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STMicroelectronics SCT060HU75G3AG
- Part No.:
- SCT060HU75G3AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Datasheet:
-
SCT060HU75G3AG.pdf
- Description:
- AUTOMOTIVE-GRADE SILICON CARBIDE
- Quantity:
- Payment:
- Shipping:
Inventory:582
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Product details
Overview
SCT060HU75G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide (SiC) N-channel Power MOSFET in HU3PAK package, rated for 750 V VDS, 58 mΩ RDS(on) (typ. at VGS = 18 V, TJ = 25 °C), and 30 A continuous drain current. It delivers high-speed switching, low gate charge (29 nC), and a robust intrinsic body diode with 12 ns trr, targeting high-efficiency traction inverters in electric vehicles.
For engineers reviewing the SCT060HU75G3AG datasheet, SCT060HU75G3AG pinout, SCT060HU75G3AG application, or SCT060HU75G3AG equivalent, key selection criteria include its 750 V blocking capability, temperature-stable RDS(on) (≤87 mΩ up to 175 °C), 0.81 °C/W RthJC, and automotive-grade qualification for EV powertrain systems.
Technical Context
This SiC MOSFET employs ST's third-generation trench-gate technology, enabling low output capacitance (Coss = 63 pF) and reverse transfer capacitance (Crss = 9 pF) at 400 V, which reduce switching losses and improve EMI behavior. Its gate threshold voltage (VGS(th) = 1.8–4.2 V) ensures stable turn-on under wide temperature ranges (–55 to 175 °C).
The device integrates a co-packaged, fast-recovery SiC body diode with Qrr = 49 nC and IRRM = 7.4 A, eliminating need for external anti-parallel diodes in bidirectional topologies. Source sensing pin (Pin 2) enables Kelvin-source connection for precise gate drive control and reduced conduction loss uncertainty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 750 V - Enables use in 400–800 V battery architectures without series stacking. |
| RDS(on) typ. | 58 mΩ at VGS = 18 V, TJ = 25 °C - Delivers <1.7 W conduction loss at 30 A, reducing heatsink requirements. |
| Qg | 29 nC - Supports >100 kHz switching with moderate gate driver strength (e.g., 2 A peak). |
| trr | 12 ns - Minimizes reverse recovery energy (Err ≈ 0.6 µJ), critical for ZVS/ZCS soft-switching designs. |
| RthJC | 0.81 °C/W - Enables direct mounting to cold plates; supports >150 W sustained power dissipation at ΔT = 120 °C. |
| ID cont. | 30 A at TC = 25 °C and 100 °C - Package-limited rating ensures consistent thermal derating across operating conditions. |
| VGS range | –5 to +18 V (operating); –11 to +25 V (transient) - Compatible with standard isolated gate drivers and fault-tolerant bias supplies. |
Pinout & Package
HU3PAK is a thermally enhanced, surface-mount power package with exposed drain tab (TAB) on bottom side for direct thermal interface, and 7-pin leadframe layout optimized for high-current, low-inductance PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB (Drain) | Drain terminal / Thermal path | Exposed copper pad carrying full drain current and dissipating >95% of heat directly to heatsink/cold plate. |
| 1 | Gate | Standard gate input; requires Kelvin-source connection (Pin 2) for accurate VGS control during high di/dt switching. |
| 2 | Driver source (Kelvin source) | Low-inductance sense return for gate driver feedback loop; decouples power source path from gate control path. |
| 3–7 | Power source (Source) | Five parallel source pins minimize source inductance and voltage overshoot during hard commutation events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain applications including motor drives, OBC, and DC/DC converters per stress test requirements. |
| Low RDS(on) over temperature | RDS(on) increases only ~1.4× from 25 °C to 175 °C (vs. >2× for Si MOSFETs), enabling predictable thermal design and higher power density. |
| Fast intrinsic SiC body diode | 12 ns trr, 49 nC Qrr, and no tail current - eliminates snubber circuits and improves efficiency in synchronous rectification and bidirectional converters. |
| Source sensing pin (Kelvin) | Enables precise gate-source voltage regulation independent of source loop inductance, critical for stable operation above 50 A/ns di/dt. |
| Low Ciss/Crss ratio | Ciss = 680 pF, Crss = 9 pF → Miller ratio <0.014 - reduces risk of false turn-on and simplifies gate driver design. |
Applications
| Electric Traction Inverter | On-Board Charger (OBC) |
|---|---|
|
Use Scenario: High-power 3-phase inverter stage converting battery DC to variable-frequency AC for traction motor control in BEVs. IC Role / Device Role / Timing Role: Main switching device in leg topology; operates at 10–20 kHz with hard-switched PWM and high dv/dt (>5 kV/µs). Use Value: 58 mΩ RDS(on) and 29 nC Qg enable >98.5% inverter efficiency at 150 kW, while 750 V rating supports 800 V nominal battery systems. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion stage in single- or dual-stage OBCs for Level 2 and DC fast charging. IC Role / Device Role / Timing Role: Primary switch in totem-pole PFC and isolated LLC resonant converter; handles both forward and reverse conduction via intrinsic diode. Use Value: 12 ns trr and 49 nC Qrr eliminate reverse recovery losses in PFC, enabling >99% PFC efficiency and reduced EMI filtering cost. |
| High-Voltage DC/DC Converter | Traction Motor Control Unit (MCU) |
|
Use Scenario: Isolated bidirectional DC/DC converter stepping down 400–800 V battery voltage to 12–48 V for auxiliary systems in EVs and HEVs. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or dual-active-bridge topology; switches at 100–300 kHz with ZVS. Use Value: Low Coss (63 pF) and fast trr ensure reliable ZVS across full load range, reducing switching loss by >40% vs. silicon counterparts. |
Use Scenario: Integrated motor control unit housing inverter, gate driver, and protection logic for permanent magnet synchronous motors (PMSM). IC Role / Device Role / Timing Role: Final power stage switch; coordinated with isolated gate driver and current-sense amplifiers for field-oriented control (FOC) execution. Use Value: AEC-Q101 qualification and 175 °C junction rating allow placement in compact, sealed MCU enclosures without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| WOLFSPEED C3M0065070D | 700 V VDS, 65 mΩ RDS(on), TO-247-4L package, no Kelvin source pin | Lacks dedicated driver source pin; requires external Kelvin routing; lower voltage rating limits 800 V system use | Preferred where TO-247 mechanical fit is required and 700 V margin suffices; less optimal for ultra-high-density layouts. |
| ROHM SCT3060AL | 650 V VDS, 60 mΩ RDS(on), TO-263-7L package, includes Kelvin source | Lower 650 V rating restricts use to 400–600 V battery platforms; slightly higher RDS(on) at high temperature | Valid alternative for 400 V EV architectures requiring Kelvin-source capability and similar thermal performance. |
Compared with C3M0065070D and SCT3060AL, SCT060HU75G3AG uniquely combines 750 V rating, Kelvin-source pin, and industry-low 58 mΩ RDS(on) in a surface-mount HU3PAK package-enabling higher power density, better thermal management, and simplified gate drive in next-gen 800 V traction systems.
Availability
SCT060HU75G3AG is available at Aetrix Electronics and suitable for electric traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, automotive-grade reliability, and high-temperature operational continuity.
Supply support for SCT060HU75G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's STPOWER SiC portfolio, engineered specifically for high-efficiency, high-reliability power conversion in electric mobility systems-including traction drives, OBCs, and DC/DC stages-where voltage, thermal, and switching performance are mission-critical.
FAQ
What is the maximum recommended gate drive voltage for SCT060HU75G3AG?
The absolute maximum transient gate-source voltage is +25 V / –11 V (tp < 1 µs), but the recommended operating range is –5 V to +18 V. Driving above +18 V does not significantly reduce RDS(on) and increases gate oxide stress risk. ST specifies +15 V as optimal for balancing on-resistance reduction and long-term reliability.
Does SCT060HU75G3AG require a negative gate voltage for turn-off?
No, it does not require negative gate voltage for reliable turn-off. With VGS(th) min = 1.8 V and typical Miller plateau at ~4.5 V, 0 V gate drive fully turns off the device. However, –5 V is recommended to enhance noise immunity in high-di/dt environments and prevent spurious turn-on due to capacitive coupling.
How is thermal performance affected by PCB layout in HU3PAK?
Thermal resistance RthJC = 0.81 °C/W assumes full-area soldering of the exposed drain TAB to a 4-layer PCB with ≥2 oz copper and thermal vias to internal ground/power planes. Insufficient copper area or missing vias can increase effective RthJC by >50%, risking junction overheating at rated current.
Can the intrinsic body diode be used for synchronous rectification in LLC converters?
Yes-the SiC body diode exhibits 12 ns trr, 49 nC Qrr, and no reverse recovery tail, making it suitable for synchronous rectification in resonant topologies. Unlike silicon diodes, it avoids voltage spikes and EMI issues during commutation, enabling zero-voltage switching without external Schottky diodes.
SCT060HU75G3AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 750 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 18V
- Rds On (Max) @ Id, Vgs:
- 78mOhm @ 15A, 18V
- Vgs(th) (Max) @ Id:
- 4.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 18 V
- Vgs (Max):
- 4.2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 185W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- HU3PAK
SCT060HU75G3AG FAQ
1.How can I place an order for SCT060HU75G3AG through Aetrix?
Please submit a Request for Quotation (RFQ) for SCT060HU75G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SCT060HU75G3AG reliable?
The price and inventory of SCT060HU75G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT060HU75G3AG is usually 5 days.
3.What payment methods are accepted for SCT060HU75G3AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT060HU75G3AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SCT060HU75G3AG?
SCT060HU75G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SCT060HU75G3AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SCT060HU75G3AG?
For technical support, including SCT060HU75G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT060HU75G3AG requirements.
6.How does Aetrix verify that SCT060HU75G3AG is sourced from the original manufacturer or authorized distributors?
All SCT060HU75G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT060HU75G3AG meets industry standards.
7.What is the process for return or replacement of SCT060HU75G3AG?
All SCT060HU75G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT060HU75G3AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SCT060HU75G3AG part is unused and in its original packaging.
Return procedure for SCT060HU75G3AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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