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STMicroelectronics SCTH40N120G2V7AG
- Part No.:
- SCTH40N120G2V7AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Datasheet:
-
SCTH40N120G2V7AG.pdf
- Description:
- SICFET N-CH 1200V 33A H2PAK-7
- Quantity:
- Payment:
- Shipping:
Inventory:5,870
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Product details
Overview
SCTH40N120G2V7AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET designed for high-voltage switching in electric vehicle traction inverters and on-board chargers. It delivers 1200 V drain-source voltage, 75 mΩ typical RDS(on) at 18 V gate drive, 33 A continuous drain current at 25 °C, and features a robust intrinsic SiC body diode with 19 ns reverse recovery time.
For engineers reviewing the SCTH40N120G2V7AG datasheet, SCTH40N120G2V7AG pinout, SCTH40N120G2V7AG application, or SCTH40N120G2V7AG equivalent, key selection criteria include its H²PAK-7 package thermal resistance (0.6 °C/W), low 63 nC total gate charge, and stable switching energy across junction temperature (Eon = 235 µJ, Eoff = 77 µJ at 800 V).
Technical Context
This device implements ST's second-generation SiC MOSFET technology, enabling low specific on-resistance and near-temperature-invariant switching loss. Its gate threshold voltage (1.9–5.0 V) and 18 V maximum recommended gate drive support robust control in high-noise EV power stages.
The integrated SiC body diode operates with 3.4 V forward voltage at 20 A and exhibits minimal reverse recovery charge (132 nC), eliminating need for external anti-parallel diodes in bidirectional topologies like dual-active-bridge DC/DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 1200 V - supports 800 V DC-link systems with 50 % voltage margin for transient overvoltage in EV traction applications |
| RDS(on) max | 105 mΩ at 20 A, 25 °C - enables <1.6 W conduction loss at 33 A, critical for thermal management in compact inverters |
| Qg | 63 nC - reduces gate driver power requirement and allows use of lower-cost isolated gate drivers |
| Eoff | 77 µJ at 800 V, 20 A - contributes to <1.5 kW switching loss at 10 kHz in 100 kW inverter stage |
| RthJC | 0.6 °C/W - permits 250 W dissipation with ≤150 °C case-to-junction delta, enabling direct heatsink mounting without thermal interface pads |
| VSD | 3.4 V at 20 A - defines forward conduction loss during synchronous rectification or freewheeling in half-bridge configurations |
| trr | 19 ns - eliminates tail current, reducing diode switching loss by >90 % vs silicon IGBTs in same topology |
Pinout & Package
H²PAK-7 package: thermally enhanced surface-mount outline with isolated tab (drain), seven terminals including dedicated driver source (pin 2) and power source (pins 3–7) for Kelvin source sensing and low-inductance current return.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB (Drain) | Main high-side power path and thermal interface | Exposed copper tab provides primary heat transfer path to heatsink; electrically connected to drain potential |
| 1 (Gate) | Control input for MOSFET channel | Low-impedance gate terminal optimized for <63 nC charge injection; requires negative turn-off bias (-5 V) for noise immunity |
| 2 (Driver Source) | Kelvin source reference for gate driver feedback | Separates gate loop from high-current source return, eliminating source inductance impact on switching speed and stability |
| 3–7 (Power Source) | Main current return path for load current | Parallel low-inductance source connections minimize voltage spikes during 200 A/µs di/dt transients in traction inverters |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain use with 175 °C operating junction temperature and extended reliability testing per JEDEC standards |
| Very fast intrinsic body diode | 19 ns trr, 132 nC Qrr - enables zero-voltage switching in soft-switched topologies without external diode |
| Extremely low gate charge | 63 nC total gate charge - reduces gate driver losses by >40 % vs first-gen SiC MOSFETs at same voltage rating |
| Source sensing pin | Dedicated pin 2 for Kelvin source connection - maintains precise gate-source voltage control under high di/dt, preventing false turn-on |
| Thermal resistance | 0.6 °C/W RthJC - supports >200 W continuous power dissipation with standard forced-air heatsinking |
Applications
| Electric Traction Inverter | High-Voltage DC/DC Converter |
|---|---|
|
Use Scenario: Main inverter stage converting battery DC to 3-phase AC for permanent magnet motor drive in BEV powertrain. IC Role / Device Role / Timing Role: High-side switch in 6-pack half-bridge configuration operating at 8–16 kHz PWM frequency with 800 V DC-link. Use Value: Low RDS(on) and temperature-stable switching loss reduce inverter thermal footprint by 35 % vs silicon IGBT solution at same power level. |
Use Scenario: Primary-side switch in dual-active-bridge (DAB) converter stepping down 800 V battery to 400 V auxiliary bus for HVAC and infotainment. IC Role / Device Role / Timing Role: Unidirectional power switch in phase-shifted full-bridge topology with ZVS operation enabled by fast body diode. Use Value: 19 ns trr ensures reliable zero-voltage switching across full load range, improving peak efficiency to 98.2 %. |
| On-Board Charger (OBC) | Traction Motor Regenerative Braking |
|
Use Scenario: Active rectifier stage in bidirectional OBC converting AC grid to variable DC for battery charging and discharging. IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in totem-pole PFC + LLC resonant stage operating up to 100 kHz. Use Value: 3.4 V VSD and low Coss (56 pF) enable high-frequency operation with <0.5 % conduction loss penalty in reverse conduction mode. |
Use Scenario: Inverter operating in regenerative mode to convert motor back-EMF into battery-charging current during deceleration. IC Role / Device Role / Timing Role: Bidirectional power switch leveraging intrinsic SiC body diode for freewheeling current path during braking intervals. Use Value: Robust 92 A pulsed drain current rating and 1200 V blocking capability sustain 150 kW regen bursts without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0065120K (Wolfspeed) | 1200 V, 65 mΩ typ., 42 A, TO-247-4L package, higher RthJC (0.95 °C/W) | Larger footprint and higher thermal resistance require larger heatsink volume | Preferred where higher current rating justifies increased thermal design complexity |
| IMW120R090M1H (Infineon) | 1200 V, 90 mΩ typ., 32 A, H2PAK-7 package, 75 nC Qg, slower trr (25 ns) | Higher gate charge increases driver loss; slightly slower diode limits ZVS range in DAB | Selected when cost sensitivity outweighs marginal efficiency gain of ST's faster diode |
Compared with C3M0065120K and IMW120R090M1H, SCTH40N120G2V7AG offers optimal balance of low thermal resistance (0.6 °C/W), fast diode (19 ns trr), and compact H²PAK-7 footprint-making it preferred for space-constrained EV inverter modules requiring <150 mm² board area per switch.
Availability
SCTH40N120G2V7AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, high-voltage DC/DC converters, and on-board chargers requiring stable component supply across multi-year automotive production programs.
Supply support for SCTH40N120G2V7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing and R&D operations across Europe, Asia, and the Americas.
This device belongs to ST's Automotive-grade SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in electric vehicle drivetrains and charging infrastructure.
FAQ
What is the maximum allowable gate-source voltage for safe operation?
The absolute maximum gate-source voltage is -11 V to +25 V for pulsed conditions (25 ns overshoot), but the recommended operating range is -5 V to +18 V. Exceeding +18 V risks oxide degradation over time, while gate drive below -5 V may not ensure full turn-off under high dv/dt conditions in inverter leg configurations.
How does the Kelvin source pin (pin 2) improve switching performance?
Pin 2 provides a dedicated low-inductance path for gate driver feedback, isolating the gate control loop from high di/dt source current transients. This prevents voltage drop across source inductance from distorting effective VGS, eliminating spurious turn-on and enabling consistent 11 ns turn-on delay and 13 ns fall time across temperature and load.
Is this device suitable for hard-switched topologies above 20 kHz?
Yes-its 63 nC Qg, 15 nC Qgs, and 20 nC Qgd enable clean 10–25 kHz hard-switching in three-phase inverters. The 1230 pF Ciss and 15 pF Crss yield favorable Miller ratio (Crss/Ciss = 1.2 %), minimizing voltage-dependent gate drive requirements and ensuring stable operation without snubbers.
What thermal interface material is recommended for the H²PAK-7 tab?
ST specifies minimum thermal interface material (TIM) thickness of 50 µm and recommends phase-change pads (e.g., Henkel Gap Pad VOX 300) or silver-filled epoxy (e.g., MG8331) achieving ≥1.5 W/m·K effective conductivity. Mechanical clamping pressure must be 30–60 psi to maintain 0.6 °C/W RthJC performance in production assemblies.
SCTH40N120G2V7AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 18 V
- Vgs (Max):
- +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1230 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H2PAK-7
SCTH40N120G2V7AG FAQ
1.How can I place an order for SCTH40N120G2V7AG through Aetrix?
Please submit a Request for Quotation (RFQ) for SCTH40N120G2V7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SCTH40N120G2V7AG reliable?
The price and inventory of SCTH40N120G2V7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTH40N120G2V7AG is usually 5 days.
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5.How can I obtain technical support or documentation for SCTH40N120G2V7AG?
For technical support, including SCTH40N120G2V7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTH40N120G2V7AG requirements.
6.How does Aetrix verify that SCTH40N120G2V7AG is sourced from the original manufacturer or authorized distributors?
All SCTH40N120G2V7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTH40N120G2V7AG meets industry standards.
7.What is the process for return or replacement of SCTH40N120G2V7AG?
All SCTH40N120G2V7AG units undergo pre-shipment inspection (PSI). If there is an issue with SCTH40N120G2V7AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SCTH40N120G2V7AG part is unused and in its original packaging.
Return procedure for SCTH40N120G2V7AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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