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STMicroelectronics SCTH40N120G2V-7
- Part No.:
- SCTH40N120G2V-7
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
SCTH40N120G2V-7.pdf
- Description:
- SILICON CARBIDE POWER MOSFET 120
- Quantity:
- Payment:
- Shipping:
Inventory:8,172
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Product details
Overview
SCTH40N120G2V-7 from STMicroelectronics is a silicon carbide (SiC) N-channel Power MOSFET in H²PAK-7 package, rated for 1200 V drain-source voltage, 100 mΩ max RDS(on) at 20 A/18 V, and 36 A continuous drain current at TC = 25 °C. It serves as a high-efficiency, high-voltage switching element in hard-switched and resonant topologies operating up to 175 °C junction temperature.
For engineers reviewing the SCTH40N120G2V-7 datasheet, SCTH40N120G2V-7 pinout, SCTH40N120G2V-7 application, or SCTH40N120G2V-7 equivalent, key selection criteria include its 62 mΩ typical on-resistance, 61 nC total gate charge, 15 ns reverse recovery time, Kelvin source configuration for gate drive stability, and robust body diode performance in DC-DC and motor control designs.
Technical Context
This SiC MOSFET employs ST's second-generation trench-gate technology, delivering low conduction loss with minimal temperature dependence-RDS(on) increases only ~1.6× from 25 °C to 175 °C. Its intrinsic body diode exhibits 3.3 V forward drop at 20 A and ultra-fast 15 ns trr, enabling zero-voltage switching (ZVS) without external diodes in bridge configurations.
The device integrates a dedicated Kelvin source terminal (Pin 2) to eliminate source inductance impact on gate control, ensuring stable turn-on/turn-off timing under high di/dt conditions. Gate drive operates within -5 V to +18 V, with threshold voltage tightly distributed between 1.9 V and 4.9 V, supporting reliable logic-level compatibility and noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 1200 V - Supports primary-side switching in 1000 V-class AC/DC and HVDC systems without derating. |
| RDS(on) max | 100 mΩ @ 20 A, 18 V, 25 °C - Enables <1.2 W conduction loss at 20 A, critical for >99% efficiency in high-power SMPS. |
| Qg | 61 nC - Reduces gate driver power demand and enables fast 12.9 ns td(on) with low-RG drive. |
| trr | 15 ns - Minimizes commutation loss and eliminates need for external anti-parallel SiC Schottky diodes in half-bridge inverters. |
| TJ max | 175 °C - Allows compact heatsink design and operation in sealed industrial enclosures without forced air. |
| RthJC | 0.63 °C/W - Enables 238 W power dissipation at TC = 25 °C, supporting high-current pulse handling in motor drives. |
| ID pulsed | 100 A - Sustains short-circuit events in IGBT-replacement applications with defined SOA up to 10 ms. |
Pinout & Package
H²PAK-7 is a surface-mount, thermally enhanced package with isolated drain tab (TAB), single gate (Pin 1), driver source (Pin 2), and parallel power source terminals (Pins 3–7). The metal tab provides low-inductance, high-current drain connection and direct thermal path to PCB copper or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB (Drain) | Main power drain connection | Exposed copper pad for low-inductance, high-current return path and primary thermal interface to heatsink. |
| 1 (Gate) | Control input | Standard gate drive node; requires negative bias (-5 V) for robust noise immunity during high dv/dt switching. |
| 2 (Driver Source) | Kelvin source reference | Provides gate driver ground reference independent of power loop inductance, eliminating Miller-induced false turn-on. |
| 3–7 (Power Source) | Main source current return | Five parallel pins minimize source inductance and resistive loss in high-current (>20 A) conduction paths. |
Key Features
| Feature | Design Value |
|---|---|
| Source Kelvin pin (Pin 2) | Eliminates source inductance coupling into gate loop, enabling stable 100+ kHz switching with standard gate drivers. |
| Ultra-low Qgd/Qgs ratio | 25 nC / 13 nC = 1.92 - Reduces Miller plateau duration and improves controllability during hard switching transitions. |
| Temperature-stable RDS(on) | Normalized RDS(on) = 1.0 at 25 °C, 1.6 at 175 °C - Enables predictable loss budgeting across full industrial temperature range. |
| Robust intrinsic body diode | trr = 15 ns, Qrr = 77 nC, IRRM = 9 A - Supports bidirectional current flow in LLC resonant converters without external diode. |
| High dv/dt immunity | Rated for >50 V/ns operation per datasheet SOA curves - Ensures reliability in fast-switching GaN/SiC hybrid topologies. |
Applications
| Industrial Motor Drives | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: Three-phase inverter stage in 10–50 kW servo and pump drives operating at 600–1000 V DC bus. IC Role / Device Role / Timing Role: High-side/low-side switching element with synchronized gate control and integrated body diode commutation. Use Value: Enables 20 kHz PWM with <0.5% conduction loss increase over temperature, reducing heatsink mass by 35% vs. Si IGBTs. |
Use Scenario: Primary-side switch in isolated 1–3 kW telecom and EV charging DC-DC modules with 800 V input. IC Role / Device Role / Timing Role: Hard-switched active clamp flyback or phase-shifted full-bridge main switch. Use Value: Achieves 98.2% peak efficiency at 20 A load due to 62 mΩ RDS(on) and 398 µJ Eon at 800 V. |
| Switched-Mode Power Supplies | Renewable Energy Inverters |
Use Scenario: PFC boost switch in 3–10 kW server PSU and industrial UPS front-ends. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch with body diode conducting during zero-current intervals. Use Value: Delivers 99.1% PFC efficiency at full load using 12.9 ns td(on) and 7.7 ns tf to minimize dead-time losses. |
Use Scenario: String-level DC optimizer and central inverter DC link switching in 1500 V PV systems. IC Role / Device Role / Timing Role: Bidirectional energy transfer switch leveraging low-loss intrinsic diode for MPPT bypass paths. Use Value: Supports 1500 V system voltage with 1200 V rating and 175 °C TJ, extending field lifetime by 2.3× vs. 150 °C-rated Si MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0065120K (Wolfspeed) | 1200 V, 65 mΩ typ., 38 A, TO-247-4L; higher RDS(on) tempco (1.8×), no Kelvin source. | Lacks dedicated driver source pin; requires careful layout to avoid gate oscillation above 50 kHz. | Prefer when legacy TO-247 footprint compatibility is required and gate drive layout allows tight source loop control. |
| IXFH40N120P (IXYS) | 1200 V, 120 mΩ max, 40 A, TO-247-3L; Si-based; 150 °C TJ max; 3× higher Qg. | Higher conduction and switching loss; unsuitable for >50 kHz operation without oversized heatsink. | Select only for cost-sensitive, lower-frequency (<30 kHz) industrial drives where SiC ROI is not justified. |
Compared with C3M0065120K and IXFH40N120P, SCTH40N120G2V-7 delivers superior gate drive stability via Kelvin source, lower switching energy (42 µJ Eoff vs. ≥120 µJ), and extended thermal margin-enabling smaller magnetics and passive components in high-density 100+ kHz designs.
Availability
SCTH40N120G2V-7 is available at Aetrix Electronics and suitable for high-voltage switching mode power supplies, industrial motor control inverters, and renewable energy DC-DC conversion requiring stable component supply and long-term lifecycle support.
Supply support for SCTH40N120G2V-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
SCTH40N120G2V-7 belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in 1200 V systems where thermal robustness and switching speed are critical.
FAQ
What gate drive voltage range is recommended for reliable operation?
The SCTH40N120G2V-7 specifies -5 V to +18 V as recommended operational gate-source voltage. A minimum -5 V negative turn-off bias is required to ensure robust immunity against parasitic turn-on during high dv/dt switching. Driving outside this range risks gate oxide degradation or unreliable channel control, especially at elevated temperatures.
How does the Kelvin source pin (Pin 2) improve switching performance?
Pin 2 provides a dedicated low-inductance reference for the gate driver's source node, decoupling it from high-current power source paths (Pins 3–7). This eliminates voltage spikes induced by source inductance during switching transients, preventing false turn-on and enabling stable 100+ kHz operation without complex gate drive compensation networks.
Can this device replace silicon IGBTs in existing 1200 V inverter designs?
Yes-SCTH40N120G2V-7 supports direct replacement in many 1200 V IGBT-based motor drives and UPS systems, provided gate drive circuitry is updated to deliver ±5 V/18 V levels and layout incorporates Kelvin source routing. Its 100 A pulsed rating and SOA curve support short-circuit withstand times comparable to 40 A IGBTs.
What is the maximum allowable case temperature for continuous 36 A operation?
Continuous 36 A drain current is rated only at TC = 25 °C. At TC = 100 °C, the datasheet limits continuous current to 25 A due to thermal constraints. To sustain 36 A continuously, the case temperature must be maintained ≤45 °C using active cooling or large copper area, verified via RthJC = 0.63 °C/W and power dissipation modeling.
SCTH40N120G2V-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id:
- 4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 61 nC @ 18 V
- Vgs (Max):
- +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1233 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 238W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H2PAK-7
SCTH40N120G2V-7 FAQ
1.How can I place an order for SCTH40N120G2V-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for SCTH40N120G2V-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SCTH40N120G2V-7 reliable?
The price and inventory of SCTH40N120G2V-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTH40N120G2V-7 is usually 5 days.
3.What payment methods are accepted for SCTH40N120G2V-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTH40N120G2V-7 transactions.
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SCTH40N120G2V-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SCTH40N120G2V-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SCTH40N120G2V-7?
For technical support, including SCTH40N120G2V-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTH40N120G2V-7 requirements.
6.How does Aetrix verify that SCTH40N120G2V-7 is sourced from the original manufacturer or authorized distributors?
All SCTH40N120G2V-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTH40N120G2V-7 meets industry standards.
7.What is the process for return or replacement of SCTH40N120G2V-7?
All SCTH40N120G2V-7 units undergo pre-shipment inspection (PSI). If there is an issue with SCTH40N120G2V-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SCTH40N120G2V-7 part is unused and in its original packaging.
Return procedure for SCTH40N120G2V-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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