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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT015W120G3-4AG

Name: SCT015W120G3-4AG
Brand: STMicroelectronics
SKU: SCT015W120G3-4AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT015W120G3-4AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: SCT015W120G3-4AG.pdf

Description:: TO247-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT015W120G3-4AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide Power MOSFET with 1200 V drain-source voltage, 15 mΩ typical R_DS(on) at 18 V_GS, and 129 A continuous drain current at T_C = 25 °C. It features a source-sensing pin, 200 °C maximum junction temperature, and ultra-low gate charge (167 nC), enabling high-frequency, high-efficiency operation in electric vehicle traction inverters.

For engineers reviewing the SCT015W120G3-4AG datasheet, SCT015W120G3-4AG pinout, SCT015W120G3-4AG application, or SCT015W120G3-4AG equivalent, key selection criteria include its HiP247-4 package with Kelvin source, 800 V switching energy performance (E_on/E_off ≈ 844/835 µJ), robust body diode (t_rr = 23 ns), and thermal resistance of 0.26 °C/W (junction-to-case).

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology to achieve stable R_DS(on) across -55 °C to 200 °C and low capacitance (C_iss = 3512 pF, C_oss = 183 pF) for minimal switching loss. Its integrated Kelvin source connection enables precise gate drive and reduces dynamic losses during hard-switching.

The device supports unidirectional power flow with a fast intrinsic body diode (V_SD = 3.6 V at 60 A, Q_rr = 250 nC), and operates reliably under repetitive 1200 V blocking with V_(BR)DSS ≥ 1200 V and I_DSS ≤ 10 µA at full rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables direct use in 800 V EV battery systems with >50% voltage margin for transients.
R_DS(on) typ.	15 mΩ at V_GS = 18 V, I_D = 60 A - Delivers <1.2 W conduction loss at 100 A, critical for inverter efficiency.
I_D cont.	129 A at T_C = 25 °C - Supports high-power motor drives without parallel devices in compact layouts.
Q_g	167 nC - Reduces gate driver power demand and enables >100 kHz switching with low EMI.
T_J max	200 °C - Allows derating-free operation in under-hood environments with minimal heatsink volume.
t_rr	23 ns - Minimizes reverse recovery loss and commutation stress in bidirectional DC/DC converters.
R_thJC	0.26 °C/W - Enables high-power density thermal design with direct baseplate mounting.

Pinout & Package

Package: HiP247-4 - 4-terminal high-power package with isolated Kelvin source pin for accurate gate control and reduced Miller effect.

Pin/Terminal	Circuit Role	Design Meaning
Drain (1, TAB)	Main power drain connection	Large metal tab provides low-inductance, high-current path and primary thermal interface to heatsink.
Gate (4)	Control input	Standard gate terminal; driven with ±5 V to +18 V logic; low C_iss enables fast edge rates.
Driver source (3)	Kelvin source sense	Provides dedicated return path for gate driver, eliminating source inductance impact on switching stability.
Power source (2)	Main source current return	Carries full load current; separate from Driver source to decouple power and control loops.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability including HTGB, HTRB, and UHAST, supporting ASIL-C system integration.
Source sensing pin	Enables true Kelvin gate drive, reducing effective gate resistance and suppressing oscillation during dV/dt transitions.
200 °C operating junction temperature	Eliminates need for aggressive derating in OBC and inverter modules exposed to ambient >105 °C.
Ultra-low Q_gd/Q_gs ratio	59 nC / 45 nC = 1.31 - Improves Miller immunity and allows simpler gate driver design with lower RG dependency.
Robust body diode	t_rr = 23 ns, Q_rr = 250 nC, I_RRM = 19 A - Supports ZVS/ZCS soft-switching topologies without external anti-parallel SiC diodes.

Applications

Electric Traction Inverter

High-Voltage DC/DC Converter

Use Scenario: Main inverter stage converting 400–800 V battery power to 3-phase AC for permanent magnet synchronous motors in BEVs.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack topology; handles 100+ kHz PWM with <22 ns turn-on delay.

Use Value: 15 mΩ R_DS(on) and 0.26 °C/W R_thJC reduce conduction + switching losses by >18% vs. Gen 2 SiC MOSFETs, enabling smaller liquid-cooled stacks.

Use Scenario: Isolated bidirectional DC/DC stage stepping 400 V battery voltage to 12–48 V auxiliary bus in HEV/EV architectures.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; operates with zero-voltage switching using body diode reverse recovery.

Use Value: 23 ns t_rr and 250 nC Q_rr minimize dead-time loss and enable >98.2% peak efficiency at 10 kW output.

On-Board Charger (OBC)

Traction Motor Drive Module

Use Scenario: Active rectification and power factor correction stage in 11–22 kW bidirectional OBCs.

IC Role / Device Role / Timing Role: Boost switch in totem-pole PFC; switches at 70–150 kHz with 167 nC total gate charge.

Use Value: Low C_oss (183 pF) and high V_(BR)DSS (1200 V) allow reliable operation across universal AC input (90–265 VAC) with 1.5× safety margin.

Use Scenario: Integrated motor drive module for 48 V mild-hybrid starter-generator or 400 V e-axle applications.

IC Role / Device Role / Timing Role: Half-bridge leg in compact, encapsulated inverter; rated for 129 A continuous with 200 °C T_J capability.

Use Value: HiP247-4 package with dual-source pins enables PCB-level current sharing and eliminates wirebond fatigue failure modes in vibration-prone environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0015120K	R_DS(on) = 15 mΩ, but no Kelvin source; C_iss = 3600 pF; Q_g = 175 nC; same HiP247-4 package.	Lacks driver source pin → requires external gate loop optimization for high-dV/dt stability.	Select when cost sensitivity outweighs need for guaranteed gate drive robustness in production EV inverters.
ROHM SCT3105KL	R_DS(on) = 10.5 mΩ, but V_DS = 1200 V; Q_g = 145 nC; TO-247-4L package; not AEC-Q101 qualified.	Higher conduction efficiency but lacks automotive qualification and has higher thermal resistance (R_thJC = 0.35 °C/W).	Prefer for industrial UPS or solar inverters where qualification and thermal performance are secondary to R_DS(on).

Compared with C3M0015120K and SCT3105KL, SCT015W120G3-4AG uniquely combines AEC-Q101 compliance, Kelvin source architecture, and 0.26 °C/W thermal resistance-making it the only choice for production-grade traction inverters requiring both reliability and layout simplicity.

Availability

SCT015W120G3-4AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, high-voltage DC/DC converters, and on-board chargers requiring stable component supply, long-term automotive lifecycle support, and traceable lot-level documentation.

Supply support for SCT015W120G3-4AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with over 40 years of power device innovation and broad automotive qualification expertise.

This device belongs to ST's STPOWER SiC portfolio, engineered specifically for high-efficiency, high-reliability electrified transportation systems-including traction, charging, and auxiliary power conversion.

FAQ

What is the maximum recommended gate drive voltage for SCT015W120G3-4AG?

The absolute maximum gate-source voltage is -11 V to +25 V for transients <1 µs, but the recommended operating range is -5 V to +18 V. Driving above +18 V increases gate oxide stress and accelerates wear-out; below -5 V risks unintended turn-on due to Miller coupling. ST specifies +15 V as optimal for balancing R_DS(on) and reliability.

Does SCT015W120G3-4AG require a negative gate voltage for reliable turn-off?

Yes-ST recommends applying -5 V during turn-off to ensure robust immunity against parasitic turn-on in high-dV/dt environments. The device's V_GS(th) range (2.0–4.2 V) and low Q_gd/Q_gs ratio make it susceptible to Miller-induced conduction without active negative bias, especially in 6-pack inverter configurations.

How does the Kelvin source configuration affect PCB layout?

The Driver source (pin 3) must be routed separately from Power source (pin 2) back to the gate driver IC ground, forming a dedicated low-inductance Kelvin loop. This prevents source inductance from modulating V_GS during switching. ST mandates <2 nH loop inductance for optimal performance, requiring short, wide traces and local ground plane stitching.

Can SCT015W120G3-4AG replace silicon IGBTs in existing 1200 V inverters?

Yes-with gate driver and snubber redesign. Its faster switching (t_d(on) = 22 ns, t_f = 27 ns) demands lower gate resistance (<10 Ω) and tighter layout control. Unlike IGBTs, it lacks tail current, eliminating need for desaturation detection but requiring careful dead-time tuning to avoid shoot-through in hard-switched topologies.

SCT015W120G3-4AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 129A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 60A, 18V

Vgs(th) (Max) @ Id:: 4.2V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 3512 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 673W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

SCT015W120G3-4AG FAQ

1.How can I place an order for SCT015W120G3-4AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT015W120G3-4AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT015W120G3-4AG reliable?

The price and inventory of SCT015W120G3-4AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT015W120G3-4AG is usually 5 days.

3.What payment methods are accepted for SCT015W120G3-4AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT015W120G3-4AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT015W120G3-4AG?

SCT015W120G3-4AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT015W120G3-4AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT015W120G3-4AG?

For technical support, including SCT015W120G3-4AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT015W120G3-4AG requirements.

6.How does Aetrix verify that SCT015W120G3-4AG is sourced from the original manufacturer or authorized distributors?

All SCT015W120G3-4AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT015W120G3-4AG meets industry standards.

7.What is the process for return or replacement of SCT015W120G3-4AG?

All SCT015W120G3-4AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT015W120G3-4AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT015W120G3-4AG part is unused and in its original packaging.

Return procedure for SCT015W120G3-4AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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