20 A auxiliary power supply inside 22 kW AC EV charger, converting 400 VDC battery bus to low-voltage control rail.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating in discontinuous conduction mode at 65 kHz.

Use Value: Body diode t_rr = 363 ns and Q_rr = 4.9 μC prevent secondary-side voltage spikes >100 V, eliminating need for snubber networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	R_DS(on) = 0.20 Ω, Q_g = 22 nC, t_f = 20 ns, TO-247 package	Higher gate charge increases driver loss; larger TO-247 footprint requires PCB redesign	Preferred when lower R_DS(on) justifies higher cost and layout change
IXTH16N60L2	R_DS(on) = 0.30 Ω, Q_g = 15 nC, t_f = 25 ns, TO-247 package	Lower Q_g eases gate drive but higher R_DS(on) raises conduction loss by ~30%	Selected where gate drive simplicity outweighs efficiency penalty in cost-sensitive designs

Compared with STW60N60DM6 and IXTH16N60L2, RJK60S4DPP-E0#T2 offers optimal balance of R_DS(on), Q_g, and package compatibility for TO-220FP-restricted layouts - delivering 0.23 Ω conduction resistance with 18 nC gate charge in a thermally efficient insulated-flange package.

Availability

RJK60S4DPP-E0#T2 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for RJK60S4DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

RJK60S4DPP-E0#T2 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability primary-side switching in 500–600 V industrial and telecom power systems.

FAQ

What is the maximum continuous drain current rating for RJK60S4DPP-E0#T2 at 100°C case temperature?

The RJK60S4DPP-E0#T2 supports 10 A continuous drain current (I_D) at T_c = 100°C, as specified in its Absolute Maximum Ratings table. This derating from the 16 A rating at 25°C reflects thermal limitations of the TO-220FP package and ensures safe operation within the 150°C channel temperature limit. Designers must verify heatsink performance to maintain T_c ≤ 100°C under full-load conditions.

Does RJK60S4DPP-E0#T2 have avalanche capability, and how is it rated?

Yes, the RJK60S4DPP-E0#T2 is avalanche-rated with I_AP = 4 A and E_AR = 0.87 mJ under single-pulse conditions (T_ch ≤ 150°C). This rating enables robustness against inductive switching transients in hard-switched topologies without external clamping. The RJK60S4DPP-E0#T2 datasheet specifies test conditions using L × I_AP²/2 energy calculation, confirming suitability for designs where unclamped inductive loads may occur.

What is the gate-to-source threshold voltage range for RJK60S4DPP-E0#T2, and why does it matter?

The RJK60S4DPP-E0#T2 has a gate-to-source cutoff voltage V_GS(off) of 3–5 V, measured at I_D = 1 mA and V_DS = 10 V. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin against spurious turn-on from dV/dt coupling in high-power circuits. The RJK60S4DPP-E0#T2's defined threshold supports predictable timing in PWM-controlled power stages without requiring overvoltage gate drive.

How does the body diode performance of RJK60S4DPP-E0#T2 compare to standard silicon diodes in flyback applications?

The RJK60S4DPP-E0#T2 body diode delivers V_DF = 1.0–1.6 V at I_F = 16 A and t_rr = 363 ns, with soft recovery (I_rr = 23 A, Q_rr = 4.9 μC). In flyback converters, this reduces voltage overshoot and EMI compared to fast-recovery diodes, eliminating snubbers in many cases. Unlike discrete diodes, the RJK60S4DPP-E0#T2 body diode is monolithically matched to the MOSFET's thermal profile, ensuring consistent performance across temperature.

Is RJK60S4DPP-E0#T2 compatible with standard TO-220FP footprints and mounting hardware?

Yes, the RJK60S4DPP-E0#T2 uses the JEITA-standard TO-220FP package (RENESAS code PRSS0003AG-A) with 15.87 mm height, 10.16 mm width, and flange-mounting holes matching industry-standard TO-220FP mechanical drawings. Its insulated flange allows direct heatsink mounting without additional isolation washers, and the 1.9 g mass ensures mechanical stability in vibration-prone industrial environments. The RJK60S4DPP-E0#T2 pinout (G-D-S) aligns with common TO-220FP layout templates.

RJK60S4DPP-E0#T2 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 988 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 29.9W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

RJK60S4DPP-E0#T2 FAQ

1.How can I place an order for RJK60S4DPP-E0#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK60S4DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK60S4DPP-E0#T2 reliable?

The price and inventory of RJK60S4DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK60S4DPP-E0#T2 is usually 5 days.

3.What payment methods are accepted for RJK60S4DPP-E0#T2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK60S4DPP-E0#T2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK60S4DPP-E0#T2?

RJK60S4DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK60S4DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK60S4DPP-E0#T2?

For technical support, including RJK60S4DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK60S4DPP-E0#T2 requirements.

6.How does Aetrix verify that RJK60S4DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?

All RJK60S4DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK60S4DPP-E0#T2 meets industry standards.

7.What is the process for return or replacement of RJK60S4DPP-E0#T2?

All RJK60S4DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK60S4DPP-E0#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK60S4DPP-E0#T2 part is unused and in its original packaging.

Return procedure for RJK60S4DPP-E0#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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