STMicroelectronics SCTW35N65G2V

Overview

SCTW35N65G2V from STMicroelectronics is a silicon carbide (SiC) Power MOSFET designed for high-efficiency, high-voltage switching in power conversion stages. It delivers 650 V drain-source voltage rating, 67 mΩ maximum R_DS(on) at 20 V_GS, 45 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling compact, high-power-density designs in industrial SMPS and motor drives.

For engineers reviewing the SCTW35N65G2V datasheet, SCTW35N65G2V pinout, SCTW35N65G2V application, or SCTW35N65G2V equivalent, key selection criteria include its ultra-low gate charge (73 nC), robust intrinsic body diode (t_rr = 18 ns), temperature-stable switching energy, and HiP247 package thermal performance (R_thJC = 0.72 °C/W).

Technical Context

This SiC MOSFET uses ST's second-generation trench-gate technology to achieve low specific on-resistance and minimal variation of switching loss across junction temperature (–55 °C to 200 °C). Its gate threshold voltage (1.8–5.0 V) and wide V_GS operating range (–5 V to +20 V) support robust gate drive design with negative turn-off bias.

The device integrates a fast, low-loss intrinsic body diode with 3.3 V forward voltage at 20 A and 85 nC reverse recovery charge - eliminating need for external anti-parallel Si diodes in hard-switched topologies. Dynamic parameters (C_iss = 1370 pF, C_rss = 30 pF, Q_gd/Q_gs ratio ≈ 1.9) enable high dV/dt immunity and efficient zero-voltage switching (ZVS) implementation.

Key Specifications

Pinout & Package

Supplied in the HiP247 package - a high-power, thermally enhanced variant of TO-247 with isolated tab, optimized for low-inductance PCB layout and direct heatsink mounting. The package features a 20.0 mm × 15.6 mm footprint, 4.7 mm height, and 5.45 mm lead pitch (e).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065065K and IXFH40N65X2, SCTW35N65G2V uniquely combines verified fast body diode performance, 200 °C operation, and lowest R_thJC - making it optimal for thermally constrained, high-reliability industrial inverters where diode conduction is unavoidable.

Availability

SCTW35N65G2V is available at Aetrix Electronics and suitable for industrial motor control, server power supplies, and renewable energy converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' qualified production line.

Supply support for SCTW35N65G2V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's STPOWER SiC MOSFET product line - engineered specifically for high-efficiency, high-reliability power conversion above 600 V, targeting applications where silicon alternatives fail to meet efficiency, thermal, or frequency targets.

FAQ

What gate drive voltage is recommended for reliable operation?

ST specifies –5 V to +20 V as the recommended operating range for V_GS. A –5 V turn-off bias is strongly advised to prevent spurious turn-on during high dV/dt events. Gate drive must deliver ≥2 A peak current to charge 73 nC within <50 ns while limiting overshoot to <22 V per absolute maximum ratings.

Is the HiP247 package electrically isolated?

No - the HiP247 package has an electrically connected metal tab tied directly to the drain (D) terminal. Thermal interface material must be electrically insulating if mounted to a grounded heatsink. Isolation voltage depends on the insulator used, not the package itself.

How does R_DS(on) change with temperature?

R_DS(on) increases predictably with junction temperature: 45 mΩ typ. at 25 °C, 67 mΩ max. at 25 °C, and 68 mΩ at 200 °C (V_GS = 20 V, I_D = 20 A). The normalized curve (Fig. 13) shows ~1.9× increase from 25 °C to 200 °C - significantly flatter than silicon MOSFETs.

Can this MOSFET replace silicon devices in existing designs?

Yes, but with gate drive and layout adaptations: lower gate resistance (≤5 Ω), tighter source loop routing, and verification of body diode reverse recovery behavior in hard-commutated topologies. Its 650 V rating and 45 A current support direct drop-in in many 600 V Si designs, provided thermal and EMI margins are re-evaluated.