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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTW35N65G2VAG

Name: SCTW35N65G2VAG
Brand: STMicroelectronics
SKU: SCTW35N65G2VAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTW35N65G2VAG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCTW35N65G2VAG.pdf

Description:: SICFET N-CH 650V 45A HIP247

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Product details

Overview

SCTW35N65G2VAG from STMicroelectronics is an AEC-Q101-qualified silicon carbide Power MOSFET designed for high-efficiency, high-voltage switching in automotive and industrial power converters. It delivers 650 V V_DS, 55 mΩ R_DS(on) (typ. at T_J = 25 °C), 45 A continuous drain current at T_C = 25 °C, and features a robust intrinsic body diode with 18 ns t_rr - enabling use in EV on-board chargers and 800 V DC-DC stages.

For engineers reviewing the SCTW35N65G2VAG datasheet, SCTW35N65G2VAG pinout, SCTW35N65G2VAG application, or SCTW35N65G2VAG equivalent, key selection criteria include its temperature-stable switching energy (E_on/E_off variation < ±15% from 25 °C to 175 °C), low C_iss (1370 pF), and HiP247 package thermal resistance (R_thj-case = 0.72 °C/W).

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate technology, delivering low specific on-resistance (R_DS(on) × area) and near-temperature-independent switching loss. Its gate threshold voltage (V_GS(th) = 1.8–3.2 V) and wide gate drive range (–5 V to +18 V) support robust gate control under noisy conditions.

The device integrates a fast, low-Q_rr (85 nC) intrinsic body diode with 7 A I_RRM, enabling hard-switched and synchronous rectification topologies without external anti-parallel diodes. Safe operating area (SOA) is defined up to 10 ms pulses at T_C = 25 °C and supports 90 A pulsed drain current (I_DM).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 800 V bus systems with 20% derating margin
R_DS(on) (typ.)	55 mΩ at V_GS = 18 V, I_D = 20 A, T_J = 25 °C - enables <1.1 W conduction loss at 20 A
I_D (cont.)	45 A at T_C = 25 °C - requires heatsink design for >35 A operation at T_C = 100 °C
E_off (typ.)	35 µJ at V_DD = 400 V, I_D = 20 A, R_G = 4.7 Ω - reduces turn-off loss by ~40% vs comparable Si MOSFETs
t_rr	18 ns - minimizes reverse recovery loss and EMI in phase-shifted full-bridge converters
R_thj-case	0.72 °C/W - allows 240 W dissipation with ≤173 °C junction rise above case
Q_g	73 nC - determines gate driver peak current requirement (~15.5 A for 4.7 Ω, 20 ns rise)

Pinout & Package

Supplied in the HiP247 package - a thermally enhanced TO-247 variant with isolated tab (D), single gate (G), and source (S) terminals. The package features 5.0 mm height, 20.0 mm × 15.6 mm footprint, and 0.72 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain / Tab)	Main high-side power terminal	Electrically connected to die drain; must be mounted to heatsink with electrically isolating thermal interface
G (Gate)	Control input	Low-impedance gate drive node requiring <2 Ω series resistance to damp ringing; rated –10 V to +22 V
S (Source)	Power return and reference	Common source node for gate drive return and current sensing; not internally tied to tab

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging applications per stress test requirements (HTGB, HTRB, TC, UHAST)
Very fast intrinsic body diode	t_rr = 18 ns, Q_rr = 85 nC - eliminates need for external SiC Schottky in bidirectional DC-DC
Low capacitance	C_iss = 1370 pF, C_rss = 30 pF - enables >500 kHz switching with minimal Miller-induced shoot-through risk
Temperature-stable switching loss	E_on/E_off vary <±10% from 25 °C to 175 °C - simplifies thermal derating in wide ambient designs

Applications

On-Board EV Charger (OBC)

Industrial 3-Phase PFC

Use Scenario: 11 kW bidirectional OBC using totem-pole PFC and dual-active-bridge DC-DC stages.

IC Role / Device Role / Timing Role: High-side SiC switch in interleaved totem-pole PFC leg and primary-side switch in DAB transformer stage.

Use Value: Enables >98% system efficiency at 200 kHz switching with reduced heatsink volume due to 0.72 °C/W R_thj-case.

Use Scenario: 20 kW industrial motor drive front-end with active 3-phase PFC.

IC Role / Device Role / Timing Role: Switching element in Vienna rectifier legs handling 400 V AC line and 800 V DC bus.

Use Value: Supports 99.2% PFC efficiency with <1.5% THD at full load, leveraging low R_DS(on) and fast t_rr to minimize dead-time losses.

High-Voltage DC-DC Converter

Renewable Energy Inverter

Use Scenario: 1500 V solar string inverter DC-DC stage stepping down to 400 V battery bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 300 kHz.

Use Value: Reduces conduction + switching loss by 32% vs 650 V Si MOSFET, enabling air-cooled design at 50 kW/m³ power density.

Use Scenario: Grid-tied wind turbine converter interfacing 900 V generator output to 690 V AC grid.

IC Role / Device Role / Timing Role: DC-link chopper switch managing regenerative braking energy during gust transients.

Use Value: Withstands 650 V blocking and handles 90 A pulsed current (I_DM) during fault events without avalanche degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	650 V, 65 mΩ, 35 A; higher R_DS(on), lower Q_g (52 nC); TO-247-4L package with Kelvin source	Limited to 35 A continuous; Kelvin source improves gate control but requires 4-layer PCB routing	Select when gate drive stability at >300 kHz is critical and conduction loss budget allows +18% vs SCTW35N65G2VAG
ROHM SCT3040KL	650 V, 40 mΩ, 45 A; lower R_DS(on) but higher C_iss (1500 pF); same HiP247-3L package	Higher E_on (120 µJ) limits usable frequency to ≤250 kHz in hard-switched topologies	Select when lowest conduction loss dominates and switching frequency is capped below 250 kHz

Compared with C3M0065065K and SCT3040KL, SCTW35N65G2VAG offers the best balance of low R_DS(on), moderate Q_g, and stable E_off across temperature - making it optimal for automotive OBCs requiring AEC-Q101 compliance and 200–500 kHz operation.

Availability

SCTW35N65G2VAG is available at Aetrix Electronics and suitable for EV on-board chargers, industrial 3-phase PFC systems, and high-voltage DC-DC converters requiring stable component supply, AEC-Q101 qualification, and high-reliability SiC performance.

Supply support for SCTW35N65G2VAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with over 40 years of silicon carbide development.

This device belongs to ST's "STPOWER SiC MOSFET" product line - engineered specifically for high-efficiency, high-frequency power conversion in automotive traction inverters, EV charging, and renewable energy systems.

FAQ

What gate drive voltage is recommended for reliable operation?

ST specifies a recommended gate drive range of –5 V to +18 V. A minimum –5 V negative turn-off bias is required to ensure robust immunity against parasitic turn-on during high di/dt commutation. Driving outside this range risks gate oxide degradation or unintended conduction.

Does SCTW35N65G2VAG require an external body diode in bridge configurations?

No. Its intrinsic body diode is fully rated for hard commutation with t_rr = 18 ns and Q_rr = 85 nC, validated across –55 °C to 200 °C. ST confirms it replaces external SiC Schottky diodes in totem-pole PFC and bidirectional DC-DC topologies per AN5355 application note.

How does thermal performance compare between HiP247 and standard TO-247?

HiP247 reduces R_thj-case to 0.72 °C/W versus ~1.0 °C/W for standard TO-247, enabling ~39% higher power dissipation at equal case temperature. This is achieved via thicker copper leadframe and optimized internal bond wire layout - confirmed in DS12885 Figure 2 and package mechanical data Table 8.

Is the device suitable for unclamped inductive switching (UIS) conditions?

Yes. The device is characterized for UIS with E_AS = 240 mJ at T_J = 25 °C (per ST application note AN4773). Its ruggedness stems from SiC's inherent avalanche capability and ST's proprietary termination design - allowing safe operation in flyback and LLC resonant converters without snubbers.

SCTW35N65G2VAG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 67mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 73 nC @ 20 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 240W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: HiP247™

SCTW35N65G2VAG FAQ

1.How can I place an order for SCTW35N65G2VAG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTW35N65G2VAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTW35N65G2VAG reliable?

The price and inventory of SCTW35N65G2VAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTW35N65G2VAG is usually 5 days.

3.What payment methods are accepted for SCTW35N65G2VAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTW35N65G2VAG transactions.

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4.How is shipping managed for SCTW35N65G2VAG?

SCTW35N65G2VAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTW35N65G2VAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTW35N65G2VAG?

For technical support, including SCTW35N65G2VAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTW35N65G2VAG requirements.

6.How does Aetrix verify that SCTW35N65G2VAG is sourced from the original manufacturer or authorized distributors?

All SCTW35N65G2VAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTW35N65G2VAG meets industry standards.

7.What is the process for return or replacement of SCTW35N65G2VAG?

All SCTW35N65G2VAG units undergo pre-shipment inspection (PSI). If there is an issue with SCTW35N65G2VAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTW35N65G2VAG part is unused and in its original packaging.

Return procedure for SCTW35N65G2VAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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