STMicroelectronics SCT055HU65G3AG

Overview

SCT055HU65G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide N-channel Power MOSFET in HU3PAK package, rated for 650 V drain-source voltage, 58 mΩ typical R_DS(on) at 18 V_GS, and 30 A continuous drain current at T_C = 25 °C and 100 °C. It serves as a high-efficiency switching element in high-voltage traction inverters and on-board chargers for electric vehicles.

For engineers reviewing the SCT055HU65G3AG datasheet, SCT055HU65G3AG pinout, SCT055HU65G3AG application, or SCT055HU65G3AG equivalent, key selection criteria include its low R_DS(on) over temperature (69 mΩ at 175 °C), fast switching (t_d(off) = 14.2 ns), robust intrinsic SiC body diode (t_rr = 12 ns), gate drive compatibility (–5 V to +18 V), and automotive-grade thermal performance (R_thJC = 0.81 °C/W).

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology, delivering stable R_DS(on) across –55 °C to 175 °C and minimal capacitance variation with V_DS. Its low C_iss (721 pF) and C_rss (11 pF) enable high-frequency operation up to 200 kHz in hard-switched topologies.

The integrated source-sensing pin (pin 2) enables Kelvin-source configuration for precise gate control and reduced switching losses. The device's intrinsic body diode exhibits low Q_rr (132 nC) and I_RRM (18 A), supporting bidirectional conduction in LLC and phase-shifted full-bridge converters without external anti-parallel diodes.

Key Specifications

Pinout & Package

HU3PAK is a thermally enhanced surface-mount package with exposed drain tab (TAB) for low-inductance, high-current PCB mounting. It features 7 terminals: 1 Gate, 2 Driver Source (Kelvin), 3–7 Power Source (paralleled), and TAB as Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065065K and SCT3060AL, SCT055HU65G3AG delivers superior thermal performance (0.81 °C/W), lower switching energy (E_off = 19.3 µJ), and Kelvin-source capability-making it optimal for space-constrained, high-reliability EV traction stages demanding minimal gate-loop sensitivity.

Availability

SCT055HU65G3AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, AEC-Q101 compliance, and long-term automotive lifecycle support.

Supply support for SCT055HU65G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STPOWER SiC portfolio, engineered specifically for high-efficiency, high-power-density EV power conversion systems operating at elevated temperatures and frequencies.

FAQ

What gate drive voltage range is recommended for reliable operation?

The recommended gate drive voltage is –5 V to +18 V, with transient tolerance up to –11 V/+25 V for <1 µs pulses. A minimum of +15 V is required to achieve the 58 mΩ R_DS(on); gate drive must be referenced to the Kelvin source (pin 2), not the power source pins, to maintain accurate threshold control and prevent false turn-on during high dV/dt events.

How does the Kelvin source pin (pin 2) affect PCB layout?

Pin 2 must be routed separately from the high-current source paths (pins 3–7) and connected directly to the gate driver's source return node. This breaks the shared source inductance between gate loop and power loop, preventing voltage overshoot on the gate during turn-off and ensuring consistent switching timing. A dedicated low-inductance trace <2 mm long is required.

Is this device suitable for unidirectional or bidirectional switching topologies?

SCT055HU65G3AG supports both modes: its robust intrinsic SiC body diode (I_SD = 30 A, t_rr = 12 ns) enables efficient bidirectional conduction in half-bridge and full-bridge LLC converters, while its low R_DS(on) and fast switching make it equally effective in unidirectional hard-switched boost/PFC stages. No external anti-parallel diode is needed in most cases.

What thermal interface material is recommended for the HU3PAK drain tab?

A high-thermal-conductivity (≥3 W/m·K), low-viscosity thermal paste or phase-change pad is recommended to fill microscopic voids between the exposed copper TAB and cold plate. Minimum bond line thickness should be 30–50 µm; excessive paste volume must be avoided to prevent squeeze-out into adjacent terminals during clamping.