STMicroelectronics SCT040W65G3-4AG

Overview

SCT040W65G3-4AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide Power MOSFET designed for high-efficiency, high-temperature traction power stages. It delivers 650 V V_DS, 45 mΩ R_DS(on) (at V_GS = 18 V, T_J = 25 °C), 30 A continuous drain current at T_C = 25 °C, and operates up to T_J = 200 °C - enabling compact, high-frequency DC/DC converters in electric vehicle on-board chargers.

For engineers reviewing the SCT040W65G3-4AG datasheet, SCT040W65G3-4AG pinout, SCT040W65G3-4AG application, or SCT040W65G3-4AG equivalent, key selection criteria include its 13 ns turn-on delay, 16 ns SiC body diode reverse recovery time, source-sensing configuration for gate drive optimization, and HiP247-4 package thermal resistance of 0.73 °C/W.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology, delivering stable R_DS(on) across -55 °C to 200 °C with minimal temperature coefficient. Its low C_iss (860 pF) and C_rss (13 pF) enable fast, low-loss switching at frequencies beyond 100 kHz.

The integrated robust intrinsic body diode supports hard-switched topologies without external anti-parallel diodes. The dedicated driver source (pin 3) separates power and sensing return paths, reducing gate loop inductance and improving switching control fidelity under high di/dt conditions.

Key Specifications

Pinout & Package

Package: HiP247-4 - thermally enhanced 4-pin variant of the HiP247 family, featuring isolated source sensing terminal and optimized copper tab for 0.73 °C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0040065K and SCT3040KL, SCT040W65G3-4AG uniquely combines Kelvin source, 200 °C operation, and lowest E_off among 45 mΩ-class 650 V SiC MOSFETs - making it optimal for thermally aggressive, high-frequency OBC and traction inverter stages demanding long-term reliability.

Availability

SCT040W65G3-4AG is available at Aetrix Electronics and suitable for electric vehicle on-board chargers, traction inverters, and high-voltage auxiliary power supplies requiring stable component supply, automotive-grade traceability, and long-lifecycle availability.

Supply support for SCT040W65G3-4AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power electronics solutions with vertical manufacturing and broad IP portfolio.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density EV power conversion systems operating at elevated temperatures and frequencies.

FAQ

What is the maximum gate-source voltage for reliable operation?

The absolute maximum V_GS is -10 V to +22 V for transients <1 µs, but the recommended operating range is -5 V to +18 V. Sustained operation outside -5 V to +18 V risks oxide degradation or threshold shift; +18 V ensures full enhancement while maintaining safe margin against overshoot in high-dV/dt layouts.

Does the HiP247-4 package require special PCB layout considerations?

Yes: the Driver Source (pin 3) must be routed separately from Power Source (pin 2) with minimal length and direct connection to gate driver ground. The Drain tab requires full thermal pad with ≥4 thermal vias to internal ground planes. Keep gate loop area under 25 mm² to avoid oscillation with 1.4 Ω intrinsic R_g.

How does the body diode performance compare to discrete SiC Schottky diodes?

Its intrinsic body diode achieves 16 ns t_rr and 2.8 V V_SD at 20 A - matching mid-range discrete SiC Schottkys in speed but with higher forward drop. It eliminates component count and parasitic inductance in synchronous rectification, though discrete diodes remain preferred for ultra-low V_F (<2.0 V) requirements.

Can this MOSFET replace silicon IGBTs in existing 400 V inverter designs?

Yes - with gate driver redesign: replace ±15 V IGBT drivers with 0/+18 V SiC-optimized drivers, add Kelvin source routing, and re-tune gate resistors (typically 5–10 Ω) to manage dV/dt. Thermal design benefits significantly: R_thJC = 0.73 °C/W enables 30% smaller heatsinks versus 650 V IGBTs with similar R_thJC ≈ 1.1 °C/W.