STMicroelectronics SCT10N120AG

Overview

SCT10N120AG from STMicroelectronics is an AEC-Q101-qualified silicon carbide power MOSFET rated for 1200 V drain-source voltage, 12 A continuous drain current at 25 °C, and 520 mΩ typical R_DS(on) at T_J = 150 °C in the HiP247 package. It delivers robust switching performance with 22 nC total gate charge, 9–17 ns switching times, and a fast intrinsic body diode (t_rr = 16 ns) for high-efficiency motor drives and EV chargers.

For engineers reviewing the SCT10N120AG datasheet, SCT10N120AG pinout, SCT10N120AG application, or SCT10N120AG equivalent, key selection criteria include its 200 °C maximum junction temperature, tight R_DS(on) temperature stability, low C_iss/C_oss, and automotive-grade qualification for high-reliability power conversion systems.

Technical Context

This SiC MOSFET employs a wide-bandgap semiconductor structure enabling near-temperature-invariant on-resistance and minimal drift in V_GS(th) across –55 °C to 200 °C. Its intrinsic body diode exhibits low reverse recovery charge (Q_rr = 107 nC) and peak reverse recovery current (I_RRM = 12 A), supporting hard-switched and ZVS topologies.

The device operates with gate drive compatible with standard 0 V/–5 V to +20 V logic, features low gate input resistance (8 Ω), and maintains safe operating area up to 200 °C junction temperature-enabled by the HiP247 package's 1.17 °C/W junction-to-case thermal resistance.

Key Specifications

Pinout & Package

The SCT10N120AG uses the HiP247 package-a thermally enhanced variant of TO-247 with improved copper tab geometry and reduced junction-to-case thermal resistance. It features three terminals: Drain (Tab), Gate (Pin 1), and Source (Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065120K and SCT3105KL, SCT10N120AG offers the only combination of AEC-Q101 compliance, 3-pin HiP247 mechanical compatibility, and verified 200 °C operation-making it uniquely suitable for space-constrained, safety-critical automotive and industrial power modules.

Availability

SCT10N120AG is available at Aetrix Electronics and suitable for motor drives, EV onboard chargers, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability validation.

Supply support for SCT10N120AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The SCT10N120AG belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density systems operating above 600 V-targeting EV traction inverters, fast-charging infrastructure, and industrial motor control.

FAQ

What gate drive voltage is required for optimal R_DS(on) performance?

The SCT10N120AG achieves its specified 520 mΩ R_DS(on) at T_J = 150 °C with V_GS = 20 V. Minimum recommended V_GS is 15 V for full enhancement; operation below 12 V increases R_DS(on) significantly and risks thermal instability under load. A –5 V to +20 V gate drive range ensures robust noise immunity and fast turn-off.

Is the HiP247 package pin-compatible with standard TO-247?

Yes-the HiP247 package uses identical mounting hole spacing, outline dimensions, and pin positions as TO-247, allowing drop-in replacement on existing PCB footprints. However, its thicker copper tab and optimized internal die attach yield 1.17 °C/W R_th(j–case), versus ~1.6 °C/W for standard TO-247, requiring no board redesign.

Does the intrinsic body diode require external snubbing in hard-switched applications?

No-its 16 ns reverse recovery time and 107 nC Q_rr are sufficiently low to avoid destructive voltage overshoot in typical 10–20 Ω gate-drive configurations. Snubbers remain optional for ultra-high dV/dt environments (>50 V/ns), but not required for standard 800 V bus operation with 10 Ω gate resistor.

How does R_DS(on) variation impact thermal design at 200 °C junction temperature?

At T_J = 200 °C, R_DS(on) rises to 580 mΩ (typ.), a 11.5% increase over its 150 °C value-significantly less than silicon MOSFETs (>50% increase). This predictability allows fixed thermal margin allocation without iterative derating, simplifying heatsink sizing for continuous 10 A operation in sealed enclosures.