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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTWA90N65G2V

Name: SCTWA90N65G2V
Brand: STMicroelectronics
SKU: SCTWA90N65G2V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTWA90N65G2V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCTWA90N65G2V.pdf

Description:: SILICON CARBIDE POWER MOSFET 650

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Product details

Overview

SCTWA90N65G2V from STMicroelectronics is a silicon carbide (SiC) Power MOSFET rated for 650 V drain-source voltage, 18 mΩ typical R_DS(on) at 18 V gate drive and 50 A, and 119 A continuous drain current at T_C = 25 °C. It features an ultra-fast intrinsic body diode (t_rr = 17 ns), low total gate charge (157 nC), and operation up to 200 °C junction temperature - enabling high-efficiency, high-frequency switching in demanding power conversion stages.

For engineers reviewing the SCTWA90N65G2V datasheet, SCTWA90N65G2V pinout, SCTWA90N65G2V application, or SCTWA90N65G2V equivalent, key selection criteria include its SiC-specific thermal stability (R_DS(on) variation <1.8× from −75 °C to 200 °C), near-temperature-invariant switching energy, and robust safe operating area (SOA) up to 200 °C with 220 A pulsed current capability.

Technical Context

This 650 V SiC MOSFET uses ST's second-generation trench-gate SiC technology to achieve low specific on-resistance (18 mΩ·mm²) and minimal capacitance coupling (C_iss = 3380 pF, C_rss = 49 pF). Its gate threshold voltage (1.9–3.2 V) and negative gate-source voltage rating (−10 V) support robust gate driving in hard-switched topologies.

The device integrates a monolithic SiC body diode with 2.5 V forward voltage at 30 A and 308 nC reverse recovery charge - eliminating need for external anti-parallel diodes in bridge configurations. Switching losses (E_on = 130 µJ, E_off = 210 µJ at 400 V/50 A) remain stable across −75 °C to 200 °C, enabling predictable thermal design in high-power DC-DC and renewable inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC bus systems with >50% voltage margin for transient overvoltage handling in solar string inverters and EV chargers.
R_DS(on) typ.	18 mΩ at V_GS = 18 V, I_D = 50 A - Enables <1.2 W conduction loss at 80 A, critical for high-current, low-voltage-drop output stages.
I_D cont.	119 A at T_C = 25 °C - Delivers high power density in compact heatsink designs when paired with low R_thJC = 0.31 °C/W package.
Q_g	157 nC - Reduces gate driver power demand and enables faster switching with standard 2.2 Ω gate resistors (t_d(on) = 26 ns, t_f = 16 ns).
t_rr	17 ns - Minimizes commutation losses and eliminates reverse recovery spikes in totem-pole PFC and resonant LLC converters.
T_J max	200 °C - Allows derating-free operation in sealed enclosures or high-ambient environments (e.g., outdoor EV charging stations).

Pinout & Package

Supplied in HiP247 long leads package - a thermally optimized variant of TO-247 with extended lead length for improved creepage/clearance and enhanced PCB-level thermal relief. Package outline complies with ECOPACK2 environmental standards.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain, Tab)	Main power output terminal / heat sink interface	Electrically connected to exposed metal tab; requires insulated mounting or direct heatsink contact with ≥1.5 kV isolation.
G (Gate)	Control input for channel modulation	Low-impedance gate (R_g = 1 Ω) supports fast turn-on/turn-off; rated for −10 V to +22 V; threshold centered at 3.2 V.
S (Source)	Reference node for gate drive and current sensing	Common return path for load current and gate loop; must be routed with low inductance to minimize switching oscillation.

Key Features

Feature	Design Value
Ultra-low Q_g/Q_gd ratio	157 nC total gate charge with only 42 nC Miller charge - reduces dv/dt-induced false turn-on risk in high-side configurations.
Temperature-stable R_DS(on)	Normalized resistance remains ≤1.15× from −75 °C to 200 °C - simplifies thermal modeling and eliminates dynamic derating in wide-temperature applications.
High SOA at elevated T_J	Supports 100 A @ 400 V for 100 µs at T_J = 200 °C - enables reliable short-circuit tolerance in UPS and industrial motor drives.
Integrated SiC body diode	2.5 V V_SD at 30 A and 17 ns t_rr - replaces discrete anti-parallel diodes in bidirectional switches and synchronous rectifiers.

Applications

Photovoltaic String Inverters

EV DC Fast Charging Modules

Use Scenario: High-efficiency MPPT stage and DC-AC H-bridge switching in 1000 V-class solar inverters.

IC Role / Device Role / Timing Role: Primary switching element in interleaved boost and three-phase inverter legs operating at 50–100 kHz.

Use Value: 200 °C T_J rating allows full 119 A current capability without derating in rooftop enclosures reaching 85 °C ambient.

Use Scenario: Primary-side switching in 15–30 kW modular AC/DC converter units for CCS/GB/T charging stations.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on.

Use Value: Low C_oss (294 pF) and stable E_off (200 µJ at 200 °C) enable consistent soft-switching performance across ambient temperature range.

High-Frequency Isolated DC-DC Converters

Industrial Motor Drives (Traction Class)

Use Scenario: 1 MHz+ resonant LLC primary switches in server PSU and telecom rectifier modules.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) active clamp switch with fast body diode conduction during dead-time.

Use Value: 17 ns t_rr and 308 nC Q_rr minimize dead-time loss and prevent shoot-through in high-frequency half-bridge operation.

Use Scenario: Inverter leg switching in 75–150 kW permanent magnet traction drives for rail and heavy-duty EVs.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch in dual inverter configurations with redundant gate drive.

Use Value: 220 A pulsed current rating and 0.31 °C/W R_thJC support peak torque delivery while maintaining T_J < 175 °C under overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	Same 650 V/65 mΩ rating but higher R_DS(on) (65 mΩ vs 18 mΩ); lower I_D (65 A vs 119 A); identical T_J = 200 °C.	Better suited for medium-power 3–5 kW converters where conduction loss is less dominant than switching loss.	Select when system prioritizes cost-per-watt over peak current density and board space is constrained.
Infineon IMW65R023M1H	650 V/23 mΩ; slightly higher R_DS(on); 105 A I_D; includes integrated Kelvin source for precise gate control.	Preferred in high-precision servo drives requiring accurate current sensing and minimized gate loop inductance.	Choose when gate driver layout complexity demands Kelvin source routing and system tolerates 29% higher conduction loss.

Compared with C3M0065065K and IMW65R023M1H, SCTWA90N65G2V delivers the highest current density (119 A) and lowest R_DS(on) (18 mΩ) in the 650 V SiC MOSFET class - making it optimal for space-constrained, high-power-density applications where thermal headroom and conduction efficiency are critical.

Availability

SCTWA90N65G2V is available at Aetrix Electronics and suitable for photovoltaic string inverters, EV DC fast charging modules, and high-frequency isolated DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SCTWA90N65G2V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing, R&D, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's STPOWER SiC MOSFET product line - engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, electric mobility, and industrial automation systems.

FAQ

What gate drive voltage is recommended for optimal R_DS(on) and reliability?

ST specifies V_GS = 18 V for minimum R_DS(on) (18 mΩ) and recommends operation between −5 V and +18 V. A gate drive of −5 V/18 V ensures fast, low-loss switching while maintaining >2 V noise margin above the maximum V_GS(th) of 3.2 V - preventing unintended turn-on during high dv/dt events.

Can SCTWA90N65G2V replace silicon IGBTs in existing 650 V inverter designs?

Yes - with gate drive and layout adaptation. Its lower switching losses (E_on + E_off ≈ 340 µJ vs ~1000 µJ for comparable IGBTs), zero tail current, and 200 °C T_J allow direct substitution in hard-switched topologies. However, gate resistor values must be reduced (to ~2.2 Ω) and snubber networks re-optimized due to faster edge rates.

Is the HiP247 long leads package compatible with standard TO-247 heatsinks?

Yes - mechanical dimensions (D = 21.0 mm, E = 15.8 mm) match industry-standard TO-247 footprints. The "long leads" refer to extended lead length (L = 19.92 mm) for improved creepage distance; no adapter or custom mounting hardware is required for standard clip- or screw-type heatsinks.

Does the intrinsic SiC body diode require external anti-parallel diode protection?

No - the monolithic SiC body diode is fully rated for bidirectional conduction and reverse recovery. With 30 A forward current capability, 2.5 V V_SD, and 17 ns t_rr, it performs reliably in synchronous rectification and totem-pole PFC without supplemental diodes - reducing bill-of-materials and layout complexity.

SCTWA90N65G2V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 119A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 157 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 3380 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 565W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

SCTWA90N65G2V FAQ

1.How can I place an order for SCTWA90N65G2V through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTWA90N65G2V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTWA90N65G2V reliable?

The price and inventory of SCTWA90N65G2V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTWA90N65G2V is usually 5 days.

3.What payment methods are accepted for SCTWA90N65G2V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTWA90N65G2V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTWA90N65G2V?

SCTWA90N65G2V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTWA90N65G2V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTWA90N65G2V?

For technical support, including SCTWA90N65G2V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTWA90N65G2V requirements.

6.How does Aetrix verify that SCTWA90N65G2V is sourced from the original manufacturer or authorized distributors?

All SCTWA90N65G2V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTWA90N65G2V meets industry standards.

7.What is the process for return or replacement of SCTWA90N65G2V?

All SCTWA90N65G2V units undergo pre-shipment inspection (PSI). If there is an issue with SCTWA90N65G2V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTWA90N65G2V part is unused and in its original packaging.

Return procedure for SCTWA90N65G2V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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