STMicroelectronics SCTWA50N120

Overview

SCTWA50N120 from STMicroelectronics is a silicon carbide (SiC) Power MOSFET rated for 1200 V drain-source voltage, 52 mΩ typical R_DS(on) at 20 V_GS, and 65 A continuous drain current at T_C = 25 °C. It operates up to 200 °C junction temperature, features a fast intrinsic body diode, and is housed in an HiP247 long leads package - optimized for high-efficiency AC-DC converters and solar inverters.

For engineers reviewing the SCTWA50N120 datasheet, SCTWA50N120 pinout, SCTWA50N120 application, or SCTWA50N120 equivalent, key selection criteria include its low temperature-dependent R_DS(on) drift, 55 ns reverse recovery time, 122 nC total gate charge, and robust SOA up to 130 A pulsed current in high-power industrial switching designs.

Technical Context

This SiC MOSFET leverages wide-bandgap material properties to deliver near-temperature-invariant conduction and switching performance. Its gate threshold voltage remains stable across –75 °C to +175 °C (normalized V_GS(th) variation < ±20%), and R_DS(on) increases only ~35% from 25 °C to 200 °C - enabling simplified thermal derating in high-density power stages.

The device integrates a monolithic SiC Schottky-like body diode with 3.5 V forward voltage at 20 A and ultra-low Q_rr (230 nC), eliminating need for external anti-parallel diodes in hard-switched topologies. Its 0.55 °C/W junction-to-case thermal resistance supports high-power operation within standard heatsink constraints.

Key Specifications

Pinout & Package

Package: HiP247 long leads - industry-standard outline with enhanced thermal capability (R_thJC = 0.55 °C/W), compatible with existing TO-247-3 mounting hardware but optimized for SiC thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065120K and IXYS120N120A3, SCTWA50N120 delivers the lowest R_DS(on) in standard 3-pin HiP247, offering best conduction efficiency in space-constrained industrial inverters without requiring Kelvin-source layout changes.

Availability

SCTWA50N120 is available at Aetrix Electronics and suitable for AC-DC converters, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for SCTWA50N120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, EV infrastructure, and industrial motor control systems.

FAQ

What gate drive voltage is recommended for optimal R_DS(on) and reliability?

ST specifies V_GS = 20 V for minimum R_DS(on) (52 mΩ typ.), with absolute maximum V_GS = 25 V. A –5 V to +20 V gate drive is recommended to ensure robust turn-off under high dv/dt conditions and prevent spurious turn-on. Gate resistor selection must limit peak current to ≤4 A while maintaining < 100 ns rise/fall times.

Can SCTWA50N120 replace silicon IGBTs in existing 1200 V inverter designs?

Yes - with layout and gate drive modifications. Its lower R_DS(on), faster switching, and integrated body diode enable higher efficiency and reduced heatsink size. However, gate drive must supply higher peak current (≥3 A), and PCB traces must minimize inductance to avoid ringing. SOA curves confirm comparable short-circuit ruggedness at < 10 µs.

Is the HiP247 long leads package RoHS-compliant and halogen-free?

Yes - ST certifies the HiP247 long leads package for SCTWA50N120 as ECOPACK2 compliant: lead-free, RoHS-compliant, and halogen-free per IEC 61249-2-21. Full environmental compliance documentation is available via ST's quality portal using order code SCTWA50N120.

How does the intrinsic body diode perform at elevated temperature?

At T_J = 150 °C, V_SD increases to ~4.1 V at 20 A, and Q_rr rises to ~280 nC - still significantly lower than silicon diodes. The diode maintains soft recovery (I_RRM = 14 A) with no tail current, enabling zero-voltage switching in resonant topologies up to 175 °C junction temperature.