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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTH100N65G2-7AG

Name: SCTH100N65G2-7AG
Brand: STMicroelectronics
SKU: SCTH100N65G2-7AG
Price: 2.40 USD
Availability: InStock
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Part No.:: SCTH100N65G2-7AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: SCTH100N65G2-7AG.pdf

Description:: SICFET N-CH 650V 95A H2PAK-7

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Product details

Overview

SCTH100N65G2-7AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET with 650 V V_DS, 26 mΩ max R_DS(on) at 18 V V_GS, and 95 A continuous drain current at T_C = 25 °C. It features a robust intrinsic SiC body diode (t_rr = 26 ns, Q_rr = 370 nC), ultra-low gate charge (Q_g = 162 nC), and H²PAK-7 package optimized for high-power EV traction inverters.

For engineers reviewing the SCTH100N65G2-7AG datasheet, SCTH100N65G2-7AG pinout, SCTH100N65G2-7AG application, or SCTH100N65G2-7AG equivalent, key selection criteria include junction-to-case thermal resistance (0.42 °C/W), temperature-stable switching energy (E_on/E_off variation < ±5% from 25–175 °C), and source-sensing capability for precise current monitoring in high-efficiency DC/DC converters.

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate technology to achieve low specific on-resistance (20 mΩ typ. at 18 V) while maintaining rugged unclamped inductive switching (UIS) capability. Its gate threshold voltage (1.9–5.0 V) and low input capacitance (C_iss = 3315 pF) enable fast, stable switching under high dv/dt conditions typical in 800-V EV architectures.

The integrated source-sensing pin (Pin 2) enables Kelvin-source connection for accurate current sensing without R_DS(on) drift, while the H²PAK-7's isolated tab (Drain) and seven-terminal layout supports parallel operation and minimizes parasitic inductance in high-frequency (>100 kHz) OBC and inverter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 800-V battery systems with 23% voltage margin for transient overvoltage handling.
R_DS(on) max	26 mΩ at V_GS = 18 V, I_D = 50 A - Enables <1.3 W conduction loss at 50 A, critical for thermal management in compact inverters.
I_D cont.	95 A at T_C = 25 °C - Delivers high power density in H²PAK-7 footprint without forced air cooling.
Q_g	162 nC - Reduces gate driver power requirement and enables >100 kHz switching with low EMI in DC/DC stages.
t_rr	26 ns - Minimizes reverse recovery losses and eliminates external snubbers in bidirectional OBC topologies.
R_thJC	0.42 °C/W - Allows direct heatsink mounting of tab for efficient thermal path, supporting 360 W dissipation at T_C = 25 °C.
V_GS range	-10 to +22 V - Supports robust negative gate drive (-5 V) for noise immunity in high-noise automotive environments.

Pinout & Package

H²PAK-7 package with isolated copper drain tab (top-side thermal interface), 7-pin surface-mount layout, and ECOPACK2-compliant lead-free finish. Dimensions: 15.0 mm × 10.2 mm × 4.5 mm (L × W × H), recommended PCB footprint per DS12773 Figure 24.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	High-current drain connection and primary thermal path	Isolated metal tab enables direct heatsink mounting; carries full 95 A load current and dissipates >95% of device heat.
1 (Gate)	Control terminal for MOSFET channel activation	Low-inductance gate input; requires <162 nC charge for full turn-on; compatible with standard 15-V SiC gate drivers.
2 (Driver Source)	Kelvin source reference for gate driver feedback	Separate low-current source path eliminates IR drop error in gate control loop, enabling precise V_GS regulation.
3–7 (Power Source)	Main current return path for drain-source conduction	Five paralleled source terminals reduce package inductance (<1.5 nH) and improve current sharing in multi-phase layouts.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability (HTOL, TC, UHAST) across -40 to 175 °C junction range.
Source-sensing pin	Enables true Kelvin-source gate drive, eliminating source inductance impact on switching timing and stability.
Temperature-stable switching	E_on/E_off varies <±3% from 25 to 175 °C - simplifies thermal derating in high-ambient OBC modules.
Ultra-fast SiC body diode	26 ns t_rr, 24 A I_RRM - supports zero-voltage switching (ZVS) in phase-shifted full-bridge OBCs without external diodes.
Low C_oss & Crss	267 pF C_oss, 46 pF Crss - reduces capacitive turn-off loss and improves hard-switching efficiency above 50 kHz.

Applications

Electric Traction Inverter

High-Voltage DC/DC Converter

Use Scenario: Main inverter stage in 400–800 V BEV platforms converting battery DC to 3-phase AC for permanent magnet motors.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack topology operating at 8–16 kHz with field-oriented control (FOC).

Use Value: 26 mΩ R_DS(on) and 0.42 °C/W R_thJC enable >98.5% inverter efficiency at 150 kW, reducing liquid cooling requirements by 30% vs. Si IGBTs.

Use Scenario: Isolated bidirectional DC/DC stage linking 400-V traction battery and 12/48-V auxiliary systems in HEV/EV.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology operating at 100–250 kHz with phase-shift modulation.

Use Value: 26 ns t_rr and low Q_rr eliminate reverse recovery loss, enabling >97% peak efficiency and 50% smaller magnetics vs. Si-based designs.

On-Board Charger (OBC)

Traction Motor Drive Auxiliary Stage

Use Scenario: AC/DC PFC front-end and DC/DC isolation stage in 11–22 kW OBCs for Level 2 charging.

IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC and synchronous rectifier in LLC resonant converter.

Use Value: 162 nC Q_g and 3315 pF C_iss support >150 kHz operation with <500 µJ total switching energy, reducing EMI filter size by 40%.

Use Scenario: Auxiliary power supply for gate drivers, sensors, and MCU in high-voltage motor control units.

IC Role / Device Role / Timing Role: Primary switch in flyback or forward converter delivering isolated 15 V/2 A for gate driver bias rails.

Use Value: AEC-Q101 qualification and 175 °C T_J rating ensure reliable operation adjacent to 150 °C motor controller PCBs without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	650 V, 65 mΩ, TO-247-4L; higher R_DS(on), no source-sense pin	Limited to lower-power OBCs (<6 kW); requires external Kelvin connection for precision gate drive	Preferred where cost sensitivity outweighs efficiency gains and board space allows TO-247 mounting.
ROHM SCT3105KL	650 V, 105 mΩ, TO-263-7; higher R_DS(on), no AEC-Q101 certification	Restricted to industrial DC/DC; not qualified for automotive traction or OBC safety-critical functions	Acceptable for non-automotive 800-V systems where AEC-Q101 compliance is not mandated.

Compared with C3M0065065K and SCT3105KL, SCTH100N65G2-7AG delivers 2.5× lower conduction loss and integrated source sensing-enabling higher power density and simplified gate driver design in AEC-Q101–compliant EV subsystems.

Availability

SCTH100N65G2-7AG is available at Aetrix Electronics and suitable for electric traction inverters, high-voltage DC/DC converters, and on-board chargers requiring stable component supply across automotive production lifecycles.

Supply support for SCTH100N65G2-7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with >50 years of silicon expertise.

This device belongs to ST's STPOWER SiC portfolio, engineered specifically for high-efficiency, high-reliability power conversion in 400–900 V electric vehicle architectures.

FAQ

What is the maximum allowable gate-source voltage for safe operation?

The absolute maximum V_GS is -10 V to +22 V, but the recommended operational range is -5 V to +18 V per DS12773 Table 1. Operating beyond +18 V risks irreversible gate oxide damage, while -5 V ensures noise immunity during high-dv/dt commutation in traction inverters.

How does the source-sensing pin (Pin 2) improve system performance?

Pin 2 provides a dedicated Kelvin connection to the source potential, decoupling gate driver feedback from high-current source path inductance. This eliminates dynamic V_GS error during fast switching, preventing shoot-through and enabling tighter dead-time control in 100+ kHz DAB converters.

Can this MOSFET replace silicon IGBTs in existing 650-V inverter designs?

Yes-its 650 V rating, 95 A current capability, and H²PAK-7 footprint match common IGBT modules. However, gate drive voltage must be adjusted to +18 V/-5 V (not ±15 V), and snubber networks may be reduced due to near-zero Q_rr and soft SiC body diode recovery.

What thermal interface material is recommended for the drain tab?

ST recommends thermally conductive epoxy or solder (e.g., Sn96.5Ag3Cu0.5) for direct tab-to-heatsink attachment. Thermal paste alone is insufficient-R_thJC of 0.42 °C/W assumes low-contact-resistance metallic bonding, as validated in AEC-Q101 thermal cycling tests.

SCTH100N65G2-7AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:: 5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 162 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 3315 pF @ 520 V

FET Feature:: -

Power Dissipation (Max):: 360W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-7

SCTH100N65G2-7AG FAQ

1.How can I place an order for SCTH100N65G2-7AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTH100N65G2-7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTH100N65G2-7AG reliable?

The price and inventory of SCTH100N65G2-7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTH100N65G2-7AG is usually 5 days.

3.What payment methods are accepted for SCTH100N65G2-7AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTH100N65G2-7AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTH100N65G2-7AG?

SCTH100N65G2-7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTH100N65G2-7AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTH100N65G2-7AG?

For technical support, including SCTH100N65G2-7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTH100N65G2-7AG requirements.

6.How does Aetrix verify that SCTH100N65G2-7AG is sourced from the original manufacturer or authorized distributors?

All SCTH100N65G2-7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTH100N65G2-7AG meets industry standards.

7.What is the process for return or replacement of SCTH100N65G2-7AG?

All SCTH100N65G2-7AG units undergo pre-shipment inspection (PSI). If there is an issue with SCTH100N65G2-7AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTH100N65G2-7AG part is unused and in its original packaging.

Return procedure for SCTH100N65G2-7AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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