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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTWA35N65G2V-4

Name: SCTWA35N65G2V-4
Brand: STMicroelectronics
SKU: SCTWA35N65G2V-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTWA35N65G2V-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: SCTWA35N65G2V-4.pdf

Description:: DISCRETE

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Product details

Overview

SCTWA35N65G2V-4 from STMicroelectronics is a silicon carbide (SiC) Power MOSFET rated for 650 V drain-source voltage, 67 mΩ maximum R_DS(on) at 20 V_GS, and 45 A continuous drain current at T_C = 25 °C. It features a source-sensing pin for enhanced efficiency in high-frequency switching topologies and operates up to 200 °C junction temperature. It is deployed in high-efficiency 650 V PFC stages and LLC resonant converters.

For engineers reviewing the SCTWA35N65G2V-4 datasheet, SCTWA35N65G2V-4 pinout, SCTWA35N65G2V-4 application, or SCTWA35N65G2V-4 equivalent, key selection criteria include its 73 nC total gate charge, 18 ns reverse recovery time, 1370 pF input capacitance, low thermal resistance (0.72 °C/W), and HiP247-4 package with dedicated driver source terminal.

Technical Context

This SiC MOSFET uses ST's second-generation trench-gate technology to deliver stable R_DS(on) across temperature - only 2× increase from 25 °C to 200 °C - and near-temperature-invariant switching loss. Its intrinsic body diode exhibits fast, soft reverse recovery (Q_rr = 85 nC, t_rr = 18 ns) without requiring external anti-parallel diodes in bridge configurations.

The HiP247-4 package integrates four terminals: Drain (Tab), Gate (Pin 4), Driver Source (Pin 3), and Power Source (Pin 2), enabling Kelvin-source sensing to eliminate source inductance impact on gate drive loop stability and switching waveform fidelity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V AC input PFC and 600 V DC bus systems with 20% margin.
R_DS(on) max	67 mΩ @ V_GS = 20 V, I_D = 20 A - Enables <1.3 W conduction loss at 45 A in hard-switched operation.
I_D cont.	45 A @ T_C = 25 °C - Sustains full load in compact heatsink designs when paired with low-R_thJC.
Q_g	73 nC - Requires ~1.5 W gate driver power at 100 kHz, compatible with standard SiC drivers (e.g., STGAP2S).
t_rr	18 ns - Eliminates voltage spikes and shoot-through risk in synchronous rectification and half-bridge ZVS circuits.
T_J max	200 °C - Allows derating-free operation in sealed industrial enclosures up to 90 °C ambient.
C_iss	1370 pF - Reduces Miller-induced turn-on risk compared to first-gen SiC MOSFETs with similar R_DS(on).

Pinout & Package

Supplied in the HiP247-4 surface-mount-compatible through-hole package with isolated tab (Drain), optimized for high-current, high-thermal-demand applications. The 4-pin configuration separates driver and power return paths to suppress common-source inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; must be mounted to heatsink with insulated thermal interface.
Gate (Pin 4)	Control electrode	Receives gate drive signal; requires low-inductance routing due to high dV/dt capability (>50 V/ns).
Driver Source (Pin 3)	Kelvin source for gate loop	Provides dedicated low-noise reference for gate driver IC feedback, decoupling gate loop from power loop.
Power Source (Pin 2)	Main source return path	Carries full load current; connects to PCB ground plane or busbar with minimal impedance.

Key Features

Feature	Design Value
Source sensing pin	Enables Kelvin-source gate drive to maintain clean switching waveforms under >100 A/µs di/dt conditions.
Robust intrinsic body diode	Soft reverse recovery (t_rr = 18 ns, Q_rr = 85 nC) allows reliable synchronous rectification without external diode.
Low capacitances	C_iss = 1370 pF, C_oss = 125 pF - reduces capacitive losses and improves EMI profile in >100 kHz designs.
High T_J capability	Rated for continuous operation up to 200 °C junction temperature - enables smaller heatsinks and higher power density.
Temperature-stable R_DS(on)	Only 1.3× increase from 25 °C to 175 °C - simplifies thermal design and improves system efficiency consistency.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: 15–30 kW three-phase inverter stage using six-pack topology with active gate driving.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/SiC hybrid or full-SiC inverter leg.

Use Value: 200 °C T_J rating permits operation in fanless enclosures; low Q_g enables 50–100 kHz PWM without excessive gate loss.

Use Scenario: Primary-side switch in 3.3 kW server CRPS (Common Redundant Power Supply) with Totem-Pole PFC + LLC.

IC Role / Device Role / Timing Role: Fast-switching PFC switch handling 12 A RMS input current at 65 kHz.

Use Value: 18 ns t_rr eliminates need for snubbers; 67 mΩ R_DS(on) achieves >98.5% PFC efficiency at full load.

Renewable Energy Inverters

EV Onboard Chargers

Use Scenario: DC-AC stage of 10 kW solar string inverter operating at 80 kHz with unipolar modulation.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch with integrated body diode conducting freewheeling current.

Use Value: Soft-recovery body diode prevents voltage overshoot during zero-crossing commutation; 0.72 °C/W R_thJC supports forced-air cooling only.

Use Scenario: Secondary-side synchronous rectifier in 11 kW OBC LLC transformer output stage.

IC Role / Device Role / Timing Role: Low-loss, high-speed rectifying switch replacing Schottky diodes in 400–800 V output rails.

Use Value: 3.3 V V_SD forward drop at 20 A yields lower conduction loss than 120 V Si Schottky at same current density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K (Wolfspeed)	650 V, 65 mΩ typ., 44 A, TO-247-4L package; slightly lower Q_g (62 nC) but higher C_oss (145 pF)	Limited to ≤175 °C T_J; no dedicated driver source pin - requires external Kelvin layout	Preferred where gate drive simplicity outweighs need for ultra-low EMI; verify layout for source inductance.
IXFH40N65X2 (IXYS)	650 V, 70 mΩ max., 40 A, TO-247-4L; higher R_DS(on), lower t_rr (12 ns), but only 150 °C T_J rating	Not suitable for 200 °C ambient environments; lower peak current capability limits overload robustness	Cost-sensitive designs with moderate thermal constraints; avoid in sealed or high-ambient deployments.

Compared with C3M0065065K and IXFH40N65X2, SCTWA35N65G2V-4 uniquely combines 200 °C operation, integrated Kelvin source, and balanced switching/conduction trade-offs - making it optimal for thermally constrained, high-reliability industrial and EV infrastructure applications.

Availability

SCTWA35N65G2V-4 is available at Aetrix Electronics and suitable for switching mode power supplies, DC-DC converters, and industrial motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from STMicroelectronics' qualified production line.

Supply support for SCTWA35N65G2V-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density power conversion systems operating above 100 kHz and demanding >99% efficiency at 650 V class.

FAQ

What is the purpose of the Driver Source (Pin 3) terminal?

The Driver Source (Pin 3) provides a dedicated Kelvin connection for the gate driver's source reference, isolating the high-current power source path (Pin 2) from the gate control loop. This eliminates voltage drop across source inductance during fast switching, preventing false turn-on and improving waveform fidelity - critical for stable operation above 50 kHz.

Can SCTWA35N65G2V-4 replace silicon IGBTs directly in existing designs?

No direct replacement is guaranteed. While it matches IGBT voltage/current ratings, its gate drive requirements differ: it needs −5 V to +20 V gate swing, lower gate charge (73 nC vs. typical IGBT >200 nC), and faster layout practices. Existing gate drivers must be validated for SiC compatibility, especially negative turn-off bias and dV/dt immunity.

What is the maximum recommended gate resistor value for hard-switched 65 kHz operation?

For hard-switched operation at 65 kHz with V_DD = 400 V and I_D = 20 A, ST recommends R_G = 4.7 Ω (as tested in datasheet). Increasing beyond 6.8 Ω raises E_on/E_off disproportionately; below 3.3 Ω risks gate oscillation due to layout parasitics - verified via double-pulse testing with 50 ns rise/fall times.

Does this device require a negative gate voltage for reliable turn-off?

Yes. The datasheet specifies V_GS = −5 V as the recommended turn-off bias to ensure robust immunity against Miller-induced false turn-on during high dV/dt transitions. Operating with 0 V turn-off increases risk of spurious conduction in bridge configurations, especially above 100 V/ns slew rates observed in LLC and Totem-Pole PFC topologies.

SCTWA35N65G2V-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 67mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 73 nC @ 20 V

Vgs (Max):: +18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 240W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

SCTWA35N65G2V-4 FAQ

1.How can I place an order for SCTWA35N65G2V-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTWA35N65G2V-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTWA35N65G2V-4 reliable?

The price and inventory of SCTWA35N65G2V-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTWA35N65G2V-4 is usually 5 days.

3.What payment methods are accepted for SCTWA35N65G2V-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTWA35N65G2V-4 transactions.

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4.How is shipping managed for SCTWA35N65G2V-4?

SCTWA35N65G2V-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTWA35N65G2V-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTWA35N65G2V-4?

For technical support, including SCTWA35N65G2V-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTWA35N65G2V-4 requirements.

6.How does Aetrix verify that SCTWA35N65G2V-4 is sourced from the original manufacturer or authorized distributors?

All SCTWA35N65G2V-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTWA35N65G2V-4 meets industry standards.

7.What is the process for return or replacement of SCTWA35N65G2V-4?

All SCTWA35N65G2V-4 units undergo pre-shipment inspection (PSI). If there is an issue with SCTWA35N65G2V-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTWA35N65G2V-4 part is unused and in its original packaging.

Return procedure for SCTWA35N65G2V-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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