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Renesas RJL6013DPP-00#T2
- Part No.:
- RJL6013DPP-00#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJL6013DPP-00#T2.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,280
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Product details
Overview
RJL6013DPP-00#T2 from Renesas is a silicon N-channel power MOSFET designed for high-voltage, high-speed switching in offline SMPS and motor drive inverters. It features 600 V VDSS, 0.66 Ω typical RDS(on) at 10 V VGS, built-in fast-recovery body diode (trr = 180 ns), and TO-220FN package with isolated heatsink tab.
For engineers reviewing the RJL6013DPP-00#T2 datasheet, RJL6013DPP-00#T2 pinout, RJL6013DPP-00#T2 application, or RJL6013DPP-00#T2 equivalent, key selection criteria include avalanche energy rating (0.87 mJ), gate charge (38 nC), thermal impedance (4.17 °C/W), and safe operating area limits under pulse conditions.
Technical Context
This MOSFET employs planar vertical DMOS structure optimized for ruggedness in hard-switched 480 V bus applications. Its gate threshold voltage (VGS(off) = 2.0–4.0 V) enables reliable turn-on with standard 10 V gate drivers while maintaining low leakage (IDSS ≤ 10 µA at 600 V).
The integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies. Dynamic parameters-including Ciss = 1400 pF, Coss = 135 pF, and Qgd/Qgs ratio of ~2.6-indicate controlled switching behavior suitable for ZVS-capable converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full 480 V DC bus with margin for transient spikes in industrial AC/DC supplies. |
| RDS(on) | 0.66 Ω typ - Enables <1.5 W conduction loss at 5.5 A continuous drain current with 10 V gate drive. |
| trr | 180 ns - Reduces reverse recovery losses and EMI in bridge-leg commutation versus standard diodes. |
| Qg | 38 nC - Matches common 1–2 A peak gate drivers; Qgd/Qgs ratio supports stable Miller immunity. |
| θch-c | 4.17 °C/W - Allows 30 W channel dissipation at Tc = 25°C; requires mechanical mounting to heatsink via isolated tab. |
| EAR | 0.87 mJ - Supports single-pulse unclamped inductive switching up to 4 A without failure under defined test conditions. |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), thermally enhanced variant with electrically isolated metal tab for direct heatsink mounting and improved thermal reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive signal; requires 10 V for full enhancement; ±30 V absolute max rating. |
| 2 (Drain) | High-side switch node | Connects to high-voltage DC bus (up to 600 V); carries main load current and avalanche stress. |
| 3 (Source) | Power return / reference | Serves as source terminal and local ground reference for gate driver; tied to power ground in low-side configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in fast recovery diode | Enables self-contained freewheeling in flyback and half-bridge circuits without external diode, reducing BOM count and layout area. |
| Low RDS(on) at 10 V VGS | Minimizes conduction loss in 12–24 V gate-driven systems; eliminates need for gate boosters in many industrial SMPS designs. |
| Isolated heatsink tab | Permits direct mounting to grounded heatsinks without insulating hardware, simplifying thermal design and improving long-term reliability. |
| Controlled Qgd/Qgs ratio | Reduces risk of spurious turn-on during high dV/dt switching events in high-frequency bridge applications. |
Applications
| AC/DC SMPS Primary Switch | Motor Drive Inverter Leg |
|---|---|
Use Scenario: High-efficiency 100–500 W offline flyback or forward converter operating from universal AC input. IC Role / Device Role / Timing Role: Main high-side switching element handling 480 V DC bus, performing PWM-controlled energy transfer. Use Value: Low RDS(on) and fast trr reduce total switching + conduction losses; isolated tab simplifies heatsinking in compact enclosures. | Use Scenario: Upper or lower switch in 3-phase inverter driving 1–3 kW induction or BLDC motors. IC Role / Device Role / Timing Role: Power stage switching device in hard-switched inverter leg; body diode handles reactive current commutation. Use Value: Avalanche-rated operation withstands inductive kickback; 180 ns trr limits cross-conduction loss during dead-time transitions. |
| UPS Inverter Output Stage | Industrial DC-DC Isolated Converter |
Use Scenario: 1 kVA online UPS delivering clean sine-wave output using full-bridge inverter topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; conducts bidirectional current during waveform synthesis. Use Value: Robust SOA supports repetitive short-circuit pulses; low leakage ensures standby efficiency compliance. | Use Scenario: 48 V input, 12 V output isolated DC-DC module for telecom or factory automation control rails. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or active-clamp forward converter. Use Value: 38 nC Qg enables efficient 100–300 kHz operation with standard gate drivers; TO-220FN package allows manual rework in medium-volume production. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 0.75 Ω RDS(on), 32 nC Qg, TO-220FP package (non-isolated tab) | Lacks isolated heatsink tab; requires insulator kit for grounded heatsinks; slightly higher RDS(on) | Prefer when cost sensitivity outweighs thermal mounting simplicity and board space permits insulator use. |
| IXTH12N60L2 | 600 V, 0.65 Ω RDS(on), 42 nC Qg, TO-247 package (larger footprint, higher thermal mass) | Higher gate charge increases driver loss; TO-247 offers better thermal performance but larger PCB area | Select when >30 W continuous dissipation is required and layout accommodates larger outline. |
Compared with STP6NK60ZFP and IXTH12N60L2, the RJL6013DPP-00#T2 uniquely combines TO-220FN's isolated tab, 0.66 Ω RDS(on), and 180 ns body diode recovery-making it optimal for space-constrained, thermally demanding 480 V bus applications where mechanical mounting simplicity and EMI control are critical.
Availability
RJL6013DPP-00#T2 is available at Aetrix Electronics and suitable for AC/DC SMPS primary switches, motor drive inverter legs, and UPS inverter output stages requiring stable component supply, traceable sourcing, and lifecycle continuity.
Supply support for RJL6013DPP-00#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJL6013DPP-00#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in industrial power conversion systems operating up to 600 V.
FAQ
What is the maximum continuous drain current rating for RJL6013DPP-00#T2?
The RJL6013DPP-00#T2 has a continuous drain current rating of 11 A at Tc = 25°C, limited by its maximum channel dissipation of 30 W and thermal impedance of 4.17 °C/W. At elevated case temperatures, derating applies per the SOA curve on page 3 of the datasheet.
Does RJL6013DPP-00#T2 have an electrically isolated heatsink tab?
Yes, the RJL6013DPP-00#T2 uses the TO-220FN package (RENESAS code PRSS0003AB-A), which features an electrically isolated metal tab. This allows direct mounting to a grounded heatsink without thermal pads or insulators, simplifying mechanical design and improving thermal reliability.
What is the typical gate-to-source threshold voltage range for RJL6013DPP-00#T2?
The gate-to-source cutoff voltage (VGS(off)) for RJL6013DPP-00#T2 is specified from 2.0 V to 4.0 V at VDS = 10 V and ID = 1 mA. This range ensures robust turn-on with standard 10 V gate drivers while maintaining low off-state leakage.
Can RJL6013DPP-00#T2 be used in avalanche mode, and what is its rated avalanche energy?
Yes, the RJL6013DPP-00#T2 is rated for unclamped inductive switching with an avalanche energy (EAR) of 0.87 mJ under specified test conditions (Tch = 25°C, IAP = 4 A). This capability supports reliable operation in circuits with inductive loads and transient overvoltage events.
What is the reverse recovery time of the body diode in RJL6013DPP-00#T2?
The body-drain diode reverse recovery time (trr) of RJL6013DPP-00#T2 is 180 ns under test conditions of IF = 11 A, VGS = 0, and diF/dt = 100 A/µs. This fast recovery minimizes switching losses and voltage overshoot during commutation in bridge configurations.
RJL6013DPP-00#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJL6013DPP-00#T2 FAQ
1.How can I place an order for RJL6013DPP-00#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJL6013DPP-00#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJL6013DPP-00#T2 reliable?
The price and inventory of RJL6013DPP-00#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJL6013DPP-00#T2 is usually 5 days.
3.What payment methods are accepted for RJL6013DPP-00#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJL6013DPP-00#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJL6013DPP-00#T2?
RJL6013DPP-00#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJL6013DPP-00#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJL6013DPP-00#T2?
For technical support, including RJL6013DPP-00#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJL6013DPP-00#T2 requirements.
6.How does Aetrix verify that RJL6013DPP-00#T2 is sourced from the original manufacturer or authorized distributors?
All RJL6013DPP-00#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJL6013DPP-00#T2 meets industry standards.
7.What is the process for return or replacement of RJL6013DPP-00#T2?
All RJL6013DPP-00#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJL6013DPP-00#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJL6013DPP-00#T2 part is unused and in its original packaging.
Return procedure for RJL6013DPP-00#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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