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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT027H65G3AG

Name: SCT027H65G3AG
Brand: STMicroelectronics
SKU: SCT027H65G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT027H65G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT027H65G3AG.pdf

Description:: AUTOMOTIVE-GRADE SILICON CARBIDE

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Product details

Overview

SCT027H65G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET in H²PAK-7 package, rated for 650 V V_DS, 29 mΩ typ. R_DS(on) at 18 V V_GS and 30 A, with 60 A continuous drain current at T_C = 25 °C. It delivers high-speed switching (t_d(off) = 25.6 ns, Q_g = 48.6 nC), low C_iss (1277 pF), and robust intrinsic body diode (t_rr = 13.7 ns, Q_rr = 67.5 nC) for EV traction inverters.

For engineers reviewing the SCT027H65G3AG datasheet, SCT027H65G3AG pinout, SCT027H65G3AG application, or SCT027H65G3AG equivalent, key selection criteria include its automotive-grade SiC MOSFET identity, H²PAK-7 source-sensing configuration, 0.50 °C/W R_thJC, 650 V breakdown voltage, and AEC-Q101 qualification status.

Technical Context

This device implements ST's third-generation SiC MOSFET technology, featuring a planar gate structure optimized for high-temperature stability and low gate charge. Its R_DS(on) remains stable across -55 °C to 175 °C (normalized R_DS(on) ≈ 1.0 at 25 °C, ~1.15 at 175 °C), and V_GS(th) exhibits minimal drift (1.8–4.2 V range, normalized to ~0.85 at 175 °C).

The integrated source-sensing pin (Pin 2) enables precise driver-source reference for gate drive loop optimization, reducing voltage overshoot during fast switching. The intrinsic SiC body diode supports bidirectional conduction with low V_SD (2.9 V at 30 A) and negligible reverse recovery loss-critical for hard-switched DC/DC and OBC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 800 V bus systems with 23% margin
R_DS(on) typ.	29 mΩ at V_GS = 18 V, I_D = 30 A, T_J = 25 °C - Enables <1.8 W conduction loss at 60 A
I_D cont.	60 A at T_C = 25 °C - Supported by low R_thJC (0.50 °C/W) and H²PAK-7 copper-tab thermal path
Q_g	48.6 nC - Enables efficient 10–20 Ω gate drive with <100 ns total switching time
t_rr	13.7 ns - Near-zero reverse recovery loss eliminates snubber requirements in totem-pole PFC
V_GS(th)	1.8–4.2 V - Wide threshold ensures noise immunity while enabling 15 V gate drive for low R_DS(on)
E_off	96 µJ at V_DD = 400 V, I_D = 30 A, R_G = 10 Ω - 40% lower than comparable 650 V Si MOSFETs

Pinout & Package

H²PAK-7 is a thermally enhanced surface-mount package with isolated gate terminals, dual source sensing, and high-current drain tab (exposed copper on bottom). Its 15.25 mm × 10.40 mm footprint supports >300 W power dissipation via PCB copper pour and heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (TAB)	Main high-current drain path	Exposed copper thermal pad; electrically connected to drain, requires solder mask opening and thermal via array
Gate (1)	Control electrode	Standard gate input; routed with controlled impedance to minimize ringing in >100 kHz switching
Driver source (2)	Reference for gate driver IC	Separate Kelvin source connection isolates gate loop from power source return, improving switching fidelity
Power source (3, 4, 5, 6, 7)	Main source current return	Five parallel pins reduce source inductance and resistive drop under 60 A continuous load

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain use per stress test requirements including HTGB, HTRB, and temperature cycling
Source sensing pin	Enables true Kelvin gate drive, eliminating source inductance impact on V_GS waveform integrity
Low R_DS(on) over full temperature range	R_DS(on) increases only ~15% from 25 °C to 175 °C - maintains efficiency in high-temp OBC operation
Fast intrinsic SiC body diode	t_rr = 13.7 ns, Q_rr = 67.5 nC - eliminates need for external anti-parallel SiC Schottky in bidirectional converters
High dV/dt immunity	Capable of >50 V/ns without false turn-on due to low Crss (17.2 pF) and high Miller plateau voltage margin

Applications

Electric Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power motor drive stage in 400 V/800 V BEV platforms operating up to 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in three-phase bridge leg; handles 60 A RMS phase current with <100 ns switching transitions.

Use Value: Low R_DS(on) and E_off reduce conduction + switching losses by >35% vs. Si IGBTs, enabling smaller heatsinks and higher power density.

Use Scenario: Active clamp flyback or dual-active-bridge topology in 11 kW OBC converting AC grid to 400 V/800 V battery.

IC Role / Device Role / Timing Role: Primary-side high-side switch with synchronous rectification capability via intrinsic body diode.

Use Value: Fast t_rr and low Q_rr eliminate reverse recovery spikes, allowing zero-voltage switching (ZVS) across full load range.

DC/DC Converter (EV)

Traction Auxiliary Power Module

Use Scenario: Isolated 800 V to 48 V bi-directional converter supplying auxiliary loads and battery pre-charge in HEV/EV.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge; operates with 50–100 kHz variable frequency control.

Use Value: Stable R_DS(on) over temperature ensures consistent efficiency from -40 °C cold start to 175 °C peak junction temp.

Use Scenario: Compact 3 kW auxiliary inverter powering HVAC compressors, steering pumps, and 12 V DC-DC in next-gen BEVs.

IC Role / Device Role / Timing Role: Half-bridge switch with integrated source sensing for precise gate timing in space-constrained modules.

Use Value: H²PAK-7 package enables 300 W dissipation in <12 cm² PCB area, meeting ASIL-B functional safety layout constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0030065K (Wolfspeed)	650 V, 30 mΩ, TO-247-4L; no dedicated driver source pin; R_thJC = 0.45 °C/W	Lacks Kelvin source; requires careful gate loop layout to avoid oscillation at >150 kHz	Preferred where TO-247 mechanical compatibility is required and gate drive layout can be tightly controlled
IMW65R028M1H (Infineon)	650 V, 28 mΩ, TO-263-7; driver source pin present; R_thJC = 0.55 °C/W; Q_g = 52 nC	Higher gate charge increases driver loss; slightly higher thermal resistance limits peak power density	Better fit for cost-sensitive industrial DC/DC where AEC-Q101 is not mandatory

Compared with C3M0030065K and IMW65R028M1H, SCT027H65G3AG uniquely combines AEC-Q101 certification, H²PAK-7's low-inductance source architecture, and industry-leading E_off/Q_g ratio-making it optimal for automotive traction and OBC designs demanding both reliability and high-frequency efficiency.

Availability

SCT027H65G3AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-efficiency DC/DC converters requiring stable component supply, automotive qualification, and high-temperature operational continuity.

Supply support for SCT027H65G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

SCT027H65G3AG belongs to ST's STPOWER SiC portfolio, engineered specifically for high-voltage, high-efficiency power conversion in electric mobility systems where thermal robustness, switching speed, and automotive qualification are mandatory.

FAQ

What is the maximum recommended gate drive voltage for SCT027H65G3AG?

The absolute maximum V_GS is -10 V to +22 V, but ST specifies -5 V to +18 V as the recommended operating range. Driving above +18 V increases gate oxide stress without meaningful R_DS(on) improvement; below -5 V risks incomplete turn-off. For reliable operation, use +15 V turn-on and -5 V turn-off with <10 ns edge rates.

Does SCT027H65G3AG require an external gate resistor for stability?

Yes-ST recommends a gate resistor between 5 Ω and 15 Ω depending on switching speed and EMI targets. At R_G = 10 Ω, measured t_d(on) = 13.2 ns and t_d(off) = 25.6 ns. Lower values increase dI/dt and risk parasitic turn-on; higher values degrade efficiency and thermal performance.

How is the source sensing pin (Pin 2) connected in a typical gate driver circuit?

Pin 2 must connect directly to the driver IC's source output (e.g., ISO5852S OUT– or UCC5870-30 SRC) with minimal trace length (<5 mm) and no shared return paths. It should never be tied to power source pins (3–7); doing so defeats Kelvin sensing and reintroduces source inductance into the gate loop.

Can SCT027H65G3AG replace silicon IGBTs in existing 650 V inverter designs?

Yes-but with gate drive and layout modifications. Its lower V_GS(th), faster switching, and lack of tail current demand revised gate voltage levels, reduced gate resistance, and tighter layout to manage dV/dt-induced noise. Thermal design benefits significantly due to lower R_thJC and absence of conduction loss penalty at high frequency.

SCT027H65G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT027H65G3AG FAQ

1.How can I place an order for SCT027H65G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT027H65G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT027H65G3AG reliable?

The price and inventory of SCT027H65G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT027H65G3AG is usually 5 days.

3.What payment methods are accepted for SCT027H65G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT027H65G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT027H65G3AG?

SCT027H65G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT027H65G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT027H65G3AG?

For technical support, including SCT027H65G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT027H65G3AG requirements.

6.How does Aetrix verify that SCT027H65G3AG is sourced from the original manufacturer or authorized distributors?

All SCT027H65G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT027H65G3AG meets industry standards.

7.What is the process for return or replacement of SCT027H65G3AG?

All SCT027H65G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT027H65G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT027H65G3AG part is unused and in its original packaging.

Return procedure for SCT027H65G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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