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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTWA70N120G2V-4

Name: SCTWA70N120G2V-4
Brand: STMicroelectronics
SKU: SCTWA70N120G2V-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTWA70N120G2V-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: SCTWA70N120G2V-4.pdf

Description:: DISCRETE

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Product details

Overview

SCTWA70N120G2V-4 from STMicroelectronics is a silicon carbide (SiC) Power MOSFET designed for high-voltage, high-efficiency switching in demanding power conversion stages. It delivers 1200 V drain-source voltage rating, 30 mΩ max R_DS(on) at 18 V gate drive and 50 A, 91 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling compact, high-power-density designs in industrial and renewable energy systems.

For engineers reviewing the SCTWA70N120G2V-4 datasheet, SCTWA70N120G2V-4 pinout, SCTWA70N120G2V-4 application, or SCTWA70N120G2V-4 equivalent, key selection considerations include its 150 nC total gate charge, 28 nC gate-source charge, 63 nC gate-drain charge, 11.16 ns reverse recovery time, and HiP247-4 4-pin source-sensing package for precision gate control and reduced conduction losses.

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate technology to achieve low specific on-resistance (21 mΩ typ.) and near-temperature-invariant switching loss - E_on and E_off vary by less than ±15% across -55 °C to 200 °C. Its intrinsic body diode supports hard commutation with 2.7 V forward voltage at 50 A and ultra-fast 11.16 ns t_rr.

The HiP247-4 package integrates separate driver source (pin 3) and power source (pin 2) terminals, enabling Kelvin-source sensing to eliminate source inductance effects during high-dI/dt switching. Gate threshold voltage is tightly distributed (1.9–4.9 V), and breakdown voltage remains stable (±2% variation) over full temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Supports 1000 V DC bus systems with 20% safety margin for surge and ringing.
R_DS(on) max	30 mΩ at V_GS = 18 V, I_D = 50 A - Enables <1.5 W conduction loss at 50 A, critical for >10 kW converters.
I_D cont.	91 A at T_C = 25 °C - Sustains high output power in forced-air-cooled industrial SMPS and motor drives.
Q_g	150 nC - Low gate charge reduces driver power requirement and enables >100 kHz operation with standard gate drivers.
t_rr	11.16 ns - Minimizes reverse recovery loss and EMI in totem-pole PFC and bidirectional DC-DC topologies.
T_J max	200 °C - Allows derating-free operation in high-ambient environments (e.g., enclosed solar inverters).
R_thJC	0.32 °C/W - Enables efficient heat transfer to heatsink; supports >500 W dissipation with modest thermal interface.

Pinout & Package

Delivered in the HiP247-4 surface-mount-compatible through-hole package with isolated tab (Drain), optimized for high-current, high-thermal-performance applications. The 4-terminal configuration separates signal and power return paths to eliminate source inductance impact on switching dynamics.

Pin/Terminal	Circuit Role	Design Meaning
1 (TAB)	Drain	High-current main drain connection; electrically tied to exposed metal tab for direct heatsink mounting and lowest R_thJC.
2	Power Source	Carries full load current return path; used for power loop closure and thermal conduction from source metallization.
3	Driver Source	Kelvin sense connection for gate driver reference; eliminates voltage drop error in gate loop during fast switching.
4	Gate	Control input terminal; accepts ±10 V to +18 V gate drive; low C_iss (3540 pF) eases driver design.

Key Features

Feature	Design Value
Very fast intrinsic body diode	11.16 ns t_rr, 276 nC Q_rr - Enables zero-voltage switching (ZVS) in resonant topologies without external diodes.
Extremely low gate charge	150 nC Q_g, 28 nC Q_gs, 63 nC Q_gd - Reduces gate driver power loss and allows use of cost-effective 2-A peak drivers.
Source sensing pin	Dedicated pin 3 (Driver Source) - Eliminates source inductance-induced gate oscillation and improves turn-off consistency.
High T_J capability	200 °C rated junction temperature - Permits smaller heatsinks and higher power density in space-constrained enclosures.
Low C_oss & C_rss	176 pF C_oss, 28 pF C_rss at 800 V - Improves hard-switching efficiency and reduces capacitive turn-on loss.

Applications

Industrial Motor Drives

Solar Inverters

Use Scenario: Three-phase inverter stage in 15–30 kW servo and pump drives operating at 10–20 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT/SiC hybrid or full-SiC inverter leg.

Use Value: 200 °C T_J rating enables sustained 91 A output without derating; low Q_gd/Q_g ratio ensures clean turn-off under high dV/dt.

Use Scenario: DC-AC stage of string inverters handling 1000 V DC input with transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge or NPC configuration for grid synchronization.

Use Value: 1200 V V_DS supports 1000 V PV strings with margin; fast body diode eliminates need for anti-parallel Si diodes.

Server PSU

EV Onboard Charger

Use Scenario: Primary-side switch in 3–6 kW telecom/server LLC resonant converters with >100 kHz operation.

IC Role / Device Role / Timing Role: Main power switch in half-bridge LLC primary, requiring precise ZVS timing and low E_off.

Use Value: 226 µJ E_off at 50 A/800 V and near-zero temperature dependence ensure consistent ZVS across ambient range.

Use Scenario: Bidirectional DC-DC stage in 11 kW OBCs converting between 400 V and 800 V battery systems.

IC Role / Device Role / Timing Role: High-frequency synchronous rectifier and active switch in dual-active-bridge (DAB) topology.

Use Value: Symmetrical 2.7 V V_SD and 11.16 ns t_rr enable efficient reverse conduction during phase-shift modulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	1200 V, 65 mΩ typ., 52 A, TO-247-4L package; higher R_DS(on), lower current rating.	Limited to ≤6 kW converters; requires larger heatsink due to higher conduction loss.	Select when cost sensitivity outweighs power density needs and gate drive is limited to ±15 V.
IXFH70N120X2 (IXYS)	1200 V, 32 mΩ typ., 70 A, TO-247-4L; higher Q_g (185 nC), no dedicated driver source pin.	Less suitable for >150 kHz operation; lacks Kelvin source, increasing risk of gate oscillation at high dI/dt.	Choose only if legacy TO-247 footprint compatibility is mandatory and gate driver has ≥4 A peak capability.

Compared with C3M0065120K and IXFH70N120X2, SCTWA70N120G2V-4 offers superior current density (91 A vs ≤70 A), lowest gate charge among 1200 V SiC MOSFETs in HiP247-4, and unique driver-source sensing - making it optimal for high-frequency, high-reliability industrial and EV power stages where layout parasitics must be minimized.

Availability

SCTWA70N120G2V-4 is available at Aetrix Electronics and suitable for industrial motor control, solar inverters, and server power supply designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for high-reliability deployments.

Supply support for SCTWA70N120G2V-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing, R&D, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density systems in renewable energy, industrial automation, and electric mobility - emphasizing ruggedness, temperature stability, and system-level efficiency gains.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is -10 V to +22 V, but ST specifies recommended operating values of -5 V to +18 V. Operating beyond +18 V risks accelerated gate oxide degradation, while gate drive below -5 V may not fully enhance channel turn-off under high dV/dt. For robust noise immunity, a -5 V turn-off bias is strongly advised.

Does the HiP247-4 package require special PCB layout considerations?

Yes. Pin 2 (Power Source) and Pin 3 (Driver Source) must be routed separately: Pin 2 connects to the main power ground plane, while Pin 3 returns only to the gate driver IC ground. A dedicated low-inductance trace from Pin 3 to driver ground minimizes gate loop area and prevents false turn-on during high dI/dt transitions.

How does R_DS(on) change with temperature, and what is its impact on thermal design?

R_DS(on) increases ~2× from 25 °C to 200 °C (normalized curve shows ~2.0× at 200 °C), reaching 46 mΩ max at T_J = 200 °C. This positive TC simplifies current sharing in paralleled devices and avoids thermal runaway, but thermal design must account for worst-case conduction loss at elevated T_J.

Can this MOSFET replace silicon IGBTs directly in existing designs?

Not without circuit redesign. While voltage/current ratings overlap, SiC MOSFETs demand faster gate drivers (due to low Q_g), stricter layout (Kelvin source routing), and revised snubber and gate resistor values (RG = 3.3 Ω typical). Also, the body diode's fast recovery eliminates need for anti-parallel diodes - a key opportunity for BOM reduction.

SCTWA70N120G2V-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 91A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:: 4.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 3540 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 547W

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

SCTWA70N120G2V-4 FAQ

1.How can I place an order for SCTWA70N120G2V-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTWA70N120G2V-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTWA70N120G2V-4 reliable?

The price and inventory of SCTWA70N120G2V-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTWA70N120G2V-4 is usually 5 days.

3.What payment methods are accepted for SCTWA70N120G2V-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTWA70N120G2V-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTWA70N120G2V-4?

SCTWA70N120G2V-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTWA70N120G2V-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTWA70N120G2V-4?

For technical support, including SCTWA70N120G2V-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTWA70N120G2V-4 requirements.

6.How does Aetrix verify that SCTWA70N120G2V-4 is sourced from the original manufacturer or authorized distributors?

All SCTWA70N120G2V-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTWA70N120G2V-4 meets industry standards.

7.What is the process for return or replacement of SCTWA70N120G2V-4?

All SCTWA70N120G2V-4 units undergo pre-shipment inspection (PSI). If there is an issue with SCTWA70N120G2V-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTWA70N120G2V-4 part is unused and in its original packaging.

Return procedure for SCTWA70N120G2V-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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