STMicroelectronics SCTH35N65G2V-7AG

Overview

SCTH35N65G2V-7AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide N-channel Power MOSFET in H²PAK-7 package, rated for 650 V V_DS, 45 A continuous drain current at T_C = 25 °C, and 67 mΩ max R_DS(on) at V_GS = 20 V. It integrates a robust intrinsic SiC body diode with 18 ns t_rr and 85 nC Q_rr, enabling high-efficiency operation in traction inverters and on-board chargers for EV/HEV systems.

For engineers reviewing the SCTH35N65G2V-7AG datasheet, SCTH35N65G2V-7AG pinout, SCTH35N65G2V-7AG application, or SCTH35N65G2V-7AG equivalent, key selection criteria include its 73 nC total gate charge, 0.72 °C/W R_thJC, 650 V breakdown voltage stability over temperature, and source-sensing capability for precision current monitoring in high-power switching stages.

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate technology to achieve low conduction loss (55 mΩ typ. at V_GS = 18 V) and minimal temperature dependence of switching energy - E_on and E_off vary less than ±15% across T_J = 25–175 °C. Its gate threshold voltage (1.8–5.0 V) and fast turn-off delay (35 ns) support precise PWM control in hard-switched topologies.

The device features a dedicated driver source (pin 2) and power source (pins 3–7) configuration that separates sensing and high-current paths, reducing parasitic inductance and improving gate drive stability. The H²PAK-7 package enables direct mounting to heatsinks via the exposed drain tab while maintaining creepage/clearance compliance for 650 V systems.

Key Specifications

Pinout & Package

H²PAK-7 package with exposed drain tab (TAB) for direct heatsink mounting, 7-pin surface-mount outline optimized for high-current automotive power stages. Thermal resistance R_thJC = 0.72 °C/W measured from junction to case (TAB).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Compared with C3M0065065K and SCT3040KL, SCTH35N65G2V-7AG uniquely combines AEC-Q101 compliance, integrated driver source pin, and 0.72 °C/W thermal resistance - making it the only option qualified for ASIL-B traction inverter sub-systems requiring <100 ns current sensing latency.

Availability

SCTH35N65G2V-7AG is available at Aetrix Electronics and suitable for electric traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply across automotive production lifecycles.

Supply support for SCTH35N65G2V-7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to ST's Automotive-grade SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in electric and hybrid vehicles - emphasizing thermal robustness, gate drive simplicity, and functional safety compliance.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is -10 V to +22 V, but ST specifies a recommended operating range of -5 V to +18 V. Operating beyond +18 V risks accelerated gate oxide degradation, especially at high junction temperatures (>150 °C). For robust 15 V logic-level drive, a +15 V / -5 V gate bias is optimal to ensure fast turn-on while maintaining >2 V noise margin against spurious turn-on.

How does the driver source (pin 2) improve system performance compared to standard 3-pin packages?

Pin 2 provides a dedicated Kelvin return path for the gate driver, isolating high-di/dt source current from the gate control loop. This reduces effective Miller capacitance, suppresses oscillation during hard switching, and enables accurate current sensing without shunt resistors. In traction inverters, this improves torque ripple by ≤0.8% and extends gate driver IC lifetime by 3× versus conventional 3-pin layouts.

Can this device replace silicon IGBTs in existing 650 V inverter designs without layout changes?

No - the H²PAK-7 footprint differs significantly from standard TO-247 or HPAK packages, requiring PCB redesign for pad layout, thermal vias, and gate routing. Additionally, its lower gate charge demands reduced gate resistor values (e.g., 4.7 Ω vs. 15 Ω), and its faster switching necessitates stricter layout rules for loop inductance (<15 nH). A full electrical and thermal revalidation is required.

What is the safe operating area (SOA) limitation at T_C = 100 °C and V_DS = 400 V?

At T_C = 100 °C and V_DS = 400 V, the SOA is limited by R_DS(on) conduction, allowing up to 28 A continuous current (per Figure 1, 10 ms pulse curve). Exceeding this draws junction temperature beyond 175 °C within milliseconds. For 45 A operation at this voltage, forced cooling reducing T_C to ≤65 °C is mandatory to stay within SOA boundaries.