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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTW60N120G2

Name: SCTW60N120G2
Brand: STMicroelectronics
SKU: SCTW60N120G2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTW60N120G2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCTW60N120G2.pdf

Description:: DISCRETE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCTW60N120G2 from STMicroelectronics is a silicon carbide (SiC) Power MOSFET rated for 1200 V drain-source voltage, 52 mΩ maximum R_DS(on) at 18 V gate drive and 30 A, and 60 A continuous drain current at T_C = 25 °C. It features an ultra-fast intrinsic body diode, 94 nC total gate charge, and operates up to 200 °C junction temperature. It is used in high-efficiency, high-voltage switching applications such as industrial DC-DC converters.

For engineers reviewing the SCTW60N120G2 datasheet, SCTW60N120G2 pinout, SCTW60N120G2 application, or SCTW60N120G2 equivalent, key selection criteria include its 1200 V blocking capability, low 35 mΩ typical R_DS(on), robust 177 A pulsed drain current, fast 16 ns turn-on delay, and SiC-specific thermal stability across -55 °C to 200 °C operation.

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate SiC technology, delivering stable switching energy independent of junction temperature. Its gate threshold voltage (1.9–5.0 V) and low Crss (20 pF) enable precise control and reduced Miller-induced shoot-through risk in hard-switched topologies.

The device integrates a monolithic SiC Schottky body diode with 17 ns reverse recovery time and 102 nC Q_rr, eliminating external anti-parallel diodes in bridge configurations. Thermal resistance R_thJC is 0.45 °C/W, enabling high-power density designs when mounted on optimized heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Supports 1000 V DC bus systems with 20% safety margin for overvoltage transients.
R_DS(on) max	52 mΩ at V_GS = 18 V, I_D = 30 A - Enables <1.9 W conduction loss at 60 A (derated), critical for >98% efficiency in HV DC-DC stages.
I_D cont.	60 A at T_C = 25 °C - Sustains full-rated output in forced-air-cooled industrial SMPS without derating at ambient.
Q_g	94 nC - Reduces gate driver power demand and enables use of compact, cost-effective 1-A peak drivers.
t_d(off)	32 ns - Allows >1 MHz switching in resonant LLC or phase-shifted full-bridge topologies with tight dead-time control.
T_J max	200 °C - Permits operation in sealed enclosures or high-ambient environments without active cooling.
V_SD	3 V at I_SD = 30 A - Low forward drop minimizes body-diode conduction losses during ZVS transitions.

Pinout & Package

Supplied in HiP247 package - a high-power, isolated-tab TO-247 variant with enhanced thermal performance (R_thJC = 0.45 °C/W) and creepage/clearance compliant with IEC 60664-1 for 1200 V systems.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain / Tab)	Main high-side power terminal	Electrically connected to metal tab - must be mounted to heatsink with electrically isolating thermal interface; carries full load current and high dv/dt.
G (Gate)	Control input	Low-impedance gate requires careful layout to minimize ringing; accepts -5 V to +18 V drive; 1 Ω gate resistance specified at 1 MHz.
S (Source)	Power return reference	Common source node for gate drive return and current sensing; must be low-inductance path to avoid false turn-on during dI/dt events.

Key Features

Feature	Design Value
Ultra-low Q_g/C_iss	94 nC total gate charge and 1969 pF input capacitance enable fast, low-loss switching with minimal driver stress.
Robust intrinsic SiC body diode	17 ns t_rr, 102 nC Q_rr, and 10 A I_RRM support reliable synchronous rectification and ZVS operation without external diodes.
Temperature-stable R_DS(on)	R_DS(on) increases only ~1.8× from 25 °C to 200 °C - maintains predictable conduction loss across full operating range.
High-temperature junction rating	200 °C maximum T_J allows sustained operation in space-constrained, passively cooled industrial drives and solar inverters.

Applications

Industrial Motor Drives

Photovoltaic Inverters

Use Scenario: Three-phase inverter stage in 15–30 kW servo drives operating at 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switch in IGBT/SiC hybrid or all-SiC six-pack module configuration; handles 60 A RMS motor phase current.

Use Value: 200 °C T_J rating eliminates need for oversized heatsinks; low C_oss (113 pF) reduces turn-off loss during hard commutation.

Use Scenario: DC-link switching in string-level PV inverters with 1000–1500 V DC input.

IC Role / Device Role / Timing Role: Unidirectional switch in boost PFC stage and bidirectional switch in H-bridge inverter stage.

Use Value: 1200 V V_DS supports direct connection to 1500 V PV strings; 35 mΩ R_DS(on) typ. cuts conduction loss by 40% vs. comparable Si IGBTs.

Server & Telecom SMPS

EV Onboard Chargers

Use Scenario: Primary-side switch in 3–6 kW high-density LLC resonant converters for AI server power supplies.

IC Role / Device Role / Timing Role: Zero-voltage switched (ZVS) main FET with 1 MHz+ operation enabled by low Q_gd/Q_gs ratio.

Use Value: 36 nC Q_gd and 22 nC Q_gs ensure clean turn-off and reduce required dead time, improving light-load efficiency.

Use Scenario: Isolated DC-DC stage in 11–22 kW bidirectional OBCs converting 400/800 V battery to 400 V auxiliary supply.

IC Role / Device Role / Timing Role: High-frequency switching element in dual-active-bridge (DAB) topology operating at 200–500 kHz.

Use Value: Stable E_on/E_off vs. temperature (Fig. 10) ensures consistent timing margins across vehicle cabin thermal zones (-40 °C to +85 °C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	1200 V, 65 mΩ max R_DS(on), 42 A I_D cont., TO-247-4L package with Kelvin source	Lower current rating and higher R_DS(on); Kelvin source improves gate control but requires 4-pin PCB layout	Select when gate drive stability at >500 kHz is prioritized over current density; not drop-in due to pinout and thermal footprint differences.
IXFH60N120X2 (IXYS)	1200 V, 55 mΩ max R_DS(on), 60 A I_D cont., TO-247 package, no integrated body diode optimization	Higher Q_rr (160 nC) and slower t_rr (35 ns); less suitable for ZVS or high-frequency synchronous rectification	Prefer for cost-sensitive industrial UPS where body diode performance is secondary; requires external SiC diode for optimal efficiency.

Compared with C3M0065120K and IXFH60N120X2, SCTW60N120G2 delivers superior body diode quality (102 nC Q_rr, 17 ns t_rr) and lower R_DS(on) (52 mΩ vs. 65/55 mΩ), making it optimal for high-frequency, high-efficiency topologies where diode conduction and thermal headroom are critical.

Availability

SCTW60N120G2 is available at Aetrix Electronics and suitable for industrial motor control, photovoltaic inverters, and high-density server SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SCTW60N120G2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STPOWER SiC portfolio, engineered specifically for high-efficiency, high-reliability power conversion in 1000–1500 V systems where thermal resilience and switching speed are decisive.

FAQ

What gate drive voltage range is recommended for reliable operation?

The SCTW60N120G2 specifies a recommended operational gate-source voltage range of -5 V to +18 V. A minimum -5 V negative turn-off bias prevents spurious conduction during high dv/dt events, while +18 V ensures full enhancement and lowest R_DS(on). Gate drive circuits must limit peak current to avoid exceeding the 1 Ω gate input resistance rating at 1 MHz.

Does this MOSFET require an external body diode in half-bridge configurations?

No. The SCTW60N120G2 integrates a monolithic SiC Schottky body diode with 17 ns reverse recovery time and 102 nC Q_rr, enabling reliable freewheeling and ZVS operation without external diodes. Its low V_SD (3 V at 30 A) and temperature-stable recovery characteristics make it suitable for synchronous rectification in bridge legs.

How does R_DS(on) vary with temperature, and what is its impact on thermal design?

R_DS(on) increases approximately 1.8× from 25 °C to 200 °C (typical curve Fig. 13), reaching 73 mΩ at 200 °C. This predictable positive TC simplifies thermal modeling and avoids thermal runaway. Designers can size heatsinks using R_thJC = 0.45 °C/W and the 73 mΩ value for worst-case conduction loss at maximum T_J.

Is the HiP247 package compatible with standard TO-247 heatsinks and mounting hardware?

Yes - the HiP247 package shares identical mechanical outline dimensions (20.0 mm × 15.6 mm × 21.0 mm) and screw-hole placement with industry-standard TO-247, enabling drop-in replacement. However, its isolated metal tab requires electrically insulating thermal pads or mica washers when mounted to grounded heatsinks to maintain system isolation integrity.

SCTW60N120G2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 30A, 18V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 94 nC @ 8 V

Vgs (Max):: +18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1969 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 389W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: HiP247™

SCTW60N120G2 FAQ

1.How can I place an order for SCTW60N120G2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTW60N120G2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTW60N120G2 reliable?

The price and inventory of SCTW60N120G2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTW60N120G2 is usually 5 days.

3.What payment methods are accepted for SCTW60N120G2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTW60N120G2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTW60N120G2?

SCTW60N120G2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTW60N120G2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTW60N120G2?

For technical support, including SCTW60N120G2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTW60N120G2 requirements.

6.How does Aetrix verify that SCTW60N120G2 is sourced from the original manufacturer or authorized distributors?

All SCTW60N120G2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTW60N120G2 meets industry standards.

7.What is the process for return or replacement of SCTW60N120G2?

All SCTW60N120G2 units undergo pre-shipment inspection (PSI). If there is an issue with SCTW60N120G2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTW60N120G2 part is unused and in its original packaging.

Return procedure for SCTW60N120G2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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