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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT011H75G3AG

Name: SCT011H75G3AG
Brand: STMicroelectronics
SKU: SCT011H75G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT011H75G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT011H75G3AG.pdf

Description:: MOSFET 750 V 110A H2PAK7

Quantity:: RFQ Add To RFQ list

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Inventory:4,861

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Product details

Overview

SCT011H75G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide N-channel Power MOSFET in H²PAK-7 package, rated for 750 V drain-source voltage, 11.4 mΩ typical R_DS(on) at 18 V_GS, and 110 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency switching device in high-voltage traction inverters and on-board chargers for electric vehicles.

For engineers reviewing the SCT011H75G3AG datasheet, SCT011H75G3AG pinout, SCT011H75G3AG application, or SCT011H75G3AG equivalent, key selection criteria include its low R_DS(on) over temperature (16.3 mΩ at 175 °C), fast switching energy (137 µJ E_on, 241 µJ E_off), robust intrinsic body diode (t_rr = 25 ns), and source-sensing configuration enabling precise gate drive control.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology, delivering stable threshold voltage (1.8–4.2 V) and normalized R_DS(on) variation across -75 °C to 175 °C. Its low C_iss (3831 pF), C_oss (317 pF), and C_rss (33.6 pF) enable high-frequency operation with minimal switching loss.

The device integrates a dedicated driver source (pin 2) separate from power source (pins 3–7), supporting Kelvin-source gate drive to eliminate source inductance effects during high-di/dt switching. Its intrinsic body diode exhibits low V_SD (2.5 V at 50 A) and controlled reverse recovery (Q_rr = 235 nC, I_RRM = 14 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	750 V - Maximum blocking voltage for 800 V DC-link systems in EV traction inverters
R_DS(on) typ.	11.4 mΩ at V_GS = 18 V, I_D = 80 A - Enables <1.5 W conduction loss at 110 A, reducing heatsink requirements
I_D cont.	110 A at T_C = 25 °C - Sustains full-rated current under forced-air cooling in OBC and DC/DC converters
E_on/E_off	137 µJ / 241 µJ at V_DD = 400 V, I_D = 50 A, R_G = 6.8 Ω - Supports >50 kHz switching with <0.4 W total switching loss per cycle
t_r/t_f	11 ns / 21 ns - Minimizes overlap loss in hard-switched topologies without requiring complex snubbers
Q_g	144 nC - Compatible with standard 2–4 A gate drivers; Qgs/Qgd ratio (47/43 nC) supports clean turn-on/turn-off control
R_thJC	0.23 °C/W - Enables direct mounting to cold plates for thermal management in automotive-grade power modules

Pinout & Package

H²PAK-7 package: 7-terminal surface-mount power package with isolated copper tab (Drain), optimized for high-current, high-thermal-conductivity PCB layouts. Features integrated source sensing and dual-source configuration for precision gate drive.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain connection	Exposed copper thermal pad serving as primary heat path to PCB; electrically tied to drain potential
1 (Gate)	Control input	Standard gate terminal accepting ±10 V to +22 V drive; transient rating up to +25 V for ESD robustness
2 (Driver Source)	Kelvin source reference	Provides low-inductance return path for gate driver, eliminating source inductance impact on switching waveform fidelity
3–7 (Power Source)	Main current return path	Parallel-source terminals carrying full 110 A load current; designed for low-resistance PCB copper pour routing

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including 15-year lifetime under thermal cycling (-40 °C to 175 °C)
Source sensing pin	Enables true Kelvin-source gate drive, maintaining accurate V_GS control despite PCB trace inductance up to 10 nH
Low R_DS(on) tempco	Normalized R_DS(on) increases only ~1.6× from 25 °C to 175 °C - ensures stable conduction loss in high-temp environments
Robust intrinsic body diode	25 ns t_rr, 235 nC Q_rr, and soft recovery behavior reduce voltage overshoot and EMI in bidirectional switching
High-speed switching	24 ns t_d(on), 52 ns t_d(off) - enables precise dead-time control in three-phase inverter PWM schemes

Applications

Electric Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power motor drive stage in battery electric vehicle (BEV) main inverter, operating at 400–800 V DC bus and switching frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Primary high-side/low-side switching element in 6-pack topology, handling peak phase currents >300 A with bidirectional conduction capability.

Use Value: Low R_DS(on) and fast switching reduce conduction + switching losses by >18% vs. comparable Si IGBTs, extending driving range by ~3% at WLTP cycle.

Use Scenario: Active rectification and isolation stage in 11 kW bi-directional OBC, converting AC grid to HV battery and vice versa.

IC Role / Device Role / Timing Role: Switching device in totem-pole PFC and DC/DC LLC resonant converter stages, operating in ZVS/ZCS conditions.

Use Value: 25 ns body diode t_rr and low Q_rr enable zero-current switching in critical conduction mode, achieving >96.5% peak efficiency.

DC/DC Converter (EV)

Industrial Motor Drive

Use Scenario: 400 V–12 V isolated DC/DC converter supplying auxiliary power to vehicle ECUs, ADAS sensors, and infotainment systems.

IC Role / Device Role / Timing Role: Primary switch in high-frequency phase-shifted full-bridge topology, operating at 100–300 kHz with synchronous rectification.

Use Value: 0.23 °C/W R_thJC allows direct cold-plate mounting, sustaining 110 A continuous current without derating at 100 °C case temperature.

Use Scenario: High-reliability industrial servo drive for robotics and CNC machinery, requiring 750 V blocking and 100 k-cycle lifetime under partial-load cycling.

IC Role / Device Role / Timing Role: Output stage switch in modular multi-level inverter (MLI), leveraging low capacitance for reduced dv/dt stress on motor windings.

Use Value: Stable V_GS(th) (1.8–4.2 V) and low C_rss (33.6 pF) suppress false turn-on during high dv/dt commutation, eliminating need for negative gate bias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065090D	900 V rating, 6.5 mΩ R_DS(on), TO-247-4L package, no dedicated driver source pin	Higher voltage margin but larger footprint and no Kelvin-source option; requires external source inductance compensation	Select when system requires >800 V DC-link headroom and board space permits TO-247 mounting
ROHM SCT3105KL	650 V rating, 10.5 mΩ R_DS(on), TO-263-7 package, includes source sense pin, lower Q_g (110 nC)	Limited to 650 V systems; better gate drive efficiency but insufficient for 800 V BEV architectures	Select for 400 V OBC or industrial UPS where lower gate charge reduces driver cost and improves light-load efficiency

Compared with C3M0065090D and SCT3105KL, SCT011H75G3AG uniquely balances 750 V rating, Kelvin-source capability, and automotive qualification-making it optimal for space-constrained, thermally demanding 800 V traction inverters where gate drive fidelity and long-term reliability are non-negotiable.

Availability

SCT011H75G3AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-efficiency DC/DC converters requiring stable component supply, AEC-Q101 compliance, and high-temperature operational continuity.

Supply support for SCT011H75G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density automotive and industrial power conversion systems operating above 400 V.

FAQ

What is the maximum recommended gate drive voltage for SCT011H75G3AG?

The absolute maximum gate-source voltage is -11 V to +25 V for transients ≤1 µs, but the recommended operating range is -5 V to +18 V. Driving at +18 V ensures full enhancement while maintaining safe margin below the 22 V absolute max rating. Exceeding +18 V risks accelerated gate oxide degradation over lifetime, especially at elevated junction temperatures.

Does SCT011H75G3AG require negative gate voltage for reliable turn-off?

No. The device achieves robust turn-off with 0 V gate drive due to its positive V_GS(th) (1.8–4.2 V) and low C_rss (33.6 pF), which minimizes Miller-induced false turn-on. However, -5 V is recommended during off-state to increase noise immunity in high-dv/dt environments such as traction inverters with >50 V/ns slew rates.

How is the source sensing pin (pin 2) implemented in PCB layout?

Pin 2 must be routed separately from pins 3–7 using a narrow, low-inductance trace directly to the gate driver IC's source reference node. It should not share copper pours or vias with power source paths. ST recommends keeping this trace <5 mm long and avoiding parallel runs near high-di/dt nodes to prevent coupling-induced gate disturbance.

Can SCT011H75G3AG replace silicon IGBTs in existing 750 V inverter designs?

Yes, but gate drive and layout must be updated: SiC requires lower gate resistance (6.8 Ω typical vs. 15–30 Ω for IGBTs), Kelvin-source routing, and tighter control of parasitic inductance. The H²PAK-7 footprint differs from standard TO-247, so mechanical redesign is required. Thermal interface must also accommodate higher power density and lower R_thJC.

SCT011H75G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Cut Tape (CT)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT011H75G3AG FAQ

1.How can I place an order for SCT011H75G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT011H75G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT011H75G3AG reliable?

The price and inventory of SCT011H75G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT011H75G3AG is usually 5 days.

3.What payment methods are accepted for SCT011H75G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT011H75G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT011H75G3AG?

SCT011H75G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT011H75G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT011H75G3AG?

For technical support, including SCT011H75G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT011H75G3AG requirements.

6.How does Aetrix verify that SCT011H75G3AG is sourced from the original manufacturer or authorized distributors?

All SCT011H75G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT011H75G3AG meets industry standards.

7.What is the process for return or replacement of SCT011H75G3AG?

All SCT011H75G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT011H75G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT011H75G3AG part is unused and in its original packaging.

Return procedure for SCT011H75G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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