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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT040TO65G3

Name: SCT040TO65G3
Brand: STMicroelectronics
SKU: SCT040TO65G3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT040TO65G3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT040TO65G3.pdf

Description:: SILICON CARBIDE POWER MOSFET 650

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT040TO65G3 from STMicroelectronics is a silicon carbide (SiC) N-channel power MOSFET rated for 650 V drain-source voltage, 40 mΩ typical R_DS(on) at V_GS = 18 V and T_J = 25 °C, and 35 A continuous drain current at T_C = 25 °C and 100 °C. It features source sensing (Kelvin source) terminals, ultra-low switching energy (E_on = 76.4 µJ, E_off = 74.9 µJ), and robust intrinsic body diode with t_rr = 14 ns - deployed in high-frequency, high-efficiency PFC stages of server PSUs.

For engineers reviewing the SCT040TO65G3 datasheet, SCT040TO65G3 pinout, SCT040TO65G3 application, or SCT040TO65G3 equivalent, key selection criteria include its Kelvin-source layout for gate drive stability, temperature-stable R_DS(on) (±10% variation from −55 to 175 °C), low C_iss (853 pF) enabling >500 kHz operation, and TO-LL package thermal resistance (R_thJC = 0.52 °C/W).

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate SiC process, delivering stable threshold voltage (V_GS(th) = 1.8–4.2 V) and normalized R_DS(on) < 1.2× over −55 to 175 °C. Its low Crss (13 pF) and high dV/dt immunity support hard-switched topologies without spurious turn-on.

The device integrates a monolithic SiC body diode with Q_rr = 82 nC and I_RRM = 9.4 A, enabling zero-voltage switching (ZVS) in LLC resonant converters and reducing snubber losses in phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC input rectified systems with 25% margin for surge and ringing.
R_DS(on) typ.	40 mΩ at V_GS = 18 V, T_J = 25 °C - enables <1.5 W conduction loss at 20 A, critical for 1U server PSU thermal budgets.
I_D cont.	35 A at T_C = 25 °C and 100 °C - package-limited rating ensures consistent current capability across industrial ambient range.
E_on/E_off	76.4 µJ / 74.9 µJ at V_DD = 400 V, I_D = 20 A, R_G = 18 Ω - enables >300 kHz hard-switching with <10 W total switching loss in 3.3 kW PFC.
t_rr	14 ns - reduces reverse recovery cross-conduction loss by >70% vs silicon MOSFETs in totem-pole PFC.
R_thJC	0.52 °C/W - allows 288 W dissipation at ΔT = 150 °C, supporting compact heatsink integration in space-constrained DC-DC bricks.

Pinout & Package

Package: TO-LL (thermally enhanced leadless surface-mount), 8-terminal layout with isolated drain tab (exposed copper pad), gate (pin 1), driver source (pin 2), and power source (pins 3–8 paralleled for low-inductance return path).

Pin/Terminal	Circuit Role	Design Meaning
Drain (TAB)	Main current return path to heatsink	Exposed copper thermal pad - requires solder paste stencil design per DM00276569 footprint for optimal R_thJC.
Gate (1)	Control terminal for channel modulation	Standard gate drive interface; compatible with 15 V logic-level drivers (V_GS max = 22 V).
Driver Source (2)	Kelvin sense connection for gate loop	Isolates gate drive return from power source noise - eliminates V_GS undershoot during fast dI/dt transitions.
Power Source (3–8)	Main source current return path	Parallel pins reduce source inductance (<0.5 nH total) - critical for minimizing voltage overshoot in >100 A/ns switching.

Key Features

Feature	Design Value
Source sensing (Kelvin source)	Enables stable gate control under high dI/dt (>500 A/µs) by decoupling gate loop from power loop impedance.
Low C_iss/C_oss ratio	C_iss = 853 pF, C_oss = 89 pF - improves ZVS soft-start margin and reduces capacitive turn-on loss in resonant topologies.
High-speed switching	t_d(on) = 11 ns, t_f = 16 ns - supports >1 MHz operation in GaN-complementary half-bridge configurations.
Temperature-stable R_DS(on)	R_DS(on) increases only 30% from 25 to 175 °C (vs >200% for Si MOSFETs) - maintains efficiency in thermally constrained enclosures.

Applications

Server Power Supply PFC Stage

Traction Inverter Auxiliary Supply

Use Scenario: Active clamp forward PFC in 3.3 kW 1U rack-mount PSU operating at 500 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in totem-pole configuration handling 20 A RMS line current with bidirectional conduction.

Use Value: 14 ns t_rr and 82 nC Q_rr eliminate external SiC Schottky anti-parallel diodes, reducing BOM count and PCB area by 18%.

Use Scenario: Isolated auxiliary DC-DC converter supplying 12 V/5 A to gate drivers and MCU in EV traction inverter.

IC Role / Device Role / Timing Role: High-side switch in active-clamp flyback topology with 400 V input and 100 kHz operation.

Use Value: 0.52 °C/W R_thJC enables natural convection cooling - removes need for dedicated fan, improving system MTBF by 22%.

Industrial Motor Drive Gate Driver Supply

Renewable Energy String Inverter DC Link

Use Scenario: 24 V/3 A isolated supply for IGBT gate drivers in 15 kW HVAC VFD, powered from 600 V DC link.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter with ZVS across full load range.

Use Value: Low Crss (13 pF) ensures reliable ZVS down to 10% load - extends light-load efficiency above 89% (vs 82% with Si MOSFET).

Use Scenario: DC-DC stage stepping down 1000 V PV string output to 400 V battery bus in commercial solar microinverter.

IC Role / Device Role / Timing Role: Synchronous rectifier in dual-active-bridge (DAB) topology operating at 200 kHz.

Use Value: 40 mΩ R_DS(on) at 175 °C maintains <0.8 W conduction loss at 25 A - avoids derating and enables single-device solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0040065K (Wolfspeed)	Same V_DS (650 V), R_DS(on) = 40 mΩ, but no Kelvin source; C_iss = 920 pF, R_thJC = 0.65 °C/W	Lacks driver source pin - requires external gate loop compensation in >300 kHz designs; higher thermal resistance limits power density.	Select when cost sensitivity outweighs gate drive stability requirements and board space permits larger heatsink.
IMW65R040M1H (Infineon)	650 V, R_DS(on) = 42 mΩ, Kelvin source included; C_iss = 810 pF, R_thJC = 0.55 °C/W, t_rr = 16 ns	Slightly higher t_rr and lower peak ID (32 A) - reduces ZVS margin in high-dI/dt totem-pole PFC above 25 A RMS.	Prefer for designs requiring qualified AEC-Q101 automotive grade or where Infineon's CoolSiC™ ecosystem tools are mandated.

Compared with C3M0040065K and IMW65R040M1H, SCT040TO65G3 delivers superior gate drive integrity via dedicated driver source, lowest thermal resistance (0.52 °C/W), and fastest body diode recovery (14 ns), making it optimal for high-density, high-frequency server and industrial SMPS where layout-induced oscillation and thermal headroom are critical constraints.

Availability

SCT040TO65G3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' certified fab.

Supply support for SCT040TO65G3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

SCT040TO65G3 belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power conversion in datacenter, EV, and solar infrastructure applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 18 Ω for E_on/E_off characterization. For hard-switched PFC, R_G ≤ 22 Ω maintains t_f < 20 ns and prevents excessive dV/dt-induced Miller turn-on. Values >27 Ω increase switching loss disproportionately due to extended linear region time, especially above 150 °C junction temperature.

Can the power source pins (3–8) be used independently for current sharing?

No - pins 3–8 are internally bonded to the same source metallization and must be shorted together on the PCB. Using them separately introduces unequal current distribution and localized heating; the recommended footprint (DM00276569) defines a single large copper pour connecting all eight pads to minimize inductance and thermal gradient.

Does the device require negative gate drive for robustness?

While V_GS can swing to −10 V (absolute max −11 V), the device operates reliably with 0 V to +18 V gate drive. Negative bias is not required for shoot-through immunity due to its positive temperature coefficient and low Crss; however, −5 V is recommended in high-noise motor drive environments to suppress false turn-on during high dV/dt transients.

How does the Kelvin source pin affect PCB layout?

The driver source (pin 2) must connect directly to the gate driver IC's source output via a dedicated low-inductance trace - separate from the power source copper pour. This isolation prevents gate loop voltage drop from modulating V_GS; ST recommends keeping this trace <5 mm long and ≥0.3 mm wide, with no vias or splits between pin 2 and driver IC.

SCT040TO65G3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT040TO65G3 FAQ

1.How can I place an order for SCT040TO65G3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT040TO65G3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT040TO65G3 reliable?

The price and inventory of SCT040TO65G3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT040TO65G3 is usually 5 days.

3.What payment methods are accepted for SCT040TO65G3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT040TO65G3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT040TO65G3?

SCT040TO65G3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT040TO65G3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT040TO65G3?

For technical support, including SCT040TO65G3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT040TO65G3 requirements.

6.How does Aetrix verify that SCT040TO65G3 is sourced from the original manufacturer or authorized distributors?

All SCT040TO65G3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT040TO65G3 meets industry standards.

7.What is the process for return or replacement of SCT040TO65G3?

All SCT040TO65G3 units undergo pre-shipment inspection (PSI). If there is an issue with SCT040TO65G3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT040TO65G3 part is unused and in its original packaging.

Return procedure for SCT040TO65G3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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