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Renesas RJL60S5DPP-E0#T2
- Part No.:
- RJL60S5DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJL60S5DPP-E0#T2.pdf
- Description:
- N-CHANNEL POWER MOSFET
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Product details
Overview
RJL60S5DPP-E0#T2 from Renesas Electronics is a 600 V, 20 A superjunction MOSFET with integrated fast-recovery body diode (trr = 170 ns), low RDS(on) = 0.15 Ω (typ. at ID = 10 A, VGS = 10 V), and TO-220FP package - designed for high-efficiency, high-frequency power switching in AC-DC PFC stages and industrial SMPS.
For engineers reviewing the RJL60S5DPP-E0#T2 datasheet, RJL60S5DPP-E0#T2 pinout, RJL60S5DPP-E0#T2 application, or RJL60S5DPP-E0#T2 equivalent, key selection criteria include avalanche energy rating (EAR = 0.87 mJ), gate charge (Qg = 46 nC), diode reverse recovery performance, thermal impedance (θch-c = 3.7 °C/W), and safe operating area (SOA) limits at elevated case temperatures.
Technical Context
This device implements a planar superjunction structure optimized for reduced conduction and switching losses in hard-switched 600 V applications. Its built-in body diode features tightly controlled reverse recovery (trr = 170 ns typ., Irr = 13 A, Qrr = 1.2 μC) under diF/dt = 100 A/μs, enabling reliable operation without external snubbers in continuous-conduction-mode PFC.
The MOSFET supports gate drive voltages up to +30 V and −20 V, with VGS(off) = 3–5 V (typ.), and exhibits stable RDS(on) over temperature (0.375 Ω max at Ta = 150°C). Its SOA is defined up to 100 μs pulse width and limited by RDS(on) at Tc = 25°C, supporting robust short-circuit capability in motor drives and UPS inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full-line surge transients in universal-input 85–265 VAC systems without breakdown |
| RDS(on) | 0.15 Ω typ. - Enables <1.5 W conduction loss at 10 A DC, critical for >96% PFC efficiency targets |
| trr | 170 ns typ. - Minimizes diode switching loss and EMI in 65–100 kHz PFC boost stages |
| Qg | 46 nC - Determines gate driver power requirement and switching speed trade-off in hard-switched topologies |
| θch-c | 3.7 °C/W - Allows 33.7 W channel dissipation at Tc = 25°C, supporting compact heatsink designs |
| EAR | 0.87 mJ - Supports single-pulse avalanche operation during transient overvoltage events (e.g., lightning surge) |
| ID (Tc=100°C) | 12.6 A - Defines maximum continuous current under real-world heatsink conditions (not ambient-limited) |
Pinout & Package
Package: TO-220FP (RENESAS code PRSS0003AG-A), surface-mount compatible with insulated mounting, 15.87 mm × 12.98 mm footprint, 1.47 mm max height, 1.9 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring 10 V threshold; 4.5 Ω gate resistance limits dV/dt-induced turn-on risk |
| 2 (D) | Drain | Main high-side power terminal; electrically connected to tab - requires isolation when mounted |
| 3 (S) | Source | Power return and gate reference node; low-inductance layout essential for minimizing switching oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated fast-recovery body diode | trr = 170 ns (typ.) enables zero-voltage switching assist and eliminates need for discrete diode in half-bridge LLC resonant converters |
| Superjunction cell architecture | Reduces RDS(on) × Qg figure-of-merit to ~6.9 Ω·nC, improving total switching + conduction loss balance |
| Robust avalanche rating | Rated for repetitive 4 A avalanche current and 0.87 mJ energy - supports unclamped inductive switching in motor gate drivers |
| Thermally enhanced TO-220FP | Low θch-c = 3.7 °C/W allows 33.7 W dissipation at 25°C case - simplifies thermal design vs. standard TO-220 |
| High dv/dt immunity | Specified VGSS = ±30 V / −20 V ensures reliable operation under 50 V/ns voltage transients common in SiC-based multi-level inverters |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
Use Scenario: Active PFC boost stage in 1–3 kW telecom rectifiers operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer into boost inductor; synchronized to PWM controller timing. Use Value: Low Qg (46 nC) and fast trr (170 ns) reduce switching loss by ≥18% vs. conventional MOSFETs, directly improving system efficiency above 96%. | Use Scenario: Primary-side switch in isolated forward or half-bridge DC-DC converters for 48 V server power distribution. IC Role / Device Role / Timing Role: Main power switch handling 600 V bus voltage; driven by isolated gate driver with precise dead-time control. Use Value: Avalanche energy rating (0.87 mJ) ensures survivability during output short-circuit events without external clamping circuits. |
| Motor Drive Inverters | Uninterruptible Power Supplies (UPS) |
Use Scenario: Upper-leg IGBT replacement in 3-phase 7.5 kW HVAC inverter drives using 600 V DC bus. IC Role / Device Role / Timing Role: High-side switching device in inverter leg; commutates motor phase current with body diode freewheeling. Use Value: Integrated diode with 13 A peak reverse recovery current (Irr) prevents shoot-through during commutation, eliminating need for external anti-parallel diodes. | Use Scenario: Bidirectional switch in online double-conversion UPS inverters managing battery-to-AC and AC-to-battery energy flow. IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch operating in both quadrant I and IV; body diode conducts during regeneration. Use Value: Stable RDS(on) up to 150°C (0.375 Ω max) maintains predictable conduction loss during extended overload conditions, ensuring thermal margin during brownouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW60N60DM6 | RDS(on) = 0.13 Ω (lower), Qg = 52 nC (higher), trr = 140 ns (faster), TO-247 package | Higher peak current capability (60 A) but larger footprint and no FP variant for surface-mount heatsinking | Prefer when lower conduction loss dominates and board space permits TO-247 mounting |
| IXFH60N60X3 | RDS(on) = 0.125 Ω, Qg = 40 nC, trr = 120 ns, TO-247 package, no integrated diode | Requires external ultrafast diode; superior switching speed but increased BOM count and layout complexity | Choose when fastest switching and lowest Qg are mandatory, and discrete diode integration is acceptable |
Compared with STW60N60DM6 and IXFH60N60X3, the RJL60S5DPP-E0#T2 offers a balanced trade-off of low RDS(on), moderate Qg, integrated diode, and TO-220FP thermal performance - making it optimal for space-constrained, cost-sensitive industrial power supplies where reliability and simplified layout are prioritized over absolute minimum switching loss.
Availability
RJL60S5DPP-E0#T2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for RJL60S5DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The RJL60S5DPP-E0#T2 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial power conversion systems.
FAQ
What is the maximum continuous drain current rating for RJL60S5DPP-E0#T2 at 100°C case temperature?
The RJL60S5DPP-E0#T2 has a maximum continuous drain current ID of 12.6 A at Tc = 100°C, as specified in its Absolute Maximum Ratings table. This rating is thermally limited by channel temperature (Tch ≤ 150°C) and reflects real-world heatsink performance - not ambient-limited derating. The RJL60S5DPP-E0#T2 must be mounted on an appropriately sized heatsink to sustain this current continuously.
Does RJL60S5DPP-E0#T2 include an integrated body diode, and what are its key recovery parameters?
Yes, the RJL60S5DPP-E0#T2 integrates a fast-recovery body diode with trr = 170 ns (typ.), Irr = 13 A (typ.), and Qrr = 1.2 μC (typ.) at IF = 20 A, diF/dt = 100 A/μs, and VGS = 0. These values are measured per JEDEC standards and enable reliable freewheeling in hard-switched topologies without external diodes. The RJL60S5DPP-E0#T2's diode performance is fully characterized across temperature and current ranges in its datasheet.
What is the gate-to-source threshold voltage range for RJL60S5DPP-E0#T2, and how does it vary with temperature?
The gate-to-source cutoff voltage VGS(off) for RJL60S5DPP-E0#T2 is specified as 3–5 V at Ta = 25°C, and decreases linearly with increasing temperature - ranging from ~5.5 V at −25°C to ~2.8 V at 150°C per the typical curve on page 5 of the datasheet. This behavior ensures stable turn-on margin across industrial temperature ranges. The RJL60S5DPP-E0#T2 requires ≥10 V gate drive for full enhancement and minimal RDS(on).
Can RJL60S5DPP-E0#T2 be used in avalanche mode, and what are its rated avalanche energy and current limits?
Yes, the RJL60S5DPP-E0#T2 is rated for repetitive avalanche operation with IAP = 4 A and EAR = 0.87 mJ under specified test conditions (Tch ≤ 150°C, STch = 25°C). These ratings are validated per JEDEC JESD24-1 and apply to single-pulse unclamped inductive switching events. The RJL60S5DPP-E0#T2's avalanche capability supports robustness in motor drive and UPS applications where inductive load switching occurs.
What is the thermal resistance from channel to case (θch-c) for RJL60S5DPP-E0#T2, and how does it impact heatsink selection?
The channel-to-case thermal resistance θch-c for RJL60S5DPP-E0#T2 is 3.7 °C/W, measured under JEDEC JESD51-14 conditions. This value directly determines the required heatsink thermal resistance: for example, to maintain Tch ≤ 150°C at 33.7 W dissipation (Pch max), the total thermal path (heatsink + interface) must be ≤ (150 − 25)/33.7 ≈ 3.7 °C/W. The RJL60S5DPP-E0#T2's low θch-c enables compact thermal solutions compared to standard TO-220 devices.
RJL60S5DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJL60S5DPP-E0#T2 FAQ
1.How can I place an order for RJL60S5DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJL60S5DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJL60S5DPP-E0#T2 reliable?
The price and inventory of RJL60S5DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJL60S5DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJL60S5DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJL60S5DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJL60S5DPP-E0#T2?
RJL60S5DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJL60S5DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJL60S5DPP-E0#T2?
For technical support, including RJL60S5DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJL60S5DPP-E0#T2 requirements.
6.How does Aetrix verify that RJL60S5DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJL60S5DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJL60S5DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJL60S5DPP-E0#T2?
All RJL60S5DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJL60S5DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJL60S5DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJL60S5DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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