STMicroelectronics SCTH70N120G2V-7

Overview

SCTH70N120G2V-7 from STMicroelectronics is a silicon carbide (SiC) N-channel power MOSFET in H²PAK-7 package, rated for 1200 V drain-source voltage, 30 mΩ max R_DS(on) at 18 V_GS, and 90 A continuous drain current at T_C = 25 °C. It delivers ultra-low gate charge (150 nC), fast switching (t_d(off) = 36 ns), and robust intrinsic SiC body diode performance (t_rr = 11.16 ns), enabling high-efficiency operation in high-voltage DC-DC converters and industrial motor drives.

For engineers reviewing the SCTH70N120G2V-7 datasheet, SCTH70N120G2V-7 pinout, SCTH70N120G2V-7 application, or SCTH70N120G2V-7 equivalent, key selection criteria include its 1200 V blocking capability, temperature-stable R_DS(on) behavior up to 175 °C, low C_iss (3540 pF), integrated source sensing pin (Pin 2), and H²PAK-7 thermal performance (R_thJC = 0.32 °C/W).

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate SiC technology, delivering stable switching energy across junction temperature (–25 °C to 175 °C) and near-zero variation in E_on/E_off with temperature. Its gate threshold voltage (1.90–4.90 V) and low input capacitance enable reliable drive with standard 15 V gate drivers while maintaining SOA integrity under hard-switching conditions.

The device integrates a Kelvin source connection (Pin 2) for accurate gate-drive referencing, decoupling power and sensing paths to minimize parasitic inductance impact on switching waveform fidelity. Its intrinsic body diode exhibits low forward voltage (2.7 V at 50 A) and minimal reverse recovery charge (Q_rr = 276 nC), eliminating need for external anti-parallel SiC diodes in bridge configurations.

Key Specifications

Pinout & Package

H²PAK-7 is a surface-mount, thermally enhanced package with isolated tab (Drain), seven terminals, and integrated Kelvin source sensing. The metal tab serves as the primary Drain connection and thermal path to PCB copper; Pin 2 is dedicated Driver Source (Kelvin), enabling precise gate loop control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065120K and UF3SC120016K4S, SCTH70N120G2V-7 uniquely balances low R_DS(on), ultra-low Q_g, and integrated Kelvin source-making it optimal for high-frequency, high-reliability industrial and EV power stages where gate loop fidelity and thermal stability are critical.

Availability

SCTH70N120G2V-7 is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' qualified production lines.

Supply support for SCTH70N120G2V-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, microcontrollers, and wide-bandgap devices.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, automotive, and renewable energy systems operating above 650 V.

FAQ

What gate drive voltage is recommended for optimal R_DS(on) and reliability?

ST specifies V_GS = 18 V for minimum R_DS(on) (21 mΩ typ.), with absolute maximum V_GS = 22 V and recommended operating range of –5 V to +18 V. A gate drive of +15 V/–5 V is widely adopted to ensure robust turn-on while limiting Miller-induced false turn-on during high dv/dt transitions. Exceeding +18 V provides negligible R_DS(on) improvement but increases gate oxide stress risk.

How does the Kelvin source pin (Pin 2) affect PCB layout requirements?

Pin 2 must be routed separately from the main power source traces (Pins 3–7) and connected directly to the gate driver's source return, forming a low-inductance Kelvin loop. This prevents source inductance from modulating effective V_GS during switching, ensuring consistent timing and minimizing voltage overshoot. A dedicated small-width trace with minimal length and no shared vias is mandatory.

Can this device replace IGBTs in existing 1200 V inverter designs?

Yes-its 1200 V rating, 90 A current capability, and SOA support direct IGBT replacement in 600–800 V DC bus systems. However, gate drive must be updated to accommodate faster switching (reduced R_G, tighter layout) and negative turn-off bias (–5 V) to suppress Miller turn-on. Thermal interface design must also account for lower R_thJC (0.32 °C/W vs. typical IGBT 0.5–0.8 °C/W).

What is the safe operating area (SOA) limitation at T_C = 100 °C?

At T_C = 100 °C, the continuous drain current rating drops to 63 A per datasheet Table 1. The SOA curve (Figure 1) shows single-pulse operation remains limited by R_DS(on) up to ~100 V and 100 A at 100 µs pulse width, but longer pulses (>1 ms) are constrained by thermal resistance and must stay within the 63 A derated envelope to avoid junction overheating beyond 175 °C.