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Renesas RQJ0303PGDQA#H6
- Part No.:
- RQJ0303PGDQA#H6
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
RQJ0303PGDQA#H6.pdf
- Description:
- MOSFET P-CH 30V 3.3A 3MPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,321
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Product details
Overview
RQJ0303PGDQA#H6 from Renesas Electronics is a silicon P-channel MOSFET designed for low-voltage power switching in compact DC-DC converters and load-switching circuits. It delivers 54 mΩ typical RDS(on) at VGS = –10 V and –1.6 A, supports 4.5 V gate drive, and features integrated body diode with –0.9 V forward voltage at –1.5 A - enabling efficient high-side switching in battery-powered industrial sensors and USB port protection.
For engineers reviewing the RQJ0303PGDQA#H6 datasheet, RQJ0303PGDQA#H6 pinout, RQJ0303PGDQA#H6 application, or RQJ0303PGDQA#H6 equivalent, key selection criteria include its –30 V VDSS, 0.8 W channel dissipation on FR-4 board, –2.0 V maximum VGS(off), 12 nC total gate charge, and MPAK (SC-59A) package compatibility with space-constrained PCB layouts.
Technical Context
This P-channel MOSFET operates as a single high-side power switch with depletion-mode gate control logic: turn-on occurs at negative gate-to-source bias, and full enhancement requires VGS ≤ –2.0 V. Its low 76 mΩ RDS(on) at –4.5 V enables direct microcontroller GPIO driving without level-shifting circuitry.
The device integrates a body diode rated for –3.3 A continuous reverse current and exhibits 625 pF input capacitance (Ciss) and 111 pF output capacitance (Coss) at VDS = –10 V, supporting fast switching with 18 ns turn-on delay and 5.7 ns fall time under standard test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –30 V - maximum blocking voltage for 24 V rail protection and automotive body electronics |
| RDS(on) @ –10 V | 54 mΩ typ - enables <100 mW conduction loss at –1.6 A in thermally constrained layouts |
| RDS(on) @ –4.5 V | 76 mΩ typ - supports direct 3.3 V/5 V MCU gate drive without external level shifter |
| Qg | 12 nC - determines gate driver current requirement (~2.5 mA avg for 1 MHz switching) |
| Ciss | 625 pF - sets input impedance and influences EMI filtering requirements in high-frequency SMPS |
| VGS(off) | –1.0 to –2.0 V - defines minimum negative bias needed for reliable turn-off in noisy environments |
| Pch | 0.8 W - thermal limit on standard FR-4 (40 × 40 × 1 mm), requiring derating above 75°C case temperature |
Pinout & Package
Package: MPAK (SC-59A), JEITA code SC-59A, Renesas package code PLSP0003ZB-A - surface-mount, 3-pin, lead-free, 2.7 mm × 1.35 mm footprint with 0.95 mm height and 0.011 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal | Common reference node for gate control; connects to positive rail in high-side switch configuration |
| 2 (Gate) | Gate terminal | Control input requiring negative bias relative to source; driven by MCU GPIO or dedicated gate driver |
| 3 (Drain) | Drain terminal | Switched output node; connects to load; body diode anode is internally tied to source |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 76 mΩ max enables direct 3.3 V logic-level control without auxiliary circuitry |
| Fast switching speed | 18 ns td(on) and 5.7 ns tf support >1 MHz DC-DC operation with minimal dead-time loss |
| Integrated body diode | VDF = –0.9 V at –1.5 A allows bidirectional current handling in H-bridge half-cells |
| Thermal robustness | 150°C channel temperature rating permits operation in sealed enclosures up to 85°C ambient |
| Small-outline packaging | MPAK footprint saves >40% board area vs. SO-8 while maintaining 0.8 W power capability |
Applications
| USB Port Power Switching | Industrial Sensor Supply Control |
|---|---|
Use Scenario: Selective enable/disable of USB VBUS to peripheral devices in embedded host controllers. IC Role / Device Role / Timing Role: High-side load switch controlling 5 V supply path with fast fault response. Use Value: 54 mΩ RDS(on) limits voltage drop to <85 mV at 1.6 A, preserving USB 2.0 compliance margins. |
Use Scenario: Power gating of analog sensor front-ends in battery-operated condition monitoring nodes. IC Role / Device Role / Timing Role: Low-quiescent-current power switch isolating sensor supply during sleep mode. Use Value: IGSS ≤ ±10 μA ensures <1 μA leakage into powered-down sensor rails, extending battery life. |
| Automotive Body Control Module | Compact DC-DC Converter High-Side Switch |
Use Scenario: Driving LED lighting loads in 12 V vehicle subsystems with PWM dimming. IC Role / Device Role / Timing Role: High-side switch in constant-current LED driver with reverse-polarity protection. Use Value: –30 V VDSS withstands load-dump transients up to ISO 7637-2 Pulse 5a (–120 V peak). |
Use Scenario: Synchronous rectifier or high-side switch in 3.3 V/5 V buck converter outputs. IC Role / Device Role / Timing Role: Power FET in non-isolated step-down regulator with 12 nC Qg enabling efficient 2 MHz operation. Use Value: Coss = 111 pF minimizes switching loss during hard-commutation transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ –4.5 V; 800 pF Ciss; SOT-23 package | Higher conduction loss and slower switching; suitable only for <500 kHz, low-current (<0.8 A) loads | Choose when cost sensitivity outweighs efficiency and board space constraints |
| AO3401 | RDS(on) = 85 mΩ @ –4.5 V; 1050 pF Ciss; same SC-59A footprint | Higher gate charge (20 nC) increases driver losses; lower VDSS (–30 V same) but reduced thermal margin (0.625 W) | Acceptable for identical layout reuse where 0.8 W dissipation headroom is not required |
Compared with Si2301DDS-T1-GE3 and AO3401, RQJ0303PGDQA#H6 offers the lowest RDS(on) at 4.5 V and smallest Ciss among SC-59A P-channel MOSFETs, delivering superior efficiency in high-frequency, space-limited power switches.
Availability
RQJ0303PGDQA#H6 is available at Aetrix Electronics and suitable for USB power management, industrial sensor supply control, and automotive body electronics requiring stable component supply and RoHS-compliant sourcing.
Supply support for RQJ0303PGDQA#H6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
RQJ0303PGDQA#H6 belongs to Renesas' MPAK-series low-voltage P-channel MOSFET product line, engineered for high-efficiency, space-constrained power switching in battery-powered and automotive systems.
FAQ
What is the maximum continuous drain current rating for RQJ0303PGDQA#H6?
The RQJ0303PGDQA#H6 has a continuous drain current (ID) rating of –3.3 A at Ta = 25°C on a glass-epoxy FR-4 board (40 × 40 × 1 mm). This rating assumes proper PCB copper pour and thermal relief; actual usable current must be derated per the maximum channel dissipation curve shown on page 3 of the R07DS0295EJ0600 datasheet, especially above 75°C case temperature.
Can RQJ0303PGDQA#H6 be driven directly by a 3.3 V microcontroller GPIO?
Yes - RQJ0303PGDQA#H6 is specified for 4.5 V gate drive and exhibits 76 mΩ typical RDS(on) at VGS = –4.5 V. When the microcontroller GPIO pulls the gate to 0 V while the source is at 3.3 V, VGS = –3.3 V is achieved, which remains within the functional range (VGS(off) = –1.0 to –2.0 V), though RDS(on) will rise to ~107 mΩ max. For optimal performance, use a dedicated gate driver or level shifter to reach –4.5 V or lower.
Does RQJ0303PGDQA#H6 include an integrated body diode, and what are its characteristics?
Yes, RQJ0303PGDQA#H6 includes an integrated body diode with forward voltage (VDF) of –0.9 V typical at IF = –1.5 A and VGS = 0 V. The diode is rated for –3.3 A continuous reverse drain current (IDR) and supports bidirectional current flow in half-bridge or reverse-polarity protection configurations, as confirmed in the Absolute Maximum Ratings table on page 1 of the R07DS0295EJ0600 datasheet.
What is the package type and footprint compatibility of RQJ0303PGDQA#H6?
RQJ0303PGDQA#H6 uses the MPAK package (JEITA code SC-59A, Renesas code PLSP0003ZB-A), a 3-pin surface-mount outline measuring 2.7 mm × 1.35 mm with 0.95 mm height. It is pin-compatible with other SC-59A devices such as AO3401 and Si2301, enabling drop-in replacement in existing layouts - provided thermal and electrical validation confirms suitability for the target application's current and switching frequency.
What is the total gate charge (Qg) specification for RQJ0303PGDQA#H6, and how does it impact driver selection?
RQJ0303PGDQA#H6 has a total gate charge (Qg) of 12 nC typical at VDD = –10 V, VGS = –10 V, and ID = –3.3 A. This value determines the peak and average current required from the gate driver: for 1 MHz switching with 50% duty cycle, average gate current is ~6 mA. Drivers with ≥100 mA peak output (e.g., TC4427, MIC4423) ensure fast edge rates and minimize switching losses in high-frequency applications using RQJ0303PGDQA#H6.
RQJ0303PGDQA#H6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 68mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 625 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-MPAK
RQJ0303PGDQA#H6 FAQ
1.How can I place an order for RQJ0303PGDQA#H6 through Aetrix?
Please submit a Request for Quotation (RFQ) for RQJ0303PGDQA#H6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RQJ0303PGDQA#H6 reliable?
The price and inventory of RQJ0303PGDQA#H6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RQJ0303PGDQA#H6 is usually 5 days.
3.What payment methods are accepted for RQJ0303PGDQA#H6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RQJ0303PGDQA#H6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RQJ0303PGDQA#H6?
RQJ0303PGDQA#H6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RQJ0303PGDQA#H6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RQJ0303PGDQA#H6?
For technical support, including RQJ0303PGDQA#H6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RQJ0303PGDQA#H6 requirements.
6.How does Aetrix verify that RQJ0303PGDQA#H6 is sourced from the original manufacturer or authorized distributors?
All RQJ0303PGDQA#H6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RQJ0303PGDQA#H6 meets industry standards.
7.What is the process for return or replacement of RQJ0303PGDQA#H6?
All RQJ0303PGDQA#H6 units undergo pre-shipment inspection (PSI). If there is an issue with RQJ0303PGDQA#H6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RQJ0303PGDQA#H6 part is unused and in its original packaging.
Return procedure for RQJ0303PGDQA#H6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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