Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTWA20N120

Name: SCTWA20N120
Brand: STMicroelectronics
SKU: SCTWA20N120
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SCTWA20N120

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCTWA20N120.pdf

Description:: IC POWER MOSFET 1200V HIP247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:526

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SCTWA20N120 from STMicroelectronics is a silicon carbide (SiC) N-channel power MOSFET rated for 1200 V drain-source voltage, 20 A continuous drain current at 25 °C, and 189 mΩ typical R_DS(on) at T_J = 150 °C, housed in a HiP247 long leads package. It serves as a high-voltage, high-temperature switching element in DC-DC converters, solar inverters, and motor drives where thermal stability and fast switching are critical.

For engineers reviewing the SCTWA20N120 datasheet, SCTWA20N120 pinout, SCTWA20N120 application, or SCTWA20N120 equivalent, key selection criteria include its 200 °C maximum junction temperature, low capacitance (C_iss = 650 pF), robust intrinsic body diode (t_rr = 15 ns), and tight R_DS(on) temperature coefficient - all essential for high-efficiency, high-power-density designs.

Technical Context

This SiC MOSFET leverages wide-bandgap material to deliver near-temperature-invariant switching losses and exceptionally stable on-resistance across -55 °C to 200 °C operation. Its gate threshold voltage (2–3.5 V) and low gate charge (Q_g = 45 nC) support fast, efficient hard-switching with minimal drive complexity.

The device integrates a fast, low-loss intrinsic body diode with reverse recovery charge (Q_rr = 75 nC) and peak reverse recovery current (I_RRM = 8 A), enabling reliable 3rd-quadrant conduction without external anti-parallel diodes in bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports primary-side switching in 1000 V-class DC bus systems (e.g., EV charging, industrial HV DC-DC)
R_DS(on) (T_J = 150 °C)	189 mΩ - enables low conduction loss at elevated temperatures without derating penalties
I_D (T_C = 25 °C)	20 A - delivers high current capability in compact heatsink-limited layouts
R_th(j-case)	1 °C/W - allows direct mounting to cold plates for high-power thermal management
t_rr	15 ns - minimizes commutation loss and EMI in synchronous rectification and ZVS circuits
Q_g	45 nC - reduces gate driver power demand and simplifies isolated gate drive design
T_J(max)	200 °C - permits operation in sealed enclosures or high-ambient environments without forced air

Pinout & Package

HiP247 long leads package: industry-standard outline with extended leads for high-voltage creepage, optimized for through-hole mounting and high-current PCB routing. Thermal pad on drain terminal enables low-impedance heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to thermal pad; carries full load current and dissipates heat directly to heatsink
Source (S)	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source sensing and gate return path
Gate (G)	Control terminal for channel modulation	High-impedance input requiring <25 V max rating; sensitive to dV/dt-induced turn-on

Key Features

Feature	Design Value
On-resistance temperature coefficient	±5% variation from -55 °C to 200 °C - eliminates need for dynamic R_DS(on) compensation in control loops
Intrinsic body diode t_rr	15 ns - enables zero-voltage switching in half-bridge configurations without external diode
Switching energy (E_off)	90 µJ at 800 V/10 A - reduces total switching loss by >40% vs. comparable Si MOSFETs
ECOPACK® compliance	Halogen-free, RoHS-compliant construction - meets IEC 61249-2-21 and JEDEC J-STD-020 standards
Safe operating area (SOA)	Unlimited forward-biased SOA up to 1200 V/20 A at T_C = 25 °C - supports single-pulse surge without derating

Applications

Solar Inverters

Industrial Motor Drives

Use Scenario: DC-to-AC conversion stage in string inverters with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC topology handling 1200 V blocking and 20 A RMS output current.

Use Value: 200 °C T_J rating allows passive cooling in rooftop enclosures; low C_oss enables >50 kHz switching with minimal loss.

Use Scenario: Inverter leg in servo drives for CNC machines and robotics.

IC Role / Device Role / Timing Role: Low-inductance switching element in 600–800 V DC bus systems with fast PWM (<20 kHz).

Use Value: Fast t_rr and soft 3rd-quadrant behavior reduce shoot-through risk and eliminate snubber requirements.

High-Voltage DC-DC Converters

UPS Systems

Use Scenario: Isolated bidirectional DC-DC stage in data center power distribution (e.g., 48 V ↔ 1200 V).

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Stable Q_g and R_DS(on) over temperature ensure consistent ZVS timing across ambient range.

Use Scenario: Online double-conversion UPS with battery backup and grid-tie capability.

IC Role / Device Role / Timing Role: Output inverter switch handling 1200 V DC link and 50/60 Hz sinusoidal output synthesis.

Use Value: Robust body diode withstands regenerative braking energy without avalanche stress or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	R_DS(on) = 65 mΩ @ 25 °C; higher current rating (32 A); TO-247-4L package with Kelvinsource	Better suited for paralleling and ultra-high-efficiency PFC stages due to lower R_DS(on) and enhanced gate control	Select when gate drive simplicity and Kelvin source layout are prioritized over cost and legacy footprint compatibility
IXFH40N120X (IXYS)	Si-based IGBT; 1200 V/40 A; slower switching (t_on/t_off > 100 ns); higher conduction loss above 10 kHz	Lower cost alternative for <20 kHz applications where switching loss is secondary to BOM cost	Select only for fixed-frequency, low-switching-frequency motor drives where thermal margin exists

Compared with C3M0065120K, SCTWA20N120 offers lower gate charge and simpler 3-pin layout but higher R_DS(on); versus IXFH40N120X, it delivers superior efficiency above 20 kHz and eliminates tail current, though at higher unit cost.

Availability

SCTWA20N120 is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable halogen-free sourcing.

Supply support for SCTWA20N120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

SCTWA20N120 belongs to ST's SiC Power MOSFET product line, engineered specifically for high-efficiency, high-power-density systems operating at >1000 V and >100 kHz, targeting renewable energy and industrial electrification.

FAQ

What is the maximum gate-source voltage rating for SCTWA20N120?

The absolute maximum V_GS is -10 V to +25 V per the preliminary datasheet. Exceeding +25 V risks permanent gate oxide damage, while negative gate bias below -10 V may cause unintended turn-off during fast transients. Recommended operating range is -5 V to +20 V for reliable hard-switching performance.

Does SCTWA20N120 require a negative gate drive voltage?

No, negative gate drive is not required but recommended for noise immunity in high-dV/dt environments. The device turns off fully at 0 V gate voltage; however, applying -5 V improves immunity to Miller-induced false turn-on during high-speed switching in bridge configurations.

Can SCTWA20N120 replace silicon MOSFETs in existing 1200 V designs?

Yes, with gate drive and layout adaptations: its lower Q_g and faster switching reduce driver power and EMI filter size, but its steeper dV/dt demands tighter gate loop inductance control and Kelvin source routing to avoid oscillation. Thermal interface must also accommodate higher power density.

Is the intrinsic body diode suitable for continuous freewheeling operation?

Yes - the SiC body diode exhibits low forward voltage (V_SD = 3.6 V at 5 A), fast recovery (t_rr = 15 ns), and no reverse recovery tail, making it suitable for continuous 3rd-quadrant conduction in synchronous rectifiers and half-bridge freewheeling without external diodes or snubbers.

SCTWA20N120 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 20V

Rds On (Max) @ Id, Vgs:: 239mOhm @ 10A, 20V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 20 V

Vgs (Max):: +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: HiP247™ Long Leads

SCTWA20N120 FAQ

1.How can I place an order for SCTWA20N120 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTWA20N120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTWA20N120 reliable?

The price and inventory of SCTWA20N120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTWA20N120 is usually 5 days.

3.What payment methods are accepted for SCTWA20N120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTWA20N120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTWA20N120?

SCTWA20N120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTWA20N120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTWA20N120?

For technical support, including SCTWA20N120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTWA20N120 requirements.

6.How does Aetrix verify that SCTWA20N120 is sourced from the original manufacturer or authorized distributors?

All SCTWA20N120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTWA20N120 meets industry standards.

7.What is the process for return or replacement of SCTWA20N120?

All SCTWA20N120 units undergo pre-shipment inspection (PSI). If there is an issue with SCTWA20N120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTWA20N120 part is unused and in its original packaging.

Return procedure for SCTWA20N120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…