Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTW90N65G2V

Name: SCTW90N65G2V
Brand: STMicroelectronics
SKU: SCTW90N65G2V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SCTW90N65G2V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCTW90N65G2V.pdf

Description:: SICFET N-CH 650V 90A HIP247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,679

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SCTW90N65G2V from STMicroelectronics is a silicon carbide (SiC) Power MOSFET designed for high-efficiency, high-frequency switching in demanding power conversion systems. It delivers 650 V V_DS, 24 mΩ R_DS(on) max at 18 V V_GS, 119 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling compact, high-power-density designs in solar inverters and industrial DC-DC converters.

For engineers reviewing the SCTW90N65G2V datasheet, SCTW90N65G2V pinout, SCTW90N65G2V application, or SCTW90N65G2V equivalent, key selection criteria include its ultra-low Q_g (157 nC), robust body diode with 17 ns t_rr, stable R_DS(on) over temperature, and HiP247 package thermal performance (R_thj-case = 0.31 °C/W).

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate SiC technology, delivering low conduction loss (18 mΩ typ. at 25 °C) and near-temperature-invariant switching energy. Its gate threshold voltage (1.9–5.0 V) and ±100 nA I_GSS support reliable drive under wide thermal and voltage margins.

The device integrates a fast, low-loss intrinsic body diode (V_SD = 2.5 V at 30 A, Q_rr = 308 nC), eliminating need for external anti-parallel Si diodes in bridge topologies. Switching behavior is characterized by low C_iss (3380 pF), C_oss (294 pF), and Crss (49 pF) at 400 V, enabling operation above 100 kHz with minimal EMI impact.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus systems with >50% safety margin for transient overvoltage in PV and EV charging applications
R_DS(on) max	24 mΩ at V_GS = 18 V, I_D = 50 A - enables <1.2 W conduction loss at 50 A, reducing heatsink requirements
I_D (cont.)	119 A at T_C = 25 °C - sustains high output power in single-device configurations for 10–20 kW converters
T_J max	200 °C - allows operation in sealed enclosures or high-ambient environments without derating
Q_g	157 nC - reduces gate driver power demand and enables use of lower-cost, lower-current drivers
t_rr	17 ns - minimizes reverse recovery losses and shoot-through risk in hard-switched half/full bridges
R_thj-case	0.31 °C/W - supports >500 W dissipation with standard heatsink mounting, critical for high-power density designs

Pinout & Package

The SCTW90N65G2V is housed in the HiP247 package - a thermally enhanced variant of TO-247 with isolated tab, optimized for high-current, high-thermal-load applications. The package features a copper leadframe, low-inductance internal construction, and 20 mm × 15.6 mm footprint with 5.45 mm pitch (e).

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain (exposed metal tab)	Primary heat path to heatsink; electrically connected to drain - requires insulated mounting or direct thermal interface
G (Pin 1)	Gate	High-impedance control terminal; driven with -5 V to +18 V; sensitive to ESD and ringing due to low C_iss/C_rss ratio
S (Pin 3)	Source	Reference node for gate drive and current sensing; low-inductance Kelvin source pin not present - layout must minimize source loop inductance

Key Features

Feature	Design Value
200 °C max operating junction temperature	Enables full-rated power delivery in ambient temperatures up to 105 °C without derating, reducing system cooling complexity
Ultra-low gate charge (157 nC)	Reduces gate driver losses by >40% vs comparable 650 V Si MOSFETs, supporting higher switching frequencies with same driver IC
Robust intrinsic SiC body diode (t_rr = 17 ns)	Eliminates need for external anti-parallel diodes in LLC and phase-shifted full-bridge topologies, saving board space and BOM cost
Stable R_DS(on) vs temperature (1.6× increase from 25 °C to 200 °C)	Provides predictable conduction loss across full thermal range, simplifying thermal design and control loop stability analysis
HiP247 package with 0.31 °C/W R_thj-case	Delivers 2.3× better thermal resistance than standard TO-247, enabling 565 W total dissipation at T_C = 25 °C

Applications

Photovoltaic String Inverters

Industrial High-Frequency DC-DC Converters

Use Scenario: 10–25 kW string inverters converting DC from solar arrays to grid-synchronized AC using three-level NPC or T-type topologies.

IC Role / Device Role / Timing Role: High-side/low-side switching element in DC-link chopper and inverter legs; operated at 16–40 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and stable E_off (200 µJ at 150 °C) enable >99% peak efficiency while maintaining thermal margin at 65 °C ambient.

Use Scenario: 12 V/48 V isolated DC-DC modules for factory automation PLCs and servo drives, requiring 1–3 kW output with <1% regulation error.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; synchronized with secondary-side synchronous rectifiers.

Use Value: Fast t_rr and low C_oss reduce dead-time losses and improve light-load efficiency; 200 °C rating supports convection-cooled chassis design.

EV On-Board Chargers (OBC)

UPS and Energy Storage Systems

Use Scenario: Bidirectional 6.6 kW OBCs integrating AC/DC PFC and isolated DC/DC stages for Level 2 charging.

IC Role / Device Role / Timing Role: Boost switch in totem-pole PFC stage and primary switch in dual-active-bridge (DAB) isolation stage.

Use Value: Low R_DS(on) and temperature-stable switching loss allow full power operation across -40 °C to +85 °C vehicle cabin environments.

Use Scenario: 50–200 kVA modular UPS systems with battery backup and grid-tie capability for data centers and telecom infrastructure.

IC Role / Device Role / Timing Role: Inverter leg switch in three-phase two-level or three-level converter feeding static transfer switches and battery interfaces.

Use Value: High V_DS rating and SOA robustness support 690 VAC grid compliance; 220 A pulsed current rating handles short-circuit fault currents without latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065090D (Wolfspeed)	Same 650 V/90 mΩ rating but 90 A I_D (TC=25°C); higher C_iss (4200 pF) and Q_g (192 nC)	Limited to lower-current designs; less suitable for >15 kW where thermal headroom is critical	Select when gate drive strength exceeds 2 A peak and layout prioritizes cost over thermal margin
IXYS120N65X2 (Littelfuse)	650 V/120 A rating but 27 mΩ R_DS(on); higher E_on/E_off (165/245 µJ) and 200 °C T_J limit	Requires larger heatsink for same power; slower switching increases filter size in high-frequency designs	Select when legacy PCB layout uses TO-247-3L and gate driver is already optimized for higher Q_g

Compared with C3M0065090D and IXYS120N65X2, SCTW90N65G2V offers superior thermal performance (0.31 °C/W vs ≥0.45 °C/W), lowest Q_g among 650 V/100+ A SiC MOSFETs, and best-in-class body diode softness - making it optimal for space-constrained, high-reliability renewable energy and industrial power systems.

Availability

SCTW90N65G2V is available at Aetrix Electronics and suitable for photovoltaic inverters, EV on-board chargers, and industrial DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' qualified production lines.

Supply support for SCTW90N65G2V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing, R&D, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's STPOWER SiC portfolio, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, electric mobility, and industrial motor control applications.

FAQ

What is the recommended gate resistor value for SCTW90N65G2V in a 40 kHz phase-shifted full-bridge?

A 2.2 Ω gate resistor is validated in the datasheet for 400 V V_DD, 50 A I_D, and -5 V to +18 V gate swing - achieving 26 ns t_d(on), 38 ns t_r, 58 ns t_d(off), and 16 ns t_f. For 40 kHz operation with ZVS, this value balances switching speed, gate oscillation damping, and driver stress. Lower values (<1.5 Ω) increase dV/dt-induced noise; higher values (>3.3 Ω) raise E_on/E_off by >15%.

Can SCTW90N65G2V replace a silicon IGBT in a 15 kW solar inverter without redesigning the gate driver?

No - the gate drive requirements differ significantly. This SiC MOSFET needs ±18 V gate voltage (vs ±15 V for most IGBTs), lower gate resistance (2.2 Ω typical vs 10–22 Ω), and faster transient response. Its 157 nC Q_g demands >1.5 A peak gate current, exceeding many IGBT drivers. A dedicated SiC-optimized gate driver (e.g., STGAP2S, UCC5870) with negative turn-off bias is required for reliable operation.

Is the HiP247 package RoHS-compliant and halogen-free?

Yes - the SCTW90N65G2V HiP247 package meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. ST's ECOPACK2 specification confirms compliance with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and lead-free reflow profile (peak 260 °C). Full material declarations are available via ST's product change notification (PCN) database.

Does the intrinsic body diode support bidirectional conduction in a dual-active-bridge (DAB) converter?

Yes - the SiC body diode conducts in reverse with V_SD = 2.5 V at 30 A and exhibits soft, low-noise reverse recovery (t_rr = 17 ns, Q_rr = 308 nC). In DAB operation, it enables zero-voltage switching during phase-shift transitions without external antiparallel diodes, verified in ST's AN5025 application note for 10 kW DAB designs.

SCTW90N65G2V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 157 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 390W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: HiP247™

SCTW90N65G2V FAQ

1.How can I place an order for SCTW90N65G2V through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTW90N65G2V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTW90N65G2V reliable?

The price and inventory of SCTW90N65G2V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTW90N65G2V is usually 5 days.

3.What payment methods are accepted for SCTW90N65G2V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTW90N65G2V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTW90N65G2V?

SCTW90N65G2V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTW90N65G2V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTW90N65G2V?

For technical support, including SCTW90N65G2V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTW90N65G2V requirements.

6.How does Aetrix verify that SCTW90N65G2V is sourced from the original manufacturer or authorized distributors?

All SCTW90N65G2V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTW90N65G2V meets industry standards.

7.What is the process for return or replacement of SCTW90N65G2V?

All SCTW90N65G2V units undergo pre-shipment inspection (PSI). If there is an issue with SCTW90N65G2V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTW90N65G2V part is unused and in its original packaging.

Return procedure for SCTW90N65G2V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…