STMicroelectronics SCTL35N65G2V

Overview

SCTL35N65G2V from STMicroelectronics is a silicon carbide (SiC) Power MOSFET designed for high-voltage, high-efficiency switching in primary-side power stages. It delivers 650 V drain-source voltage rating, 67 mΩ maximum R_DS(on) at 20 V_GS, and 40 A continuous drain current at T_C = 25 °C, housed in a thermally optimized PowerFLAT 8x8 HV package. It is deployed in high-frequency LLC resonant converters and industrial PFC circuits where low switching loss and temperature-stable performance are critical.

For engineers reviewing the SCTL35N65G2V datasheet, SCTL35N65G2V pinout, SCTL35N65G2V application, or SCTL35N65G2V equivalent, key selection criteria include its 1370 pF input capacitance, 30 pF reverse transfer capacitance, 73 nC total gate charge, robust 18 ns reverse recovery time, and source-sensing pin architecture enabling precise current monitoring in high-side configurations.

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate SiC technology, delivering near-flat switching energy versus junction temperature-E_on and E_off vary by less than ±15% across –55 °C to 175 °C. Its intrinsic body diode exhibits 3.3 V forward voltage at 20 A and ultra-fast 18 ns t_rr, eliminating need for external anti-parallel diodes in hard-switched topologies.

The device integrates a dedicated driver source (pin 2) and power source (pins 3 & 4) configuration to separate high-di/dt return paths, minimizing gate loop inductance and improving noise immunity. Gate threshold voltage is tightly distributed (1.8–5.0 V), with normalized V_GS(th) decreasing to 0.6× at 175 °C-enabling stable turn-on margin under thermal stress.

Key Specifications

Pinout & Package

Package: PowerFLAT 8x8 HV type A - 8 mm × 8 mm exposed copper thermal pad, 0.85 mm nominal height, RoHS-compliant ECOPACK2, optimized for double-sided cooling and PCB-level thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Compared with C3M0065090D and SCT3040KLH, SCTL35N65G2V uniquely combines source-sensing capability, 8x8 mm footprint, and temperature-invariant switching in a single package-making it optimal for high-density, thermally constrained industrial and telecom power supplies.

Availability

SCTL35N65G2V is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SCTL35N65G2V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and wide-bandgap devices with over 45 years of manufacturing excellence.

SCTL35N65G2V belongs to ST's second-generation SiC Power MOSFET product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in industrial, computing, and EV infrastructure applications.

FAQ

What is the recommended gate drive voltage range for SCTL35N65G2V?

The absolute maximum gate-source voltage is –10 V to +22 V, but ST specifies –5 V to +20 V as the recommended operating range. A –5 V turn-off bias is strongly advised to prevent spurious turn-on due to dv/dt coupling, especially given its 30 pF Crss. Driving within this window ensures reliable switching while preserving gate oxide integrity over lifetime.

Does SCTL35N65G2V require an external freewheeling diode?

No. Its intrinsic body diode has 3.3 V forward voltage at 20 A and only 18 ns reverse recovery time with 7 A peak recovery current, making it fully capable of handling bidirectional current in totem-pole PFC and synchronous rectification. External diodes add parasitic inductance and reduce efficiency.

How does the PowerFLAT 8x8 HV package improve thermal performance?

The package features an 8 mm × 8 mm exposed copper thermal pad with 0.36 °C/W junction-to-case resistance. When soldered to a 2 oz copper PCB with thermal vias, it achieves effective heat spreading-enabling 417 W total power dissipation at T_C = 25 °C without a heatsink, unlike TO-247 alternatives that require bulky mechanical cooling.

Can SCTL35N65G2V be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized R_DS(on) increases to 2.0× at 175 °C) ensures inherent current sharing. However, strict layout symmetry for gate and source loops is required; use individual 2.2 Ω gate resistors and Kelvin source connections to avoid imbalance above 3 devices.