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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTWA35N65G2V

Name: SCTWA35N65G2V
Brand: STMicroelectronics
SKU: SCTWA35N65G2V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTWA35N65G2V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCTWA35N65G2V.pdf

Description:: TRANS SJT N-CH 650V 45A TO247

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Product details

Overview

SCTWA35N65G2V from STMicroelectronics is a silicon carbide (SiC) Power MOSFET rated for 650 V drain-source voltage, 67 mΩ maximum R_DS(on) at 20 V_GS, and 45 A continuous drain current at T_C = 25 °C. It features an ultra-fast intrinsic body diode, low gate charge (73 nC), and operates up to 200 °C junction temperature-enabling high-efficiency switching in high-voltage power converters.

For engineers reviewing the SCTWA35N65G2V datasheet, SCTWA35N65G2V pinout, SCTWA35N65G2V application, or SCTWA35N65G2V equivalent, key selection criteria include its 650 V rating, 67 mΩ on-resistance, 73 nC total gate charge, 18 ns reverse recovery time, and HiP247 long leads package thermal performance (R_thJC = 0.72 °C/W).

Technical Context

This 2nd-generation SiC MOSFET delivers stable switching loss across temperature-E_on and E_off vary less than ±15% from 25 °C to 175 °C. Its gate threshold voltage (1.8–5.0 V) and low Crss (30 pF) support robust noise immunity and fast, controllable turn-on/turn-off transitions under hard-switching conditions.

The device integrates a monolithic SiC Schottky-like body diode with 3.3 V forward voltage at 20 A and only 85 nC Q_rr, enabling zero-voltage switching (ZVS) capability in resonant topologies without external diodes. Its safe operating area (SOA) supports single-pulse currents up to 90 A at V_DS ≤ 400 V and T_J ≤ 200 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports primary-side switching in 400 V AC-input PFC and 800 V DC-link systems without derating.
R_DS(on) max	67 mΩ @ 20 V_GS, 20 A - Enables <1.3 W conduction loss at 45 A in continuous operation with forced cooling.
Q_g	73 nC - Reduces gate drive power requirement and allows use of compact, low-current gate drivers (e.g., 1–2 A peak).
E_off	35 µJ @ 400 V, 20 A - Low turn-off energy enables >200 kHz operation in LLC and phase-shifted full-bridge converters.
T_J max	200 °C - Permits high-power density designs with reduced heatsink volume and eliminates need for thermal derating below 175 °C.
trr / Q_rr	18 ns / 85 nC - Minimizes commutation losses and EMI in bridge-leg configurations; eliminates need for anti-parallel Si diodes.
R_thJC	0.72 °C/W - Delivers 240 W power dissipation at T_C = 25 °C, supporting high-current industrial motor drives without baseplate water cooling.

Pinout & Package

Supplied in the HiP247 long leads package-a thermally enhanced variant of TO-247 with extended leads for improved creepage/clearance and direct PCB mounting. The package features isolated tab (drain-connected) and optimized copper slug for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain (high-side switch node)	Electrically connected to metal tab; requires insulated mounting or direct heatsink attachment with dielectric pad.
G (Pin 1)	Gate	Low-impedance control input; gate resistance (R_g = 2 Ω) enables precise switching speed tuning via external series resistor.
S (Pin 3)	Source	Power return path and gate reference; must be routed with low inductance to minimize ringing during dV/dt transients.

Key Features

Feature	Design Value
Ultra-low gate charge	73 nC total charge enables <100 ns switching transitions with standard 2 A gate drivers, reducing driver cost and board space.
High-temperature operation	Rated for continuous operation at T_J = 200 °C-supports compact, sealed enclosures in industrial motor drives without active airflow.
Robust intrinsic body diode	18 ns t_rr and 7 A I_RRM allow reliable freewheeling in half-bridge inverters without external diode paralleling or snubbing.
Temperature-stable R_DS(on)	R_DS(on) increases only ~1.5× from 25 °C to 175 °C-simplifies thermal design and improves current sharing in parallel configurations.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Three-phase inverter stage in 7.5 kW servo drives operating at 16 kHz PWM frequency with air-cooled heatsinks.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT-replacement topology, handling 45 A RMS phase current with <1.5% conduction loss.

Use Value: Eliminates external freewheeling diodes and reduces heatsink mass by 35% versus silicon IGBTs due to lower switching + conduction losses.

Use Scenario: Primary-side switch in 3.5 kW server front-end PFC stage with interleaved boost architecture and digital control.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch enabling >98.5% efficiency at 230 V AC input and full load.

Use Value: Enables 200 kHz operation with <0.5% efficiency penalty over temperature range, meeting 80 PLUS Titanium requirements.

Renewable Energy Inverters

EV Onboard Chargers

Use Scenario: DC-link switching in 15 kW string solar inverters with transformerless topology and ungrounded PV arrays.

IC Role / Device Role / Timing Role: Bidirectional switch in H-bridge configuration managing 1000 V DC bus and reactive power flow.

Use Value: Withstands 650 V blocking and delivers <0.8% THD at 50 Hz fundamental due to low Crss and stable SOA.

Use Scenario: Isolated DC-DC stage in 11 kW bidirectional OBC, operating in dual-phase ZVS mode at 300 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-frequency switch in active-clamp forward converter.

Use Value: Achieves 97.2% peak efficiency and <15 °C lower junction rise vs. Si MOSFETs under identical thermal interface conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	650 V, 65 mΩ typ., 44 A, TO-247-4L package with Kelvin source	Requires 4-pin layout and gate driver with separate Kelvin return; better high-frequency EMI control but higher PCB complexity	Select when optimizing for <100 kHz+ ZVS operation and lowest possible E_on; avoid if legacy 3-pin footprint compatibility is required.
ROHM SCT3040KL	650 V, 40 mΩ typ., 45 A, TO-247N package, higher Q_g (92 nC)	Higher gate charge increases driver stress and limits max switching frequency to ~150 kHz in same thermal envelope	Prefer for cost-sensitive industrial drives where conduction loss dominates and gate drive simplicity is prioritized over peak efficiency.

Compared with C3M0065065K and SCT3040KL, SCTWA35N65G2V offers optimal balance of 3-pin compatibility, 73 nC gate charge, and 0.72 °C/W R_thJC, making it ideal for retrofitting Si-based designs into higher-efficiency SiC while retaining existing gate driver and heatsink layouts.

Availability

SCTWA35N65G2V is available at Aetrix Electronics and suitable for industrial motor control, renewable energy inverters, and high-density telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' qualified production lines.

Supply support for SCTWA35N65G2V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with vertical manufacturing capabilities spanning silicon carbide epitaxy, wafer fabrication, and advanced packaging.

This device belongs to ST's second-generation SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, automotive, and renewable energy systems demanding >98% efficiency and >15-year field life.

FAQ

What is the recommended gate drive voltage range for reliable operation?

The absolute maximum gate-source voltage is -10 V to +22 V, but ST specifies -5 V to +20 V as the recommended operating range. A gate drive of +20 V ensures minimum R_DS(on) and robust noise immunity, while -5 V negative turn-off bias prevents spurious turn-on during high dV/dt events in bridge configurations.

Can SCTWA35N65G2V replace silicon IGBTs directly in existing designs?

Yes-its 3-pin HiP247 long leads footprint matches standard TO-247 layouts, and its 650 V rating and 45 A current capability align with common 600 V IGBTs. However, gate drive must be adjusted: lower gate resistance (≤10 Ω) and negative turn-off bias (-5 V) are required to manage faster switching and prevent oscillation.

How does the body diode performance compare to discrete SiC Schottky diodes?

The intrinsic body diode exhibits 3.3 V forward voltage at 20 A and 18 ns t_rr, matching performance of 650 V SiC Schottky diodes in the same current class. Unlike discrete diodes, it shares thermal and electrical paths with the MOSFET channel, eliminating bond wire inductance and enabling tighter layout control in half-bridge legs.

Is this device qualified for automotive applications per AEC-Q101?

No-SCTWA35N65G2V is not AEC-Q101 qualified. It is specified for industrial, computing, and renewable energy applications. For automotive-grade SiC MOSFETs, ST offers the AEC-Q101-qualified SCTW35N65G2AG in the same package with identical electrical specs and extended reliability testing.

SCTWA35N65G2V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 72mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:: 3.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 73 nC @ 20 V

Vgs (Max):: +20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 73000 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

SCTWA35N65G2V FAQ

1.How can I place an order for SCTWA35N65G2V through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTWA35N65G2V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTWA35N65G2V reliable?

The price and inventory of SCTWA35N65G2V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTWA35N65G2V is usually 5 days.

3.What payment methods are accepted for SCTWA35N65G2V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTWA35N65G2V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTWA35N65G2V?

SCTWA35N65G2V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTWA35N65G2V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTWA35N65G2V?

For technical support, including SCTWA35N65G2V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTWA35N65G2V requirements.

6.How does Aetrix verify that SCTWA35N65G2V is sourced from the original manufacturer or authorized distributors?

All SCTWA35N65G2V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTWA35N65G2V meets industry standards.

7.What is the process for return or replacement of SCTWA35N65G2V?

All SCTWA35N65G2V units undergo pre-shipment inspection (PSI). If there is an issue with SCTWA35N65G2V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTWA35N65G2V part is unused and in its original packaging.

Return procedure for SCTWA35N65G2V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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