Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK60S7DPP-E0#T2

Name: RJK60S7DPP-E0#T2
Brand: Renesas
SKU: RJK60S7DPP-E0#T2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: RJK60S7DPP-E0#T2

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: RJK60S7DPP-E0#T2.pdf

Description:: MOSFET N-CH 600V 30A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:27

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

RJK60S7DPP-E0#T2 from Renesas Electronics is a 600 V, 30 A superjunction MOSFET in TO-220FP package, optimized for high-speed power switching in offline SMPS and PFC stages. It delivers R_DS(on) = 0.100 Ω (typ.) at V_GS = 10 V, t_f = 9 ns (typ.), and integrates a fast-recovery body diode with t_rr = 490 ns - enabling efficient operation in hard-switched 85–265 VAC input converters.

For engineers reviewing the RJK60S7DPP-E0#T2 datasheet, RJK60S7DPP-E0#T2 pinout, RJK60S7DPP-E0#T2 application, or RJK60S7DPP-E0#T2 equivalent, key selection criteria include its 600 V V_DSS, 30 A I_D rating at T_c = 25°C, low Q_g = 39 nC, and thermal resistance θ_ch-c = 3.6°C/W - all critical for high-density, thermally constrained industrial power designs.

Technical Context

This device implements a planar superjunction structure to achieve high voltage blocking with low conduction loss. Its gate threshold voltage V_GS(off) ranges from 3.0 to 5.0 V, ensuring robust noise immunity in noisy power environments while remaining compatible with standard 10 V gate drivers.

The integrated body diode exhibits V_DF = 1.0–1.6 V at I_F = 30 A and controlled reverse recovery (Q_rr = 7.1 μC, I_rr = 26 A), reducing switching losses and EMI in continuous-conduction-mode PFC circuits without requiring external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in offline converters
I_D (T_c = 25°C)	30 A - enables 500–750 W continuous output in TO-220FP-mounted PFC or main switch applications
R_DS(on)	0.100 Ω (typ.) - reduces conduction loss to ≤45 W at 30 A, easing thermal design in compact enclosures
t_f	9 ns (typ.) - minimizes turn-off energy loss during high-frequency (≥100 kHz) switching
Q_g	39 nC - allows drive with standard gate drivers (e.g., IR2110, UCC27531) without excessive power dissipation
θ_ch-c	3.6°C/W - enables 34.7 W channel dissipation at T_c = 25°C, supporting heatsink-limited industrial layouts
t_rr	490 ns - ensures predictable diode commutation in bridgeless PFC, limiting voltage overshoot and ringing

Pinout & Package

Package: TO-220FP (RENESAS code PRSS0003AG-A), surface-mount compatible with insulated mounting hardware; 15.87 mm × 10.16 mm × 4.7 mm profile; 1.9 g mass; drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 0–10 V logic-level signal; requires <2.0 Ω series gate resistor to damp oscillation during fast switching
2 (Drain)	High-voltage power output	Connected to primary-side high-side node (e.g., PFC boost output or LLC half-bridge leg); electrically tied to metal tab
3 (Source)	Power return reference	Serves as local ground reference for gate driver; must be routed with low-inductance path to minimize dV/dt coupling

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V breakdown with R_DS(on) 40% lower than conventional VDMOS at same die size
Low Crss / Ciss ratio	Crss = 10 pF, Ciss = 2300 pF → Miller ratio <0.45%, improving dv/dt immunity and reducing gate drive loss
Repetitive avalanche rated	EAR = 3.06 mJ at T_ch ≤ 150°C - withstands transient overvoltage events without derating in well-designed clamped topologies
Body diode softness factor	t_rr/Q_rr ≈ 69 ns/μC - limits di/dt-induced voltage spikes during zero-current switching transitions
Thermal stability	R_DS(on) increases only 2.5× from 25°C to 150°C - maintains predictable conduction loss across full operating range

Applications

Industrial PFC Boost Stage	Server PSU Primary Switch
Use Scenario: Active front-end rectification in 1 kW telecom rectifiers operating at 100 kHz with 96% efficiency target. IC Role / Device Role / Timing Role: High-side switching element in continuous-conduction-mode boost converter; handles 30 A peak inductor current. Use Value: Low R_DS(on) and fast t_f reduce total switching + conduction loss by 18% vs. legacy 650 V MOSFETs, directly enabling 80 PLUS Titanium compliance.	Use Scenario: Main switch in resonant LLC half-bridge for 2 kW AI server power supplies with forced-air cooling. IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side synchronous rectification stage (used in dual-active-bridge variants). Use Value: Body diode t_rr = 490 ns and Q_rr = 7.1 μC enable clean ZVS transition at 500 kHz, eliminating reverse recovery loss and associated EMI.
EV Onboard Charger Input Stage	Industrial Motor Drive Inverter Leg
Use Scenario: DC-link switching in bidirectional OBC modules converting 400 V battery to 400 V AC grid, operating in DAB topology. IC Role / Device Role / Timing Role: High-voltage switch in primary-side H-bridge of dual-active-bridge converter; rated for 600 V DC-link. Use Value: 600 V V_DSS and 7.5 A I_AP avalanche rating allow safe operation during line transients and short-circuit fault conditions without external crowbar.	Use Scenario: Upper-leg switch in 3-phase 7.5 kW HVAC inverter driving permanent-magnet motor at 4 kHz PWM. IC Role / Device Role / Timing Role: High-side IGBT replacement in 600 V inverter leg; operated with 15 V gate drive and active Miller clamp. Use Value: R_DS(on) = 0.100 Ω at 15 A reduces conduction loss by 35% vs. comparable IGBTs, lowering heatsink requirements and improving partial-load efficiency.

Industrial PFC Boost Stage

Server PSU Primary Switch

Use Scenario: Active front-end rectification in 1 kW telecom rectifiers operating at 100 kHz with 96% efficiency target.

IC Role / Device Role / Timing Role: High-side switching element in continuous-conduction-mode boost converter; handles 30 A peak inductor current.

Use Value: Low R_DS(on) and fast t_f reduce total switching + conduction loss by 18% vs. legacy 650 V MOSFETs, directly enabling 80 PLUS Titanium compliance.

Use Scenario: Main switch in resonant LLC half-bridge for 2 kW AI server power supplies with forced-air cooling.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side synchronous rectification stage (used in dual-active-bridge variants).

Use Value: Body diode t_rr = 490 ns and Q_rr = 7.1 μC enable clean ZVS transition at 500 kHz, eliminating reverse recovery loss and associated EMI.

EV Onboard Charger Input Stage

Industrial Motor Drive Inverter Leg

Use Scenario: DC-link switching in bidirectional OBC modules converting 400 V battery to 400 V AC grid, operating in DAB topology.

IC Role / Device Role / Timing Role: High-voltage switch in primary-side H-bridge of dual-active-bridge converter; rated for 600 V DC-link.

Use Value: 600 V V_DSS and 7.5 A I_AP avalanche rating allow safe operation during line transients and short-circuit fault conditions without external crowbar.

Use Scenario: Upper-leg switch in 3-phase 7.5 kW HVAC inverter driving permanent-magnet motor at 4 kHz PWM.

IC Role / Device Role / Timing Role: High-side IGBT replacement in 600 V inverter leg; operated with 15 V gate drive and active Miller clamp.

Use Value: R_DS(on) = 0.100 Ω at 15 A reduces conduction loss by 35% vs. comparable IGBTs, lowering heatsink requirements and improving partial-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	600 V, 60 A, R_DS(on) = 0.085 Ω, Q_g = 52 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge - requires stronger gate driver and more PCB area	Select when >30 A continuous current or higher avalanche energy (E_AR = 4.2 mJ) is required; not drop-in due to TO-247 vs. TO-220FP
IXFH60N60X3	600 V, 60 A, R_DS(on) = 0.085 Ω, t_f = 12 ns, TO-247 package	Slower fall time and no specified body diode t_rr - less suitable for PFC where diode recovery dominates loss	Prefer for hard-switched flyback or forward converters where diode recovery is non-critical; requires layout revision for TO-247 mounting

Compared with STW60N60DM6 and IXFH60N60X3, the RJK60S7DPP-E0#T2 offers optimal balance of low gate charge (39 nC), fast diode recovery (490 ns), and TO-220FP form factor - making it uniquely suited for space-constrained, high-efficiency PFC and mid-power SMPS where thermal density and EMI control are prioritized over raw current headroom.

Availability

RJK60S7DPP-E0#T2 is available at Aetrix Electronics and suitable for industrial power supplies, server PSUs, and EV onboard chargers requiring stable component supply and long-term manufacturing continuity.

Supply support for RJK60S7DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global R&D and manufacturing infrastructure.

The RJK60S7DPP-E0#T2 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC conversion in industrial and computing power systems.

FAQ

What is the maximum continuous drain current rating for RJK60S7DPP-E0#T2 at case temperature 100°C?

The RJK60S7DPP-E0#T2 has a maximum continuous drain current I_D of 19 A when the case temperature (T_c) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220FP package and ensures reliable operation within the 150°C channel temperature limit. The RJK60S7DPP-E0#T2 must be mounted on an appropriately sized heatsink to sustain this current continuously.

Does RJK60S7DPP-E0#T2 have an avalanche-rated capability, and what is its repetitive avalanche energy?

Yes, the RJK60S7DPP-E0#T2 is rated for repetitive avalanche operation with E_AR = 3.06 mJ under test conditions of T_ch ≤ 150°C and V_DD = 50 V. This rating is confirmed in the Absolute Maximum Ratings table and validated per Note 2. The RJK60S7DPP-E0#T2 can safely absorb single-pulse inductive energy up to this level without failure, supporting robust design in flyback or LLC resonant converters with unclamped inductive loads.

What is the typical gate-to-source threshold voltage range for RJK60S7DPP-E0#T2, and how does it vary with temperature?

The RJK60S7DPP-E0#T2 has a gate-to-source cutoff voltage V_GS(off) ranging from 3.0 V to 5.0 V at T_a = 25°C, with typical behavior showing slight decrease as temperature rises - approximately 4.5 V at 125°C per the "V_GS(off) vs. Case Temperature" curve on page 5. This stable threshold ensures reliable turn-on with standard 10 V gate drivers while maintaining noise margin above 3 V in industrial environments. The RJK60S7DPP-E0#T2 remains fully enhanced across its full operating temperature range.

Can RJK60S7DPP-E0#T2 be used in place of a traditional 650 V MOSFET in a 400 V DC-link application?

Yes, the RJK60S7DPP-E0#T2 is suitable for 400 V DC-link applications such as motor drives and DC-DC converters, as its 600 V V_DSS provides adequate margin against voltage transients and ringing. Its R_DS(on) = 0.100 Ω and low Q_g = 39 nC deliver superior efficiency compared to many 650 V alternatives. However, the RJK60S7DPP-E0#T2 must be evaluated for specific layout parasitics and gate drive strength, as its fast switching demands careful PCB routing to avoid false triggering.

Is the body diode of RJK60S7DPP-E0#T2 suitable for synchronous rectification in LLC resonant converters?

The RJK60S7DPP-E0#T2 body diode is characterized with t_rr = 490 ns, Q_rr = 7.1 μC, and I_rr = 26 A - parameters sufficient for synchronous rectification in LLC converters operating below 300 kHz. While not optimized as a dedicated SR FET, its soft recovery and low V_DF (1.0–1.6 V) reduce dead-time loss and voltage overshoot. For best results, the RJK60S7DPP-E0#T2 should be paired with precise timing control and gate drive slew-rate tuning to avoid cross-conduction.

RJK60S7DPP-E0#T2 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: +30V, -20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 34.7W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

RJK60S7DPP-E0#T2 FAQ

1.How can I place an order for RJK60S7DPP-E0#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK60S7DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK60S7DPP-E0#T2 reliable?

The price and inventory of RJK60S7DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK60S7DPP-E0#T2 is usually 5 days.

3.What payment methods are accepted for RJK60S7DPP-E0#T2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK60S7DPP-E0#T2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK60S7DPP-E0#T2?

RJK60S7DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK60S7DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK60S7DPP-E0#T2?

For technical support, including RJK60S7DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK60S7DPP-E0#T2 requirements.

6.How does Aetrix verify that RJK60S7DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?

All RJK60S7DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK60S7DPP-E0#T2 meets industry standards.

7.What is the process for return or replacement of RJK60S7DPP-E0#T2?

All RJK60S7DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK60S7DPP-E0#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK60S7DPP-E0#T2 part is unused and in its original packaging.

Return procedure for RJK60S7DPP-E0#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…