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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTH60N120G2-7

Name: SCTH60N120G2-7
Brand: STMicroelectronics
SKU: SCTH60N120G2-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTH60N120G2-7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: SCTH60N120G2-7.pdf

Description:: SICFET N-CH 1200V 60A H2PAK-7

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Product details

Overview

SCTH60N120G2-7 from STMicroelectronics is a silicon carbide (SiC) N-channel Power MOSFET in H²PAK-7 package, rated for 1200 V drain-source voltage, 52 mΩ max R_DS(on) at 18 V V_GS, and 60 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency, high-voltage switching element in hard-switched and resonant topologies, featuring ultra-low gate charge (94 nC), fast switching (t_d(off) = 32 ns), and robust intrinsic body diode for bidirectional conduction in DC-DC converters.

For engineers reviewing the SCTH60N120G2-7 datasheet, SCTH60N120G2-7 pinout, SCTH60N120G2-7 application, or SCTH60N120G2-7 equivalent, key selection criteria include its 1200 V blocking capability, 35 mΩ typical R_DS(on), 177 A pulsed drain current, 0.38 °C/W junction-to-case thermal resistance, and SiC-specific reverse recovery performance (Q_rr = 102 nC, t_rr = 17 ns).

Technical Context

This device implements ST's second-generation SiC MOSFET technology, delivering stable switching loss across temperature (E_on/E_off variation < ±15% from −55 °C to 175 °C) and near-zero dependence of R_DS(on) on V_GS above threshold. Its gate threshold voltage (1.9–5.0 V) enables robust noise immunity while supporting standard 15 V gate drivers.

The integrated source-sensing pin (Pin 2) enables Kelvin-source connection for precise gate drive control and reduced dynamic losses. The H²PAK-7 package features a thermally optimized copper tab (Drain) and seven terminals including three parallel power source pins (Pins 3–5), enabling low-inductance, high-current PCB layouts essential for >100 kHz SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables use in 800 V DC bus systems with 50% voltage margin for surge and ringing.
R_DS(on) max	52 mΩ at V_GS = 18 V, I_D = 30 A - Delivers < 1.5 W conduction loss at 60 A, critical for high-power density converters.
Q_g	94 nC - Reduces gate driver power requirement and enables faster turn-on/turn-off with standard 1–4.7 Ω gate resistors.
t_rr	17 ns - Minimizes reverse recovery energy (E_rr ≈ 1.3 µJ) and eliminates external anti-parallel diode in many topologies.
R_thJC	0.38 °C/W - Supports >300 W continuous dissipation with moderate heatsinking, enabling compact thermal design.
I_DM	177 A - Allows short-circuit withstand capability up to 10 µs in motor drive fault conditions.
V_SD	3 V at I_SD = 30 A - Low forward drop of intrinsic SiC body diode reduces freewheeling losses vs. silicon alternatives.

Pinout & Package

H²PAK-7 is a surface-mount, thermally enhanced package with isolated gate and Kelvin-source terminals. The copper drain tab (TAB) is soldered directly to the PCB for optimal thermal transfer and low-inductance high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	High-current drain node / thermal interface	Exposed copper pad carrying full load current and conducting heat to PCB copper pour or heatsink.
1 (Gate)	Control input	Standard MOSFET gate terminal; requires low-impedance drive due to 94 nC Q_g.
2 (Driver source)	Kelvin source sense	Provides dedicated low-noise source reference for gate driver IC feedback, eliminating source inductance impact on switching.
3, 4, 5 (Power source)	Main source return path	Three parallel pins reduce current density and parasitic inductance in high-di/dt paths (e.g., LLC resonant tanks).
6, 7 (Power source)	Main source return path	Additional parallel source connections for >100 A system-level current sharing and layout symmetry.

Key Features

Feature	Design Value
Ultra-low Q_g and C_iss	94 nC total gate charge and 1969 pF input capacitance enable 100+ kHz operation with minimal driver loss.
Source sensing pin	Pin 2 provides Kelvin-source connection to gate driver IC, eliminating source inductance-induced oscillation and improving dV/dt immunity.
Robust intrinsic SiC body diode	17 ns t_rr, 102 nC Q_rr, and 10 A I_RRM allow reliable synchronous rectification without external diode in phase-shifted full-bridge.
Temperature-stable switching	E_on and E_off vary < ±10% over −55 °C to 175 °C, simplifying thermal derating in industrial motor drives.

Applications

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: 3-phase inverter stage in 15–75 kW servo drives operating from 690 V AC mains via active front-end rectifier.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT-replacement topology, switching at 10–20 kHz with soft commutation.

Use Value: 67 mΩ R_DS(on) at 175 °C enables 30% lower conduction loss than comparable 1200 V Si IGBTs, reducing heatsink size by 40%.

Use Scenario: Primary-side switch in 3.3 kW isolated bi-directional DC-DC converter for EV charging infrastructure (800 V battery ↔ 400 V auxiliary bus).

IC Role / Device Role / Timing Role: Hard-switched 100 kHz PWM transistor in phase-shifted full-bridge, handling 40 A peak primary current.

Use Value: 17 ns t_rr eliminates reverse recovery tail, cutting switching loss by 35% vs. silicon MOSFETs and enabling ZVS over full load range.

Server PSU Front-End

Renewable Energy Inverters

Use Scenario: Totem-pole PFC stage in 3 kW telecom/server power supply operating at 120 kHz with 800 V DC link.

IC Role / Device Role / Timing Role: Fast-switching AC-side MOSFET in continuous conduction mode (CCM), requiring bidirectional conduction capability.

Use Value: 3 V V_SD and 102 nC Q_rr reduce conduction and recovery losses by 22% compared to discrete SiC diode + MOSFET solutions.

Use Scenario: DC string switch and MPPT stage in 1500 V solar central inverters, where high blocking voltage and reliability are mandatory.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch isolating PV strings during ground-fault events or maintenance.

Use Value: 1200 V V_DS rating with 1.06× normalized breakdown at −55 °C ensures safe operation under cold-start overvoltage transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	1200 V, 65 mΩ typ., 52 A, TO-247-4L package, Q_g = 72 nC	Larger footprint, higher R_thJC (0.55 °C/W), no Kelvin source pin	Preferred for legacy TO-247 board reuse; requires external Kelvin routing for same gate control fidelity.
IXFH60N120X2 (IXYS)	1200 V, 55 mΩ typ., 60 A, TO-247-4L, Q_g = 105 nC, t_rr = 25 ns	Higher Q_g and slower diode recovery increase driver loss and EMI risk	Acceptable for lower-frequency (<50 kHz) motor drives where diode speed is less critical.

Compared with C3M0065120K and IXFH60N120X2, SCTH60N120G2-7 offers superior thermal performance (0.38 °C/W), integrated Kelvin source for cleaner gate control, and fastest body diode (17 ns t_rr), making it optimal for high-frequency, high-density power conversion where layout parasitics dominate.

Availability

SCTH60N120G2-7 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SCTH60N120G2-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in 800–1500 V systems where silicon alternatives fail to meet efficiency, density, or thermal targets.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is −10 V to +22 V, but ST specifies −5 V to +18 V as the recommended operational range. Operating within this window ensures long-term gate oxide integrity and avoids threshold shift or premature wear-out, especially under repeated high-dV/dt conditions common in hard-switched topologies.

Can the source-sensing pin (Pin 2) be left unconnected?

No - Pin 2 must be connected to the gate driver's source-sense input (e.g., UCC5870-SEP DRVSS pin). Leaving it floating degrades switching waveform fidelity, increases overshoot/ringing, and risks false turn-on due to source inductance coupling. It is not optional for achieving specified E_on/E_off and SOA performance.

How does the device perform at elevated junction temperatures?

At T_J = 175 °C, R_DS(on) rises to 67 mΩ (1.9× room-temp value), but switching energies remain stable (E_on and E_off vary < ±8%). This allows predictable thermal design in sealed enclosures, unlike silicon MOSFETs whose E_off can double at high temperature.

Is the H²PAK-7 package RoHS and REACH compliant?

Yes - the H²PAK-7 package carries ECOPACK2 compliance, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full material declarations and substance thresholds are published in ST's official ECOPACK documentation referenced in DS13621 Rev 2, Section 3.

SCTH60N120G2-7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 94 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 1969 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 390W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-7

SCTH60N120G2-7 FAQ

1.How can I place an order for SCTH60N120G2-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTH60N120G2-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTH60N120G2-7 reliable?

The price and inventory of SCTH60N120G2-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTH60N120G2-7 is usually 5 days.

3.What payment methods are accepted for SCTH60N120G2-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTH60N120G2-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTH60N120G2-7?

SCTH60N120G2-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTH60N120G2-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTH60N120G2-7?

For technical support, including SCTH60N120G2-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTH60N120G2-7 requirements.

6.How does Aetrix verify that SCTH60N120G2-7 is sourced from the original manufacturer or authorized distributors?

All SCTH60N120G2-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTH60N120G2-7 meets industry standards.

7.What is the process for return or replacement of SCTH60N120G2-7?

All SCTH60N120G2-7 units undergo pre-shipment inspection (PSI). If there is an issue with SCTH60N120G2-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTH60N120G2-7 part is unused and in its original packaging.

Return procedure for SCTH60N120G2-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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