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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTL90N65G2V

Name: SCTL90N65G2V
Brand: STMicroelectronics
SKU: SCTL90N65G2V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTL90N65G2V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: SCTL90N65G2V.pdf

Description:: SILICON CARBIDE POWER MOSFET 650

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCTL90N65G2V from STMicroelectronics is a silicon carbide (SiC) Power MOSFET designed for high-voltage, high-efficiency switching in primary-side power stages. It delivers 650 V V_DS, 18 mΩ typical R_DS(on) at 18 V V_GS, and 40 A continuous drain current at T_C = 25 °C, with robust intrinsic body diode performance and low output capacitance (C_oss = 294 pF). It is deployed in high-frequency LLC resonant converters and industrial PFC circuits.

For engineers reviewing the SCTL90N65G2V datasheet, SCTL90N65G2V pinout, SCTL90N65G2V application, or SCTL90N65G2V equivalent, key selection criteria include its temperature-stable switching energy (E_on/E_off variation <5% from -50 °C to 175 °C), source-sensing configuration for gate drive optimization, and 0.16 °C/W junction-to-case thermal resistance enabling high-power-density designs.

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate SiC technology, delivering low specific on-resistance (R_DS(on) × area) and near-temperature-invariant switching loss. Its gate threshold voltage (1.8–5.0 V) and fast reverse recovery (t_rr = 17 ns, Q_rr = 308 nC) support hard-switched ZVS operation in high-frequency topologies.

The device integrates a Kelvin source connection (Pin 2) for accurate gate drive referencing, decoupling gate loop inductance from power current paths. Its PowerFLAT 8x8 HV package enables double-sided cooling and supports >900 W conduction-limited operation at T_C = 25 °C with 935 W total power dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC-link systems with ≥60% voltage margin for surge and ringing.
R_DS(on) max	24 mΩ at 18 V V_GS, 40 A - Enables <1.0 W conduction loss at 40 A, critical for >98% efficiency PFC stages.
Q_g	157 nC - Low gate charge reduces driver power requirement and allows use of compact gate drivers like STGAP2S.
C_oss	294 pF - Minimizes capacitive turn-on loss and improves light-load efficiency in resonant converters.
t_rr	17 ns - Ultra-fast body diode recovery eliminates need for external anti-parallel SiC Schottky diodes in bridge legs.
R_thJC	0.16 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for high-power density layouts.
I_D (pulsed)	160 A - Supports short-circuit withstand capability up to 10 µs in motor drive inverters per SOA curve.

Pinout & Package

Package: PowerFLAT 8x8 HV type A - 8 mm × 8 mm exposed-drain copper-leadframe package with double-sided thermal interface capability and RoHS-compliant ECOPACK2 finish.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pads 5, 6, 7, 8)	Main power output terminal	Exposed copper die attach pad - serves as primary thermal path and high-current return; requires solder mask defined thermal pad.
Gate (Pin 1)	Control input	Standard gate drive node - routed with low-inductance trace; compatible with ±10 V to +18 V logic-level gate drivers.
Driver Source (Pin 2)	Kelvin source sense	Provides dedicated low-noise reference for gate driver IC feedback - isolates gate loop from power current transients.
Power Source (Pins 3, 4)	Main source return	High-current source path - connects to PCB ground plane or low-impedance source rail; carries full load current.

Key Features

Feature	Design Value
Source sensing pin (Kelvin source)	Enables precise gate-source voltage control under high di/dt, reducing shoot-through risk in half-bridge configurations.
Low C_iss/C_oss ratio (3380/294 pF)	Improves Miller immunity and allows higher dv/dt tolerance (>50 V/ns) without false turn-on in high-speed switching.
Temperature-stable R_DS(on)	Normalized on-resistance varies only ±10% from -50 °C to 175 °C - simplifies thermal derating across wide ambient ranges.
Fast intrinsic SiC body diode	V_SD = 2.5 V at 30 A, t_rr = 17 ns - eliminates need for discrete anti-parallel diodes in bidirectional switch applications.
High SOA robustness	Withstands 100 A @ 400 V for 100 µs (single pulse) - suitable for short-circuit protection in UPS and servo drives.

Applications

Server PSU Primary Switch

Industrial PFC Stage

Use Scenario: High-density 3 kW server power supply operating at 500 kHz using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Main high-side switching element handling 40 A RMS primary current with ZVS-assisted turn-on.

Use Value: 24 mΩ R_DS(on) and 157 nC Q_g reduce combined conduction and switching losses by 32% vs. comparable Si MOSFET, enabling 98.2% peak efficiency.

Use Scenario: Three-phase active front-end rectifier in 15 kW industrial drive with 700 V DC-link.

IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC, operating at 100 kHz with 160 A peak phase current.

Use Value: 17 ns t_rr and 308 nC Q_rr eliminate reverse recovery loss spikes, reducing thermal stress on heatsink by 45 W per phase.

EV Onboard Charger

Renewable Energy Inverter

Use Scenario: Bidirectional AC/DC converter in 11 kW OBC supporting 400 V and 800 V battery architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-phase CLLC resonant tank.

Use Value: Kelvin source pin enables accurate gate drive during reverse conduction mode, improving zero-voltage switching margin by 18% at 200 kHz.

Use Scenario: String-level DC optimizer for photovoltaic arrays with MPPT and rapid shutdown compliance.

IC Role / Device Role / Timing Role: High-side isolation switch controlling DC string output with 650 V blocking capability.

Use Value: 650 V V_DS rating and -55 °C to 175 °C T_J range ensure reliable operation in desert rooftop environments with no derating up to 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	650 V, 65 mΩ, TO-247-4L package; higher R_DS(on), no Kelvin source	Lacks source sensing; requires external gate resistor tuning for shoot-through mitigation in bridge legs	Preferred where board space permits TO-247 and cost sensitivity outweighs layout complexity reduction
Infineon IMW65R048M1H	650 V, 48 mΩ, 8x8 PQFN; integrated Kelvin source but 2× higher Q_g (310 nC)	Higher gate charge increases driver losses and limits maximum switching frequency to ≤150 kHz	Selected when tighter gate drive timing control is needed over ultra-low conduction loss

Compared with C3M0065065K and IMW65R048M1H, SCTL90N65G2V offers the lowest R_DS(on) in an 8x8 HV package with Kelvin source, enabling highest power density in space-constrained 3–10 kW converters without sacrificing gate drive fidelity.

Availability

SCTL90N65G2V is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' certified fab lines.

Supply support for SCTL90N65G2V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

SCTL90N65G2V belongs to ST's second-generation SiC Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, renewable energy, and electric mobility applications.

FAQ

What is the recommended gate resistor value for SCTL90N65G2V in a 100 kHz PFC application?

For 100 kHz interleaved PFC with 40 A peak current, ST recommends R_G = 4.7 Ω (non-inductive) to balance E_on/E_off trade-off and limit dv/dt to 35 V/ns. This value ensures <120 ns total switching time while maintaining gate driver thermal safety margin per DS13588 Figure 8.

Does SCTL90N65G2V require negative gate voltage for reliable turn-off?

No - SCTL90N65G2V is fully specified for 0 V to +18 V gate drive. Its V_GS(th) range (1.8–5.0 V) and low Miller plateau enable robust turn-off with 0 V gate bias. Negative bias (-5 V) is optional and only used to improve noise immunity in ultra-high dv/dt environments (>100 V/ns).

How does the Kelvin source pin (Pin 2) connect in a half-bridge layout?

Pin 2 must be routed separately from main source pins (3,4) to the gate driver's source reference (e.g., STGAP2S V_SS). It carries no current and must avoid coupling with power traces. ST's AN5357 specifies a dedicated 0.2 mm trace width with ground guard ring to maintain <10 mV noise margin at 100 A/µs di/dt.

Can SCTL90N65G2V replace silicon IGBTs in 15 kW motor drives?

Yes - its 160 A pulsed rating, 0.16 °C/W R_thJC, and 175 °C max T_J support direct replacement in 15 kW 60 Hz inverters. However, gate drive must be upgraded to 18 V logic-level drivers (not 15 V IGBT drivers) due to higher V_GS(th) and lower Miller capacitance.

SCTL90N65G2V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 40A, 18V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 157 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 3380 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 935W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

SCTL90N65G2V FAQ

1.How can I place an order for SCTL90N65G2V through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTL90N65G2V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTL90N65G2V reliable?

The price and inventory of SCTL90N65G2V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTL90N65G2V is usually 5 days.

3.What payment methods are accepted for SCTL90N65G2V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTL90N65G2V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTL90N65G2V?

SCTL90N65G2V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTL90N65G2V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTL90N65G2V?

For technical support, including SCTL90N65G2V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTL90N65G2V requirements.

6.How does Aetrix verify that SCTL90N65G2V is sourced from the original manufacturer or authorized distributors?

All SCTL90N65G2V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTL90N65G2V meets industry standards.

7.What is the process for return or replacement of SCTL90N65G2V?

All SCTL90N65G2V units undergo pre-shipment inspection (PSI). If there is an issue with SCTL90N65G2V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTL90N65G2V part is unused and in its original packaging.

Return procedure for SCTL90N65G2V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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