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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT040H65G3AG

Name: SCT040H65G3AG
Brand: STMicroelectronics
SKU: SCT040H65G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT040H65G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: SCT040H65G3AG.pdf

Description:: AUTOMOTIVE-GRADE SILICON CARBIDE

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Product details

Overview

SCT040H65G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide (SiC) N-channel Power MOSFET in H²PAK-7 package, rated for 650 V drain-source voltage, 40 mΩ typical R_DS(on) at V_GS = 18 V and T_J = 25 °C, and 30 A continuous drain current at T_C = 25 °C. It integrates a fast, robust intrinsic body diode and features source sensing pin for precision gate drive control - deployed in high-efficiency EV/HEV DC/DC converters and main traction inverters.

For engineers reviewing the SCT040H65G3AG datasheet, SCT040H65G3AG pinout, SCT040H65G3AG application, or SCT040H65G3AG equivalent, key selection criteria include its 0.68 °C/W junction-to-case thermal resistance, 39.5 nC total gate charge, 18 ns reverse recovery time, -5 to 18 V recommended gate drive range, and AEC-Q101 qualification for automotive powertrain systems.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate SiC technology, delivering stable R_DS(on) across -55 °C to 175 °C with minimal temperature coefficient. Its low C_iss (920 pF), C_oss (94 pF), and Cr_ss (13 pF) enable high-frequency switching up to 100s of kHz while maintaining SOA integrity under pulsed conditions (I_DM = 176 A).

The device implements dual-source configuration: pins 3–7 serve as power source terminals, pin 2 as driver source for Kelvin sensing, and pin 1 as gate - enabling accurate gate-loop control and minimizing common-source inductance effects during hard-switching transients in 400–800 V battery architectures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V nominal EV battery systems with >50% voltage margin for transient overvoltage events.
R_DS(on) typ.	40 mΩ at V_GS = 18 V, I_D = 20 A, T_J = 25 °C - Enables <1.6 W conduction loss at 20 A, critical for OBC and inverter efficiency targets.
I_D cont.	30 A at T_C = 25 °C and T_C = 100 °C - Sustains full rated current without derating up to 100 °C case temperature.
Q_g	39.5 nC - Low gate charge reduces driver power demand and enables use of compact, cost-effective gate drivers in space-constrained modules.
t_r/t_f	8 ns fall / 17 ns rise - Fast edge rates support >100 kHz switching frequencies while limiting switching energy (E_on = 79 µJ, E_off = 67 µJ).
V_SD	2.8 V at I_SD = 20 A, V_GS = 0 V - Low forward drop of integrated SiC body diode minimizes freewheeling losses in hard-commutated topologies.
R_thJC	0.68 °C/W - Enables direct mounting to liquid-cooled cold plates with predictable thermal interface design and <120 °C junction rise at 200 W dissipation.

Pinout & Package

H²PAK-7 surface-mount package with isolated copper tab (Drain), 7-terminal layout optimized for high-current, low-inductance PCB routing and double-sided cooling. Thermal pad area supports >200 W dissipation with proper heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain connection	Exposed copper thermal pad serving as primary heat path and high-current drain node - must be soldered to large copper pour or heatsink.
1 (Gate)	Control input	Standard gate terminal; requires -5 to 18 V drive with <1.4 Ω gate resistance for optimal switching performance.
2 (Driver Source)	Kelvin source sense	Provides dedicated low-inductance return path for gate driver, eliminating source inductance impact on switching timing and dV/dt immunity.
3–7 (Power Source)	Power return path	Parallel source terminals reduce current density per bond wire and minimize parasitic inductance in high-di/dt applications like traction inverters.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain applications including motor drives and on-board chargers per stress test requirements.
Source sensing pin (pin 2)	Enables true Kelvin gate drive, decoupling gate loop from power loop to suppress oscillation and improve dV/dt ruggedness (>50 V/ns).
Low R_DS(on) tempco	R_DS(on) increases only ~1.5× from 25 °C to 175 °C - ensures stable conduction loss and thermal runaway immunity in wide-temp operation.
Fast intrinsic SiC body diode	trr = 18 ns, Q_rr = 97 nC - Eliminates need for external anti-parallel SiC diodes in bridge configurations, reducing BOM count and layout area.
H²PAK-7 mechanical robustness	Rated for >1000 thermal cycles (−40 °C to 150 °C) and vibration compliance per ISO 16750-3 - suitable for under-hood EV power module integration.

Applications

DC/DC Converter for EV/HEV

Main Inverter (Electric Traction)

Use Scenario: High-frequency isolated bidirectional DC/DC converter stepping 400 V battery voltage to 12 V/48 V auxiliary bus in BEV platforms.

IC Role / Device Role / Timing Role: Primary-side SiC MOSFET switch operating at 100–250 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 40 mΩ R_DS(on) and 39.5 nC Q_g enable >97% peak efficiency and 30% smaller magnetics versus Si-based solutions.

Use Scenario: Phase-leg switch in 3-phase traction inverter driving permanent magnet synchronous motor (PMSM) in 400 V architecture.

IC Role / Device Role / Timing Role: High-side/low-side switching element with source-sense Kelvin configuration for precise gate control under 10 kA/s di/dt.

Use Value: Dual-source terminals (pins 3–7) and 0.68 °C/W R_thJC sustain 30 A RMS current with <110 °C junction temperature at 10 kHz PWM.

On-Board Charger (OBC)

Traction Motor Drive Auxiliary Supply

Use Scenario: Active clamp flyback or totem-pole PFC stage converting AC grid to 400 V DC bus in single-phase 11 kW OBC units.

IC Role / Device Role / Timing Role: Fast-switching unidirectional switch handling 20 A peak current with tight dead-time control.

Use Value: 18 ns trr and 97 nC Q_rr eliminate reverse recovery spikes, enabling >99% PFC efficiency and reduced EMI filter size.

Use Scenario: Isolated auxiliary power supply feeding gate drivers, MCU, and sensors in traction inverter control board.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side high-frequency switch in resonant LLC topology.

Use Value: Integrated SiC body diode allows self-synchronous rectification in half-bridge LLC, removing discrete diode and improving light-load regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0040065K	Same 650 V / 40 mΩ rating but TO-247-4L package; higher R_thJC (0.95 °C/W); no dedicated driver source pin.	Limited to air-cooled or lower-power modules; lacks Kelvin source for ultra-high dV/dt immunity in traction inverters.	Select when footprint compatibility with legacy TO-247 layouts is required and gate drive loop inductance is less critical.
ROHM SCT3040KL	650 V / 42 mΩ; H3PAK-7L package; slightly higher Q_g (42 nC); same AEC-Q101 qualification.	Compatible in OBC and DC/DC, but 3 ns slower fall time limits maximum frequency in 200+ kHz designs.	Prefer for cost-sensitive industrial OBC where 96.5% efficiency is acceptable and layout space allows larger gate resistor.

Compared with C3M0040065K and SCT3040KL, SCT040H65G3AG delivers superior thermal performance (0.68 °C/W), lowest switching energy (146 µJ total), and unique driver-source pin - making it the optimal choice for thermally constrained, high-reliability automotive traction and fast-charging applications.

Availability

SCT040H65G3AG is available at Aetrix Electronics and suitable for electric vehicle DC/DC converters, main traction inverters, and on-board chargers requiring stable component supply, AEC-Q101 compliance, and high-temperature reliability.

Supply support for SCT040H65G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STPOWER SiC portfolio - engineered specifically for high-efficiency, high-power-density EV power conversion systems operating at elevated temperatures and voltages.

FAQ

What gate drive voltage range is recommended for reliable operation?

The SCT040H65G3AG specifies -5 V to +18 V as the recommended gate-source operating voltage range. A minimum -5 V negative turn-off bias improves noise immunity and prevents spurious turn-on during high dV/dt commutation. Gate drive must avoid exceeding the absolute maximum V_GS of -10 V to +22 V to prevent oxide degradation.

How does the driver source (pin 2) differ from power source (pins 3–7)?

Pin 2 is a dedicated Kelvin source connection for the gate driver return path, electrically isolated from high-current power loops. Pins 3–7 carry the full 30 A source current and connect directly to the PCB ground plane. This separation eliminates source inductance from the gate control loop, ensuring consistent switching timing and preventing oscillation during fast transitions.

Is this device suitable for hard-switched totem-pole PFC topologies?

Yes - its 18 ns reverse recovery time, 97 nC Q_rr, and soft reverse recovery behavior make it well-suited for totem-pole PFC. The fast, low-loss intrinsic SiC body diode enables efficient bidirectional conduction without external antiparallel diodes, and the source-sense pin supports precise gate timing critical for zero-current switching transitions.

What thermal interface material is recommended for the H²PAK-7 tab?

For optimal thermal performance, ST recommends using a thermally conductive, electrically insulating interface material with ≤0.15 °C·in²/W (≤0.23 °C·cm²/W) thermal resistance, such as silicone-based phase-change pads or ceramic-filled greases. Minimum solder coverage on the tab should exceed 90% to achieve the specified 0.68 °C/W R_thJC.

SCT040H65G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 20A, 18V

Vgs(th) (Max) @ Id:: 4.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 39.5 nC @ 18 V

Vgs (Max):: +18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 920 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 221W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-7

SCT040H65G3AG FAQ

1.How can I place an order for SCT040H65G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT040H65G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT040H65G3AG reliable?

The price and inventory of SCT040H65G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT040H65G3AG is usually 5 days.

3.What payment methods are accepted for SCT040H65G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT040H65G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT040H65G3AG?

SCT040H65G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT040H65G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT040H65G3AG?

For technical support, including SCT040H65G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT040H65G3AG requirements.

6.How does Aetrix verify that SCT040H65G3AG is sourced from the original manufacturer or authorized distributors?

All SCT040H65G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT040H65G3AG meets industry standards.

7.What is the process for return or replacement of SCT040H65G3AG?

All SCT040H65G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT040H65G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT040H65G3AG part is unused and in its original packaging.

Return procedure for SCT040H65G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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